公开(公告)号：US20140022700A1

公开(公告)日：2014-01-23

申请号：US13553846

申请日：2012-07-20

申请人： Xin Zhao ,  Yu-Ming Lin

发明人： Xin Zhao ,  Yu-Ming Lin

IPC分类号： H01G9/155 ,  B29C41/22 ,  C23C16/01 ,  B29C41/08 ,  H01M6/00 ,  H01M4/58 ,  H01M4/04 ,  B82Y99/00 ,  B82Y40/00

CPC分类号： H01M4/0428 ,  B82Y30/00 ,  B82Y40/00 ,  H01M4/133 ,  H01M4/1393 ,  H01M4/362 ,  H01M4/587 ,  Y10T29/49115

摘要： Aspects of the invention are directed to a method for forming a graphene composite structure. Initially, an encapsulating film is formed on a substrate. The encapsulating film comprises graphene. Subsequently, a plurality of particles are deposited on the encapsulating film, and then a temporary layer is deposited on the plurality of active particles and the encapsulating film. The substrate is then removed. Lastly, the temporary layer is also removed so as to cause the plurality of particles to form a cluster that is at least partially encapsulated by the encapsulating film.

摘要翻译： 本发明的方面涉及一种形成石墨烯复合结构的方法。 最初，在基板上形成封装膜。 封装膜包括石墨烯。 随后，在封装膜上沉积多个颗粒，然后在多个活性颗粒和封装膜上沉积临时层。 然后去除衬底。 最后，临时层也被去除，从而使多个颗粒形成至少部分被封装膜封装的簇。

公开(公告)号：US08546246B2

公开(公告)日：2013-10-01

申请号：US13006081

申请日：2011-01-13

申请人： Yu-Ming Lin ,  Jeng-Bang Yau

发明人： Yu-Ming Lin ,  Jeng-Bang Yau

IPC分类号： H01L21/20

CPC分类号： H01L29/16 ,  H01L21/02378 ,  H01L21/02381 ,  H01L21/0242 ,  H01L21/02488 ,  H01L21/02527 ,  H01L21/02656 ,  H01L29/1606 ,  H01L29/66742 ,  H01L29/78603 ,  H01L29/78684

摘要： Graphene- and/or carbon nanotube-based radiation-hard transistor devices and techniques for the fabrication thereof are provided. In one aspect, a method of fabricating a radiation-hard transistor is provided. The method includes the following steps. A radiation-hard substrate is provided. A carbon-based material is formed on the substrate wherein a portion of the carbon-based material serves as a channel region of the transistor and other portions of the carbon-based material serve as source and drain regions of the transistor. Contacts are formed to the portions of the carbon-based material that serve as the source and drain regions of the transistor. A gate dielectric is deposited over the portion of the carbon-based material that serves as the channel region of the transistor. A top-gate contact is formed on the gate dielectric.

公开(公告)号：US20110114919A1

公开(公告)日：2011-05-19

申请号：US12617770

申请日：2009-11-13

申请人： Keith A. Jenkins ,  Yu-Ming Lin ,  Alberto Valdes-Garcia

发明人： Keith A. Jenkins ,  Yu-Ming Lin ,  Alberto Valdes-Garcia

IPC分类号： H01L29/16 ,  H01L21/04

CPC分类号： H01L29/78684

摘要： A graphene field effect transistor includes a gate stack, the gate stack including a seed layer, a gate oxide formed over the seed layer, and a gate metal formed over the gate oxide; an insulating layer; and a graphene sheet displaced between the seed layer and the insulating layer.

摘要翻译： 石墨烯场效应晶体管包括栅极堆叠，栅极堆叠包括种子层，形成在种子层上的栅极氧化物和形成在栅极氧化物上的栅极金属; 绝缘层; 以及在种子层和绝缘层之间移动的石墨烯片。

公开(公告)号：US20110114918A1

公开(公告)日：2011-05-19

申请号：US12620320

申请日：2009-11-17

申请人： Yu-Ming Lin ,  Jeng-Bang Yau

发明人： Yu-Ming Lin ,  Jeng-Bang Yau

IPC分类号： H01L29/66 ,  H01L21/336

CPC分类号： H01L29/1606 ,  H01L29/66742 ,  H01L29/7781 ,  H01L29/78687

摘要： A semiconductor-on-insulator structure and a method of forming the silicon-on-insulator structure including an integrated graphene layer are disclosed. In an embodiment, the method comprises processing a silicon material to form a buried oxide layer within the silicon material, a silicon substrate below the buried oxide, and a silicon-on-insulator layer on the buried oxide. A graphene layer is transferred onto the silicon-on-insulator layer. Source and drain regions are formed in the silicon-on-insulator layer, and a gate is formed above the graphene. In one embodiment, the processing includes growing a respective oxide layer on each of first and second silicon sections, and joining these silicon sections together via the oxide layers to form the silicon material. The processing, in an embodiment, further includes removing a portion of the first silicon section, leaving a residual silicon layer on the bonded oxide, and the graphene layer is positioned on this residual silicon layer.

摘要翻译： 公开了一种绝缘体上半导体结构和一种形成包括一体化石墨烯层的绝缘体上硅结构的方法。 在一个实施例中，该方法包括处理硅材料以在硅材料内形成掩埋氧化物层，在掩埋氧化物之下形成硅衬底，以及在掩埋氧化物上形成绝缘体上硅层。 将石墨烯层转移到绝缘体上硅层上。 源极和漏极区域形成在绝缘体上硅层中，并且在石墨烯上方形成栅极。 在一个实施例中，该处理包括在第一和第二硅部分中的每一个上生长相应的氧化物层，并且经由氧化物层将这些硅部分连接在一起以形成硅材料。 在一个实施例中，所述处理还包括去除所述第一硅部分的一部分，在所述键合的氧化物上留下残留的硅层，并且所述石墨烯层位于所述剩余硅层上。

公开(公告)号：US20110050450A1

公开(公告)日：2011-03-03

申请号：US12855800

申请日：2010-08-13

申请人： Yu-Ming Lin ,  Kun-Nan Cheng

发明人： Yu-Ming Lin ,  Kun-Nan Cheng

IPC分类号： G08C19/00

CPC分类号： G08C23/04

摘要： A universal infrared receiving apparatus is provided. The universal infrared receiving apparatus includes a slicer, a non-volatile memory, a volatile memory and a comparison apparatus. The slicer slices a remote control command waveform into digital waveform data. The non-volatile memory pre-stores target waveform data. The volatile memory stores the digital waveform data and the target waveform data. The comparison apparatus, coupled to the volatile memory, compares the digital waveform data and the target waveform data to generate a comparison result.

摘要翻译： 提供通用的红外线接收装置。 通用红外接收装置包括限幅器，非易失性存储器，易失性存储器和比较装置。 切片机将遥控命令波形分割成数字波形数据。 非易失性存储器预存储目标波形数据。 易失性存储器存储数字波形数据和目标波形数据。 耦合到易失性存储器的比较装置比较数字波形数据和目标波形数据以产生比较结果。

公开(公告)号：US20090246922A1

公开(公告)日：2009-10-01

申请号：US12056277

申请日：2008-03-27

申请人： Meng-Yi Wu ,  Cheng-Tung Huang ,  Wen-Han Hung ,  Shyh-Fann Ting ,  Kun-Hsien Lee ,  Li-Shian Jeng ,  Shih-Jung Tu ,  Yu-Ming Lin ,  Yao-Chin Cheng

发明人： Meng-Yi Wu ,  Cheng-Tung Huang ,  Wen-Han Hung ,  Shyh-Fann Ting ,  Kun-Hsien Lee ,  Li-Shian Jeng ,  Shih-Jung Tu ,  Yu-Ming Lin ,  Yao-Chin Cheng

IPC分类号： H01L21/8238

CPC分类号： H01L21/823814 ,  H01L21/823807 ,  H01L29/7848

摘要： A method of forming CMOS transistor is disclosed. A CMOS transistor having a first active area and a second active area is provided. In order to maintain the concentration of the dopants in the second active area, according to the method of the present invention an ion implantation process is performed to form a lightly doped drain (LDD) in the second active area after an epitaxial layer is formed in the first active area. On the other hand, the ion implantation process is performed to form the respective LDD of the first active area and the second active area. After the epitaxial layer in the first active area is formed, another ion implantation process is performed to implant dopants into the LDD of the second active area again.

摘要翻译： 公开了一种形成CMOS晶体管的方法。 提供具有第一有源区和第二有源区的CMOS晶体管。 为了保持第二有源区中掺杂剂的浓度，根据本发明的方法，在形成外延层之后，在第二有源区中进行离子注入工艺以形成轻掺杂漏极（LDD） 第一个活跃区域。 另一方面，进行离子注入处理，以形成第一有源区和第二有源区的相应LDD。 在形成第一有源区中的外延层之后，再次执行另一种离子注入工艺以将掺杂剂注入到第二有源区的LDD中。

公开(公告)号：US20080311713A1

公开(公告)日：2008-12-18

申请号：US12185740

申请日：2008-08-04

申请人： Shin-Chii Lu ,  Yu-Ming Lin ,  Min-Hung Lee ,  Zing-Way Pei ,  Wen-Yi Hsieh

发明人： Shin-Chii Lu ,  Yu-Ming Lin ,  Min-Hung Lee ,  Zing-Way Pei ,  Wen-Yi Hsieh

IPC分类号： H01L21/8238

CPC分类号： H01L29/1054 ,  H01L21/265 ,  H01L21/823807 ,  H01L21/823864 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/78 ,  H01L29/7843 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention provides a complementary metal-oxide-semiconductor (CMOS) device and a fabrication method thereof. The CMOSFET device includes a compressively strained SiGe channel for a PMOSFET, as well as a tensile strained Si channel for an NMOSFET, thereby enhancing hole and electron mobility for the PMOSFET and the NMOSFET, respectively. As such, the threshold voltages of the two types of transistors can be obtained in oppositely symmetric by single metal gate.

摘要翻译： 本发明提供一种互补金属氧化物半导体（CMOS）器件及其制造方法。 CMOSFET器件包括用于PMOSFET的压缩应变SiGe沟道，以及用于NMOSFET的拉伸应变Si沟道，从而分别增强PMOSFET和NMOSFET的空穴和电子迁移率。 因此，可以通过单金属栅极相反对称地获得两种类型的晶体管的阈值电压。

公开(公告)号：US20070149393A1

公开(公告)日：2007-06-28

申请号：US11512220

申请日：2006-08-30

申请人： Chia-Hung Huang ,  Yao-Ling Huang ,  Yao-Hsuan Tseng ,  Yu-Ming Lin ,  Shu-Ling Liu

发明人： Chia-Hung Huang ,  Yao-Ling Huang ,  Yao-Hsuan Tseng ,  Yu-Ming Lin ,  Shu-Ling Liu

IPC分类号： B01J23/00

CPC分类号： B01J35/004 ,  B01J35/023 ,  B01J35/026 ,  B01J37/0215 ,  B01J37/04

摘要： The present invention relates to a nano-sized photocatalytic sol and application thereof. The invention utilizes spherical nano-photocatalyst and non-spherical photocatalytic sol for coating a photocatalyst layer on a substrate. Because of the stereo, interlaced and composite structure between spherical photocatalyst and non-spherical photocatalyst, a hard and well adhesion coated layer of photocatalyst with good photocatalytic activity can be obtained without using binder.

摘要翻译： 本发明涉及一种纳米级光催化溶胶及其应用。 本发明利用球形纳米光催化剂和非球形光催化溶胶在基材上涂覆光催化剂层。 由于球形光催化剂和非球形光催化剂之间的立体，交错和复合结构，可以在不使用粘合剂的情况下获得具有良好光催化活性的硬质和良好粘附的光催化剂层。

公开(公告)号：US20060063668A1

公开(公告)日：2006-03-23

申请号：US11019384

申请日：2004-12-23

申请人： Yao-Hsuan Tseng ,  Chien-Sheng Kuo ,  Yu-Ming Lin

发明人： Yao-Hsuan Tseng ,  Chien-Sheng Kuo ,  Yu-Ming Lin

IPC分类号： B01J21/06

CPC分类号： B82Y30/00 ,  B01J21/063 ,  B01J35/0013 ,  B01J35/004 ,  B01J37/0238 ,  C01G23/07 ,  C01P2002/72 ,  C01P2004/03

摘要： A photocatalyst powder and the method of chemical vapor deposition for producing the same are provided. Titanium salt is injected into a chamber by the carrier gas. After reaction with oxygen gas, the photocatalyst particle is introduced to a low temperature collection device. The synthesized titanium dioxide powder is nano-sized, well-dispersed and anatase-crystallinity. The air contaminant was degraded with this photocatalyst under 315 nm to 700 nm irradiation. The method enhances the conversion of sunlight irradiation to chemical energy.

摘要翻译： 提供光催化剂粉末及其制造方法。 钛盐通过载气注入室中。 在与氧气反应后，将光催化剂颗粒引入低温收集装置。 合成的二氧化钛粉末具有纳米尺寸，分散均匀和锐钛矿结晶度。 在315nm〜700nm照射下，该光催化剂使空气污染物降解。 该方法提高了阳光照射对化学能的转换。

公开(公告)号：US06104413A

公开(公告)日：2000-08-15

申请号：US38760

申请日：1998-03-11

申请人： Chun-Yang Cheng ,  Sy-Shann Luo ,  Chun-Kai Huang ,  Yu-Ming Lin

发明人： Chun-Yang Cheng ,  Sy-Shann Luo ,  Chun-Kai Huang ,  Yu-Ming Lin

IPC分类号： G06T1/60 ,  G06F13/00

CPC分类号： G06T1/60

摘要： Methods and systems for storing texels in memory banks in a manner that allows the retrieval of four neighboring texels within a single cycle are disclosed. The four neighboring texels are stored in separate memory banks according to a predetermined set of combinations of 2-D (u, v) coordinate pairs. In interpolating the color value of a color texel C(u, v), a texel buffer retrieves the four neighboring texels in a single cycle to reduce the memory access time. In one embodiment, a plurality of memory banks in the texel buffer are designed in an interleave mode. In an alternative embodiment, a plurality of memory banks in the texel buffer are implemented in a noninterleave mode. In both embodiments, a texel buffer retrieves the four neighboring texels of a color texel C(u, v) within a single cycle according to a predetermined set of criteria.

摘要翻译： 公开了以允许在单个周期内检索四个相邻纹素的方式在存储体中存储纹素的方法和系统。 根据预定的2-D（u，v）坐标对的组合，四个相邻的纹素被存储在分开的存储体中。 在内插颜色纹理C（u，v）的颜色值时，纹素缓冲器在单个周期中检索四个相邻纹理，以减少存储器访问时间。 在一个实施例中，纹理缓冲器中的多个存储体被设计成交错模式。 在替代实施例中，纹理缓冲器中的多个存储体以不间断模式实现。 在两个实施例中，纹素缓冲器根据预定的一组标准在单个周期内检索颜色纹理C（u，v）的四个相邻纹理。