公开(公告)号：US08514364B2

公开(公告)日：2013-08-20

申请号：US13003268

申请日：2009-05-21

申请人： Kazuyuki Mikubo ,  Takeya Hashiguchi ,  Hitoshi Sakamoto

发明人： Kazuyuki Mikubo ,  Takeya Hashiguchi ,  Hitoshi Sakamoto

IPC分类号： G02F1/1333 ,  G02F1/13357

CPC分类号： H05K7/20963 ,  G02F1/133308 ,  G02F1/133385 ,  G02F1/133604 ,  G02F2001/133311 ,  G02F2001/133317 ,  G02F2001/133328 ,  G02F2001/133628 ,  G02F2201/36 ,  G02F2201/46 ,  G02F2201/50 ,  G02F2203/60 ,  G06F1/1601 ,  G06F1/20 ,  H05K7/20972

摘要： Provided is a highly reliable liquid crystal display device that prevents the penetration of a flying dust and dirt in the outside air. A liquid crystal display device (1) having a display unit housing case (2) configured to house a light source unit and a display unit, and an electronic component housing case (3) configured to house an electronic component. The liquid crystal display device (1) is tightly closed and externally disposed with heat radiation fins (6a and 6b).

摘要翻译： 提供了一种高度可靠的液晶显示装置，其防止飞溅的灰尘和污物在外部空气中的穿透。 一种具有容纳光源单元和显示单元的显示单元外壳（2）的液晶显示装置（1），以及容纳电子部件的电子部件收纳壳体（3）。 液晶显示装置（1）紧密地封闭并且外部设置有散热片（6a和6b）。

公开(公告)号：US20110192574A1

公开(公告)日：2011-08-11

申请号：US13062258

申请日：2009-10-07

申请人： Minoru Yoshikawa ,  Hitoshi Sakamoto ,  Takeya Hashiguchi

发明人： Minoru Yoshikawa ,  Hitoshi Sakamoto ,  Takeya Hashiguchi

IPC分类号： F28D15/00

CPC分类号： F28D15/0266 ,  F28F9/026 ,  H01L23/427 ,  H01L2924/0002 ,  H01L2924/00

摘要： A maintenance-free cooling structure is provided which, by removing bubbles produced on a boiling surface utilizing an action other than buoyancy, heat change (heat transfer) is effectively brought about on the boiling surface, thus enabling efficient cooling and its miniaturization and low power consumption. The cooling structure has an evaporation chamber 11 connected through a vapor pipe and a liquid return pipe to a condensation chamber to allow a phase change to occur from a vapor phase coolant V to a liquid phase coolant L. In the evaporation chamber, as a result of contact of the liquid phase coolant L with the boiling surface of a base plate 21 and/or with plate-shaped fins, the phase change occurs from liquid to vapor. The evaporation chamber has an aperture operating as a vapor port 25 for the vapor pipe which is formed in a neighboring position along an inner circumferential surface 23a of a cylindrical plate 23 in a ceiling surface 22a and an aperture operating as a liquid return port for the liquid return pipe which is formed in a position neighboring to an end edge along the boiling surface on an inner circumferential surface on a side opposite to the vapor port 25, so that the flow-in direction of the liquid phase coolant is in parallel to the boiling surface.

摘要翻译： 提供一种免维护的冷却结构，其通过除了浮力之外的作用除去在沸腾表面产生的气泡，在沸腾表面上有效地实现了热变化（传热），从而能够有效地冷却其小型化和低功率 消费。 冷却结构具有通过蒸汽管和液体返回管连接到冷凝室的蒸发室11，以允许从气相冷却剂V发生相变到液相冷却剂L.在蒸发室中，结果 液相冷却剂L与基板21的沸腾表面和/或板状翅片的接触，相变由液体发生。 蒸发室具有作为蒸汽管25的蒸气口的孔，该孔形成在沿天花板表面22a的圆柱形板23的内圆周表面23a的相邻位置和作为液体返回端口的孔中 液体返回管，其形成在与蒸气口25相反的一侧的内周面上沿着沸腾面的端部边缘的位置，使得液相冷却剂的流入方向平行于 沸腾的表面。

公开(公告)号：US07977243B2

公开(公告)日：2011-07-12

申请号：US12693589

申请日：2010-01-26

申请人： Hitoshi Sakamoto ,  Naoki Yahata ,  Ryuichi Matsuda ,  Yoshiyuki Ooba ,  Toshihiko Nishimori

发明人： Hitoshi Sakamoto ,  Naoki Yahata ,  Ryuichi Matsuda ,  Yoshiyuki Ooba ,  Toshihiko Nishimori

IPC分类号： H01L21/311

CPC分类号： H01L21/7685 ,  C23C8/36 ,  C23C16/14 ,  C23C16/34 ,  C23C16/40 ,  C23C16/4488 ,  C23C16/452 ,  C23C16/507 ,  C23C16/56 ,  C23F4/00 ,  H01L21/28556 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76856 ,  H01L21/76862 ,  H01L21/76876 ,  H01L21/76888 ,  H01L2221/1078

摘要： A Cl2 gas plasma is generated at a site within a chamber between a substrate and a metal member. The metal member is etched with the Cl2 gas plasma to form a precursor. A nitrogen gas is excited in a manner isolated from the chamber accommodating the substrate. A metal nitride is formed upon reaction between excited nitrogen and the precursor, and formed as a film on the substrate. After film formation of the metal nitride, a metal component of the precursor is formed as a film on the metal nitride on the substrate. In this manner, a barrier metal film with excellent burial properties and a very small thickness is produced at a high speed, with diffusion of metal being suppressed and adhesion to the metal being improved.

摘要翻译： 在衬底和金属构件之间的室内的位置处产生Cl 2气体等离子体。 用Cl 2气体等离子体蚀刻金属构件以形成前体。 以与容纳基板的室隔离的方式激发氮气。 在被激发的氮和前体之间反应时形成金属氮化物，并在基板上形成膜。 在金属氮化物成膜后，在基板上的金属氮化物上形成前体的金属成分作为膜。 以这种方式，以高速度产生具有优异的埋藏性能和非常小的厚度的阻挡金属膜，其中金属的扩散被抑制并且对金属的粘附性得到改善。

公开(公告)号：US20110114384A1

公开(公告)日：2011-05-19

申请号：US13054283

申请日：2009-04-10

申请人： Hitoshi Sakamoto ,  Kazuyuki Mikubo ,  Takeya Hashiguchi

发明人： Hitoshi Sakamoto ,  Kazuyuki Mikubo ,  Takeya Hashiguchi

IPC分类号： H05K7/20

CPC分类号： H01L23/467 ,  G02F1/133385 ,  G02F2201/36 ,  H01L2924/0002 ,  H05K7/20954 ,  H05K7/20972 ,  H01L2924/00

摘要： Resistivity to dust and cooling performance are improved by a simple structure. Electronic apparatus (image display apparatus) 1 includes: housing 31 that forms sealed inner space 33; circuit unit 39 that is provided in inner space 33; first partition plate 34 that is provided in inner space 33 and that has upper/lower partition portion 7, wherein upper/lower partition portion 7 at least partially extends in a lateral direction extending above at least a part of circuit unit 39 and that terminates in front of both lateral sides of housing 31; and first fan 5, 6 that is provided through upper/lower partition portion 7.

摘要翻译： 通过简单的结构提高了电阻灰尘和冷却性能。 电子设备（图像显示装置）1包括：形成密封的内部空间33的壳体31; 电路单元39设置在内部空间33中; 第一分隔板34设置在内部空间33中并且具有上部/下部分隔部7，其中上部/下部分隔部7至少部分地沿着在电路单元39的至少一部分上方延伸的横向延伸并且终止于 外壳31的两侧的前面; 以及通过上/下分隔部7设置的第一风扇5,6。

公开(公告)号：US20100062602A1

公开(公告)日：2010-03-11

申请号：US11919341

申请日：2006-04-28

申请人： Hitoshi Sakamoto ,  Chikako Kobayashi

发明人： Hitoshi Sakamoto ,  Chikako Kobayashi

IPC分类号： H01L21/311 ,  H01L21/306

CPC分类号： H01L21/67069 ,  C23C16/14 ,  C23C16/4488 ,  C23C16/56 ,  C23F4/00 ,  H01J37/321 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/32136

摘要： To provide an etching method employing a novel CVD system and an etching apparatus applicable to the method.In the etching method, performed are an adsorption step of employing halogen radicals generated from a halogen through formation of a plasma thereof, and a precursor 24 formed from the halogen and a noble metal component generated through etching of a noble metal member 11 by the halogen radicals, wherein crystal nuclei of the precursor 24 are caused to be adsorbed on a substrate 3; and an etching step of anisotropically etching, in a thickness direction by the halogen radicals, a portion of the substrate 3 on which the crystal nuclei have been adsorbed.

摘要翻译： 提供采用新型CVD系统的蚀刻方法和适用于该方法的蚀刻装置。 在蚀刻方法中，通过形成等离子体，由卤素生成的卤素自由基和由卤素形成的前体24和通过卤素蚀刻贵金属构件11而产生的贵金属成分的吸附步骤 自由基，其中使前体24的晶核被吸附在基板3上; 以及蚀刻步骤，在厚度方向上通过卤素自由基蚀刻沉积有晶体核的基板3的一部分。

公开(公告)号：US20100025019A1

公开(公告)日：2010-02-04

申请号：US12518357

申请日：2007-12-03

申请人： Hitoshi Sakamoto ,  Kazuyuki Mikubo ,  Sakae Kitajo

发明人： Hitoshi Sakamoto ,  Kazuyuki Mikubo ,  Sakae Kitajo

IPC分类号： H01L23/34 ,  F28D15/00 ,  F28F13/00 ,  B21D53/02

CPC分类号： H01L23/427 ,  H01L2924/0002 ,  Y10T29/4935 ,  H01L2924/00

摘要： Behavior of a vapor bubble that emerges should be controlled to improve operational stability and reliability of a phase shift heat exchanger having a microchannel. The heat exchanger has a dual layer structure and includes a material that is elastically deformed according to pressure difference between the layers. The layers are connected, and at the connection interface a resistance unit that exerts a predetermined resistance against a coolant flowing from the coolant supplying layer toward the microchannel layer is provided, to maintain internal pressure of the coolant supplying layer higher than that of the microchannel, under a normal operation. Once a vapor bubble emerges, the relationship in strength of the internal pressure is turned over, and the elastic material is lifted so that the vapor bubble is dividedly distributed over a plurality of microchannels. Alternatively, the internal pressure of the coolant supplying layer may be maintained lower than that of the microchannel, so that once a vapor bubble emerges the vapor bubble is drawn to the lower pressure side.

摘要翻译： 应该控制出现气泡的行为，以提高具有微通道的相移式热交换器的操作稳定性和可靠性。 热交换器具有双层结构，并且包括根据层之间的压力差弹性变形的材料。 这些层被连接，并且在连接接口处设置有电阻单元，其对从冷却剂供应层朝向微通道层流动的冷却剂施加预定电阻，以保持冷却剂供应层的内部压力高于微通道的内部压力， 正常运作。 一旦蒸汽气泡出现，内部压力的强度关系就会翻转，并且弹性材料被提升，使得气泡分散在多个微通道上。 或者，冷却剂供给层的内部压力可以保持低于微通道的内部压力，使得一旦蒸汽气泡出现，则蒸汽气泡被吸入低压侧。

公开(公告)号：US20100012299A1

公开(公告)日：2010-01-21

申请号：US12523579

申请日：2008-01-15

申请人： Hitoshi Sakamoto ,  Kazuyuki Mikubo ,  Sakae Kitajo

发明人： Hitoshi Sakamoto ,  Kazuyuki Mikubo ,  Sakae Kitajo

IPC分类号： F28F13/02 ,  F28D15/02 ,  F28F7/00

CPC分类号： H01L23/427 ,  F28D15/046 ,  F28F13/18 ,  H01L2924/0002 ,  H01L2924/3011 ,  H01L2924/00

摘要： According to the present invention, there is provided a heat exchanger unit having, over a base, a surface-modified portion composed of a metal, the surface-modified portion being brought into contact with a flow path provided for a liquid refrigerant, wherein the liquid refrigerant is a liquid having a surface tension smaller than that of water, and the surface-modified portion has a porous structure, in which a plurality of recesses are provided on the flow path side thereof, each recess has an introduction path having a cross-section area gradually reduced from the inlet of the recess, and a cavity communicated with the introduction path while placing an inflection portion in between, and the shortest distance between the inflection portion and the flow path is larger than the shortest distance between the cavity and the flow path.

摘要翻译： 根据本发明，提供了一种热交换器单元，其在基座上具有由金属构成的表面改性部分，所述表面改性部分与设置用于​​液体制冷剂的流路接触，其中， 液体制冷剂是具有小于水的表面张力的液体，并且表面改性部分具有多孔结构，其中在其流动路径侧上设置有多个凹部，每个凹部具有十字形的引入路径 切口区域从凹部的入口逐渐减小，并且与入口路径连通，同时在其间设置拐点部分，并且拐点部分和流动路径之间的最短距离大于腔体和 流路。

公开(公告)号：US07314651B2

公开(公告)日：2008-01-01

申请号：US10472822

申请日：2002-03-28

申请人： Hitoshi Sakamoto ,  Noriaki Ueda ,  Takashi Sugino

发明人： Hitoshi Sakamoto ,  Noriaki Ueda ,  Takashi Sugino

IPC分类号： H05H1/24 ,  C23C16/00

CPC分类号： H01L21/02274 ,  C04B35/583 ,  C04B2235/386 ,  C04B2235/422 ,  C23C16/342 ,  C23C16/36 ,  H01L21/02112 ,  H01L21/318 ,  H01L21/76829

摘要： A plasma 10 is generated within a film formation chamber 2, and mainly a nitrogen gas 11 is excited within the film formation chamber 2. Then, the excited nitrogen gas 11 is mixed with a diborane gas 13 diluted with a hydrogen gas to react them, thereby forming a boron nitride film 15 on a substrate 4. At the initial stage of film formation, the nitrogen gas 11 is supplied in excess to suppress the occurrence of an amorphous phase on the interface. As a result, the boron nitride film 15 improved in moisture absorption resistance on the interface with the substrate and maintaining low dielectric constant properties is formed.

摘要翻译： 在成膜室2内产生等离子体10，主要在成膜室2内激发氮气11。 然后，将激发的氮气11与用氢气稀释的乙硼烷气体13进行反应，从而在基板4上形成氮化硼膜15。 在成膜的初始阶段，过量地供给氮气11，以抑制界面处的非晶相的发生。 结果，氮化硼膜15与衬底的界面上的耐吸湿性提高，并且保持低的介电常数特性。

公开(公告)号：US20070163503A1

公开(公告)日：2007-07-19

申请号：US11635600

申请日：2006-12-08

申请人： Keeyoung Jun ,  Hitoshi Sakamoto ,  Suguru Noda

发明人： Keeyoung Jun ,  Hitoshi Sakamoto ,  Suguru Noda

IPC分类号： H01L21/306 ,  C23C16/00

CPC分类号： C23C16/4488 ,  C23C16/14

摘要： A thin film preparation apparatus performs film formation by supplying a precursor CuCl with increased supply accuracy and Cl* from a material supply apparatus outside a chamber into the chamber with the use of a member to be etched, which has been temperature-controlled independently, and depositing a Cu component of the CuCl on a substrate, without complicating temperature control (simply by heating control by a heater), and without the influence of radiation from a plasma.

摘要翻译： 薄膜制备装置通过使用被独立地进行温度控制的被蚀刻部件，将具有增加的供给精度的前体CuCl和Cl *从室内的材料供给装置供应到室中来进行成膜，以及 将CuCl的Cu成分沉积在基板上，而不会使温度控制复杂化（简单地通过加热器的加热控制），并且不受来自等离子体的辐射的影响。

公开(公告)号：US20070117363A1

公开(公告)日：2007-05-24

申请号：US11638522

申请日：2006-12-14

申请人： Hitoshi Sakamoto ,  Naoki Yahata ,  Ryuichi Matsuda ,  Yoshiyuki Ooba ,  Toshihiko Nishimori

发明人： Hitoshi Sakamoto ,  Naoki Yahata ,  Ryuichi Matsuda ,  Yoshiyuki Ooba ,  Toshihiko Nishimori

IPC分类号： H01L21/3205 ,  C23C16/00 ,  H01L21/4763

CPC分类号： H01L21/7685 ,  C23C8/36 ,  C23C16/14 ,  C23C16/34 ,  C23C16/40 ,  C23C16/4488 ,  C23C16/452 ,  C23C16/507 ,  C23C16/56 ,  C23F4/00 ,  H01L21/28556 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76856 ,  H01L21/76862 ,  H01L21/76876 ,  H01L21/76888 ,  H01L2221/1078

摘要： A Cl2 gas plasma is generated at a site within a chamber between a substrate and a metal member. The metal member is etched with the Cl2 gas plasma to form a precursor. A nitrogen gas is excited in a manner isolated from the chamber accommodating the substrate. A metal nitride is formed upon reaction between excited nitrogen and the precursor, and formed as a film on the substrate. After film formation of the metal nitride, a metal component of the precursor is formed as a film on the metal nitride on the substrate. In this manner, a barrier metal film with excellent burial properties and a very small thickness is produced at a high speed, with diffusion of metal being suppressed and adhesion to the metal being improved.