摘要:
To provide a method for reading out symbol information and a device for reading out symbol information which are able to prevent a decline in decoding reliability by reducing noise caused by a quantized error, localized contaminations or the like. The method for reading out symbol information may comprise a process in which the image data, obtained by imaging the symbol information such as bar codes and the like, are converted to corrected image data having zero angle of inclination; a smoothing process in which the corrected image data are smoothed; and a column specifying process in which breakpoints of said symbol information column are specified by computing the total sum in the row direction on the smoothed corrected image data.
摘要:
A damping intermediate pillar, which can exhibit a sufficient resistance against the horizontal force of a strong earthquake by reinforcing the joins between the damping intermediate pillar and the upper and lower beams, is disclosed. A damping intermediate pillar 14, used for a building or a structure configured of pillars 1 and beams 3, is divided into upper and lower damping intermediate pillar portions 14a, 14b of H shape steel, and includes a plurality of inner steel plates 7b fixed on the damping intermediate pillar portion 14b and a plurality of outer steel plates 7a fixed on the other damping intermediate pillar portion 14a. The inner and outer steel plates are arranged alternately in a single or a plurality of layers, between which a viscoelastic member 15 is held to make up a viscoelastic damper 17. The coupling end surfaces of the intermediate pillar portions 14a, 14b directed vertically are fixed on the upper and lower floor beams 3a, 3b. Further, one or both sides of each of the damping intermediate pillar portions 14a, 14b (i.e. the coupling members 13a, 13b) and the upper and lower floor beams 3a, 3b are coupled to each other by knee braces 19.
摘要:
A nonvolatile semiconductor memory device comprises memory cell array constituted of a plurality of memory blocks which electrically rewritable memory cells are arranged, before erasing data of all of said memory cells in the selected memory block in a plurality of said memory blocks, preprogram is performed to shift all threshold voltages of all of said memory cells in said selected memory blocks to positive.
摘要:
The time required for the program verify and erase verify operations can be shortened. The change of threshold values of memory cells can be suppressed even if the write and erase operations are executed repetitively. After the program and erase operations, whether the operations were properly executed can be judged simultaneously for all bit lines basing upon a change, after the pre-charge, of the potential at each bit line, without changing the column address. In the data rewrite operation, the rewrite operation is not effected for a memory cell with the data once properly written, by changing the data in the data register.
摘要:
A supporting apparatus includes a connector, a first hook portion and a second hook portion. The connector is connected to a signal terminal provided at a bottom portion of a portable computer that is chosen from a plurality of electronic devices having different sizes which are dimensions measured from the bottom portions to outer peripheral edges of the portable computes. The first hook portion is provided with respect to the connector in a position corresponding to that of the outer peripheral edge of one of the portable computers. The second hook portion is provided with respect to the connector in a position corresponding to the outer peripheral edge of another of the portable computers.
摘要:
Data read from memory cells of one page in a memory cell array that corresponds to a page address of a copy source is sensed and latched by a sense/latch circuit. The sense/latch circuit has a plurality of latch circuits, and the plurality of latch circuits is specified according to the column address. The latch circuit specified in accordance with the column address is supplied with the data to be rewritten. The latch circuit specified in accordance with its address latches the data to be rewritten, whereby rewriting of the data is performed. The data of one page after rewritten is written into the page in the memory cell array that corresponds to the page address of a copy destination.
摘要:
A non-volatile semiconductor device has a memory cell array having electrically erasable programmable non-volatile memory cells, reprogramming and retrieval circuits that temporarily store data to be programmed in the memory cell array and sense data retrieved from the memory cell array. Each reprogramming and retrieval circuit has a first latch and a second latch that are selectively connected to the memory cell array and transfer data each other. A controller controls the reprogramming and retrieval circuits on data-reprogramming operation to and data-retrieval operation from the memory cell array. Each reprogramming and retrieval circuit has a multilevel logical operation mode and a caching operation mode. In the multilevel logical operation mode, re-programming and retrieval of upper and lower bits of two-bit four-level data is performed using the first and the second latches in storing the two-bit four-level data in one of the memory cells in a predetermined threshold level range. In the caching operation mode, data transfer between one of the memory cells selected in accordance with a first address and the first latch is performed while data transfer is performed between the second latch and input/output terminals in accordance with a second address with respect to one-bit two-level data to be stored in one of the memory cells.
摘要:
According to one embodiment of the invention, an electronic device, such as a tablet PC for example, is designed with a housing and a cover configured for attachment to the housing. The housing includes a front panel and a back panel having a base unit with a recess to receive a stylus pen to operate as a leg to maintain the housing in an upright position. Alternatively, the housing may include a control button to receive a stylus pen so that the combination operates as an input device similar to a joystick.
摘要:
A semiconductor integrated circuit device includes: a circuit node to be set at a certain operating voltage; and a voltage stabilizing capacitor connected to the circuit node, wherein the voltage stabilizing capacitor is formed of at least two MOS capacitors coupled in parallel with each other, which show different capacitance changes from each other in accordance with an applied voltage change.
摘要:
A displacement sensor for sensing the relative position of an object to be detcted is provided. The displacement sensor includes a core body having a core center portion and core end portions that are continuously formed on both sides of the core center portion. Magnetizing coils and detecting coils are wound around the core body such that they are lined on an axis of the core body. One of the magnetizing coils and detecting coils is placed at the core center portion while the other ones of the magnetizing coils and detctin coils are placed at the core end portions in the axial direction. The width of the core end portions in the direction perpendicular to the axial direction of the core body is substantially the same and is smaller than the width of the core center portion.