公开(公告)号：US11268867B2

公开(公告)日：2022-03-08

申请号：US15844694

申请日：2017-12-18

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： John U. Knickerbocker ,  Minhua Lu ,  Katsuyuki Sakuma

IPC: H01L41/047 ,  H01L41/113 ,  G01L1/22 ,  G01L19/00 ,  G01L9/06 ,  G01L1/18 ,  G01L1/16

Abstract: According to an embodiment of the present invention, a structure for a strain gauge device is provided. The structure comprises a layer of strain gauge material and one or more contact pads positioned directly on the layer of strain gauge material. The structure further comprises a multiplexer, measuring device, amplifier, analog to digital converter, microcontroller, and wireless adapter. According to the structure, the multiplexer selects a given contact pad pair of the one or more contact pad pairs, the measuring device measures signal generated by the layer of strain gauge material between the given contact pad pair, the amplifier amplifies the measured signal, the analog to digital converter converts the amplified analog signal to a digital signal, the microcontroller processes the digital signal, and the wireless adapter transmits the processed digital signal. In addition, the structure may further comprise a battery to provide energy to the structure.

公开(公告)号：US11121005B2

公开(公告)日：2021-09-14

申请号：US16777977

申请日：2020-01-31

Applicant: International Business Machines Corporation

Inventor： Paul S. Andry ,  Bing Dang ,  Jeffrey Donald Gelorme ,  Li-Wen Hung ,  John U. Knickerbocker ,  Cornelia Tsang Yang

IPC: H01L21/56 ,  H01L21/67 ,  H01L21/683 ,  H01L23/00

Abstract: Various embodiments process semiconductor devices. In one embodiment, a release layer is applied to a handler. The at least one singulated semiconductor device is bonded to the handler. The at least one singulated semiconductor device is packaged while it is bonded to the handler. The release layer is ablated by irradiating the release layer through the handler with a laser. The at least one singulated semiconductor device is removed from the transparent handler after the release layer has been ablated.

公开(公告)号：US11039765B2

公开(公告)日：2021-06-22

申请号：US15715558

申请日：2017-09-26

Applicant: International Business Machines Corporation

Inventor： Vince Siu ,  Minhua Lu ,  Evan Colgan ,  Russell Budd ,  John U. Knickerbocker

IPC: A61B5/145 ,  G01N21/64 ,  G01N33/543 ,  G01N33/558 ,  G16H10/40 ,  G01N21/78 ,  G01N21/84

Abstract: A submersible sensor device configured as a small pellet for testing biological and other liquid samples is provided. In one aspect, a sensing device includes: a housing; and one or more sensors contained within the housing, wherein the housing hermetically seals the sensors such that the sensing device is fully submersible in a liquid analyte. A method and system for analysis of a liquid sample using the present sensing device are also provided.

公开(公告)号：US10748877B2

公开(公告)日：2020-08-18

申请号：US16369390

申请日：2019-03-29

Applicant: International Business Machines Corporation

Inventor： Philip G. Emma ,  Hillery C. Hunter ,  John U. Knickerbocker

IPC: H01L25/065 ,  H01L25/00 ,  G11C29/00 ,  G11C29/56 ,  H01L23/498 ,  H01L23/367 ,  H01L23/544 ,  G02B6/122 ,  H01L25/18 ,  H01L21/78 ,  G11C29/52 ,  G11C11/401 ,  G11C29/42

Abstract: Examples of techniques for an integrated wafer-level processing system are disclosed. In one example implementation according to aspects of the present disclosure, an integrated wafer-level processing system includes a memory wafer and a processing element connected to the memory wafer via a data connection.

公开(公告)号：US20200083082A1

公开(公告)日：2020-03-12

申请号：US16670023

申请日：2019-10-31

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Bing Dang ,  Jeffrey D. Gelorme ,  John U. Knickerbocker

IPC: H01L21/683 ,  C08G59/06 ,  C09J163/00 ,  C09J171/00 ,  C08L63/00 ,  C08K3/04 ,  C09J9/00 ,  C08L71/00 ,  H01L21/02

Abstract: A bonding material including a phenoxy resin thermoplastic component, and a carbon black filler component. The carbon black filler component is present in an amount greater than 1 wt. %. The carbon black filler converts the phenoxy resin thermoplastic component from a material that transmits infra-red (IR) wavelengths to a material that absorbs a substantial portion of infra-red (IR) wavelengths.

公开(公告)号：US10522406B2

公开(公告)日：2019-12-31

申请号：US15903973

申请日：2018-02-23

Applicant: International Business Machines Corporation

Inventor： Bing Dang ,  Jeffrey D. Gelorme ,  John U. Knickerbocker

IPC: H01L21/78 ,  H01L23/00 ,  H01L23/31 ,  H01L23/29 ,  H01L23/48 ,  H01L21/56 ,  H01L25/065

Abstract: A support structure for use in fan-out wafer level packaging is provided that includes, a silicon handler wafer having a first surface and a second surface opposite the first surface, a release layer is located above the first surface of the silicon handler wafer, and a layer selected from the group consisting of an adhesive layer and a redistribution layer is located on a surface of the release layer. After building-up a fan-out wafer level package on the support structure, infrared radiation is employed to remove (via laser ablation) the release layer, and thus remove the silicon handler wafer from the fan-out wafer level package.

公开(公告)号：US10325785B2

公开(公告)日：2019-06-18

申请号：US15855134

申请日：2017-12-27

Applicant: International Business Machines Corporation

Inventor： Paul S. Andry ,  Bing Dang ,  Jeffrey Donald Gelorme ,  Li-Wen Hung ,  John U. Knickerbocker ,  Cornelia Tsang Yang

IPC: H01L21/56 ,  H01L21/67 ,  H01L21/683 ,  H01L23/00

Abstract: Various embodiments process semiconductor devices. In one embodiment, a release layer is applied to a handler. The at least one singulated semiconductor device is bonded to the handler. The at least one singulated semiconductor device is packaged while it is bonded to the handler. The release layer is ablated by irradiating the release layer through the handler with a laser. The at least one singulated semiconductor device is removed from the transparent handler after the release layer has been ablated.

公开(公告)号：US10261067B2

公开(公告)日：2019-04-16

申请号：US15854994

申请日：2017-12-27

Applicant: International Business Machines Corporation

Inventor： John U. Knickerbocker ,  Effendi Leobandung

IPC: G01N33/487

Abstract: A nanopore FET sensor device and method of making. The nanopore FET sensor device includes a FET device stack of material layers including a source, channel and drain layers, and a nanoscale hole through the FET device stack to permit flow of strands of molecular material, e.g., DNA, therethrough. The perimeter of the nanoscale hole forms a FET device gate surface. The source and drain layers are provided with respective contacts for connection with measuring instruments that measure a flow of current therebetween. The molecular strands having charged portions pass from one side of a wafer substrate to the other side through the (nanopore) gate and modulate the current flow sensed at the source or drain terminals. The sensor collects real-time measurements of the current flow modulations for use in identifying the type of molecule. Multiple measurements by the same nanopore FET sensor are collected and compared for enhanced detection.

公开(公告)号：US20190091786A1

公开(公告)日：2019-03-28

申请号：US15719451

申请日：2017-09-28

Applicant: International Business Machines Corporation

Inventor： Jae-Woong Nah ,  John U. Knickerbocker ,  Eric P. Lewandowski

IPC: B23K3/06 ,  B23K3/08

Abstract: An improved molten solder injection head having a vacuum filter and differential gauge system is provided. In one aspect, an injection head is provided. The injection head includes: a reservoir; an injection port on a bottom of the injection head connected to the reservoir; a vacuum port adjacent to the injection port on the bottom of the injection head connected to a vacuum source; and a filter disposed between the bottom of the injection head and the vacuum source. A method for molten solder injection using the present injection head is provided.

公开(公告)号：US10243091B2

公开(公告)日：2019-03-26

申请号：US15944222

申请日：2018-04-03

Applicant: International Business Machines Corporation

Inventor： Bing Dang ,  John U. Knickerbocker ,  Steven Lorenz Wright ,  Cornelia Tsang Yang

IPC: H01L31/024 ,  H01L31/18 ,  H01J1/30

Abstract: A semiconductor structure includes a thin-film device layer, an optoelectronic device disposed in the thin-film device layer, and a surrogate substrate permanently attached to the thin film device layer. The surrogate substrate is optically transparent and has a thermal conductivity of at least 300 W/m-K. The optoelectronic device excitable by visible light transmitted through the surrogate substrate.