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公开(公告)号:US20220187548A1
公开(公告)日:2022-06-16
申请号:US17122340
申请日:2020-12-15
Applicant: Intel Corporation
Inventor: Brandon C. MARIN , Divya PRATAP , Hiroki TANAKA , Nitin DESHPANDE , Omkar KARHADE , Robert Alan MAY , Sri Ranga Sai BOYAPATI , Srinivas V. PIETAMBARAM , Xiaoqian LI , Sai VADLAMANI , Jeremy ECTON
Abstract: Embodiments disclosed herein include optical systems with Faraday rotators in order to enhance efficiency. In an embodiment, a photonics package comprises an interposer and a patch over the interposer. In an embodiment, the patch overhangs an edge of the interposer. In an embodiment, the photonics package further comprises a photonics die on the patch and a Faraday rotator passing through a thickness of the patch. In an embodiment, the Faraday rotator is below the photonics die.
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公开(公告)号:US20220155539A1
公开(公告)日:2022-05-19
申请号:US16953146
申请日:2020-11-19
Applicant: Intel Corporation
Inventor: Srinivas V. PIETAMBARAM , Brandon C. MARIN , Sameer PAITAL , Sai VADLAMANI , Rahul N. MANEPALLI , Xiaoqian LI , Suresh V. POTHUKUCHI , Sujit SHARAN , Arnab SARKAR , Omkar KARHADE , Nitin DESHPANDE , Divya PRATAP , Jeremy ECTON , Debendra MALLIK , Ravindranath V. MAHAJAN , Zhichao ZHANG , Kemal AYGÜN , Bai NIE , Kristof DARMAWIKARTA , James E. JAUSSI , Jason M. GAMBA , Bryan K. CASPER , Gang DUAN , Rajesh INTI , Mozhgan MANSURI , Susheel JADHAV , Kenneth BROWN , Ankar AGRAWAL , Priyanka DOBRIYAL
IPC: G02B6/42
Abstract: Embodiments disclosed herein include optical packages. In an embodiment, an optical package comprises a package substrate, and a photonics die coupled to the package substrate. In an embodiment, a compute die is coupled to the package substrate, where the photonics die is communicatively coupled to the compute die by a bridge in the package substrate. In an embodiment, the optical package further comprises an optical waveguide embedded in the package substrate. In an embodiment, a first end of the optical waveguide is below the photonics die, and a second end of the optical waveguide is substantially coplanar with an edge of the package substrate.
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公开(公告)号:US20220028788A1
公开(公告)日:2022-01-27
申请号:US17492476
申请日:2021-10-01
Applicant: Intel Corporation
Inventor: Srinivas V. PIETAMBARAM , Tarek IBRAHIM , Kristof DARMAWIKARTA , Rahul N. MANEPALLI , Debendra MALLIK , Robert L. SANKMAN
IPC: H01L23/538 , H01L23/48 , H01L23/498 , H01L23/00 , H01L25/065
Abstract: A glass substrate houses an embedded multi-die interconnect bridge that is part of a semiconductor device package. Through-glass vias communicate to a surface for mounting on a semiconductor package substrate.
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74.
公开(公告)号:US20210343653A1
公开(公告)日:2021-11-04
申请号:US17374886
申请日:2021-07-13
Applicant: Intel Corporation
Inventor: Srinivas V. PIETAMBARAM , Sri Ranga Sai BOYAPATI , Robert A. MAY , Kristof DARMAWIKARTA , Javier SOTO GONZALEZ , Kwangmo LIM
IPC: H01L23/538 , H01L23/00
Abstract: A foundation layer and methods of forming a conductive via are described. A die pad is formed over a die. A seed layer is deposited over the die pad and the foundation layer. A first photoresist layer is deposited over the seed layer, and the first layer is patterned to form a conductive line opening over the die pad. A conductive material is deposited into the conductive line opening to form a conductive line. A second photoresist layer is deposited over the first layer, and the second layer is patterned to form a via opening over the conductive line. The conductive material is deposited into the via opening to form the conductive via, where the conductive material only deposits on portions of exposed conductive line. The second and first layers are removed. Portions of exposed seed layer are recessed, and then a top surface of the conductive via is exposed.
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公开(公告)号:US20210035901A1
公开(公告)日:2021-02-04
申请号:US17075533
申请日:2020-10-20
Applicant: Intel Corporation
Inventor: Srinivas V. PIETAMBARAM , Jung Kyu HAN , Ali LEHAF , Steve CHO , Thomas HEATON , Hiroki TANAKA , Kristof DARMAWIKARTA , Robert Alan MAY , Sri Ranga Sai BOYAPATI
IPC: H01L23/498 , H01L23/538 , H01L25/18 , H01L21/48 , H01L23/00 , H01L25/00
Abstract: A package assembly includes a substrate and at least a first die having a first contact array and a second contact array. First and second via assemblies are respectively coupled with the first and second contact arrays. Each of the first and second via assemblies includes a base pad, a cap assembly, and a via therebetween. One or more of the cap assembly or the via includes an electromigration resistant material to isolate each of the base pad and the cap assembly. Each first cap assembly and via of the first via assemblies has a first assembly profile less than a second assembly profile of each second cap assembly and via of the second via assemblies. The first and second cap assemblies have a common applied thickness in an application configuration. The first and second cap assemblies have a thickness variation of ten microns or less in a reflowed configuration.
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公开(公告)号:US20200350251A1
公开(公告)日:2020-11-05
申请号:US16931690
申请日:2020-07-17
Applicant: Intel Corporation
Inventor: Srinivas V. PIETAMBARAM , Rahul N. MANEPALLI
IPC: H01L23/538 , H01L21/48 , H01L23/498 , H01L23/00 , H01L25/065
Abstract: Electrical interconnect bridge technology is disclosed. An electrical interconnect bridge can include a bridge substrate formed of a mold compound material. The electrical interconnect bridge can also include a plurality of routing layers within the bridge substrate, each routing layer having a plurality of fine line and space (FLS) traces. In addition, the electrical interconnect bridge can include a via extending through the substrate and electrically coupling at least one of the FLS traces in one of the routing layers to at least one of the FLS traces in another of the routing layers.
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77.
公开(公告)号:US20190279935A1
公开(公告)日:2019-09-12
申请号:US16349932
申请日:2016-12-29
Applicant: Intel Corporation
Inventor: David Allen UNRUH, JR. , Srinivas V. PIETAMBARAM , Rahul N. MANEPALLI
IPC: H01L23/532 , H01L23/522 , H01L25/065 , H05K1/09 , H05K1/18 , H01L23/00
Abstract: Semiconductor packages including package substrates having non-homogeneous dielectric layers, and methods of fabricating such semiconductor packages, are described. In an example, a semiconductor package substrate includes a dielectric layer having a resin-rich region, e.g., a resin-rich sublayer, and a filler-rich region, e.g., a filler-rich sublayer. The sublayers may contain respective mixtures of an organic resin material and an inorganic filler material. The filler-rich sublayer may have a higher density of the inorganic filler material than the resin-rich sublayer. A density of the inorganic filler material may be lesser near a top surface of 0 the dielectric layer in which an electrical interconnect is embedded. The electrical interconnect may have a greater adhesion affinity to the organic resin material than the inorganic filler material, and thus, the electrical interconnect may readily attach to the functionally-graded dielectric layer.
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78.
公开(公告)号:US20190189563A1
公开(公告)日:2019-06-20
申请号:US16326679
申请日:2016-09-29
Applicant: Intel Corporation
Inventor: Srinivas V. PIETAMBARAM , Sri Ranga Sai BOYAPATI , Robert A. MAY , Kristof DARMAWIKARTA , Javier SOTO GONZALEZ , Kwangmo LIM
IPC: H01L23/538 , H01L23/00
CPC classification number: H01L23/5389 , H01L23/00 , H01L24/06 , H01L2224/04105 , H01L2224/18 , H01L2224/24137 , H01L2924/18162
Abstract: A foundation layer and methods of forming a conductive via are described. A die pad is formed over a die. A seed layer is deposited over the die pad and the foundation layer. A first photoresist layer is deposited over the seed layer, and the first layer is patterned to form a conductive line opening over the die pad. A conductive material is deposited into the conductive line opening to form a conductive line. A second photoresist layer is deposited over the first layer, and the second layer is patterned to form a via opening over the conductive line. The conductive material is deposited into the via opening to form the conductive via, where the conductive material only deposits on portions of exposed conductive line. The second and first layers are removed. Portions of exposed seed layer are recessed, and then a top surface of the conductive via is exposed.
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