公开(公告)号：US07495298B2

公开(公告)日：2009-02-24

申请号：US11371253

申请日：2006-03-09

申请人： Shigenori Hayashi ,  Riichiro Mitsuhashi

发明人： Shigenori Hayashi ,  Riichiro Mitsuhashi

IPC分类号： H01L29/94

CPC分类号： H01L21/823842 ,  H01L21/28097 ,  H01L21/823835 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L29/66545

摘要： A semiconductor device includes: an n-transistor including a first gate insulating film made of a high-dielectric-constant material and a first gate electrode fully silicided with a metal, the first gate insulating film and the first gate electrode being formed in this order over a semiconductor region; and a p-transistor including a second gate insulating film made of the high-dielectric-constant material and a second gate electrode fully silicided with the metal, the second gate insulating film and the second gate electrode being formed in this order over the semiconductor region. If the metal has a work function larger than a Fermi level in potential energy of electrons of silicon, a metal concentration of the second gate electrode is higher than that of the first gate electrode whereas if the metal has a work function smaller than the Fermi level of silicon, a metal concentration of the second gate electrode is lower than that of the first gate electrode.

摘要翻译： 半导体器件包括：n型晶体管，其包括由高介电常数材料制成的第一栅极绝缘膜和完全硅化金属的第一栅电极，第一栅极绝缘膜和第一栅电极按此顺序形成 在半导体区域; 以及包括由高介电常数材料制成的第二栅极绝缘膜和完全硅化金属的第二栅电极的p晶体管，第二栅极绝缘膜和第二栅电极依次形成在半导体区域上 。 如果金属具有比硅的电子势能大于费米能级的功函数，则第二栅电极的金属浓度高于第一栅电极的金属浓度，而如果金属具有小于费米能级的功函数 的硅，第二栅电极的金属浓度低于第一栅电极的金属浓度。

公开(公告)号：US07264850B1

公开(公告)日：2007-09-04

申请号：US09412510

申请日：1999-10-05

申请人： Kenji Itoh ,  Shigenori Hayashi

发明人： Kenji Itoh ,  Shigenori Hayashi

IPC分类号： B05D5/08 ,  B05D5/00 ,  B05D1/36 ,  C23C16/26 ,  C23C16/50 ,  H05H1/24 ,  H05H1/02 ,  C23C16/27 ,  C23C16/105 ,  H05H1/46

CPC分类号： G11B5/8408 ,  C23C16/26 ,  C23C16/513 ,  C23C16/545 ,  G11B5/85

摘要： A process for depositing a diamond-like carbon film, which comprises providing a means for generating a sheet-like beam-type plasma region inside a vacuum vessel for depositing the diamond-like carbon film, and depositing the film on a substrate being moved through said plasma region. Also claimed is an apparatus for fabricating a magnetic recording medium by sequentially and continuously forming a magnetic layer and a diamond-like carbon film on a polymer substrate material, which comprises at least a first vacuum vessel for forming the magnetic layer of the magnetic recording medium and a second vacuum vessel for forming the diamond-like carbon film, provided that the pressure difference between the operation pressures for the first vessel and the second vessel is set in the range of from 10−2 to 10−5 Torr.

摘要翻译： 一种用于沉积类金刚石碳膜的方法，其包括提供用于在真空容器内产生片状束型等离子体区域的装置，用于沉积类金刚石碳膜，并将膜沉积在基底上移动 所述等离子体区。 还要求保护的是一种用于通过在聚合物基底材料上依次且连续地形成磁性层和类金刚石碳膜来制造磁记录介质的装置，其至少包括用于形成磁记录介质的磁性层的第一真空容器 以及用于形成类金刚石碳膜的第二真空容器，只要第一容器和第二容器的操作压力之间的压力差设定在10 -2至10的范围内 -5乇。

公开(公告)号：US20070007564A1

公开(公告)日：2007-01-11

申请号：US11371253

申请日：2006-03-09

申请人： Shigenori Hayashi ,  Riichiro Mitsuhashi

发明人： Shigenori Hayashi ,  Riichiro Mitsuhashi

IPC分类号： H01L29/94

CPC分类号： H01L21/823842 ,  H01L21/28097 ,  H01L21/823835 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L29/66545

摘要： A semiconductor device includes: an n-transistor including a first gate insulating film made of a high-dielectric-constant material and a first gate electrode fully silicided with a metal, the first gate insulating film and the first gate electrode being formed in this order over a semiconductor region; and a p-transistor including a second gate insulating film made of the high-dielectric-constant material and a second gate electrode fully silicided with the metal, the second gate insulating film and the second gate electrode being formed in this order over the semiconductor region. If the metal has a work function larger than a Fermi level in potential energy of electrons of silicon, a metal concentration of the second gate electrode is higher than that of the first gate electrode whereas if the metal has a work function smaller than the Fermi level of silicon, a metal concentration of the second gate electrode is lower than that of the first gate electrode.

摘要翻译： 半导体器件包括：n型晶体管，其包括由高介电常数材料制成的第一栅极绝缘膜和完全硅化金属的第一栅电极，第一栅极绝缘膜和第一栅电极按此顺序形成 在半导体区域; 以及包括由高介电常数材料制成的第二栅极绝缘膜和完全硅化金属的第二栅电极的p晶体管，第二栅极绝缘膜和第二栅电极依次形成在半导体区域上 。 如果金属具有比硅的电子势能大于费米能级的功函数，则第二栅电极的金属浓度高于第一栅电极的金属浓度，而如果金属具有小于费米能级的功函数 的硅，第二栅电极的金属浓度低于第一栅电极的金属浓度。

公开(公告)号：US07083873B2

公开(公告)日：2006-08-01

申请号：US10714395

申请日：2003-11-17

申请人： Shigenori Hayashi

发明人： Shigenori Hayashi

IPC分类号： G11B5/72

CPC分类号： G11B5/72 ,  G11B5/8408 ,  Y10T428/24942 ,  Y10T428/265 ,  Y10T428/30

摘要： A magnetic recording medium having a diamond-like carbon (DLC) film added therein a Group IV element of the periodic table such as silicon, particularly in the vicinity of the boundary between the magnetic material and the formed DLC film. Since a DLC having low friction coefficient can be formed, the centerline average roughness can be reduced to 30 nm or even less. Accordingly, a magnetic recording medium improved in magnetic properties and in lubricity can be obtained.

摘要翻译： 具有类金刚石碳（DLC）薄膜的磁记录介质，其中添加了诸如硅的周期表的IV族元素，特别是在磁性材料和形成的DLC膜之间的边界附近。 由于可以形成具有低摩擦系数的DLC，因此中心线平均粗糙度可以降低到30nm甚至更小。 因此，可以获得磁性能和润滑性提高的磁记录介质。

公开(公告)号：US20060125006A1

公开(公告)日：2006-06-15

申请号：US11254727

申请日：2005-10-21

申请人： Yoshinao Harada ,  Shigenori Hayashi ,  Masaaki Niwa

发明人： Yoshinao Harada ,  Shigenori Hayashi ,  Masaaki Niwa

IPC分类号： H01L29/76

CPC分类号： H01L21/28229 ,  H01L21/28185 ,  H01L21/823807 ,  H01L21/823814 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L29/665 ,  H01L29/6659 ,  H01L29/7833

摘要： In a method for manufacturing a semiconductor device having an N-channel field effect transistor, the N-channel field effect transistor is formed by a process including the steps of forming a high dielectric constant gate insulating film on a substrate, forming a gate electrode on the high dielectric constant gate insulating film, forming an extension region by introducing N-type impurities into the substrate by using at least the gate electrode as a mask, and forming a pocket region by introducing P-type impurities under the extension region in the substrate by using at least the gate electrode as a mask. An amount of arsenic (As) that is introduced as the N-type impurities is in a range that is equal to or lower than a prescribed value that is determined based on a thickness of the high dielectric constant gate insulating film.

公开(公告)号：US20050089648A1

公开(公告)日：2005-04-28

申请号：US10978461

申请日：2004-11-02

申请人： Shunpei Yamazaki ,  Kenji Itoh ,  Shigenori Hayashi

发明人： Shunpei Yamazaki ,  Kenji Itoh ,  Shigenori Hayashi

IPC分类号： C23C16/26 ,  C23C16/509 ,  G11B5/72 ,  G11B5/74 ,  G11B5/78 ,  G11B5/82 ,  G11B5/84 ,  G11B7/24 ,  G11B11/105 ,  H05H1/24

CPC分类号： C23C16/5096 ,  C23C16/26 ,  G11B5/72 ,  G11B5/74 ,  G11B5/78 ,  G11B5/82 ,  G11B5/8408 ,  G11B7/24056 ,  G11B11/10582 ,  G11B11/10584 ,  G11B11/10586 ,  Y10S430/146

摘要： In an apparatus for fabricating a carbon coating, an object such as a magnetic recording medium is disposed on a side of an electrode connected to a high-frequency power supply. Ultrasonic vibrations are supplied to the object. Discharge is generated between the electrode connected to the high-frequency power supply and a grounded electrode to fabricate a carbon coating on the surface of the object. Also, an electrode interval is set to 6 mm or less, pressure between the electrodes is set to 15 Torr to 100 Torr, whereby high-density plasma is generated to form an ion sheath on an anode side. Therefore, a coating is fabricated on the surface of the object by bombardment of ions.

摘要翻译： 在用于制造碳涂层的装置中，诸如磁记录介质的物体设置在连接到高频电源的电极的一侧。 向对象提供超声波振动。 在连接到高频电源的电极和接地电极之间产生放电，以在物体表面上制造碳涂层。 此外，将电极间隔设定为6mm以下，将电极间的压力设定为15Torr〜100Torr，由此产生高密度等离子体，以在阳极侧形成离子鞘。 因此，通过轰击离子在物体的表面上制造涂层。

公开(公告)号：US06805941B1

公开(公告)日：2004-10-19

申请号：US09407862

申请日：1999-09-29

申请人： Shigenori Hayashi

发明人： Shigenori Hayashi

IPC分类号： G11B572

CPC分类号： G11B5/72 ,  G11B5/8408 ,  Y10T428/24942 ,  Y10T428/265 ,  Y10T428/30

摘要： A magnetic recording medium having a diamond-like carbon (DLC) film added therein a Group IV element of the periodic table such as silicon, particularly in the vicinity of the boundary between the magnetic material and the formed DLC film. Since a DLC having low friction coefficient can be formed, the centerline average roughness can be reduced to 30 nm or even less. Accordingly, a magnetic recording medium improved in magnetic properties and in lubricity can be obtained.

摘要翻译： 具有类金刚石碳（DLC）薄膜的磁记录介质，其中添加了诸如硅的周期表的IV族元素，特别是在磁性材料和形成的DLC膜之间的边界附近。 由于可以形成具有低摩擦系数的DLC，因此中心线平均粗糙度可以降低到30nm甚至更小。 因此，可以获得磁性能和润滑性提高的磁记录介质。

公开(公告)号：US06623836B1

公开(公告)日：2003-09-23

申请号：US09407861

申请日：1999-09-29

申请人： Shigenori Hayashi

发明人： Shigenori Hayashi

IPC分类号： G11B572

CPC分类号： G11B5/72 ,  G11B5/8408 ,  Y10S428/90 ,  Y10T428/24355 ,  Y10T428/265 ,  Y10T428/30

摘要： A magnetic recording medium having a diamond-like carbon (DLC) film added therein a Group IV element of the periodic table such as silicon, particularly in the vicinity of the boundary between the magnetic material and the formed DLC film. Since a DLC having low friction coefficient can be formed, the centerline average roughness can be reduced to 30 nm or even less. Accordingly, a magnetic recording medium improved in magnetic properties and in lubricity can be obtained.

摘要翻译： 具有类金刚石碳（DLC）薄膜的磁记录介质，其中添加了诸如硅的周期表的IV族元素，特别是在磁性材料和形成的DLC膜之间的边界附近。 由于可以形成具有低摩擦系数的DLC，因此中心线平均粗糙度可以降低到30nm甚至更小。 因此，可以获得磁性能和润滑性提高的磁记录介质。

公开(公告)号：US06194047B1

公开(公告)日：2001-02-27

申请号：US08920719

申请日：1997-08-29

申请人： Shigenori Hayashi

发明人： Shigenori Hayashi

IPC分类号： G11B566

CPC分类号： G11B5/72 ,  G11B5/8408 ,  Y10S428/90 ,  Y10T428/24355 ,  Y10T428/265 ,  Y10T428/30

摘要： A magnetic recording medium having a diamond-like carbon (DLC) film added therein a Group IV element of the periodic table such as silicon, particularly in the vicinity of the boundary between the magnetic material and the formed DLC film. Since a DLC having low friction coefficient can be formed, the centerline average roughness can be reduced to 30 nm or even less. Accordingly, a magnetic recording medium improved in magnetic properties and in lubricity can be obtained.

公开(公告)号：US06183816B2

公开(公告)日：2001-02-06

申请号：US08998008

申请日：1997-08-13

申请人： Shunpei Yamazaki ,  Kenji Itoh ,  Shigenori Hayashi

发明人： Shunpei Yamazaki ,  Kenji Itoh ,  Shigenori Hayashi

IPC分类号： C23C1650

CPC分类号： C23C16/26 ,  C23C16/5096 ,  C23C16/545 ,  G11B5/72 ,  G11B5/74 ,  G11B5/78 ,  G11B5/82 ,  G11B5/8408 ,  G11B11/10582 ,  G11B11/10584 ,  G11B11/10586 ,  Y10S427/104 ,  Y10S428/90 ,  Y10S428/913 ,  Y10S430/146 ,  Y10T428/12729 ,  Y10T428/21

摘要： In an apparatus for fabricating a carbon coating, an object such as a magnetic recording medium is disposed on a side of an electrode connected to a high-frequency power supply. Ultrasonic vibrations are supplied to the object. Discharge is generated between the electrode connected to the high-frequency power supply and a grounded electrode to fabricate a carbon coating on the surface of the object. Also, an electrode interval is set to 6 mm or less, pressure between the electrodes is set to 15 Torr to 100 Torr, whereby high-density plasma is generated to form an ion sheath on an anode side. Therefore, a coating is fabricated on the surface of the object by bombardment of ions.

摘要翻译： 在用于制造碳涂层的装置中，诸如磁记录介质的物体设置在连接到高频电源的电极的一侧。 向对象提供超声波振动。 在连接到高频电源的电极和接地电极之间产生放电，以在物体表面上制造碳涂层。 此外，将电极间隔设定为6mm以下，将电极间的压力设定为15Torr〜100Torr，由此产生高密度等离子体，以在阳极侧形成离子鞘。 因此，通过轰击离子在物体的表面上制造涂层。