METHOD FOR MANUFACTURING SOI SUBSTRATE
    72.
    发明申请
    METHOD FOR MANUFACTURING SOI SUBSTRATE 有权
    制造SOI衬底的方法

    公开(公告)号:US20100227452A1

    公开(公告)日:2010-09-09

    申请号:US12161819

    申请日:2007-02-08

    IPC分类号: H01L21/762

    摘要: A heating plate having a smooth surface is placed on a hot plate which constitutes a heating section, and the smooth surface of the heating plate is closely adhered on the rear surface of a single-crystal Si substrate bonded to a transparent insulating substrate. The temperature of the heating plate is kept at 200° C. or higher but not higher than 350° C. When the rear surface of the single-crystal Si substrate bonded to the insulating substrate is closely adhered on the heating plate, the single-crystal Si substrate is heated by thermal conduction, and a temperature difference is generated between the single-crystal Si substrate and the transparent insulating substrate. A large stress is generated between the both substrates due to rapid expansion of the single-crystal Si substrate, thus separation takes place at a hydrogen ion-implanted interface.

    摘要翻译: 将具有光滑表面的加热板放置在构成加热部分的加热板上,并且加热板的光滑表面紧密地粘附在粘结到透明绝缘基板的单晶Si基板的背面上。 加热板的温度保持在200℃以上但不高于350℃。当结合到绝缘基板的单晶Si衬底的后表面紧密地粘附在加热板上时, 晶体硅衬底通过热传导加热,并且在单晶硅衬底和透明绝缘衬底之间产生温度差。 由于单晶Si衬底的快速膨胀,在两个衬底之间产生大的应力,因此在氢离子注入界面处发生分离。

    IMAGING APPARATUS, IMAGE PROCESSING METHOD, AND IMAGE PROCESSING PROGRAM
    73.
    发明申请
    IMAGING APPARATUS, IMAGE PROCESSING METHOD, AND IMAGE PROCESSING PROGRAM 有权
    成像设备,图像处理方法和图像处理程序

    公开(公告)号:US20100177208A1

    公开(公告)日:2010-07-15

    申请号:US12687709

    申请日:2010-01-14

    IPC分类号: H04N5/228

    摘要: An imaging apparatus is equipped with: imaging means, for obtaining images of a subject; imaging control means, for controlling the imaging means to sequentially obtain a plurality of images; reference image selecting means, for selecting a single reference image from among the plurality of images; moving object region specifying means, for specifying moving object regions within corresponding images, which are the plurality of images other than the selected reference image; positioning means, for positioning the plurality of corresponding images with respect to the reference image in the case that the plurality of images have been imaged by flow shooting, the positioning being performed such that the amount of positioning is greater at the specified moving object regions than at non moving object regions; and combining means, for combining the plurality of corresponding images, which have been positioned by the positioning means, with the reference image.

    摘要翻译: 成像装置配备有:用于获得被摄体的图像的成像装置; 成像控制装置,用于控制成像装置顺序地获得多个图像; 参考图像选择装置,用于从所述多个图像中选择单个参考图像; 移动对象区域指定装置,用于指定作为选择的参考图像以外的多个图像的对应图像内的移动对象区域; 定位装置,用于在通过流动拍摄成像多个图像的情况下,相对于参考图像定位多个对应图像,定位被执行为使得在指定的移动物体区域的定位量大于 在非移动物体区域; 以及用于将由定位装置定位的多个对应图像与参考图像组合的组合装置。

    Muffler structure
    74.
    发明授权
    Muffler structure 失效
    消声器结构

    公开(公告)号:US07735602B2

    公开(公告)日:2010-06-15

    申请号:US11802868

    申请日:2007-05-25

    IPC分类号: F01N13/08

    摘要: A muffler structure capable of suppressing generation of abnormal noise in the muffler even when the outer and the inner tubes expand thermally. Provided is a double-pipe muffler structure including an inner tube and an outer tube. In the muffler structure, an annular front step portion and an annular rear step portion are formed in the inner tube, while the step portions is brought into contact, from inside, with the outer tube and thus are supported by the outer tube. The outer tube supports the front and the rear step portions by being brought into close contact with the step portions partially and elastically.

    摘要翻译: 即使外管和内管热膨胀,也能够抑制消音器产生异常噪音的消音器结构。 提供一种包括内管和外管的双管消声器结构。 在消声器结构中,在内管中形成环状的前台阶部和环状的后台阶部,同时台阶部从内侧与外管接触,由外管支承。 外管通过部分地弹性地与台阶部紧密接触来支撑前台阶部和后台阶部。

    Belt type continuously variable transmission
    75.
    发明授权
    Belt type continuously variable transmission 失效
    皮带式无级变速器

    公开(公告)号:US07708660B2

    公开(公告)日:2010-05-04

    申请号:US11131257

    申请日:2005-05-18

    IPC分类号: F16H59/00 F16H61/00

    CPC分类号: F16H55/56

    摘要: A belt type continuously variable transmission includes an adjustable sheave which is provided with a fixed rotor fixed to a revolving shaft and with a movable rotor attached to the revolving shaft by spline fit in a manner inhibiting their relative rotation and allowing axial displacement so that a groove width is adjustable between the movable rotor and the fixed rotor, wherein the revolving shaft is provided with a load supporting portion on which tip surfaces of spline teeth of the movable rotor are in slide contact, whereby a radial load from the movable rotor is supported by the load supporting portion.

    摘要翻译: 带式无级变速器包括可调节滑轮,其具有固定在旋转轴上的固定转子,并且具有通过花键配合而附接到旋转轴的可动转子,该方式抑制其相对旋转并允许轴向位移,使得槽 所述可动转子与所述固定转子之间的宽度是可调节的,其中,所述回转轴设置有负载支承部,所述可动转子的花键齿的顶端表面滑动接触,由此来自所述可动转子的径向载荷由 负载支承部。

    Test apparatus and test method
    76.
    发明授权
    Test apparatus and test method 失效
    试验装置及试验方法

    公开(公告)号:US07696771B2

    公开(公告)日:2010-04-13

    申请号:US12042343

    申请日:2008-03-05

    IPC分类号: G01R31/26

    CPC分类号: G01R31/31901 G01R31/31721

    摘要: Provided is a test apparatus that tests fluctuation of a power supply voltage supplied to a device under test, including an oscillator that outputs a clock signal having a frequency that corresponds to the power supply voltage supplied to the power supply input terminal of the device under test, and a measuring section that measures the frequency of the clock signal. For example, the oscillator outputs as the clock signal an output signal of any one negative logic element from among an odd number of negative logic elements connected in a loop, and at least one of the negative logic elements operates using, as a voltage source, a voltage corresponding to the power supply voltage supplied to the power supply input terminal of the device under test.

    摘要翻译: 提供一种测试装置,其测试提供给被测设备的电源电压的波动,该测试装置包括输出具有与提供给被测设备的电源输入端的电源电压相对应的频率的时钟信号的振荡器 以及测量时钟信号频率的测量部分。 例如,振荡器作为时钟信号输出来自连接在一个回路中的奇数个负逻辑单元中的任何一个负逻辑单元的输出信号,并且至少一个负逻辑单元使用作为电压源的操作, 对应于提供给被测设备的电源输入端的电源电压的电压。

    DEVELOPMENT OF METHOD FOR SCREENING FOR DRUG CAPABLE OF IMPROVING PRODUCTION OF REGULATORY T CELLS AND METHOD FOR PRODUCING REGULATORY T CELLS USING IMMUNOSUPPRESSIVE MACROLIDE ANTIBIOTIC
    78.
    发明申请
    DEVELOPMENT OF METHOD FOR SCREENING FOR DRUG CAPABLE OF IMPROVING PRODUCTION OF REGULATORY T CELLS AND METHOD FOR PRODUCING REGULATORY T CELLS USING IMMUNOSUPPRESSIVE MACROLIDE ANTIBIOTIC 审中-公开
    用于筛选用于改善调节性T细胞产生的药物的方法的开发和使用免疫抑制性大鼠抗生素制备调节性T细胞的方法

    公开(公告)号:US20090246212A1

    公开(公告)日:2009-10-01

    申请号:US12088812

    申请日:2006-09-29

    CPC分类号: G01N33/505 C12N5/0636

    摘要: The present invention provides a screening method for a compound capable of inducing regulatory T cells, comprising the following steps:(1) a step for culturing CD4+ T cells having a naïve phenotype in the presence of a test compound, and isolating T cells from the culture product; (2) a step for evaluating the immunosuppressive function of the T cells isolated in the step (1); (3) a step for obtaining the foregoing test compound as a compound capable of inducing regulatory T cells if the results of the evaluation in the step (2) show that the T cells isolated in the step (1) have immunosuppressive function. The present invention also provides a method of producing regulatory T cells, comprising culturing CD4+ T cells having a naïve phenotype in the presence of a rapamycin compound to obtain regulatory T cells. The regulatory T cell produced by the method can be used as an immunomodulator for the prophylaxis or treatment of the rejection in organ transplantation, an allergic disease, an autoimmune disease, a graft-versus-host disease (GVHD), infertility and the like.

    摘要翻译: 本发明提供了能够诱导调节性T细胞的化合物的筛选方法,包括以下步骤:(1)在试验化合物存在下培养具有初始表型的CD4 + T细胞的步骤, 文化产品; (2)评价步骤(1)中分离的T细胞的免疫抑制功能的步骤。 (3)如果步骤(2)中的评价结果​​表明在步骤(1)中分离的T细胞具有免疫抑制功能,则获得作为能诱导调节性T细胞的化合物的上述试验化合物的步骤。 本发明还提供了一种产生调节性T细胞的方法,包括在雷帕霉素化合物存在下培养具有初始表型的CD4 + T细胞以获得调节性T细胞。 通过该方法产生的调节性T细胞可用作免疫调节剂,用于预防或治疗器官移植排斥反应,过敏性疾病,自身免疫性疾病,移植物抗宿主病(GVHD),不育症等。

    REMOTE COPY SYSTEM, REMOTE ENVIRONMENT SETTING METHOD, AND DATA RESTORE METHOD
    79.
    发明申请
    REMOTE COPY SYSTEM, REMOTE ENVIRONMENT SETTING METHOD, AND DATA RESTORE METHOD 有权
    远程复制系统,远程环境设置方法和数据恢复方法

    公开(公告)号:US20090164531A1

    公开(公告)日:2009-06-25

    申请号:US12038403

    申请日:2008-02-27

    IPC分类号: G06F17/30 G06F15/16

    摘要: The input of a prescribed type information element is received from an operator via an operator interface. A first storage system outputs a first type information element required to construct a remote copy environment. A second storage system inputs second setting information, which comprises first type information elements and prescribed type information elements, uses the second setting information to execute a second setting, and outputs the second type information element required to construct a remote copy environment. The first storage system inputs first setting information, which comprises the second type information element, and uses the first setting information to execute a first setting. Since the types of information elements required to construct a remote copy environment are exchanged between the storage systems, the number of types of information elements inputted by the operator are less than the number of types of information elements required to construct the remote copy environment.

    摘要翻译: 经由操作员界面从操作者接收规定类型的信息要素的输入。 第一存储系统输出构建远程复制环境所需的第一类型信息元素。 第二存储系统输入包括第一类型信息元素和规定类型信息元素的第二设置信息,使用第二设置信息来执行第二设置,并输出构成远程复制环境所需的第二类型信息元素。 第一存储系统输入包括第二类型信息元素的第一设置信息,并且使用第一设置信息来执行第一设置。 由于在存储系统之间交换构建远程复制环境所需的信息元素的类型,所以由操作者输入的信息元素的类型数量小于构建远程复制环境所需的信息元素的数量。

    METHOD FOR MANUFACTURING SUBSTRATE FOR PHOTOELECTRIC CONVERSION ELEMENT
    80.
    发明申请
    METHOD FOR MANUFACTURING SUBSTRATE FOR PHOTOELECTRIC CONVERSION ELEMENT 有权
    光电转换元件制造基板的方法

    公开(公告)号:US20090061557A1

    公开(公告)日:2009-03-05

    申请号:US12282176

    申请日:2007-03-12

    IPC分类号: H01L31/18

    摘要: A silicon layer having a conductivity type opposite to that of a bulk is provided on the surface of a silicon substrate and hydrogen ions are implanted to a predetermined depth into the surface region of the silicon substrate through the silicon layer to form a hydrogen ion-implanted layer. Then, an n-type germanium-based crystal layer whose conductivity type is opposite to that of the silicon layer and a p-type germanium-based crystal layer whose conductivity type is opposite to that of the germanium-based crystal layer are successively vapor-phase grown to provide a germanium-based crystal. The surface of the germanium-based crystal layer and the surface of the supporting substrate are bonded together. In this state, impact is applied externally to separate a silicon crystal from the silicon substrate along the hydrogen ion-implanted layer, thereby transferring a laminated structure composed of the germanium-based crystal and the silicon crystal onto the supporting substrate.

    摘要翻译: 在硅衬底的表面上提供具有与体的导电类型相反的导电类型的硅层,并且通过硅层将氢离子注入到硅衬底的表面区域中以预定深度注入到氢离子注入 层。 然后,其导电类型与硅层的导电类型相反的n型锗基晶体层和导电类型与锗基晶体层的导电类型相反的p型锗基晶体层连续蒸发, 相生长以提供锗基晶体。 锗基晶体层的表面和支撑基板的表面接合在一起。 在这种状态下,外部施加冲击以沿着氢离子注入层从硅衬底分离硅晶体,从而将由锗基晶体和硅晶体组成的叠层结构转移到支撑衬底上。