PACKAGE LAND PAD IN CLOSED-LOOP TRACE FOR HIGH SPEED DATA SIGNALING

    公开(公告)号:US20210305138A1

    公开(公告)日:2021-09-30

    申请号:US16828466

    申请日:2020-03-24

    申请人: Intel Corporation

    IPC分类号: H01L23/498 H01R12/71

    摘要: Embodiments disclosed herein include electronic packaged assemblies. In an embodiment, an electronic package comprises first and second surfaces. The second surface has a land pad in a land pad opening. The land pad is spaced away from the land pad opening by an outer gap. The land pad is a closed loop. In an embodiment, the electronic package is electrically coupled to a socket. The socket has an interconnect with a first connector and a second connector. The first connector of the interconnect is directly coupled to at least one portion of the closed loop. In an embodiment, when the first connector is coupled to at least two or more portions of the closed loop, the portions are spaced away from each other by a portion of the inner or outer gap. The closed loop comprises a conductive line continuously extending from a first end to a second end.

    OPTIMAL SIGNAL ROUTING PERFORMANCE THROUGH DIELECTRIC MATERIAL CONFIGURATION DESIGNS IN PACKAGE SUBSTRATE

    公开(公告)号:US20200343175A1

    公开(公告)日:2020-10-29

    申请号:US16392171

    申请日:2019-04-23

    申请人: Intel Corporation

    摘要: Embodiments include package substrates and methods of forming the package substrates. A package substrate includes a first conductive layer in a first dielectric, a second dielectric over the first dielectric, and a second conductive layer in the second dielectric, where the second conductive layer includes first and second traces. The package substrate also includes a third conductive layer over the second dielectric, and a high dielectric constant (Dk) and low DK regions in the first and second dielectrics, where the high Dk region surrounds the first traces, and where the low Dk region surrounds the second traces. The high Dk region may be between the first and third conductive layers. The low Dk region may be between the first and third conductive layers. The package substrate may include a dielectric region in the first and second dielectrics, where the dielectric region separates the high Dk and low Dk regions.

    INTERCONNECT LOSS OF HIGH DENSITY PACKAGE WITH MAGNETIC MATERIAL

    公开(公告)号:US20210104476A1

    公开(公告)日:2021-04-08

    申请号:US16596383

    申请日:2019-10-08

    申请人: Intel Corporation

    IPC分类号: H01L23/64 H01L23/498

    摘要: Embodiments include package substrates and a semiconductor package with such package substrates. A package substrate includes a first conductive layer in a first magnetic layer, and a second magnetic layer over the first magnetic layer, where the first and second magnetic layers include magnetic materials. The package substrate also includes a second conductive layer in the second magnetic layer. The second conductive layer includes a plurality of first traces fully surrounded by the first and second magnetic layers. The package substrate includes a third conductive layer over the second magnetic layer. The magnetic materials may include manganese Mn ferrite materials, Zn/Mn ferrite materials, or Ni/Zn ferrite materials. The magnetic materials include material properties with a low constant value, a magnetic tangent value, a frequency, a base filler chemistry, a filler shape, a filler orientation, a filler percentage, a loading fraction value, a permeability, an insertion loss, and a resin formulation.