公开(公告)号：US20060292781A1

公开(公告)日：2006-12-28

申请号：US11473487

申请日：2006-06-23

申请人： Chang-Hyun Lee

发明人： Chang-Hyun Lee

IPC分类号： H01L21/8234 ,  H01L29/94

CPC分类号： H01L29/7881 ,  H01L21/28282 ,  H01L27/115 ,  H01L27/11568 ,  H01L29/42332 ,  H01L29/66795 ,  H01L29/66833 ,  H01L29/785 ,  H01L29/792

摘要： A FinFET includes a fin that is on a substrate and extends away from the substrate. A device isolation layer is disposed on the substrate on both sides of the fin. An insulating layer is between the fin and the substrate. The insulating layer is directly connected to the device isolation layer and has a different thickness than the device isolation layer. A gate electrode crosses over the fin. A gate insulating layer is between the gate electrode and the fin. Source and drain regions are on the fins and on opposite sides of the gate electrode. Related nonvolatile memory devices that include FinFETs and methods of making FinFETs and nonvolatile memory devices are also disclosed.

摘要翻译： FinFET包括在衬底上并且远离衬底延伸的翅片。 器件隔离层设置在鳍片两侧的衬底上。 绝缘层位于散热片和基板之间。 绝缘层直接连接到器件隔离层，并且具有与器件隔离层不同的厚度。 栅电极跨过鳍。 栅极绝缘层位于栅电极和鳍之间。 源极和漏极区域位于鳍状物和栅电极的相对侧上。 还公开了包括FinFET和制造FinFET和非易失性存储器件的方法的相关非易失性存储器件。

公开(公告)号：US07122426B2

公开(公告)日：2006-10-17

申请号：US10788002

申请日：2004-02-25

申请人： Chang-Hyun Lee ,  Kyu-Charn Park ,  Jeong-Hyuk Choi ,  Sung-Hoi Hur

发明人： Chang-Hyun Lee ,  Kyu-Charn Park ,  Jeong-Hyuk Choi ,  Sung-Hoi Hur

IPC分类号： H01L21/8247

CPC分类号： H01L27/11521 ,  H01L27/115 ,  H01L27/11519 ,  Y10S257/905

摘要： This disclosure provides cells of nonvolatile memory devices with floating gates and methods for fabricating the same. The cell of the nonvolatile memory device includes device isolation layers in parallel with each other on a predetermined region of a semiconductor substrate that define a plurality of active regions. Each device isolation layer has sidewalls that project over the semiconductor substrate. A plurality of word lines crosses over the device isolation layers. A tunnel oxide layer, a floating gate, a gate interlayer dielectric layer, and a control gate electrode are sequentially stacked between each active region and each word line. The floating gate and the control gate electrode have sidewalls that are self-aligned to the adjacent device isolation layers. The method for forming the self-aligned floating gate and the control gate electrode includes forming trenches in a semiconductor substrate to define a plurality of active regions and concurrently forming an oxide layer pattern, a floating gate pattern, a dielectric layer pattern and a control gate pattern that are sequentially stacked. A conductive layer is then formed on the device isolation layers and the control gate pattern. Thereafter, the conductive layer, the control gate pattern, the dielectric layer pattern, the floating gate pattern, and the oxide layer pattern are successively patterned.

摘要翻译： 本公开提供具有浮动栅极的非易失性存储器件单元以及用于制造其的方法。 非易失性存储器件的单元包括在限定多个有源区域的半导体衬底的预定区域上彼此并联的器件隔离层。 每个器件隔离层具有突出在半导体衬底上的侧壁。 多个字线跨越器件隔离层。 隧道氧化物层，浮置栅极，栅极层间电介质层和控制栅极电极顺序堆叠在每个有源区域和每条字线之间。 浮栅和控制栅极具有与相邻器件隔离层自对准的侧壁。 形成自对准浮栅和控制栅极的方法包括在半导体衬底中形成沟槽以限定多个有源区并同时形成氧化物层图案，浮栅图案，电介质层图案和控制栅极 顺序堆叠的图案。 然后在器件隔离层和控制栅极图案上形成导电层。 此后，连续地形成导电层，控制栅极图案，电介质层图案，浮栅图案和氧化物层图案。

公开(公告)号：US06818944B2

公开(公告)日：2004-11-16

申请号：US10386620

申请日：2003-03-11

申请人： Chang-Hyun Lee

发明人： Chang-Hyun Lee

IPC分类号： H01L29792

CPC分类号： H01L29/513 ,  H01L27/115 ,  H01L27/11521 ,  H01L29/517 ,  H01L29/518 ,  H01L29/792

摘要： A lower insulation layer, a charge storing layer, and an upper insulation layer are sequentially stacked on a substrate to form a gate insulation layer. A gate conductive layer is formed on the gate insulation layer. The gate electrode is patterned to expose a surface of the gate insulation layer. The charge storing layer is a barrier layer to oxygen diffusion during oxidization for curing etching damages caused by patterning. Thus, a gate bird's beak is prevented in the lower insulation layer. Spacers are formed on sidewalls of the gate electrode. The upper insulation layer is etched using the gate electrode and the spacers as an etch mask. Impurity ions are implanted into the substrate adjacent to the gate electrode to form an impurity region. Since an upper insulation layer is not exposed during the ion implantation process, the upper insulation layer is not damaged.

摘要翻译： 依次将下绝缘层，电荷存储层和上绝缘层堆叠在基板上以形成栅极绝缘层。 在栅极绝缘层上形成栅极导电层。 图案化栅极以暴露栅极绝缘层的表面。 电荷存储层是氧化期间氧扩散的阻挡层，用于固化由图案化引起的蚀刻损伤。 因此，在下绝缘层中防止了门鸟的喙。 隔板形成在栅电极的侧壁上。 使用栅电极和间隔物作为蚀刻掩模蚀刻上绝缘层。 将杂质离子注入到与栅电极相邻的衬底中以形成杂质区。 由于在离子注入过程中不会暴露上绝缘层，所以上绝缘层不被损坏。

公开(公告)号：US09577115B2

公开(公告)日：2017-02-21

申请号：US13195347

申请日：2011-08-01

申请人： Byung-Kyu Cho ,  Chang-Hyun Lee ,  Young-Woo Park

发明人： Byung-Kyu Cho ,  Chang-Hyun Lee ,  Young-Woo Park

IPC分类号： H01L21/70 ,  H01L29/788 ,  H01L21/764 ,  H01L27/115 ,  H01L29/423

CPC分类号： H01L29/7881 ,  H01L21/764 ,  H01L27/11521 ,  H01L29/42336

摘要： A semiconductor device has an isolation layer pattern, a plurality of gate structures, and a first insulation layer pattern. The isolation layer pattern is formed on a substrate and has a recess thereon. The gate structures are spaced apart from each other on the substrate and the isolation layer pattern. The first insulation layer pattern is formed on the substrate and covers the gate structures and an inner wall of the recess. The first insulation layer pattern has a first air gap therein.

摘要翻译： 半导体器件具有隔离层图案，多个栅极结构和第一绝缘层图案。 隔离层图案形成在基板上并且在其上具有凹部。 栅极结构在衬底和隔离层图案上彼此间隔开。 第一绝缘层图案形成在基板上并且覆盖该凹槽的栅极结构和内壁。 第一绝缘层图案中具有第一气隙。

公开(公告)号：US20140269080A1

公开(公告)日：2014-09-18

申请号：US14192544

申请日：2014-02-27

申请人： Chang-Hyun Lee

发明人： Chang-Hyun Lee

IPC分类号： G11C16/10 ,  G11C16/30 ,  G11C16/04

CPC分类号： G11C16/10 ,  G11C16/0483 ,  G11C16/30 ,  G11C16/3427

摘要： A non-volatile memory device includes a memory cell array and a voltage generator. The memory cell array has a plurality of cell strings in which a plurality of memory cells are connected with each other in series between a string select transistor and a ground select transistor. The voltage generator generates a program voltage, a first pass voltage, and a second pass voltage. A first boost channel voltage applied when programming an outermost memory cell from among the memory cells of each of non-selected cell strings of the cell strings is lower than a second boost channel voltage applied when programming one of remaining memory cells except for the outermost memory cell. The non-volatile memory device prevents programming disturb caused by hot carrier injection.

摘要翻译： 非易失性存储器件包括存储单元阵列和电压发生器。 存储单元阵列具有多个单元串，其中多个存储单元串联连接在串选择晶体管和接地选择晶体管之间。 电压发生器产生编程电压，第一通过电压和第二通过电压。 当从单元串的未选择单元串中的每一个的存储器单元中编程最外层存储单元时施加的第一升压通道电压低于在编程除了最外存储器之外的其余存储单元之一时应用的第二升压通道电压 细胞。 非易失性存储器件防止由热载流子注入引起的编程干扰。

公开(公告)号：US08552488B2

公开(公告)日：2013-10-08

申请号：US13181134

申请日：2011-07-12

申请人： Chang-Hyun Lee ,  Dong-Gun Park

发明人： Chang-Hyun Lee ,  Dong-Gun Park

IPC分类号： H01L29/788

CPC分类号： H01L21/265 ,  B82Y10/00 ,  H01L21/28202 ,  H01L21/28273 ,  H01L21/28282 ,  H01L27/115 ,  H01L27/11521 ,  H01L27/11568 ,  H01L29/42324 ,  H01L29/513 ,  H01L29/66825 ,  H01L29/66833 ,  H01L29/7881 ,  H01L29/7885 ,  H01L29/792

摘要： Nonvolatile memory devices are provided including an integrated circuit substrate and a charge storage pattern on the integrated circuit substrate. The charge storage pattern has a sidewall and a tunnel insulating layer is provided between the charge storage pattern and the integrated circuit substrate. A gate pattern is provided on the charge storage pattern. A blocking insulating layer is provided between the charge storage pattern and the gate pattern. The sidewall of the charge storage pattern includes a first nitrogen doped layer. Related methods of fabricating nonvolatile memory devices are also provided herein.

摘要翻译： 在集成电路基板上提供集成电路基板和电荷存储图案的非易失性存储器件。 电荷存储图案具有侧壁，并且在电荷存储图案和集成电路基板之间设置隧道绝缘层。 在电荷存储图案上提供栅极图案。 在电荷存储图案和栅极图案之间设置隔离绝缘层。 电荷存储图案的侧壁包括第一氮掺杂层。 本文还提供了制造非易失性存储器件的相关方法。

公开(公告)号：US20120288007A1

公开(公告)日：2012-11-15

申请号：US13522408

申请日：2011-01-14

申请人： Chang-Hyun Lee ,  Tammy Lee ,  Jianle Chen ,  Dae-Sung Cho ,  Woo-jin Han ,  Il-koo Kim

发明人： Chang-Hyun Lee ,  Tammy Lee ,  Jianle Chen ,  Dae-Sung Cho ,  Woo-jin Han ,  Il-koo Kim

IPC分类号： H04N7/32

CPC分类号： H04N19/103 ,  H04N19/119 ,  H04N19/176 ,  H04N19/46 ,  H04N19/57 ,  H04N19/61

摘要： A video encoding method and apparatus and a video decoding method and apparatus are provided. The video encoding method includes: prediction encoding in units of a coding unit as a data unit for encoding a picture, by using partitions determined based on a first partition mode and a partition level, so as to select a partition for outputting an encoding result from among the determined partitions; and encoding and outputting partition information representing a first partition mode and a partition level of the selected partition. The first partition mode represents a shape and directionality of a partition as a data unit for performing the prediction encoding on the coding unit, and the partition level represents a degree to which the coding unit is split into partitions for detailed motion prediction.

摘要翻译： 提供了视频编码方法和装置以及视频解码方法和装置。 视频编码方法包括：通过使用基于第一分区模式和分区级别确定的分区，以编码单位为单位的预测编码，作为用于编码图像的数据单元，以便选择用于输出编码结果的分区 在确定的分区中; 以及编码并输出表示所选分区的第一分区模式和分区级别的分区信息。 第一分区模式表示作为用于在编码单元上执行预测编码的数据单元的分区的形状和方向性，并且分区级别表示编码单元被分割成用于详细运动预测的分区的程度。

公开(公告)号：US08189499B2

公开(公告)日：2012-05-29

申请号：US12107817

申请日：2008-04-23

申请人： Do-Young Joung ,  Tae-Sung Park ,  Jae-Hoon Kwon ,  Sung-Kee Kim ,  Yong-Gyoo Kim ,  Si-Hai Wang ,  Chang-Hyun Lee

发明人： Do-Young Joung ,  Tae-Sung Park ,  Jae-Hoon Kwon ,  Sung-Kee Kim ,  Yong-Gyoo Kim ,  Si-Hai Wang ,  Chang-Hyun Lee

IPC分类号： H04B7/00

CPC分类号： H04N21/6131 ,  H04L1/0003 ,  H04L1/0014 ,  H04L1/0015 ,  H04N21/234381 ,  H04N21/23805 ,  H04N21/2383 ,  H04N21/2402 ,  H04N21/26216 ,  H04N21/2662 ,  H04N21/41407 ,  H04N21/6373 ,  H04N21/6379

摘要： A cross-layer optimization method for controlling a bit rate of a video coder/decoder (codec) in video data transmission for wireless devices such as a wireless broadband (WiBro) system terminal that adapts to changing transmission/reception characteristics and usage. The method typically includes checking, by a sender, radio channel state information of a sender side and a receiver side; determining, by the sender, a transmission bit rate of a video codec by using the radio channel state information of the sender side; and adjusting, by the sender, the transmission bit rate of the video codec by using the radio channel state information of the receiver side when a communication network used by a receiver typically based on the type of a communication network being used by the sender.

摘要翻译： 一种跨层优化方法，用于控制视频编码器/解码器（编解码器）在用于诸如无线宽带（WiBro）系统终端的无线设备的视频数据传输中的比特率，其适应变化的发射/接收特性和使用。 该方法通常包括由发送者检查发送方和接收方的无线电信道状态信息; 由发送方通过使用发送方的无线电信道状态信息来确定视频编解码器的传输比特率; 以及当由接收机使用的通信网络通常基于通信网络的类型由发送方使用时，通过使用接收机侧的无线电信道状态信息，由发送方调整视频编解码器的传输比特率。

公开(公告)号：US08169967B2

公开(公告)日：2012-05-01

申请号：US12050341

申请日：2008-03-18

申请人： Chang-Hyun Lee ,  Sung-Jea Ko ,  Yun-Je Oh ,  Tae-Sung Park ,  Jeong-Rok Park ,  Jeong-Seok Choi ,  Young-Hun Joo ,  Hye-Soo Kim ,  Kyung-Ho Chae

发明人： Chang-Hyun Lee ,  Sung-Jea Ko ,  Yun-Je Oh ,  Tae-Sung Park ,  Jeong-Rok Park ,  Jeong-Seok Choi ,  Young-Hun Joo ,  Hye-Soo Kim ,  Kyung-Ho Chae

IPC分类号： H04W4/00 ,  H04W36/00 ,  H04B7/216 ,  H04M11/00

CPC分类号： H04W36/30 ,  H04W36/26

摘要： A system and method for performing a handover of a mobile station (MS) by considering Quality of Service (QoS) in a broadband mobile communication system. The method can include the steps of: receiving information about one or more neighbor base stations and reception strengths for the neighbor base stations from a Serving Radio Access System (RAS) currently communicating with the MS; extracting a value of a specific field from the received information about the neighbor base stations; combining the extracted value of the specific field with the reception strengths to thereby obtain combined values, and selecting a maximum value among the combined values; and transmitting a handover (handoff) request message to a base station corresponding to the selected maximum value. The system includes an MS that analyzes information about neighbor stations received in a Mobile Neighbor Base-station Advertisement (MOB_NBR_ADV) message to select a target RAS.

摘要翻译： 一种通过考虑宽带移动通信系统中的服务质量（QoS）来执行移动台（MS）的切换的系统和方法。 该方法可以包括以下步骤：从当前与MS通信的服务无线电接入系统（RAS）接收关于一个或多个相邻基站的信息和相邻基​​站的接收强度; 从接收到的关于邻近基站的信息中提取特定字段的值; 将所提取的特定字段的值与接收强度组合，从而获得组合值，并且选择组合值中的最大值; 以及向对应于所选择的最大值的基站发送切换（切换）请求消息。 该系统包括分析在移动邻居基站广播（MOB_NBR_ADV）消息中接收的关于相邻站的信息以选择目标RAS的MS。

公开(公告)号：US08076713B2

公开(公告)日：2011-12-13

申请号：US12422862

申请日：2009-04-13

申请人： Chang-Hyun Lee ,  Kyu-Charn Park

发明人： Chang-Hyun Lee ,  Kyu-Charn Park

IPC分类号： H01L21/8247

CPC分类号： H01L27/11568 ,  H01L27/105 ,  H01L27/115 ,  H01L27/11526 ,  H01L27/11546

摘要： A non-volatile memory device includes a substrate having a first region and a second region. A first gate electrode is disposed on the first region. A multi-layered charge storage layer is interposed between the first gate electrode and the substrate, the multi-layered charge storage including a tunnel insulation, a trap insulation, and a blocking insulation layer which are sequentially stacked. A second gate electrode is placed on the substrate of the second region, the second gate electrode including a lower gate and an upper gate connected to a region of an upper surface of the lower gate. A gate insulation layer is interposed between the second gate electrode and the substrate. The first gate electrode and the upper gate of the second gate electrode comprise a same material.

摘要翻译： 非易失性存储器件包括具有第一区域和第二区域的衬底。 第一栅电极设置在第一区域上。 在第一栅电极和基板之间插入多层电荷存储层，多层电荷存储包括依次堆叠的隧道绝缘，阱绝缘和阻挡绝缘层。 第二栅极被放置在第二区域的衬底上，第二栅极包括下栅极和连接到下栅极的上表面区域的上栅极。 栅极绝缘层介于第二栅电极和衬底之间。 第二栅电极的第一栅电极和上栅极包括相同的材料。