利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

92 条记录 (耗时 0.032 秒)

    Semiconductor device having a field effect transistor using a high dielectric constant gate insulating film and manufacturing method of the same
    1.
    发明授权
    Semiconductor device having a field effect transistor using a high dielectric constant gate insulating film and manufacturing method of the same 有权
    具有使用高介电常数栅极绝缘膜的场效应晶体管的半导体器件及其制造方法

    公开(公告)号：US07956413B2

    公开(公告)日：2011-06-07

    申请号：US12478252

    申请日：2009-06-04

    申请人： Yoshinao Harada ,  Shigenori Hayashi ,  Masaaki Niwa

    发明人： Yoshinao Harada ,  Shigenori Hayashi ,  Masaaki Niwa

    IPC分类号： H01L29/94

    CPC分类号： H01L21/28229 ,  H01L21/28185 ,  H01L21/823807 ,  H01L21/823814 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L29/665 ,  H01L29/6659 ,  H01L29/7833

    摘要： In a method for manufacturing a semiconductor device having an N-channel field effect transistor, the N-channel field effect transistor is formed by a process including the steps of forming a high dielectric constant gate insulating film on a substrate, forming a gate electrode on the high dielectric constant gate insulating film, forming an extension region by introducing N-type impurities into the substrate by using at least the gate electrode as a mask, and forming a pocket region by introducing P-type impurities under the extension region in the substrate by using at least the gate electrode as a mask. An amount of arsenic (As) that is introduced as the N-type impurities is in a range that is equal to or lower than a prescribed value that is determined based on a thickness of the high dielectric constant gate insulating film.

    摘要翻译： 在制造具有N沟道场效应晶体管的半导体器件的方法中，N沟道场效应晶体管通过以下步骤形成，该方法包括以下步骤：在衬底上形成高介电常数栅极绝缘膜，形成栅电极 高介电常数栅极绝缘膜，通过至少使用栅电极作为掩模，将N型杂质引入基板，形成延伸区域，并通过在基板的延伸区域内引入P型杂质形成袋区域 至少使用栅电极作为掩模。 作为N型杂质而引入的砷（As）的量在等于或低于基于高介电常数栅极绝缘膜的厚度确定的规定值的范围内。

    Semiconductor device having a field effect transistor using a high dielectric constant gate insulating film and manufacturing method of the same
    2.
    发明授权
    Semiconductor device having a field effect transistor using a high dielectric constant gate insulating film and manufacturing method of the same 失效
    具有使用高介电常数栅极绝缘膜的场效应晶体管的半导体器件及其制造方法

    公开(公告)号：US07554156B2

    公开(公告)日：2009-06-30

    申请号：US11254727

    申请日：2005-10-21

    申请人： Yoshinao Harada ,  Shigenori Hayashi ,  Masaaki Niwa

    发明人： Yoshinao Harada ,  Shigenori Hayashi ,  Masaaki Niwa

    IPC分类号： H01L27/088

    CPC分类号： H01L21/28229 ,  H01L21/28185 ,  H01L21/823807 ,  H01L21/823814 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L29/665 ,  H01L29/6659 ,  H01L29/7833

    摘要： In a method for manufacturing a semiconductor device having an N-channel field effect transistor, the N-channel field effect transistor is formed by a process including the steps of forming a high dielectric constant gate insulating film on a substrate, forming a gate electrode on the high dielectric constant gate insulating film, forming an extension region by introducing N-type impurities into the substrate by using at least the gate electrode as a mask, and forming a pocket region by introducing P-type impurities under the extension region in the substrate by using at least the gate electrode as a mask. An amount of arsenic (As) that is introduced as the N-type impurities is in a range that is equal to or lower than a prescribed value that is determined based on a thickness of the high dielectric constant gate insulating film.

    摘要翻译： 在制造具有N沟道场效应晶体管的半导体器件的方法中，N沟道场效应晶体管通过以下步骤形成，该方法包括以下步骤：在衬底上形成高介电常数栅极绝缘膜，形成栅电极 高介电常数栅极绝缘膜，通过至少使用栅电极作为掩模，将N型杂质引入基板，形成延伸区域，并通过在基板的延伸区域内引入P型杂质形成袋区域 至少使用栅电极作为掩模。 作为N型杂质而引入的砷（As）的量在等于或低于基于高介电常数栅极绝缘膜的厚度确定的规定值的范围内。

    SEMICONDUCTOR DEVICE HAVING A FIELD EFFECT TRANSISTOR USING A HIGH DIELECTRIC CONSTANT GATE INSULATING FILM AND MANUFACTURING METHOD OF THE SAME
    3.
    发明申请
    SEMICONDUCTOR DEVICE HAVING A FIELD EFFECT TRANSISTOR USING A HIGH DIELECTRIC CONSTANT GATE INSULATING FILM AND MANUFACTURING METHOD OF THE SAME 有权
    具有高介电常数栅绝缘膜的场效应晶体管的半导体器件及其制造方法

    公开(公告)号：US20090242983A1

    公开(公告)日：2009-10-01

    申请号：US12478252

    申请日：2009-06-04

    申请人： Yoshinao HARADA ,  Shigenori Hayashi ,  Masaaki Niwa

    发明人： Yoshinao HARADA ,  Shigenori Hayashi ,  Masaaki Niwa

    IPC分类号： H01L29/78

    CPC分类号： H01L21/28229 ,  H01L21/28185 ,  H01L21/823807 ,  H01L21/823814 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L29/665 ,  H01L29/6659 ,  H01L29/7833

    摘要： In a method for manufacturing a semiconductor device having an N-channel field effect transistor, the N-channel field effect transistor is formed by a process including the steps of forming a high dielectric constant gate insulating film on a substrate, forming a gate electrode on the high dielectric constant gate insulating film, forming an extension region by introducing N-type impurities into the substrate by using at least the gate electrode as a mask, and forming a pocket region by introducing P-type impurities under the extension region in the substrate by using at least the gate electrode as a mask. An amount of arsenic (As) that is introduced as the N-type impurities is in a range that is equal to or lower than a prescribed value that is determined based on a thickness of the high dielectric constant gate insulating film.

    摘要翻译： 在制造具有N沟道场效应晶体管的半导体器件的方法中，N沟道场效应晶体管通过以下步骤形成，该方法包括以下步骤：在衬底上形成高介电常数栅极绝缘膜，形成栅电极 高介电常数栅极绝缘膜，通过至少使用栅电极作为掩模，将N型杂质引入基板，形成延伸区域，并通过在基板的延伸区域内引入P型杂质形成袋区域 至少使用栅电极作为掩模。 作为N型杂质而引入的砷（As）的量在等于或低于基于高介电常数栅极绝缘膜的厚度确定的规定值的范围内。

    Apparatus for fabricating coating and method of fabricating the coating
    6.
    发明授权
    Apparatus for fabricating coating and method of fabricating the coating 失效
    用于制造涂层的装置和制造涂层的方法

    公开(公告)号：US06835523B1

    公开(公告)日：2004-12-28

    申请号：US09396381

    申请日：1999-09-15

    申请人： Shunpei Yamazaki ,  Kenji Itoh ,  Shigenori Hayashi

    发明人： Shunpei Yamazaki ,  Kenji Itoh ,  Shigenori Hayashi

    IPC分类号： G11B724

    CPC分类号： C23C16/5096 ,  C23C16/26 ,  G11B5/72 ,  G11B5/74 ,  G11B5/78 ,  G11B5/82 ,  G11B5/8408 ,  G11B7/24056 ,  G11B11/10582 ,  G11B11/10584 ,  G11B11/10586 ,  Y10S430/146

    摘要： In an apparatus for fabricating a carbon coating, an object such as a magnetic r cording medium is disposed on a side of an electrode connected to a high-frequency power supply. Ultrasonic vibrations are supplied to the object. Discharge is generated between the electrode connected to the high-frequency power supply and a grounded electrode to fabricate a carbon coating on the surface of the object. Also, an electrode interval is set to 6 mm or less, pressure between the electrodes is set to 15 Torr to 100 Torr, whereby high-density plasma is generated to form an ion sheath on an anode side. Therefore, a coating is fabricated on the surface of the object by bombardment of ions.

    摘要翻译： 在用于制造碳涂层的装置中，诸如磁性介质的物体设置在连接到高频电源的电极的一侧。 向对象提供超声波振动。 在连接到高频电源的电极和接地电极之间产生放电，以在物体表面上制造碳涂层。 此外，将电极间隔设定为6mm以下，将电极间的压力设定为15Torr〜100Torr，由此产生高密度等离子体，以在阳极侧形成离子鞘。 因此，通过轰击离子在物体的表面上制造涂层。

    Method of manufacturing a thin film sensor element
    8.
    发明授权
    Method of manufacturing a thin film sensor element 失效
    制造薄膜传感器元件的方法

    公开(公告)号：US6105225A

    公开(公告)日：2000-08-22

    申请号：US600863

    申请日：1996-02-09

    申请人： Hideo Torii ,  Takeshi Kamada ,  Shigenori Hayashi ,  Ryoichi Takayama ,  Takashi Hirao ,  Masumi Hattori

    发明人： Hideo Torii ,  Takeshi Kamada ,  Shigenori Hayashi ,  Ryoichi Takayama ,  Takashi Hirao ,  Masumi Hattori

    IPC分类号： G01P15/08 ,  G01P15/09 ,  H01L41/29 ,  H01L41/22

    CPC分类号： G01P15/0922 ,  G01P15/0802 ,  H01L41/0478 ,  H01L41/0815 ,  H01L41/313 ,  Y10T29/42 ,  Y10T29/4981

    摘要： A method of manufacturing a small, light, highly accurate and inexpensive thin film sensor element is disclosed. The thin film sensor element comprises a sensor holding substrate having an opening part and a multilayer film structure adhered thereon. The multilayer film structure comprises a first electrode film, a second electrode film, and a piezoelectric dielectric oxide film present between the first and second electrode films. The method of manufacturing the thin film sensor element comprises the steps of: forming the multilayer film structure by forming the first electrode film having a (100) plane orientation on a surface of an alkali halide substrate, forming the piezoelectric dielectric oxide thereon, and forming the second electrode film on the piezoelectric dielectric oxide; adhering the multilayer film structure on the surface of the sensor holding substrate having the opening part; and dissolving and removing the alkali halide substrate with water.

    摘要翻译： 公开了一种制造小型，轻型，高精度和廉价的薄膜传感器元件的方法。 薄膜传感器元件包括具有开口部分和粘附在其上的多层膜结构的传感器保持基板。 多层膜结构包括第一电极膜，第二电极膜和存在于第一和第二电极膜之间的压电电介质氧化物膜。 制造薄膜传感器元件的方法包括以下步骤：通过在碱金属卤化物衬底的表面上形成具有（100）面取向的第一电极膜来形成多层膜结构，在其上形成压电电介质氧化物，并形成 压电电介质氧化物上的第二电极膜; 将多层膜结构粘附在具有开口部的传感器保持基板的表面上; 并用水溶解和除去碱金属卤化物基质。