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107 条记录 (耗时 0.035 秒)

    Semiconductor device
    73.
    发明授权
    Semiconductor device 失效
    半导体器件

    公开(公告)号：US08643091B2

    公开(公告)日：2014-02-04

    申请号：US13052028

    申请日：2011-03-18

    申请人： Wataru Saito ,  Syotaro Ono ,  Shunji Taniuchi ,  Miho Watanabe ,  Hiroaki Yamashita

    发明人： Wataru Saito ,  Syotaro Ono ,  Shunji Taniuchi ,  Miho Watanabe ,  Hiroaki Yamashita

    IPC分类号： H01L29/78 ,  H01L21/336

    CPC分类号： H01L29/7839 ,  H01L29/0619 ,  H01L29/0623 ,  H01L29/0878 ,  H01L29/402 ,  H01L29/407 ,  H01L29/41741 ,  H01L29/41766 ,  H01L29/4236 ,  H01L29/42368 ,  H01L29/66727 ,  H01L29/66734 ,  H01L29/7806 ,  H01L29/7811 ,  H01L29/7813

    摘要： A semiconductor device includes first, second, third, and fourth semiconductor layers of alternating first and second conductivity types, an embedded electrode in a first trench that penetrates through the second semiconductor layer, a control electrode above the embedded electrode in the first trench, and first and second main electrodes. The fourth semiconductor layer is selectively provided in the first semiconductor layer and is connected to a lower end of a second trench, which penetrates through the second semiconductor layer. The first main electrode is electrically connected to the first semiconductor layer, and the second main electrode is in the second trench and electrically connected to the second, third, and fourth semiconductor layers. The embedded electrode is electrically connected to the second main electrode or the control electrode. A Shottky junction formed of the second main electrode and the first semiconductor layer is formed at a sidewall of the second trench.

    摘要翻译： 半导体器件包括交替的第一和第二导电类型的第一，第二，第三和第四半导体层，穿透第二半导体层的第一沟槽中的嵌入电极，在第一沟槽中的嵌入电极上方的控制电极，以及 第一和第二主电极。 第四半导体层选择性地设置在第一半导体层中，并且连接到穿过第二半导体层的第二沟槽的下端。 第一主电极与第一半导体层电连接，第二主电极位于第二沟槽中，并与第二，第三和第四半导体层电连接。 嵌入电极与第二主电极或控制电极电连接。 在第二沟槽的侧壁处形成由第二主电极和第一半导体层形成的肖特基结。

    Methods of generating and using antibody-producing cells
    75.
    发明授权
    Methods of generating and using antibody-producing cells 失效
    产生和使用抗体产生细胞的方法

    公开(公告)号：US08343761B2

    公开(公告)日：2013-01-01

    申请号：US13187677

    申请日：2011-07-21

    申请人： Masayuki Tsuchiya ,  Masami Suzuki ,  Kenji Yoshida ,  Etsuko Fujii ,  Miho Watanabe ,  Koichi Matsubara ,  Yu Jau Chen ,  Juliana Sim

    发明人： Masayuki Tsuchiya ,  Masami Suzuki ,  Kenji Yoshida ,  Etsuko Fujii ,  Miho Watanabe ,  Koichi Matsubara ,  Yu Jau Chen ,  Juliana Sim

    IPC分类号： C12N5/06 ,  A01K67/00 ,  C12N5/00

    CPC分类号： A01K67/027 ,  A01K2267/01 ,  A61K35/16 ,  C07K16/00 ,  C07K16/30

    摘要： An objective of the present invention is to facilitate the acquisition of antibody-producing cells that are infiltrating virus-infected cells, cancer cells, abnormal cells forming a benign hyperplasia, and the like, and to improve the efficiency of the production of antibodies as well as nucleic acids encoding them from the antibody-producing cells.The present inventors discovered that, when cancer tissues comprising infiltrating lymphocytes are transplanted into highly immunodeficient animals that do not have T cells, B cells, and NK cells and further exhibit a low IFN production ability, the differentiation and proliferation of infiltrating lymphocytes are unexpectedly promoted, and the number of plasma cells that produce antibodies recognizing cancer tissues increases dramatically, plasma cells can be separated easily, and antibodies or nucleic acids encoding them can be easily prepared from the plasma cells.

    摘要翻译： 本发明的目的是便于获得渗透病毒感染细胞的抗体产生细胞，癌细胞，形成良性增生的异常细胞等，以及提高抗体生产的效率 作为从抗体产生细胞编码它们的核酸。 本发明人发现，当将包含浸润性淋巴细胞的癌组织移植到不具有T细胞，B细胞和NK细胞的高度免疫缺陷的动物中并且进一步表现出低的IFN产生能力时，意外地促进了浸润性淋巴细胞的分化和增殖 并且产生识别癌组织的抗体的浆细胞的数量急剧增加，可以容易地分离浆细胞，并且可以容易地从浆细胞制备抗体或编码它们的核酸。

    Composite and method of manufacturing the same
    76.
    发明授权
    Composite and method of manufacturing the same 有权
    复合材料及其制造方法

    公开(公告)号：US08052952B2

    公开(公告)日：2011-11-08

    申请号：US12656496

    申请日：2010-02-01

    申请人： Miho Watanabe ,  Kentaro Kishi ,  Chikara Manabe ,  Kazunori Anazawa ,  Masaki Hirakata ,  Taishi Shigematsu ,  Hiroyuki Watanabe ,  Takashi Isozaki ,  Shigeki Ooma ,  Shinsuke Okada

    发明人： Miho Watanabe ,  Kentaro Kishi ,  Chikara Manabe ,  Kazunori Anazawa ,  Masaki Hirakata ,  Taishi Shigematsu ,  Hiroyuki Watanabe ,  Takashi Isozaki ,  Shigeki Ooma ,  Shinsuke Okada

    IPC分类号： D01F9/12 ,  C09C1/56

    CPC分类号： B82Y30/00 ,  C08K7/24 ,  C08K2201/011 ,  Y10T428/25

    摘要： Provided is a nanotube-polymer composite which can effectively utilize characteristics of a carbon nanotube structure. The composite includes a carbon nanotube structure and a polymer, in which: the carbon nanotube structure has a network structure constructed by mutually cross-linking functional groups bonded to multiple carbon nanotubes through chemical bonding of the functional groups together; and the polymer is filled in the network structure. Also provided is a method of manufacturing a composite which includes the steps of: supplying a base body surface with a solution containing multiple carbon nanotubes to which multiple functional groups are bonded; mutually cross-linking the multiple carbon nanotubes through chemical bonding of the multiple functional groups together to construct a network structure constituting a carbon nanotube structure; impregnating the network structure with a polymer liquid forming a polymer; and combining the carbon nanotube structure and the polymer by curing the polymer liquid.

    摘要翻译： 提供了可以有效利用碳纳米管结构的特征的纳米管 - 聚合物复合材料。 复合材料包括碳纳米管结构和聚合物，其中：所述碳纳米管结构具有通过将所述官能团化学键合在一起而通过将与多个碳纳米管结合的官能团相互交联而构成的网络结构; 并且聚合物填充在网络结构中。 还提供一种制造复合材料的方法，其包括以下步骤：向基体表面供给含有多个键合有多个官能团的多个碳纳米管的溶液; 通过多个官能团的化学键合将多个碳纳米管相互交联在一起构成构成碳纳米管结构的网络结构; 用形成聚合物的聚合物液体浸渍网状结构; 并通过固化聚合物液体来结合碳纳米管结构和聚合物。

    Semiconductor device and method of manufacturing the same
    77.
    发明授权
    Semiconductor device and method of manufacturing the same 失效
    半导体装置及其制造方法

    公开(公告)号：US07919824B2

    公开(公告)日：2011-04-05

    申请号：US12403881

    申请日：2009-03-13

    申请人： Syotaro Ono ,  Wataru Saito ,  Nana Hatano ,  Masaru Izumisawa ,  Yasuto Sumi ,  Hiroshi Ohta ,  Wataru Sekine ,  Miho Watanabe

    发明人： Syotaro Ono ,  Wataru Saito ,  Nana Hatano ,  Masaru Izumisawa ,  Yasuto Sumi ,  Hiroshi Ohta ,  Wataru Sekine ,  Miho Watanabe

    IPC分类号： H01L27/088

    CPC分类号： H01L29/66712 ,  H01L21/266 ,  H01L29/0615 ,  H01L29/0634 ,  H01L29/0638 ,  H01L29/0696 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/402 ,  H01L29/7395 ,  H01L29/7811

    摘要： A semiconductor device includes a super junction region that has a first-conductivity-type first semiconductor pillar region and a second-conductivity-type second semiconductor pillar region alternately provided on the semiconductor substrate. The first semiconductor pillar region and the second semiconductor pillar region in a termination region have a lamination form resulting from alternate lamination of the first semiconductor pillar region and the second semiconductor pillar region on the top surface of the semiconductor substrate. The first semiconductor pillar region and/or the second semiconductor pillar region at a corner part of the termination region exhibit an impurity concentration distribution such that a plurality of impurity concentration peaks appear periodically. The first semiconductor pillar region and/or the second semiconductor pillar region at a corner part of the termination region have an impurity amount such that it becomes smaller as being closer to the circumference of the corner part.

    摘要翻译： 半导体器件包括具有交替设置在半导体衬底上的第一导电型第一半导体柱区域和第二导电型第二半导体柱区域的超结区域。 终端区域中的第一半导体柱区域和第二半导体柱区域具有由半导体衬底的顶表面上的第一半导体柱区域和第二半导体柱区域的交替层叠形成的叠层形式。 终端区域的角部处的第一半导体柱区域和/或第二半导体柱区域显示杂质浓度分布，使得多个杂质浓度峰值周期性出现。 终端区域的角部处的第一半导体柱区域和/或第二半导体柱区域具有使得随着角部更靠近圆周而变小的杂质量。

    SEMICONDUCTOR DEVICE
    78.
    发明申请
    SEMICONDUCTOR DEVICE 有权
    半导体器件

    公开(公告)号：US20100187604A1

    公开(公告)日：2010-07-29

    申请号：US12692527

    申请日：2010-01-22

    申请人： SYOTARO ONO ,  Wataru Saito ,  Nana Hatano ,  Hiroshi Ohta ,  Miho Watanabe

    发明人： SYOTARO ONO ,  Wataru Saito ,  Nana Hatano ,  Hiroshi Ohta ,  Miho Watanabe

    IPC分类号： H01L29/78

    CPC分类号： H01L29/7802 ,  H01L29/0634 ,  H01L29/1095 ,  H01L29/66712 ,  H01L29/7397

    摘要： A semiconductor device includes a semiconductor substrate of a first conductivity type, a first semiconductor region of the first conductivity type on the semiconductor substrate, and a plurality of second semiconductor regions of a second conductivity type disposed separately in the first semiconductor region. A difference between a charge quantity expressed by an integral value of a net activated doping concentration in the second semiconductor regions in the surface direction of the semiconductor substrate and a charge quantity expressed by an integral value of a net activated doping concentration in the first semiconductor region in the surface direction of the semiconductor substrate is always a positive quantity and becomes larger from the depth of the first junction plane to a depth of a second junction plane on an opposite side from the first junction plane.

    摘要翻译： 半导体器件包括第一导电类型的半导体衬底，半导体衬底上的第一导电类型的第一半导体区域和分开设置在第一半导体区域中的多个第二导电类型的第二半导体区域。 由半导体衬底的表面方向上的第二半导体区域中的净活化掺杂浓度的积分值表示的电荷量与由第一半导体区域中的净活化掺杂浓度的积分值表示的电荷量之间的差异 在半导体基板的表面方向总是为正量，并且从第一接合面的深度到与第一接合面相反的一侧的第二接合面的深度变得更大。

    Electrode for electrochemical measurement
    80.
    发明授权
    Electrode for electrochemical measurement 失效
    电极用于电化学测量

    公开(公告)号：US07573186B2

    公开(公告)日：2009-08-11

    申请号：US10863732

    申请日：2004-06-09

    申请人： Taishi Shigematsu ,  Miho Watanabe ,  Chikara Manabe ,  Hiroyuki Watanabe

    发明人： Taishi Shigematsu ,  Miho Watanabe ,  Chikara Manabe ,  Hiroyuki Watanabe

    IPC分类号： H01J1/02 ,  H01B1/00 ,  C08F220/04

    CPC分类号： B82Y15/00 ,  B82Y30/00 ,  G01N27/308

    摘要： The present invention provides an electrode for electrochemical measurement including a carbon nanotube, a catalyst causing a specific chemical reaction, and an insulator in which the carbon nanotube and the catalyst are embedded, wherein a part of the catalyst is exposed at the surface of the insulator and a part of the carbon nanotube is exposed at the surface of the insulator to form an electoconductive portion, or wherein a part of the catalyst is exposed at the surface of the insulator, and a part of the carbon nanotube is electrically connected to the exposed catalyst to form an electoconductive portion.

    摘要翻译： 本发明提供一种用于电化学测量的电极，包括碳纳米管，引起特定化学反应的催化剂，以及嵌入有碳纳米管和催化剂的绝缘体，其中一部分催化剂在绝缘体的表面露出 并且所述碳纳米管的一部分在所述绝缘体的表面露出以形成电导体部分，或者其中所述催化剂的一部分在所述绝缘体的表面露出，并且所述碳纳米管的一部分与所述暴露的 催化剂形成电导电部分。