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71.发明申请公开(公告)号：US20190244647A1
公开(公告)日：2019-08-08
申请号：US16386490
申请日：2019-04-17
Applicant: International Business Machines Corporation
Inventor： Guohan Hu , Daniel C. Worledge
CPC classification number: G11C11/161 , G11C11/1675 , H01L27/228 , H01L43/02 , H01L43/08 , H01L43/10 , H01L43/12
Abstract: Embodiments of the invention are directed to a magnetic tunnel junction (MTJ) storage element that includes a reference layer, a tunnel barrier and a free layer on an opposite side of the tunnel barrier layer from the reference layer. The reference layer has a fixed magnetization direction. The free layer includes a first region, a second region and a third region. The third region is formed from a third material that is configured to magnetically couple the first region and the second region. The first region is formed from a first material having a first predetermined magnetic moment, and the second region is formed from a second material having a second predetermined magnetic moment. The first predetermined magnetic moment is lower that the second predetermined magnetic moment.
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公开(公告)号：US10361361B2
公开(公告)日：2019-07-23
申请号：US15094064
申请日：2016-04-08
Inventor： Guohan Hu , Younghyun Kim , Daniel C. Worledge
Abstract: Techniques relate to forming a magnetic tunnel junction (MTJ). A synthetic antiferromagnetic reference layer is adjacent to a tunnel barrier layer. The synthetic antiferromagnetic reference layer includes a first magnetic layer, a second magnetic layer, and a reference spacer layer sandwiched between the first magnetic layer and the second magnetic layer. A magnetic free layer is adjacent to the tunnel barrier layer so as to be opposite the synthetic antiferromagnetic reference layer. The synthetic antiferromagnetic reference layer has a thickness of at least one of 3 nanometers (nm), 4 nm, and 3-4 nm.
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公开(公告)号：US10230043B2
公开(公告)日：2019-03-12
申请号：US15465050
申请日：2017-03-21
Inventor： Guohan Hu , Younghyun Kim , Chandrasekara Kothandaraman , Jeong-Heon Park
Abstract: Memory devices and methods of forming the same include forming a memory stack over a bottom electrode. The memory stack has a fixed magnetic layer, a tunnel barrier layer on the fixed magnetic layer, and a free magnetic layer formed on the tunnel barrier layer. A boron-segregating layer is formed directly on the free magnetic layer. The memory stack is etched into a pillar. A top electrode is formed over the pillar.
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公开(公告)号：US20180198058A1
公开(公告)日：2018-07-12
申请号：US15403764
申请日：2017-01-11
Applicant: International Business Machines Corporation
Inventor： Matthias G. Gottwald , Guohan Hu
CPC classification number: H01L43/02 , H01L27/222 , H01L43/10 , H01L43/12
Abstract: A double magnetic tunnel junction (DMTJ) device includes a fixed reference layer of a first magnetic material having a perpendicular magnetic anisotropy with a magnetic moment that is fixed. The device also includes a free layer of a second magnetic material having a perpendicular magnetic anisotropy with a magnetic moment that is changeable based on a current. A dynamic reference layer of a third magnetic material has an in-plane magnetic anisotropy and a changeable magnetic moment. The free layer is disposed between the fixed reference layer and the dynamic reference layer.
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公开(公告)号：US20180108468A1
公开(公告)日：2018-04-19
申请号：US15292625
申请日：2016-10-13
Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
Inventor： Guohan Hu , Naigang Wang
CPC classification number: H01F41/046 , H01F3/10 , H01F17/0033 , H01F27/2804 , H01F2003/106
Abstract: A planar magnetic structure includes a closed loop structure having a plurality of core segments divided into at least two sets. A coil is formed about one or more core segments. A first antiferromagnetic layer is formed on a first set of core segments, and a second antiferromagnetic layer is formed on a second set of core segments. The first and second antiferromagnetic layers include different blocking temperatures and have an easy axis pinning a magnetic moment in two different directions, wherein when current flows through the coil, the magnetic moments rotate to form a closed magnetic loop in the closed loop structure.
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Patent Agency Ranking
公开(公告)号：US09893273B2
公开(公告)日：2018-02-13
申请号：US15094052
申请日：2016-04-08
Inventor： Guohan Hu , Junghyuk Lee , Jeong-Heon Park
CPC classification number: H01L43/10 , G11C11/161 , H01L43/08 , H01L43/12
Abstract: Techniques relate to forming a semiconductor device. A magnetic pinned layer is formed adjacent to a tunnel barrier layer. A magnetic free layer is formed adjacent to the tunnel barrier layer, such that the tunnel barrier layer is sandwiched between the magnetic pinned layer and the magnetic free layer. The magnetic free layer includes a first magnetic layer, a second magnetic layer disposed on top of the first magnetic layer, and a third magnetic layer disposed on top of the second magnetic layer. The second magnetic layer of the magnetic free layer includes an additional material, and the additional material is a selection of at least one of Be, Mg, Al, Ca, B, C, Si, V, Cr, Ti, and Mn.
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公开(公告)号：US09892840B2
公开(公告)日：2018-02-13
申请号：US15629225
申请日：2017-06-21
Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
Inventor： Guohan Hu , Daniel C. Worledge
CPC classification number: H01F10/329 , G11C11/161 , H01L27/222 , H01L27/226 , H01L43/02 , H01L43/08 , H01L43/10 , H01L43/12
Abstract: Magnetoresistive random access memory devices include a first magnetic layer, a tunnel barrier layer formed on the first magnetic layer, and a second magnetic layer formed on the tunnel barrier layer. The tunnel barrier includes first regions having a first thickness and second regions having a second thickness that is greater than the first thickness. The tunnel barrier layer includes a first barrier layer formed from a first material and a second barrier layer formed from a second material different from the first material, the second layer being present only in the second regions.
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公开(公告)号：US20170170391A1
公开(公告)日：2017-06-15
申请号：US15442954
申请日：2017-02-27
Applicant: International Business Machines Corporation
Inventor： Guohan Hu , Daniel C. Worledge
CPC classification number: H01L43/10 , G11C11/161 , H01F10/14 , H01F10/16 , H01F10/3254 , H01F10/3286 , H01F41/32 , H01L43/02 , H01L43/08 , H01L43/12
Abstract: A magnetic material includes a cobalt layer between opposing iron layers. The iron layers include iron and are body-centered cubic (BCC), the cobalt layer comprises cobalt and is BCC or amorphous, and the magnetic material has a perpendicular magnetic anisotropy (PMA).
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公开(公告)号：US09620708B2
公开(公告)日：2017-04-11
申请号：US15177619
申请日：2016-06-09
Applicant: International Business Machines Corporation
Inventor： Guohan Hu , Daniel C. Worledge
CPC classification number: H01L43/10 , G11C11/161 , H01F10/14 , H01F10/16 , H01F10/3254 , H01F10/3286 , H01F41/32 , H01L43/02 , H01L43/08 , H01L43/12
Abstract: A magnetic material includes a cobalt layer between opposing iron layers. The iron layers include iron and are body-centered cubic (BCC), the cobalt layer comprises cobalt and is BCC or amorphous, and the magnetic material has a perpendicular magnetic anisotropy (PMA).
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公开(公告)号：US20170054072A1
公开(公告)日：2017-02-23
申请号：US15343651
申请日：2016-11-04
Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
Inventor： Guohan Hu , Daniel C. Worledge
CPC classification number: H01F10/329 , G11C11/161 , H01L27/222 , H01L27/226 , H01L43/02 , H01L43/08 , H01L43/10 , H01L43/12
Abstract: Magnetoresistive random access memory (MRAM) devices include a first magnetic layer. A tunnel barrier layer is formed on the first magnetic layer. The tunnel barrier includes first regions having a first thickness and second regions having a second thickness that is greater than the first thickness. A second magnetic layer is formed on the tunnel barrier layer.
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