公开(公告)号：US20250103218A1

公开(公告)日：2025-03-27

申请号：US18975874

申请日：2024-12-10

Applicant: Micron Technology, Inc.

Inventor： Mustafa N. Kaynak ,  Patrick R. Khayat ,  Sivagnanam Parthasarathy

IPC: G06F3/06 ,  G11C16/04 ,  G11C16/10 ,  G11C16/26 ,  G11C16/34

Abstract: A system comprising a memory device comprising a plurality of memory cells and a processing device, operatively coupled with the memory device, to perform operations. The processing device determines, for each memory cell of the plurality of memory cells, a respective value of a metric that reflects a sensitivity of a threshold voltage of the memory cell to a change in an adjacent memory cell. The processing device determines, for each wordline of a plurality of wordlines of the memory device, based on the determined values of the metric, a respective aggregate measure of adjacent cell dependence. The processing device categorizes the wordlines into one or more wordline groups based on comparing, for each wordline, the determined aggregate measure of adjacent cell dependence to at least one threshold dependence value.

公开(公告)号：US20250004645A1

公开(公告)日：2025-01-02

申请号：US18886901

申请日：2024-09-16

Applicant: Micron Technology, Inc.

Inventor： Jeffrey S. McNeil ,  Sivagnanam Parthasarathy ,  Kishore Kumar Muchherla ,  Patrick R. Khayat ,  Sead Zildzic ,  Violante Moschiano ,  James Fitzpatrick

IPC: G06F3/06 ,  G11C16/34 ,  G11C29/52

Abstract: A memory device includes array(s) of memory cells including first memory cells configured as single-level cell memory and second memory cells configured as higher-level cell memory. Page buffer(s) are coupled with the array(s). Logic is coupled with the page buffer(s) and to cause, in response to receipt of a copyback clear command, a page buffer to perform a dual-strobe read operation on the first memory cells, the dual-strobe read operation including a soft strobe at a first threshold voltage and a hard strobe at a second threshold voltage. The logic causes the page buffer to determine a number of one bit values within a threshold voltage range between the first threshold voltage and the second threshold voltage. The logic causes, responsive to the number of one bit values not satisfying a threshold criterion, a copyback be performed of data in the first memory cells to the second memory cells.

公开(公告)号：US12046298B2

公开(公告)日：2024-07-23

申请号：US17860690

申请日：2022-07-08

Applicant: Micron Technology, Inc.

Inventor： Mustafa N. Kaynak ,  Patrick R. Khayat ,  Sivagnanam Parthasarathy

IPC: G11C16/26 ,  G06F3/06 ,  G11C16/34 ,  G11C16/04

CPC classification number: G11C16/26 ,  G06F3/0604 ,  G06F3/0655 ,  G06F3/0679 ,  G11C16/3459 ,  G11C16/0483

Abstract: Embodiments disclosed can include selecting a target read window budget (RWB) increase and identifying a set of aggressor memory cells. They can also include generating a list of programming level states for the set of aggressor memory cells and identifying, in the list, an entry associated with a maximum RWB increase that is greater than or equal to the target RWB increase. They can further include responsive to identifying the entry with the total number of bits associated with a maximum RWB increase that is greater than or equal to the target RWB increase, modifying a parameter of the memory access operation with the adjustment associated with the identified entry.

公开(公告)号：US12032444B2

公开(公告)日：2024-07-09

申请号：US18329886

申请日：2023-06-06

Applicant: Micron Technology, Inc.

Inventor： Mustafa N. Kaynak ,  Patrick R. Khayat ,  Sivagnanam Parthasarathy

IPC: G06F11/10 ,  G06F11/00 ,  H03M13/00

CPC classification number: G06F11/1076 ,  H03M13/00

Abstract: Methods, systems, and apparatus for error correction with syndrome computation in a memory device are described. A first syndrome for first encoded data is generated in a memory device. The first syndrome and the first encoded data are transmitted to a controller that is coupled with the memory device. A second syndrome for first and second encoded data is generated. The first encoded data and the second encoded data are interrelated according to an error correction code. The second syndrome is transmitted to the controller without the second encoded data and the controller is to decode the first encoded data based on at least one of the first syndrome, the second syndrome, or a combination thereof.

公开(公告)号：US12007838B2

公开(公告)日：2024-06-11

申请号：US17877637

申请日：2022-07-29

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Vamsi Pavan Rayaprolu ,  Dung Viet Nguyen ,  Zixiang Loh ,  Sampath K Ratnam ,  Patrick R. Khayat ,  Thomas Herbert Lentz

IPC: G06F11/00 ,  G06F11/10

CPC classification number: G06F11/1044

Abstract: A request to access data programmed to a memory sub-system is received. A determination is made of whether memory cells of the memory sub-system that store the programmed data satisfy one or more cell degradation criteria. In response to a determination that the memory cells satisfy the one or more cell degradation criteria, an error correction operation to access the data is performed in accordance with the request.

公开(公告)号：US20240161836A1

公开(公告)日：2024-05-16

申请号：US18507387

申请日：2023-11-13

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Shantilal Rayshi Doru ,  Patrick R. Khayat ,  Steven Michael Kientz ,  Sampath K. Ratnam ,  Dung Viet Nguyen

IPC: G11C16/34 ,  G06F12/02

CPC classification number: G11C16/3404 ,  G06F12/0246

Abstract: Described are systems and methods for memory read threshold tracking based on memory device-originated metrics characterizing voltage distributions. An example memory device includes: a memory array having a plurality of memory cells and a controller coupled to the memory array. The controller is to perform operations including: receiving a first value of a metric characterizing threshold voltage distributions of a subset of a set of the plurality of memory cells; determining a first voltage threshold adjustment value; receiving a second value of the metric; determining a second voltage threshold adjustment value; and applying the second voltage threshold adjustment value for reading the set of the plurality of memory cells.

公开(公告)号：US20240071521A1

公开(公告)日：2024-02-29

申请号：US18228291

申请日：2023-07-31

Applicant: Micron Technology, Inc.

Inventor： Dung Viet Nguyen ,  Patrick R. Khayat ,  Sivagnanam Parthasarathy ,  Zhengang Chen ,  Dheeraj Srinivasan

IPC: G11C16/26 ,  G11C16/32 ,  G11C29/52

CPC classification number: G11C16/26 ,  G11C16/32 ,  G11C29/52

Abstract: Described are memory devices producing metadata characterizing the applied read voltage level with respect to voltage distributions. An example memory sub-system comprises: a memory device comprising a plurality of memory cells; and a controller coupled to the memory device, the controller to perform operations comprising: performing, using a read voltage level, a read strobe with respect to a subset of the plurality of memory cells; and receiving, from the memory device, one or more metadata values characterizing the read voltage level with respect to threshold voltage distributions of the subset of the plurality of memory cells, wherein the one or more metadata values reflect a conductive state of one or more bitlines connected to the subset of the plurality of memory cells.

公开(公告)号：US20240055050A1

公开(公告)日：2024-02-15

申请号：US17884113

申请日：2022-08-09

Applicant: Micron Technology, Inc.

Inventor： Mustafa N. Kaynak ,  Patrick R. Khayat ,  Sivagnanam Parthasarathy

IPC: G11C16/08 ,  G11C16/34 ,  G11C16/10 ,  G06F3/06

CPC classification number: G11C16/08 ,  G11C16/3459 ,  G11C16/10 ,  G06F3/0655 ,  G06F3/0604 ,  G06F3/0679 ,  G11C16/0483

Abstract: Embodiments disclosed can include determining, for a wordline of the plurality of wordlines, a respective value of a sensitivity metric that reflects a sensitivity of a threshold voltage of a memory cell associated with the wordline to a change in a threshold voltage of an adjacent memory cell. Embodiments can also include determining, for the wordline, that the respective value of the sensitivity metric satisfies a threshold criterion. Embodiments can further include responsive to determining that the respective value of the sensitivity metric satisfies the threshold criterion, associating the wordline with a first wordline group, wherein the first wordline group comprises one or more wordlines, and wherein each wordline of the one or more wordlines is associated with a respective value of the sensitivity metric that satisfies the threshold criterion. Embodiments can include performing, on a specified memory cell connected to the wordline associated with the first wordline group, a compensatory operation.

公开(公告)号：US20230395168A1

公开(公告)日：2023-12-07

申请号：US17860711

申请日：2022-07-08

Applicant: Micron Technology, Inc.

Inventor： Mustafa N. Kaynak ,  Patrick R. Khayat ,  Sivagnanam Parthasarathy

IPC: G11C16/34 ,  G11C16/04 ,  G11C16/10

CPC classification number: G11C16/3459 ,  G11C16/0483 ,  G11C16/10

Abstract: Embodiments disclosed can include identifying wordline groups where each wordline group is associated with a corresponding default program verify (PV) voltage for each programming level, and determining, for each wordline group, a maximum read window budget (RWB) increase. They can further include defining a target aggregate RWB increase amount based on the maximum RWB increase, and determining, for each wordline group, a minimum number of memory cell programming level groups with corresponding PV voltage offsets sufficient to reach the target aggregate RWB increase amount. The embodiments can also include grouping the programming levels of a specified memory cell into the minimum number of programming level, and applying, based on the specific programming level group containing a target programming level, a corresponding PV voltage offset during a memory cell access operation.

公开(公告)号：US20230393755A1

公开(公告)日：2023-12-07

申请号：US17860701

申请日：2022-07-08

Applicant: Micron Technology, Inc.

Inventor： Mustafa N. Kaynak ,  Patrick R. Khayat ,  Sivagnanam Parthasarathy

IPC: G06F3/06 ,  G11C16/34 ,  G11C16/10 ,  G11C16/26

CPC classification number: G06F3/0619 ,  G11C16/34 ,  G11C16/10 ,  G11C16/26 ,  G06F3/0655 ,  G06F3/0679 ,  G11C16/0483

Abstract: Embodiments disclosed can include determining, for each memory cell connected to each wordline, a respective value of a metric that reflects a sensitivity of a threshold voltage associated with the memory cell to a change in a threshold voltage of an adjacent cell and determining, for each wordline, based on the determined sensitivity for each memory cell, a respective aggregate measure of adjacent cell dependence. They can further include comparing the determined aggregate measure of adjacent cell dependence to a threshold dependence value. They can also include identifying a first wordline group having wordlines with high adjacent cell dependence and a second wordline group having wordlines with low adjacent cell dependence and storing a record referencing the wordlines of the second wordline group, the record indicating a corresponding location on the die of the memory device.