公开(公告)号：US07432178B2

公开(公告)日：2008-10-07

申请号：US11254769

申请日：2005-10-21

申请人： Angela T. Hui ,  Jean Yang ,  Yu Sun ,  Mark T. Ramsbey ,  Weidong Qian

发明人： Angela T. Hui ,  Jean Yang ,  Yu Sun ,  Mark T. Ramsbey ,  Weidong Qian

IPC分类号： H01L21/04

CPC分类号： H01L27/11568 ,  H01L27/115

摘要： A method for performing a bit line implant is disclosed. The method includes forming a group of structures on an oxide-nitride-oxide stack of a semiconductor device. Each structure of the group of structures includes a polysilicon portion and a hard mask portion. A first structure of the group of structures is separated from a second structure of the group of structures by less than 100 nanometers. The method further includes using the first structure and the second structure to isolate a portion of the semiconductor device for the bit line implant.

摘要翻译： 公开了一种用于执行位线植入的方法。 该方法包括在半导体器件的氧化物 - 氮化物 - 氧化物堆叠上形成一组结构。 该组结构的每个结构包括多晶硅部分和硬掩模部分。 该组结构的第一结构与该组结构的第二结构分开小于100纳米。 该方法还包括使用第一结构和第二结构来隔离位线植入物的半导体器件的一部分。

公开(公告)号：US07382570B1

公开(公告)日：2008-06-03

申请号：US11450093

申请日：2006-06-09

申请人： Yunfeng Li ,  Yu Sun

发明人： Yunfeng Li ,  Yu Sun

IPC分类号： G11B5/596

CPC分类号： G11B5/5547

摘要： Methods of controlling seeking of a transducer that is adjacent to a rotatable disk in a disk drive are disclosed. The methods may include accelerating the transducer radially across the rotatable disk from an initial track on the rotatable disk toward a destination track on the rotatable disk, estimating a deceleration switching position/velocity point, estimating a maximum deceleration position/velocity point following the deceleration switching position/velocity point, and estimating a deceleration current required to decelerate the transducer from a non-zero velocity at the maximum deceleration position/velocity point to zero velocity at the destination track. The estimated deceleration current is compared to a maximum available deceleration current, and responsive to a determination that the current required to decelerate the transducer from the maximum deceleration point to the destination track exceeds the maximum available deceleration current, the estimated deceleration switching point is adjusted. Related disk drive apparatus are also disclosed.

摘要翻译： 公开了在磁盘驱动器中控制与可旋转盘相邻的换能器的寻找方法。 这些方法可以包括将转换器从可旋转磁盘上的初始轨道径向地加速到可旋转磁盘上的目标轨道，估计减速切换位置/速度点，估计减速切换之后的最大减速位置/速度点 位置/速度点，并且估计将换能器从最大减速位置/速度点处的非零速度减速到目的地轨道处的零速度所需的减速电流。 将估计的减速电流与最大可用减速电流进行比较，并且响应于确定将换能器从最大减速点减速到目的地轨道所需的电流超过最大可用减速电流，则调整估计减速度切换点。 还公开了相关的磁盘驱动装置。

公开(公告)号：US07375911B1

公开(公告)日：2008-05-20

申请号：US10996543

申请日：2004-11-24

申请人： Yunfeng Li ,  Wei Guo ,  Lin Guo ,  Yu Sun

发明人： Yunfeng Li ,  Wei Guo ,  Lin Guo ,  Yu Sun

IPC分类号： G11B21/02 ,  G11B5/596 ,  G11B17/00 ,  G11B33/14 ,  G11B21/24

CPC分类号： G11B19/042 ,  G11B5/4826 ,  G11B5/483 ,  G11B5/5552 ,  G11B5/5582 ,  G11B5/596

摘要： A hard disk drive is disclosed comprising at least one disk rotatable about an axis, an actuator assembly moveable relative to the disk, a transducer positioned on the actuator assembly, an actuator signal line, a piezoelectric actuator element disposed on the actuator assembly and electrically interconnected to the actuator signal line, a processor, a sensor signal line and a piezoelectric sensor element for sensing a vibration. The piezoelectric sensor element is collocated with the piezoelectric actuator element and electrically interconnected to the processor by the sensor signal line. The piezoelectric actuator element is operable to move the at least one transducer relative to a surface of the disk. The piezoelectric sensor element is electrically isolated from the piezoelectric actuator element. A method for detecting a vibration in a hard disk drive actuator assembly is also disclosed.

摘要翻译： 公开了一种硬盘驱动器，其包括至少一个可围绕轴可旋转的盘，可相对于盘移动的致动器组件，位于致动器组件上的换能器，致动器信号线，设置在致动器组件上的电压互连 致动器信号线，用于感测振动的处理器，传感器信号线和压电传感器元件。 压电传感器元件与压电致动器元件并置，并通过传感器信号线电连接到处理器。 压电致动器元件可操作以相对于盘的表面移动至少一个换能器。 压电传感器元件与压电致动器元件电隔离。 还公开了一种用于检测硬盘驱动器致动器组件中的振动的方法。

公开(公告)号：US20080030889A1

公开(公告)日：2008-02-07

申请号：US11750820

申请日：2007-05-18

申请人： S. Smith ,  Stan Shepherd ,  Yu Sun ,  Yuan Chen ,  Lin Guo

发明人： S. Smith ,  Stan Shepherd ,  Yu Sun ,  Yuan Chen ,  Lin Guo

IPC分类号： G11B5/596

CPC分类号： G11B5/59633 ,  G11B5/59661 ,  G11B5/59666

摘要： In accordance with various embodiments, initial servo data are written to a storage medium as a series of radially overlapped spiral segments. Final servo data are thereafter written to the medium while concurrently servoing on said overlapped segments.

摘要翻译： 根据各种实施例，初始伺服数据作为一系列径向重叠的螺旋段被写入存储介质。 最后伺服数据此后被写入介质，同时在所述重叠段上进行伺服。

公开(公告)号：US07304818B2

公开(公告)日：2007-12-04

申请号：US11545184

申请日：2006-10-10

申请人： Xin H. Yang ,  S. Craig Smith ,  Lin Guo ,  Yu Sun ,  Brian Rigney ,  Stan Shepherd ,  Yuan Chen

发明人： Xin H. Yang ,  S. Craig Smith ,  Lin Guo ,  Yu Sun ,  Brian Rigney ,  Stan Shepherd ,  Yuan Chen

IPC分类号： G11B5/56 ,  G11B21/12

CPC分类号： G11B5/59633 ,  G11B5/59661 ,  G11B5/59666

摘要： An apparatus and associated method for preconditioning an elastomeric stop member to create a stabilized reference position for a moveable member by repetitively biasing the moveable member against the stop member and using the stabilized reference position to initiate a writing of servo data by the moveable member to a storage surface.

公开(公告)号：US07301193B2

公开(公告)日：2007-11-27

申请号：US10762445

申请日：2004-01-22

申请人： Shenqing Fang ,  Timothy Thurgate ,  Kuo-Tung Chang ,  Richard Fastow ,  Angela T. Hui ,  Kazuhiro Mizutani ,  Kelwin Ko ,  Hiroyuki Kinoshita ,  Yu Sun ,  Hiroyuki Ogawa

发明人： Shenqing Fang ,  Timothy Thurgate ,  Kuo-Tung Chang ,  Richard Fastow ,  Angela T. Hui ,  Kazuhiro Mizutani ,  Kelwin Ko ,  Hiroyuki Kinoshita ,  Yu Sun ,  Hiroyuki Ogawa

IPC分类号： H01L29/788

CPC分类号： H01L29/66825 ,  H01L21/28273 ,  H01L21/743 ,  H01L29/41766 ,  H01L29/66636

摘要： According to one exemplary embodiment, a floating gate memory cell comprises a stacked gate structure situated on a substrate and situated over a channel region in the substrate. The floating gate memory cell further comprises a recess formed in the substrate adjacent to the stacked gate structure, where the recess has a sidewall, a bottom, and a depth. According to this exemplary embodiment, the floating gate memory cell further comprises a source situated adjacent to the sidewall of the recess and under the stacked gate structure. The floating gate memory cell further comprises a Vss connection region situated under the bottom of the recess and under the source, where the Vss connection region is connected to the source. The Vss connection region being situated under the bottom of the recess causes the source to have a reduced lateral diffusion in the channel region.

摘要翻译： 根据一个示例性实施例，浮动栅极存储器单元包括位于衬底上并位于衬底中的沟道区域上方的堆叠栅极结构。 浮动栅极存储单元还包括形成在衬底中的与堆叠的栅极结构相邻的凹部，其中凹部具有侧壁，底部和深度。 根据该示例性实施例，浮动栅极存储单元还包括位于与凹部的侧壁相邻并位于堆叠栅极结构下方的源极。 浮动栅极存储单元还包括位于凹部底部下方和源极之下的Vss连接区域，其中Vss连接区域连接到源极。 位于凹部底部下方的Vss连接区使得源在通道区域中具有减小的横向扩散。

公开(公告)号：US07283321B1

公开(公告)日：2007-10-16

申请号：US11197572

申请日：2005-08-04

申请人： Yu Sun ,  Yunfeng Li ,  Lin Guo ,  Paul Yeagle

发明人： Yu Sun ,  Yunfeng Li ,  Lin Guo ,  Paul Yeagle

IPC分类号： G11B5/596

CPC分类号： G11B5/5552

摘要： A disk drive includes a disk, a head, a coarse actuator, a microactuator, and a servo controller. The microactuator positions the head relative to the disk. The coarse actuator positions the microactuator and the head relative to the disk. The servo controller controls the microactuator in accordance with a microactuator feedforward control signal that is provided by the servo controller based on a plurality of microactuator feedforward values. The servo controller tunes at least one microactuator feedforward value of the plurality of microactuator feedforward values. The servo controller scales the microactuator feedforward control signal in accordance with a microactuator feedforward gain, and the servo controller adjusts the microactuator feedforward gain based on a position error signal that is determined during a seek operation.

摘要翻译： 磁盘驱动器包括盘，头，粗致动器，微致动器和伺服控制器。 微型致动器将磁头相对于磁盘定位。 粗执行器将微致动器和头相对于盘定位。 伺服控制器根据由伺服控制器基于多个微致动器前馈值提供的微致动器前馈控制信号来控制微致动器。 伺服控制器调谐多个微致动器前馈值的至少一个微致动器前馈值。 伺服控制器根据微致动器前馈增益来缩放微致动器前馈控制信号，并且伺服控制器基于在寻道操作期间确定的位置误差信号来调节微致动器前馈增益。

公开(公告)号：US20070206317A1

公开(公告)日：2007-09-06

申请号：US11713531

申请日：2007-03-01

申请人： Yu Sun ,  Yanning Liu

发明人： Yu Sun ,  Yanning Liu

IPC分类号： G11B5/596

CPC分类号： G11B5/5547

摘要： Examples of the present invention relate to reduction in acoustic noise by tuning seek characteristics of a servo controller, depending on a radial position of a head relative to a disk. The servo controller can provide compensation for acoustic resonance modes.

摘要翻译： 本发明的示例涉及通过根据磁头相对于磁盘的径向位置来调整伺服控制器的寻道特性来降低声学噪声。 伺服控制器可以为声共振模式提供补偿。

公开(公告)号：US07226839B1

公开(公告)日：2007-06-05

申请号：US10861575

申请日：2004-06-04

申请人： King Wai Kelwin Ko ,  Hiroyuki Kinoshita ,  Hiroyuki Ogawa ,  Yu Sun

发明人： King Wai Kelwin Ko ,  Hiroyuki Kinoshita ,  Hiroyuki Ogawa ,  Yu Sun

IPC分类号： H01L21/8234

CPC分类号： H01L27/105 ,  H01L21/76819 ,  H01L21/76838 ,  H01L21/7684 ,  H01L27/115 ,  H01L27/11521 ,  H01L27/11526 ,  Y10S438/926

摘要： A method and system for improving the topography of a memory array is disclosed. In one embodiment, a dummy bitline is formed over a field oxide region at an interface between a memory array and interface circuitry. In addition, a poly-2 layer is applied above the dummy bitline on the field oxide region wherein the utilization of the field oxide region for placement of the dummy bitline provides a uniform surface between an actual bitline and the periphery of the memory array. Furthermore, a landing pad is formed at the end of the dummy bitline on the field oxide region, wherein the dummy bitline does not cause erroneous operation of the landing pad.

摘要翻译： 公开了一种用于改善存储器阵列的形貌的方法和系统。 在一个实施例中，在存储器阵列和接口电路之间的接口处的场氧化物区域上形成虚拟位线。 此外，在场氧化物区域上的虚拟位线之上施加多晶硅层2，其中用于放置虚拟位线的场氧化物区域的利用在实际位线和存储器阵列的外围之间提供均匀的表面。 此外，在场氧化物区域上的虚拟位线的末端形成着陆焊盘，其中虚拟位线不会引起着陆焊盘的错误操作。

公开(公告)号：US20070117303A1

公开(公告)日：2007-05-24

申请号：US11656438

申请日：2007-01-23

申请人： Hideki Komori ,  Hisayuki Shimada ,  Yu Sun ,  Hiroyuki Kinoshita

发明人： Hideki Komori ,  Hisayuki Shimada ,  Yu Sun ,  Hiroyuki Kinoshita

IPC分类号： H01L21/8238

CPC分类号： H01L27/11521 ,  H01L21/823425 ,  H01L21/823468 ,  H01L27/115 ,  H01L27/11568 ,  Y10S257/90

摘要： A drain (7) includes a lightly-doped shallow impurity region (7a) aligned with a control gate (5), and a heavily-doped deep impurity region (7b) aligned with a sidewall film (8) and doped with impurities at a concentration higher than that of the lightly-doped shallow impurity region (7a). The lightly-doped shallow impurity region (7a) leads to improvement of the short-channel effect and programming efficiency. A drain contact hole forming portion (70) is provided to the heavily-doped impurity region (7b) to reduce the contact resistance at the drain (7).

摘要翻译： 漏极（7）包括与控制栅极（5）对准的轻掺杂浅杂质区域（7a）和与侧壁膜（8）对准并掺杂杂质的重掺杂深杂质区域（7b） 其浓度高于轻掺杂浅杂质区（7a）的浓度。 轻掺杂的浅杂质区（7a）导致短沟道效应和编程效率的提高。 漏极接触孔形成部分（70）设置到重掺杂杂质区域（7b）以降低漏极（7）处的接触电阻。