公开(公告)号：US07947610B2

公开(公告)日：2011-05-24

申请号：US12471830

申请日：2009-05-26

申请人： Yoshitaka Tsunashima ,  Seiji Inumiya ,  Yasumasa Suizu ,  Yoshio Ozawa ,  Kiyotaka Miyano ,  Masayuki Tanaka

发明人： Yoshitaka Tsunashima ,  Seiji Inumiya ,  Yasumasa Suizu ,  Yoshio Ozawa ,  Kiyotaka Miyano ,  Masayuki Tanaka

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： H01L21/82345 ,  H01L21/28088 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/28211 ,  H01L21/31604 ,  H01L21/823462 ,  H01L21/823475 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L29/66545 ,  H01L29/6656

摘要： Claimed and disclosed is a semiconductor device including a transistor having a gate insulating film structure containing nitrogen or fluorine in a compound, such as metal silicate, containing metal, silicon and oxygen, a gate insulating film structure having a laminated structure of an amorphous metal oxide film and metal silicate film, or a gate insulating film structure having a first gate insulating film including an oxide film of a first metal element and a second gate insulating film including a metal silicate film of a second metal element.

摘要翻译： 权利要求和公开的是一种半导体器件，包括具有在包含金属，硅和氧的金属硅酸盐的化合物中含有氮或氟的栅极绝缘膜结构的晶体管，具有非晶态金属氧化物层叠结构的栅极绝缘膜结构 膜和金属硅酸盐膜，或具有包括第一金属元素的氧化物膜的第一栅极绝缘膜和包括第二金属元素的金属硅酸盐膜的第二栅极绝缘膜的栅极绝缘膜结构。

公开(公告)号：US20100197130A1

公开(公告)日：2010-08-05

申请号：US12755532

申请日：2010-04-07

申请人： Yoshio OZAWA ,  Isao Kamioka ,  Junichi Shiozawa ,  Akihito Yamamoto ,  Ryota Fujitsuka ,  Yoshihiro Ogawa ,  Katsuaki Natori ,  Katsuyuki Sekine ,  Masayuki Tanaka ,  Daisuke Nishida

发明人： Yoshio OZAWA ,  Isao Kamioka ,  Junichi Shiozawa ,  Akihito Yamamoto ,  Ryota Fujitsuka ,  Yoshihiro Ogawa ,  Katsuaki Natori ,  Katsuyuki Sekine ,  Masayuki Tanaka ,  Daisuke Nishida

IPC分类号： H01L21/336 ,  H01L21/28

CPC分类号： H01L27/115 ,  H01L27/11521

摘要： A semiconductor memory device manufacturing method includes forming a floating gate electrode above a semiconductor substrate, forming an interelectrode insulating film above the floating gate electrode, forming a first radical nitride film on a surface of the interelectrode insulating film by first radical nitriding, and forming a control gate electrode on the first radical nitride film.

摘要翻译： 一种半导体存储器件制造方法，包括在半导体衬底上形成浮置栅电极，在浮置栅电极上形成电极间绝缘膜，通过第一自由基氮化在电极间绝缘膜的表面上形成第一自由基氮化物膜， 第一自由基氮化物膜上的控制栅电极。

公开(公告)号：US07723772B2

公开(公告)日：2010-05-25

申请号：US11699502

申请日：2007-01-30

申请人： Yoshio Ozawa ,  Isao Kamioka ,  Junichi Shiozawa ,  Akihito Yamamoto ,  Ryota Fujitsuka ,  Yoshihiro Ogawa ,  Katsuaki Natori ,  Katsuyuki Sekine ,  Masayuki Tanaka ,  Daisuke Nishida

发明人： Yoshio Ozawa ,  Isao Kamioka ,  Junichi Shiozawa ,  Akihito Yamamoto ,  Ryota Fujitsuka ,  Yoshihiro Ogawa ,  Katsuaki Natori ,  Katsuyuki Sekine ,  Masayuki Tanaka ,  Daisuke Nishida

IPC分类号： H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119

CPC分类号： H01L27/115 ,  H01L27/11521

摘要： A semiconductor memory device manufacturing method includes forming a floating gate electrode above a semiconductor substrate, forming an interelectrode insulating film above the floating gate electrode, forming a first radical nitride film on a surface of the interelectrode insulating film by first radical nitriding, and forming a control gate electrode on the first radical nitride film.

摘要翻译： 一种半导体存储器件制造方法，包括在半导体衬底上形成浮置栅电极，在浮置栅电极上形成电极间绝缘膜，通过第一自由基氮化在电极间绝缘膜的表面上形成第一自由基氮化物膜， 第一自由基氮化物膜上的控制栅电极。

公开(公告)号：US07714373B2

公开(公告)日：2010-05-11

申请号：US11822437

申请日：2007-07-05

申请人： Katsuaki Natori ,  Masayuki Tanaka ,  Katsuyuki Sekine ,  Hirokazu Ishida ,  Masumi Matsuzaki ,  Yoshio Ozawa

发明人： Katsuaki Natori ,  Masayuki Tanaka ,  Katsuyuki Sekine ,  Hirokazu Ishida ,  Masumi Matsuzaki ,  Yoshio Ozawa

IPC分类号： H01L29/788

CPC分类号： H01L27/115 ,  H01L27/11521

摘要： There is disclosed a semiconductor device including a plurality of memory cell transistors, each memory cell transistor including a floating gate electrode isolated from each other via an isolation insulating film every memory cell transistor, an inter-electrode insulating film comprising a HfxAl1-xOy film (0.8≦x≦0.95) formed on the floating gate electrode, and a control gate electrode formed on the inter-electrode insulating film, wherein the memory cell transistors are arrayed to form a memory cell array.

摘要翻译： 公开了一种包括多个存储单元晶体管的半导体器件，每个存储单元晶体管包括通过每个存储单元晶体管的隔离绝缘膜彼此隔离的浮栅，包括Hf x Al 1-x O y膜的电极间绝缘膜（ 形成在浮置栅电极上的栅极电极，以及形成在电极间绝缘膜上的控制栅电极，其中存储单元晶体管被排列以形成存储单元阵列。

公开(公告)号：US07682899B2

公开(公告)日：2010-03-23

申请号：US11727536

申请日：2007-03-27

申请人： Katsuaki Natori ,  Masayuki Tanaka ,  Akihito Yamamoto ,  Katsuyuki Sekine ,  Ryota Fujitsuka ,  Daisuke Nishida ,  Yoshio Ozawa

发明人： Katsuaki Natori ,  Masayuki Tanaka ,  Akihito Yamamoto ,  Katsuyuki Sekine ,  Ryota Fujitsuka ,  Daisuke Nishida ,  Yoshio Ozawa

IPC分类号： H01L21/336

CPC分类号： H01L27/11568 ,  H01L27/115 ,  H01L27/11521

摘要： A method of manufacturing a semiconductor device comprising a first insulating film formed on a semiconductor substrate, a charge storage layer formed on the first insulating film, a second insulating film formed on the charge storage layer, and a control electrode formed on the second insulating film, wherein forming the second insulating film comprises forming an insulating film containing silicon using source gas not containing chlorine, and forming an insulating film containing oxygen and a metal element on the insulating film containing silicon.

摘要翻译： 一种制造半导体器件的方法，包括形成在半导体衬底上的第一绝缘膜，形成在第一绝缘膜上的电荷存储层，形成在电荷存储层上的第二绝缘膜，以及形成在第二绝缘膜上的控制电极 其中，形成所述第二绝缘膜包括使用不含氯的源气体形成含硅的绝缘膜，以及在含有硅的绝缘膜上形成含有氧和金属元素的绝缘膜。

公开(公告)号：US07635891B2

公开(公告)日：2009-12-22

申请号：US11946606

申请日：2007-11-28

申请人： Katsuaki Natori ,  Katsuyuki Sekine ,  Daisuke Nishida ,  Ryota Fujitsuka ,  Masayuki Tanaka ,  Kazuaki Nakajima ,  Yoshio Ozawa ,  Akihito Yamamoto

发明人： Katsuaki Natori ,  Katsuyuki Sekine ,  Daisuke Nishida ,  Ryota Fujitsuka ,  Masayuki Tanaka ,  Kazuaki Nakajima ,  Yoshio Ozawa ,  Akihito Yamamoto

IPC分类号： H01L27/115

CPC分类号： H01L27/11521 ,  H01L21/28273 ,  H01L27/115 ,  H01L29/513 ,  H01L29/7881

摘要： A semiconductor device includes a semiconductor substrate, and a memory cell array provided on the semiconductor substrate and including a plurality of memory cells arranged on the semiconductor substrate, each of the plurality of the memory cells including a first insulating film provided on the semiconductor substrate, a charge storage layer provided on the first insulating film, a second insulating film provided on the charge storage layer, and a control electrode containing metal or metal silicide provided on the charge storage layer via the second insulating film, wherein a corner of a lower part of the control electrode includes semiconductor and fails to contain the metal or the metal silicide in a channel width direction view of the memory cell.

摘要翻译： 半导体器件包括半导体衬底和设置在半导体衬底上并且包括布置在半导体衬底上的多个存储单元的存储单元阵列，多个存储单元中的每一个包括设置在半导体衬底上的第一绝缘膜， 设置在所述第一绝缘膜上的电荷存储层，设置在所述电荷存储层上的第二绝缘膜，以及经由所述第二绝缘膜设置在所述电荷存储层上的含有金属或金属硅化物的控制电极， 的控制电极包括半导体，并且在存储单元的沟道宽度方向视图中不能容纳金属或金属硅化物。

公开(公告)号：US20090093335A1

公开(公告)日：2009-04-09

申请号：US12241448

申请日：2008-09-30

申请人： Yoshimitsu YOKOUCHI ,  Hideto Watanabe ,  Kunio Takeda ,  Masayuki Tanaka

发明人： Yoshimitsu YOKOUCHI ,  Hideto Watanabe ,  Kunio Takeda ,  Masayuki Tanaka

IPC分类号： F16H3/44

CPC分类号： B60W20/30 ,  B60K1/02 ,  B60K6/365 ,  B60K6/445 ,  B60K6/547 ,  B60W10/02 ,  B60W10/06 ,  B60W10/08 ,  B60W10/115 ,  B60W20/00 ,  B60W2510/244 ,  B60W2520/10 ,  B60W2540/10 ,  F16H3/727 ,  F16H2037/0866 ,  F16H2200/2007 ,  Y02T10/6239 ,  Y02T10/6286

摘要： A transmission includes: a plurality of rotating elements interposed between a driving source and an output portion; a rotating member that rotatably supports one of the rotating elements and is formed at a radially outer portion thereof with a plurality of recesses or protrusions; a support member having a surface, that is facing the rotating member, and a plurality of protrusions or recesses that are formed in a radially inner portion thereof and engage with the recesses or protrusions of the rotating member, the rotating member being mounted in the support member such that the rotating member is not able to rotate; and a friction producing mechanism that is provided between the rotating member and the above-indicated surface of the support member and is arranged to produce a frictional force between the rotating member and the surface of the support member.

摘要翻译： 变速器包括：插入驱动源和输出部之间的多个旋转元件; 旋转构件，其可旋转地支撑所述旋转元件中的一个并且在其径向外侧部分处形成有多个凹部或突起; 具有面向旋转构件的表面的支撑构件和形成在其径向内部并与旋转构件的凹部或突起接合的多个突起或凹部，旋转构件安装在支撑件 构件，使得旋转构件不能旋转; 以及摩擦产生机构，其设置在所述旋转构件和所述支撑构件的上述表面之间，并且被布置成在所述旋转构件和所述支撑构件的表面之间产生摩擦力。

公开(公告)号：US20090001448A1

公开(公告)日：2009-01-01

申请号：US12118328

申请日：2008-05-09

申请人： Katsuyuki Sekine ,  Masayuki Tanaka ,  Katsuaki Natori ,  Daisuke Nishida ,  Ryota Fujitsuka ,  Yoshio Ozawa ,  Akihito Yamamoto

发明人： Katsuyuki Sekine ,  Masayuki Tanaka ,  Katsuaki Natori ,  Daisuke Nishida ,  Ryota Fujitsuka ,  Yoshio Ozawa ,  Akihito Yamamoto

IPC分类号： H01L29/00 ,  H01L21/3205

CPC分类号： H01L21/3105 ,  H01L21/02126 ,  H01L21/0228 ,  H01L21/02337 ,  H01L21/3141 ,  H01L21/31612 ,  H01L27/115 ,  H01L27/11521 ,  H01L29/40114 ,  H01L29/42324

摘要： A semiconductor memory device having a cell size of 60 nm or less includes a tunnel insulation film formed in a channel region of a silicon substrate containing a burying insulation film, a first conductive layer formed on the tunnel insulation film, an inter-electrode insulation film formed on the burying insulation film and the first conductive layer, a second conductive layer formed on the inter-electrode insulation film, a side wall insulation film formed on the side walls of the first conductive layer, the second conductive layer, and the inter-electrode insulation film, and an inter-layer insulation film formed on the side wall insulation film. The tunnel insulation film or the inter-electrode insulation film contains a high-dielectric insulation film. The side wall insulation film contains a predetermined concentration of carbon and nitrogen as well as chlorine having a concentration of 1×1019 atoms/cm3 or less.

摘要翻译： 具有60nm以下的单元尺寸的半导体存储器件包括形成在包含掩埋绝缘膜的硅衬底的沟道区域中的隧道绝缘膜，形成在隧道绝缘膜上的第一导电层，电极间绝缘膜 形成在掩埋绝缘膜和第一导电层上的第二导电层，形成在电极间绝缘膜上的第二导电层，形成在第一导电层，第二导电层和第二导电层的侧壁上的侧壁绝缘膜， 电极绝缘膜和形成在侧壁绝缘膜上的层间绝缘膜。 隧道绝缘膜或电极间绝缘膜包含高介电绝缘膜。 侧壁绝缘膜含有预定浓度的碳氮，以及浓度为1×1019原子/ cm3以下的氯。

公开(公告)号：US20080170377A1

公开(公告)日：2008-07-17

申请号：US11969276

申请日：2008-01-04

申请人： Takeshi Miyasaka ,  Masayuki Tanaka

发明人： Takeshi Miyasaka ,  Masayuki Tanaka

IPC分类号： H05K7/00

CPC分类号： H01H19/005 ,  H01H25/041 ,  H01H2019/006 ,  H01H2025/043 ,  H01H2025/048

摘要： A manipulation input device includes a base, a printed-circuit board adhered to the base, a manipulation member, a pressing projection, and a manipulation dial. A plurality of push-button switches and a magnetic-field detection element are mounted on the printed-circuit board. The manipulation member has a ring-shape plate spring and a pedestal portion. The pressing projection press-contacts the push-button switch by fixing a mounting portion to an outer circumferential edge of the upper surface of the base. The pressing projection is provided toward a lower surface of the pedestal portion. The mounting portion is extended downward from an outer circumferential edge portion of the ring-shape plate spring. A ring magnet is assembled in a lower surface of the manipulation dial. N poles and S poles are alternatively arranged in the ring magnet. The manipulation dial is rotatably assembled in an upper surface of the pedestal portion.

摘要翻译： 操作输入装置包括基座，粘附到基座的印刷电路板，操纵构件，按压突起和操纵拨盘。 多个按钮开关和磁场检测元件安装在印刷电路板上。 操作构件具有环形板簧和基座部。 按压突起通过将安装部固定到基部的上表面的外周边缘而按压按钮开关。 按压突起朝向基座部的下表面设置。 安装部从环状板簧的外周缘部向下方延伸。 环形磁铁组装在操作盘的下表面。 N极和S极交替地布置在环形磁铁中。 操作盘可旋转地组装在基座部分的上表面中。

公开(公告)号：US07387934B2

公开(公告)日：2008-06-17

申请号：US11267331

申请日：2005-11-07

申请人： Yoshio Ozawa ,  Masayuki Tanaka ,  Fumitaka Arai

发明人： Yoshio Ozawa ,  Masayuki Tanaka ,  Fumitaka Arai

IPC分类号： H01L21/336

CPC分类号： H01L27/11521 ,  H01L21/28273 ,  H01L27/115 ,  H01L27/11524 ,  H01L29/42324 ,  H01L29/7883

摘要： The memory cell matrix encompasses (a) a plurality device isolation films running along column direction, (b) first conductive layers arranged along row and column-directions, adjacent groups of the first conductive layers are isolated from each other by the device isolation film disposed between the adjacent groups, (c) lower inter-electrode dielectrics arranged respectively on crests of the corresponding first conductive layers, (d) an upper inter-electrode dielectric arranged on the lower inter-electrode dielectric made of insulating material different from the lower inter-electrode dielectrics, and (e) second conductive layers running along the row-direction, arranged on the upper inter-electrode dielectric.

摘要翻译： 存储单元矩阵包括（a）沿着列方向延伸的多个器件隔离膜，（b）沿着行和列方向布置的第一导电层，相邻的第一导电层组通过设置隔离膜彼此隔离 （c）分别布置在相应的第一导电层的顶部上的下部电极间电介质，（d）布置在由绝缘材料制成的下部电极间电介质上的上部电极间电介质， - 电极介质，和（e）布置在上部电极间电介质上的沿着行方向延伸的第二导电层。