摘要:
The photosensitive resin composition comprising: (A) a resin containing (A1) a repeating unit having at least two groups represented by the specific general formula; and (B) a compound capable of generating an acid by the action with one of an actinic ray and a radiation.
摘要:
A resist composition comprising (A) an acid generator represented by formula (1): wherein S1 to S8 each independently represents a substituent; a, n, m, l, k, o, p, q and r each independently represents an integer of 0 to 2; X represents a single bond or a divalent linking group; R1 and R2 each independently represents a hydrogen atom or a substituent, and R1 and R2 may combine with each other to represent a single bond or a divalent linking group; and Y− and Z− each independently represents an organic sulfonate anion.
摘要翻译:一种抗蚀剂组合物,其包含(A)由式(1)表示的酸发生剂:其中S 1至S 8各自独立地表示取代基; a,n,m,l,k,o,p,q和r各自独立地表示0〜2的整数。 X表示单键或二价连接基团; R 1和R 2各自独立地表示氢原子或取代基,R 1和R 2可以 彼此结合以表示单键或二价连接基团; 和Y - Z - 各自独立地表示有机磺酸根阴离子。
摘要:
The resist composition of the present invention, ensuring excellent pattern profile and excellent isolation performance for use in the pattern formation by the irradiation of actinic rays or radiation, particularly, electron beam, X ray or EUV light, which comprising (A) a compound having a specific partial structure and a counter ion, the compound generating an acid upon irradiation of actinic rays or radiation.
摘要:
A positive resist composition for use with an electron beam, an EUV light or an X ray, the positive resist composition comprising: (A) at least one compound that generates an acid upon treatment with one of an actinic ray and radiation; and (B) a resin that increases a solubility of the resin (B) in an alkaline developer by an action of an acid, wherein the resin (B) comprises a repeating unit having an alicyclic group connected with a fluorine-substituted alcohol residue; and a pattern formation method using the composition.
摘要:
A positive resist composition which can be suitably used in an ultramicrolithography process such as production of VLSI or high-capacity microchip and in other photofabrication processes and can ensure good sensitivity, resolution, pattern profile and line edge roughness when irradiated with actinic rays or radiation, particularly, electron beam, X-ray or EUV; and a pattern formation method using the composition, are provided, the positive resist composition comprising (A) a resin comprising a specific acryl-based repeating unit and a specific styrene-based repeating unit, which increases the dissolution rate in an alkali developer by the action of an acid, (B) a compound capable of generating an acid upon irradiation with actinic rays or radiation, and (C) a solvent; and a pattern formation method using the composition.
摘要:
A negative type resist composition comprising: (A1) a compound generating a sulfonic acid upon irradiation with actinic rays or a radiation and having the specific formula, (A2) a compound generating a sulfonic acid upon irradiation with actinic rays or a radiation and having the specific structure, (B) an alkali-soluble resin, and (C) a crosslinking agent capable of carrying out an addition reaction with the alkali-soluble resin which is the component (B) by the action of an acid.
摘要:
A positive photoresist composition comprising (a) an acid-decomposable polysiloxane having a structural unit represented by formula (IV): wherein Z′ is a phenyl ring substituted with an acid-decomposable group and (b) a compound which decomposes upon exposure to generate an acid.
摘要:
A light-sensitive composition comprising:(a) a polysiloxane compound having at least 1 mol % of a structural unit derived from a product of a thermal cycloaddition reaction between a compound of formula (I), (II), (III) or (IV) and a compound of formula (V), (VI), (VII) or (VIII), and(b) an orthoquinonediazide compound. ##STR1##
摘要:
A light-sensitive composition comprising:(a) a polysiloxane compound having at least 1 mol % of a structural unit derived from a product of a thermal cycloaddition reaction between a compound of formula (I), (II), (III) or (IV) and a compound of formula (V), (VI), (VII) or (VIII), and(b) an onium salt compound. ##STR1##
摘要:
A pattern forming method comprising a step of applying a resist composition whose solubility in a negative tone developer decreases upon irradiation with an actinic ray or radiation and which contains a resin having an alicyclic hydrocarbon structure and a dispersity of 1.7 or less and being capable of increasing the polarity by the action of an acid, an exposure step, and a development step using a negative tone developer; a resist composition for use in the method; and a developer and a rinsing solution for use in the method, are provided, whereby a pattern with reduced line edge roughness and high dimensional uniformity can be formed.