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    Hydrogenated ring-opening metathesis polymer, resist composition comprising the same and patterning method
    71.
    发明授权
    Hydrogenated ring-opening metathesis polymer, resist composition comprising the same and patterning method 有权
    氢化开环易位聚合物，包含其的抗蚀剂组合物和图案化方法

    公开(公告)号：US07794915B2

    公开(公告)日：2010-09-14

    申请号：US11902775

    申请日：2007-09-25

    申请人： Tadahiro Sunaga ,  Yuichi Okawa ,  Takeshi Kinsho ,  Tomohiro Kobayashi

    发明人： Tadahiro Sunaga ,  Yuichi Okawa ,  Takeshi Kinsho ,  Tomohiro Kobayashi

    IPC分类号： G03F7/004 ,  G03F7/30 ,  C08F232/08

    CPC分类号： G03F7/0395 ,  C08G61/08 ,  C08G61/12 ,  C08G2261/142 ,  C08G2261/1426 ,  C08G2261/3325 ,  C08G2261/3342 ,  C08G2261/418 ,  C08G2261/72 ,  G03F7/0397 ,  Y10S430/106

    摘要： Provided is a resin having an alicyclic structure in a main chain, which is excellent in etching resistance and developing property, a resist composition for exposure with a high energy radiation using the resin, and a method for forming a pattern using the resist composition.Also provided is a hydrogenated ring-opening metathesis polymer which is comprised of alicyclic skeleton-containing structural units [A], [B] and a structural unit [C] selected from the following general formula [5] and/or [6]: wherein, e and f represent respectively an integer of 0 to 3, wherein the at least one of X1 of the general formula [1] of the structural unit [A], X2 of the general formula [3] and X3 of the general formula [4] of the structural unit [B] is —O—, and wherein the molar ratio of the structural units [A], [B] and [C] satisfies simultaneously that [A]/([B]+[C]) is from 20/80 to 98/2, ([A]+[B])/[C] is from 99/1 to 50/50, and ([A]+[C])/[B] is from 99/1 to 21/79. Also, a resist composition comprising the same and a method for forming a pattern are provided.

    摘要翻译： 本发明提供一种具有优异的耐蚀刻性和显影性的主链中具有脂环结构的树脂，使用该树脂用高能量辐射曝光的抗蚀剂组合物，以及使用该抗蚀剂组合物形成图案的方法。 还提供了一种氢化开环易位聚合物，其由含脂环骨架的结构单元[A]，[B]和选自以下通式[5]和/或[6]的结构单元[C]组成： 其中，e和f分别表示0〜3的整数，式中结构单元[A]的通式[1]的X1，通式[3]的X2和通式 结构单元[B]的[4]为-O-，其中结构单元[A]，[B]和[C]的摩尔比同时满足[A] /（[B] + [C] ）为20/80〜98/2，（[A] + [B]）/ [C]为99/1〜50/50，（[A] + [C]）/ [B] 99/1至21/79。 此外，提供了包含该抗蚀剂组合物的抗蚀剂组合物和形成图案的方法。

    Positive resist compositions and patterning process
    72.
    发明授权
    Positive resist compositions and patterning process 有权
    正极抗蚀剂组成和图案化工艺

    公开(公告)号：US07727704B2

    公开(公告)日：2010-06-01

    申请号：US11773706

    申请日：2007-07-05

    申请人： Ryosuke Taniguchi ,  Tsunehiro Nishi ,  Tomohiro Kobayashi

    发明人： Ryosuke Taniguchi ,  Tsunehiro Nishi ,  Tomohiro Kobayashi

    IPC分类号： G03F7/039 ,  G03F7/20 ,  G03F7/30 ,  G03F7/38

    CPC分类号： G03F7/0397 ,  G03F7/0046 ,  G03F7/0395 ,  G03F7/2041 ,  Y10S430/111 ,  Y10S430/12 ,  Y10S430/122 ,  Y10S430/126

    摘要： In a positive resist composition comprising (A) a resin component which becomes soluble in an alkaline developer under the action of an acid and (B) a photoacid generator, component (A) is a polymer of formula (1) wherein R1 is H, methyl or trifluoromethyl, R2 and R3 are alkyl, R4 is a monovalent hydrocarbon group, X1 is O, S or CH2CH2, X2 is O, S, CH2 or CH2CH2, n is 1 or 2, a1, a2, c, d1 and d2 each are from 0 to less than 1, b is from 0.01 to less than 1, and a1+a2+b+c+d1+d2=1. The resist composition forms a pattern with high rectangularity at an enhanced resolution when processed by ArF lithography.

    摘要翻译： 在包含（A）在酸的作用下变得可溶于碱性显影剂的树脂组分和（B）光酸产生剂的正型抗蚀剂组合物中，组分（A）是式（1）的聚合物，其中R 1是H， 甲基或三氟甲基，R2和R3是烷基，R4是一价烃基，X1是O，S或CH2CH2，X2是O，S，CH2或CH2CH2，n是1或2，a1，a2，c，d1和d2 各自为0至小于1，b为0.01至小于1，a1 + a2 + b + c + d1 + d2 = 1。 当通过ArF光刻处理时，抗蚀剂组合物以增强的分辨率形成具有高矩形性的图案。

    SEMICONDUCTOR MEMORY DEVICE
    73.
    发明申请
    SEMICONDUCTOR MEMORY DEVICE 失效
    半导体存储器件

    公开(公告)号：US20100097866A1

    公开(公告)日：2010-04-22

    申请号：US12555029

    申请日：2009-09-08

    申请人： Tomohiro Kobayashi

    发明人： Tomohiro Kobayashi

    IPC分类号： G11C7/06 ,  G11C7/02 ,  G11C7/00

    CPC分类号： G11C7/14 ,  G11C7/065 ,  G11C17/12

    摘要： A semiconductor memory device includes a memory cell array provided with a main memory cell array including a plurality of memory cells, and a dummy column including a plurality of dummy memory cells, a dummy readout current control section configured to control a current value of a dummy readout current of the dummy memory cell in such a manner that the current value becomes between the current values of the readout currents in first and second states of the memory cell, and a sense section provided with a sense amplifier configured to receive a readout current in one of the first and second states, or dummy readout current as an input, comparing these currents with each other, and outputting the currents.

    摘要翻译： 一种半导体存储器件，包括设置有包括多个存储单元的主存储单元阵列的存储单元阵列和包括多个虚拟存储单元的虚拟列，虚设读出电流控制部，被配置为控制虚拟的当前值 该虚拟存储单元的读出电流使得当前值在存储单元的第一和第二状态中的读出电流的当前值之间变化，以及设置有读出放大器的感测部分，该读出放大器被配置为接收读出电流 第一状态和第二状态之一，或虚拟读出电流作为输入，将这些电流彼此进行比较，并输出电流。

    Positive resist compositions and patterning process
    74.
    发明授权
    Positive resist compositions and patterning process 有权
    正极抗蚀剂组成和图案化工艺

    公开(公告)号：US07691561B2

    公开(公告)日：2010-04-06

    申请号：US11773656

    申请日：2007-07-05

    申请人： Ryosuke Taniguchi ,  Tsunehiro Nishi ,  Tomohiro Kobayashi

    发明人： Ryosuke Taniguchi ,  Tsunehiro Nishi ,  Tomohiro Kobayashi

    IPC分类号： G03F7/039 ,  G03F7/20 ,  G03F7/30 ,  G03F7/38

    CPC分类号： G03F7/0397 ,  Y10S430/108 ,  Y10S430/111

    摘要： In a positive resist composition comprising (A) a resin component which becomes soluble in an alkaline developer under the action of an acid and (B) a photoacid generator, component (A) is a polymer of formula (1) wherein R1 is H, methyl or trifluoromethyl, R2 and R3 are alkyl, R4 is a monovalent hydrocarbon group, X1 is O, S or CH2CH2, X2 is O, S, CH2 or CH2CH2, n is 1 or 2, a and b each are from 0.01 to less than 1, c, d1 and d2 each are from 0 to less than 1, and a+b+c+d1+d2=1. The resist composition forms a pattern with high rectangularity at an enhanced resolution when processed by ArF lithography.

    摘要翻译： 在包含（A）在酸的作用下变得可溶于碱性显影剂的树脂组分和（B）光酸产生剂的正型抗蚀剂组合物中，组分（A）是式（1）的聚合物，其中R 1是H， 甲基或三氟甲基，R 2和R 3是烷基，R 4是一价烃基，X 1是O，S或CH 2 CH 2，X 2是O，S，CH 2或CH 2 CH 2，n是1或2，a和b各自为0.01至少 1，c，d1和d2各自为0至小于1，a + b + c + d1 + d2 = 1。 当通过ArF光刻处理时，抗蚀剂组合物以增强的分辨率形成具有高矩形性的图案。

    SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND REDUNDANCY METHOD THEREOF
    76.
    发明申请
    SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND REDUNDANCY METHOD THEREOF 失效
    半导体集成电路设备及其冗余方法

    公开(公告)号：US20090010085A1

    公开(公告)日：2009-01-08

    申请号：US12165720

    申请日：2008-07-01

    申请人： Takehiko Hojo ,  Tomohiro Kobayashi ,  Tetsuya Amano

    发明人： Takehiko Hojo ,  Tomohiro Kobayashi ,  Tetsuya Amano

    IPC分类号： G11C29/00 ,  G11C17/16

    CPC分类号： G11C17/18 ,  G11C17/16 ,  G11C17/165 ,  G11C29/027 ,  G11C29/785 ,  G11C29/802

    摘要： A semiconductor integrated circuit device includes a first fuse circuit, a second fuse circuit, and a control signal generating circuit which sends a first control signal and executes program such that the resistance value of the first fuse circuit becomes greater than the resistance value of the second fuse circuit, and sends a second control signal and executes reprogram such that the resistance value of the second fuse circuit becomes greater than the resistance value of the first fuse circuit.

    摘要翻译： 半导体集成电路器件包括第一熔丝电路，第二熔丝电路和控制信号发生电路，其发送第一控制信号并执行程序，使得第一熔丝电路的电阻值变得大于第二熔丝电路的电阻值 熔丝电路，并发送第二控制信号并执行重新编程，使得第二熔丝电路的电阻值变得大于第一熔丝电路的电阻值。

    Optical disc apparatus
    77.
    发明授权
    Optical disc apparatus 失效
    光盘装置

    公开(公告)号：US07334239B2

    公开(公告)日：2008-02-19

    申请号：US11083958

    申请日：2005-03-21

    申请人： Tomohiro Kobayashi

    发明人： Tomohiro Kobayashi

    IPC分类号： G11B17/04

    CPC分类号： G11B17/05

    摘要： In an optical disc apparatus, a harsh blow sound due to collision of first stoppers of a tray and third stoppers of a main chassis when the tray reaches to a terminal position of drawing thereof is reduced. When a second stopper of the tray contacts with the front end portion of a cam slider, the front end portion of the cam slider is elastically deformed so that moving speed of the tray is largely decelerated. Consequently, the blow sound due to contact of the first stoppers of the tray and the third stoppers of the main chassis is radically reduced.

    摘要翻译： 在光盘装置中，当托盘到达其绘图的终端位置时，由于托盘的第一挡块和主底板的第三挡块的碰撞引起的剧烈的吹奏声音减少。 当托盘的第二止动件与凸轮滑块的前端部接触时，凸轮滑块的前端部弹性变形，使得托盘的移动速度大大减速。 因此，由于托盘的第一挡块和主机架的第三挡块的接触引起的吹奏声音被大幅减少。

    Polymer, resist composition and patterning process
    78.
    发明申请
    Polymer, resist composition and patterning process 有权
    聚合物，抗蚀剂组合物和图案化工艺

    公开(公告)号：US20050058938A1

    公开(公告)日：2005-03-17

    申请号：US10936753

    申请日：2004-09-09

    申请人： Seiichiro Tachibana ,  Tsunehiro Nishi ,  Tomohiro Kobayashi

    发明人： Seiichiro Tachibana ,  Tsunehiro Nishi ,  Tomohiro Kobayashi

    IPC分类号： G03C1/76 ,  G03F7/039

    CPC分类号： G03F7/0397 ,  Y10S430/111

    摘要： A polymer comprising recurring units of formulae (1) to (4) wherein R1, R3, R4 and R7 are hydrogen or methyl, R2 is an acid labile group, R5 and R6 are hydrogen or hydroxyl, and R8 is a lactone structure group and having a Mw of 1,000-50,000 is provided. A resist composition comprising the inventive polymer has a sensitivity to high-energy radiation, improved resolution and etching resistance and lends itself to lithographic micropatterning with electron beams or deep UV.

    摘要翻译： 包含式（1）至（4）的重复单元的聚合物，其中R 1，R 3，R 4和R 7为氢或甲基，R 2为酸不稳定基团，R 5和R 6是氢或羟基，R 8是内酯结构基团，其Mw为1,000-50,000。 包含本发明聚合物的抗蚀剂组合物对高能量辐射具有敏感性，改进的分辨率和耐蚀刻性，并且使其自身适用于具有电子束或深紫外线的光刻微图案。

    Address counter circuit and semiconductor memory device
    80.
    发明授权
    Address counter circuit and semiconductor memory device 失效
    地址计数器电路和半导体存储器件

    公开(公告)号：US5943292A

    公开(公告)日：1999-08-24

    申请号：US034222

    申请日：1998-03-04

    申请人： Tomohiro Kobayashi

    发明人： Tomohiro Kobayashi

    IPC分类号： G11C11/418 ,  G11C7/10 ,  G11C8/04 ,  G11C11/401 ,  G11C11/407 ,  G11C11/408 ,  G11C11/417 ,  H03K23/00 ,  G11C8/00

    CPC分类号： G11C7/1018 ,  G11C8/04

    摘要： An address counter circuit comprises a first address output circuit for outputting an input address at a first timing, an additional circuit for adding a predetermined value to the input address while the address is output from the first output circuit, a counter circuit for counting up or down the address to which the predetermined value is added by the adding circuit, and a second address output circuit for sequentially outputting addresses obtained upon count-up or count-down operation of the counter circuit after the first timing.

    摘要翻译： 地址计数器电路包括用于在第一定时输出输入地址的第一地址输出电路，用于在从第一输出电路输出地址时将预定值加到输入地址的附加电路，用于向上计数的计数器电路或 降低由加法电路添加了预定值的地址;以及第二地址输出电路，用于在第一定时之后顺序地输出在计数器电路的递增计数或倒计时操作时获得的地址。