-
公开(公告)号：US08385762B2
公开(公告)日：2013-02-26
申请号：US12461905
申请日：2009-08-27
CPC分类号： G03G15/1605 , G03G15/0194 , G03G15/657
摘要： A transfer roller lies opposite to a supporting roller across an image carrying belt and abuts against the outer surface of the image carrying belt to form a transfer nip. A driving force transmission unit transmits driving force from a driving source to a driving roller. A drive control unit performs drive control of the driving source. A feedforward control unit performs feedforward control on the driving source via the drive control unit. An entry detecting unit detects entry of a sheet in the transfer nip. The feedforward control unit considers an entry detection signal output by the entry sensor as a trigger for performing feedforward control after a predetermined time.
摘要翻译： 转印辊与支撑辊相对，穿过图像承载带并抵靠图像承载带的外表面以形成转印辊隙。 驱动力传递单元将来自驱动源的驱动力传递到驱动辊。 驱动控制单元执行驱动源的驱动控制。 前馈控制单元通过驱动控制单元对驱动源进行前馈控制。 入口检测单元检测转印辊隙中纸张的进入。 前馈控制单元将入口传感器输出的入口检测信号视为在预定时间之后执行前馈控制的触发。
-
公开(公告)号：US20120306051A1
公开(公告)日：2012-12-06
申请号：US13587008
申请日：2012-08-16
IPC分类号： H01L27/08
CPC分类号： H01L28/60 , H01L27/0629 , H01L27/0805 , H01L27/105 , H01L27/10805 , H01L27/11526 , H01L27/11531 , H01L27/11573 , H01L28/40
摘要： In connection with a semiconductor device including a capacitor element there is provided a technique capable of improving the reliability of the capacitor element. A capacitor element is formed in an element isolation region formed over a semiconductor substrate. The capacitor element includes a lower electrode and an upper electrode formed over the lower electrode through a capacitor insulating film. Basically, the lower electrode and the upper electrode are formed from polysilicon films and a cobalt silicide film formed over the surfaces of the polysilicon films. End portions of the cobalt silicide film formed over the upper electrode are spaced apart a distance from end portions of the upper electrode. Besides, end portions of the cobalt silicide film formed over the lower electrode are spaced apart a distance from boundaries between the upper electrode and the lower electrode.
摘要翻译： 关于包括电容器元件的半导体器件，提供了一种能够提高电容器元件的可靠性的技术。 电容器元件形成在半导体衬底上形成的元件隔离区域中。 电容器元件包括通过电容器绝缘膜形成在下电极上的下电极和上电极。 基本上，下电极和上电极由形成在多晶硅膜的表面上的多晶硅膜和硅化钴膜形成。 形成在上电极上的钴硅化物膜的端部与上电极的端部间隔开一定距离。 此外，形成在下电极上的钴硅化物膜的端部与上电极和下电极之间的边界间隔一定距离。
-
73.发明授权公开(公告)号：US08309876B2
公开(公告)日：2012-11-13
申请号：US12865655
申请日：2008-01-31
IPC分类号： B23H1/00
CPC分类号： B23H1/022
摘要： In a waveform of switching signals, which is output from a full-bridge circuit formed of four switching elements, includes a normal polarity pulse group and a reversed polarity pulse group for controlling an output timing of voltage pulses. A duty cycle of the normal polarity pulse group containing a plurality of normal polarity pulses, which apply a positive power-supply polarity to a workpiece and apply a negative power-supply polarity to a machining-purpose electrode, is configured so as to be different from a duty cycle of the reversed polarity pulse group containing a plurality of reversed polarity pulses, which apply a negative power-supply polarity to the workpiece and apply a positive power-supply polarity to the machining-purpose electrode.
摘要翻译： 在从由四个开关元件构成的全桥电路输出的开关信号的波形中，包括用于控制电压脉冲的输出定时的正极性脉冲组和反极性脉冲组。 将包含对工件施加正电源极性并向加工用电极施加负电源极性的多个正常极性脉冲的正常极性脉冲群的占空比构成为不同 从包含多个反极性脉冲的反极性脉冲组的占空比，向工件施加负电源极性，并向加工用电极施加正电源极性。
-
公开(公告)号：US08278169B2
公开(公告)日：2012-10-02
申请号：US12885086
申请日：2010-09-17
IPC分类号： H01L21/336
CPC分类号： H01L27/115 , H01L21/28282 , H01L27/11568 , H01L29/42344 , H01L29/792
摘要： The present invention provides a technology capable of reducing an area occupied by a nonvolatile memory while improving the reliability of the nonvolatile memory. In a semiconductor device, the structure of a code flash memory cell is differentiated from that of a data flash memory cell. More specifically, in the code flash memory cell, a memory gate electrode is formed only over the side surface on one side of a control gate electrode to improve a reading speed. In the data flash memory cell, on the other hand, a memory gate electrode is formed over the side surfaces on both sides of a control gate electrode. By using a multivalued memory cell instead of a binary memory cell, the resulting data flash memory cell can have improved reliability while preventing deterioration of retention properties and reduce its area.
摘要翻译： 本发明提供一种能够在提高非易失性存储器的可靠性的同时减少由非易失性存储器占据的面积的技术。 在半导体器件中，代码闪存单元的结构与数据闪存单元的结构不同。 更具体地，在代码闪速存储单元中，仅在控制栅电极的一侧的侧面上形成存储栅电极，以提高读取速度。 另一方面，在数据闪存单元中，在控制栅电极的两侧的侧面上形成存储栅电极。 通过使用多值存储单元而不是二进制存储单元，所得到的数据闪存单元可以提高可靠性，同时防止保留性能的劣化并减小其面积。
-
公开(公告)号：US08269266B2
公开(公告)日：2012-09-18
申请号：US12825147
申请日：2010-06-28
申请人： Koichi Toba , Yasushi Ishii , Yoshiyuki Kawashima , Satoru Machida , Munekatsu Nakagawa , Takashi Hashimoto
发明人： Koichi Toba , Yasushi Ishii , Yoshiyuki Kawashima , Satoru Machida , Munekatsu Nakagawa , Takashi Hashimoto
IPC分类号： H01L27/115
CPC分类号： H01L29/7885 , H01L21/28282 , H01L27/115 , H01L27/11521 , H01L29/42324 , H01L29/42328
摘要： Provided is a semiconductor device having, over a semiconductor substrate, a control gate electrode and a memory gate electrode which are adjacent to each other and constitute a nonvolatile memory. The height of the memory gate electrode is lower than the height of the control gate electrode. A metal silicide film is formed over the upper surface of the control gate electrode, but not formed over the upper surface of the memory gate electrode. The memory gate electrode has, over the upper surface thereof, a sidewall insulating film made of silicon oxide. This sidewall insulating film is formed in the same step as that for the formation of respective sidewall insulating films over the sidewalls of the memory gate electrode and the control gate electrode. The present invention makes it possible to improve the production yield and performance of the semiconductor device having a nonvolatile memory.
摘要翻译： 提供了一种在半导体衬底上具有彼此相邻并构成非易失性存储器的控制栅电极和存储栅电极的半导体器件。 存储栅电极的高度低于控制栅电极的高度。 在控制栅电极的上表面上形成金属硅化物膜，但不形成在存储栅电极的上表面上。 存储栅电极在其上表面上具有由氧化硅制成的侧壁绝缘膜。 该侧壁绝缘膜以与用于在存储栅电极和控制栅电极的侧壁上形成各个侧壁绝缘膜的步骤相同的步骤形成。 本发明使得可以提高具有非易失性存储器的半导体器件的生产率和性能。
-
公开(公告)号：US08254811B2
公开(公告)日：2012-08-28
申请号：US12379505
申请日：2009-02-24
申请人： Toshiyuki Andoh , Takashi Hashimoto , Takashi Hodoshima , Hidetaka Noguchi , Seiji Hoshino , Tatsuhiko Oikawa , Tetsuo Watanabe
发明人： Toshiyuki Andoh , Takashi Hashimoto , Takashi Hodoshima , Hidetaka Noguchi , Seiji Hoshino , Tatsuhiko Oikawa , Tetsuo Watanabe
CPC分类号： G03G15/0131 , G03G15/1605 , G03G15/161 , G03G2215/00738 , G03G2215/0154 , G03G2215/0158
摘要： An image-carrier driving unit drives an image carrier. An image forming unit forms an image on the image carrier. A moving-member driving unit drives a moving member that is movable towards and away from the image carrier. A detecting unit detects a position of the moving member at predetermined sampling times while the moving member is moving. A movement control unit performs a feedback control on the moving-member driving unit such that a detection result of the detecting unit follows a target value corresponding to each of the predetermined sampling times when the moving member moves while the image forming unit is forming the image on the image carrier.
摘要翻译： 图像载体驱动单元驱动图像载体。 图像形成单元在图像载体上形成图像。 移动构件驱动单元驱动能够朝向和远离图像载体移动的移动构件。 检测单元在移动构件移动时以预定的采样次数检测移动构件的位置。 移动控制单元对移动构件驱动单元执行反馈控制，使得当图像形成单元正在形成图像时，检测单元的检测结果遵循与移动构件移动时的每个预定采样次数相对应的目标值 在图像载体上。
-
公开(公告)号：US20120132978A1
公开(公告)日：2012-05-31
申请号：US13302184
申请日：2011-11-22
申请人： Koichi TOBA , Yasushi Ishi , Hiraku Chakihara , Kota Funayama , Yoshiyuki Kawashima , Takashi Hashimoto
发明人： Koichi TOBA , Yasushi Ishi , Hiraku Chakihara , Kota Funayama , Yoshiyuki Kawashima , Takashi Hashimoto
IPC分类号： H01L29/788 , H01L21/28 , H01L21/336
CPC分类号： H01L27/11568 , H01L21/28282 , H01L27/11573 , H01L29/42344 , H01L29/792
摘要： A semiconductor device with a nonvolatile memory is provided which has improved characteristics. The semiconductor device includes a control gate electrode, a memory gate electrode disposed adjacent to the control gate electrode, a first insulating film, and a second insulating film including therein a charge storing portion. Among these components, the memory gate electrode is formed of a silicon film including a first silicon region positioned over the second insulating film, and a second silicon region positioned above the first silicon region. The second silicon region contains p-type impurities, and the concentration of p-type impurities of the first silicon region is lower than that of the p-type impurities of the second silicon region.
摘要翻译： 提供了具有非易失性存储器的半导体器件，其具有改进的特性。 半导体器件包括控制栅极电极，与控制栅电极相邻设置的存储栅电极，第一绝缘膜和包括电荷存储部分的第二绝缘膜。 在这些部件中，存储栅电极由包括位于第二绝缘膜上的第一硅区的硅膜和位于第一硅区之上的第二硅区构成。 第二硅区域含有p型杂质，第一硅区域的p型杂质浓度低于第二硅区域的p型杂质浓度。
-
公开(公告)号：US08131173B2
公开(公告)日：2012-03-06
申请号：US12314312
申请日：2008-12-08
申请人： Hidetaka Noguchi , Toshiyuki Andoh , Takashi Hodoshima , Seiji Hoshino , Tatsuhiko Oikawa , Takashi Hashimoto
发明人： Hidetaka Noguchi , Toshiyuki Andoh , Takashi Hodoshima , Seiji Hoshino , Tatsuhiko Oikawa , Takashi Hashimoto
CPC分类号： G03G15/2064 , G03G15/161 , G03G15/5004 , G03G2221/1657
摘要： A driving apparatus includes a driving unit, a driven unit driven by the driving unit, a driving control unit configured to control the driving unit by performing feed-forward control based on feed-forward target data determined in advance to reduce a speed change of the driven unit. The speed change of the driven unit is expressed substantially as a positive half cycle of a sinusoidal waveform having an amplitude and a time duration, and the feed-forward target data is calculated from the amplitude and the time duration to represent a rectangular waveform approximating the positive half cycle of the sinusoidal waveform.
摘要翻译： 驱动装置包括：驱动单元，由驱动单元驱动的从动单元;驱动控制单元，被配置为通过基于预先确定的前馈目标数据执行前馈控制来控制驱动单元，以减少驱动单元的速度变化 驱动单元。 驱动单元的速度变化基本上表示为具有振幅和持续时间的正弦波形的正半周期，并且从振幅和持续时间计算前馈目标数据，以表示近似于 正弦波形的正半周期。
-
公开(公告)号：US08054680B2
公开(公告)日：2011-11-08
申请号：US10852150
申请日：2004-05-25
IPC分类号： G11C11/34 , G11C7/00 , H01L29/792
CPC分类号： G11C16/107 , G11C16/3468
摘要： Memory cells in which an erase and write operation is performed by injecting electrons from a substrate and extracting the electrons into a gate electrode constitute a semiconductor nonvolatile memory device. That is a gate extraction semiconductor nonvolatile memory device. In that device, if an erase bias is applied in a first process of an erase and write operation, memory cells in an overerase condition occur and the charge retention characteristics of such memory cells are degraded. The present invention provides a semiconductor nonvolatile memory device using means for writing all the memory cells in an erase unit before applying the erase bias, and then applying the erase bias.
摘要翻译： 通过从基板注入电子并将电子提取到栅极电极进行擦除和写入操作的存储单元构成半导体非易失性存储器件。 这是一个栅极提取半导体非易失性存储器件。 在该器件中，如果在擦除和写入操作的第一过程中施加擦除偏置，则发生过度过热状态的存储器单元，并且这种存储器单元的电荷保留特性降低。 本发明提供一种半导体非易失性存储器件，其使用在施加擦除偏置之前将所有存储单元写入擦除单元的装置，然后施加擦除偏置。
-
80.发明申请公开(公告)号：US20110235716A1
公开(公告)日：2011-09-29
申请号：US13121041
申请日：2010-10-07
IPC分类号： H04N7/26
CPC分类号： H04N19/433 , H04N19/44
摘要： A decoding apparatus (100) includes: a first memory unit (20) storing pixel data of a decoded reference image to be referred to in decoding; a second memory unit (30) having a storage capacity smaller than that of the first memory unit (20) and providing a data reading speed faster than that provided by the first memory unit (20); a search area transfer unit (40) transferring, from the first memory unit (20) to the second memory unit (30), pixel data in a search area that is a part of the reference image and required to calculate a motion vector for the block; a motion vector operating unit (50) calculating the motion vector by repeatedly (i) reading out, from the second memory unit (30), the pixel data and (ii) performing a predetermined operation on the pixel data; and a decoding unit (60) decoding the block using the calculated motion vector.
摘要翻译： 解码装置（100）包括：第一存储单元，存储解码中要参考的解码参考图像的像素数据; 具有比第一存储单元（20）的存储容量小的存储容量的第二存储器单元（30），并且提供比由第一存储器单元（20）提供的数据读取速度更快的数据读取速度; 搜索区域传送单元，从第一存储单元（20）向第二存储单元（30）传送作为参考图像的一部分的搜索区域中的像素数据，并且需要计算用于 块; 运动矢量运算单元，通过重复地（i）从第二存储器单元（30）读出像素数据和（ii）对像素数据执行预定的操作来计算运动矢量; 以及解码单元（60），使用所计算的运动矢量对该块进行解码。
-
-
-
-
-
-
-
-
-
搜索结果
363 条记录 (耗时 0.04 秒)
