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133 条记录 (耗时 0.028 秒)

    Solid state image sensor and a driving method thereof
    71.
    发明授权
    Solid state image sensor and a driving method thereof 失效
    固态图像传感器及其驱动方法

    公开(公告)号：US5539461A

    公开(公告)日：1996-07-23

    申请号：US216535

    申请日：1994-03-23

    申请人： Fumihiko Andoh ,  Kazuhisa Taketoshi ,  Katsu Tanaka ,  Masao Yamawaki ,  Hidekazu Yamamoto ,  Hiroshi Kawashima ,  Naofumi Murata

    发明人： Fumihiko Andoh ,  Kazuhisa Taketoshi ,  Katsu Tanaka ,  Masao Yamawaki ,  Hidekazu Yamamoto ,  Hiroshi Kawashima ,  Naofumi Murata

    IPC分类号： H01L27/146 ,  H04N5/335 ,  H04N5/341 ,  H04N5/347 ,  H04N5/351 ,  H04N5/357 ,  H04N5/369 ,  H04N5/374 ,  H04N5/3745 ,  H04N3/12 ,  H04N3/14 ,  H04N9/07

    CPC分类号： H01L27/14665 ,  H01L27/14643 ,  H04N3/1512

    摘要： An image sensor includes a photoelectric conversion element, a first MOS transistor having having a gate connected to the photoelectric conversion element, a second MOS transistor connected in series with the first transistor, and a third MOS transistor connected in series with the photoelectric conversion element, wherein the threshold voltage of the third MOS transistor is set higher than that of the second MOS transistor. In one embodiment, each of the pixels included in a second group of rows includes a photoelectric conversion element but without the first, second and third MOS transistors. A fourth MOS transistor connects a photoelectric conversion element of the second group to a photoelectric conversion element of a first group, the photoelectric conversion elements of the first group being part of pixels which contain first, second and third MOS transistors.

    摘要翻译： 图像传感器包括光电转换元件，具有连接到光电转换元件的栅极的第一MOS晶体管，与第一晶体管串联连接的第二MOS晶体管和与光电转换元件串联连接的第三MOS晶体管， 其中所述第三MOS晶体管的阈值电压被设定为高于所述第二MOS晶体管的阈值电压。 在一个实施例中，包括在第二组行中的每个像素包括光电转换元件，但不包括第一，第二和第三MOS晶体管。 第四MOS晶体管将第二组的光电转换元件连接到第一组的光电转换元件，第一组的光电转换元件是包含第一，第二和第三MOS晶体管的像素的一部分。

    Solid-state imaging array including focusing elements
    72.
    发明授权
    Solid-state imaging array including focusing elements 失效
    固态成像阵列包括聚焦元件

    公开(公告)号：US5371397A

    公开(公告)日：1994-12-06

    申请号：US18146

    申请日：1993-02-16

    申请人： Shigeto Maegawa ,  Hidekazu Yamamoto ,  Hiroshi Kawashima

    发明人： Shigeto Maegawa ,  Hidekazu Yamamoto ,  Hiroshi Kawashima

    IPC分类号： G02B27/00 ,  H01L27/14 ,  H01L27/148 ,  H04N5/335 ,  H04N5/359 ,  H04N5/372

    CPC分类号： H01L27/14806 ,  H01L27/14627 ,  H01L27/14831

    摘要： A solid-state imaging device includes a semiconductor substrate in which an element part including a plurality of light responsive elements for generating charge carriers in response to incident light and a transfer part for transferring the charge carriers generated in each light responsive element are incorporated; a lens layer is disposed on the element part so that incident light is collected in the light responsive elements; and a light beam dispersion layer is disposed between the lens layer and the element part and includes two light transmissive layers having different refractive indices for dispersing light collected by the lens layer so that collected light entering respective light responsive elements is closer to a parallel beam than the incident light. By suppressing broadening of incident light in the semiconductor substrate at the light responsive elements, fewer charge carriers enter the CCD channel region and smear is reduced.

    摘要翻译： 固态成像装置包括：半导体衬底，其中包含元件部分，其包括响应于入射光而产生电荷载流子的多个光响应元件和用于转移在每个光响应元件中产生的电荷载流子的转移部分; 透镜层设置在元件部分上，使得入射光被收集在光响应元件中; 并且光束分散层设置在透镜层和元件部分之间，并且包括具有不同折射率的两个透光层，用于分散由透镜层收集的光，使得进入各个光响应元件的收集光更接近平行光束 事件光。 通过抑制在光响应元件处的半导体衬底中的入射光的增宽，较少的电荷载流子进入CCD通道区域并且减少了涂片。

    PLC-type delay demodulation circuit and PLC-type optical interferometer
    77.
    发明授权
    PLC-type delay demodulation circuit and PLC-type optical interferometer 失效
    PLC型延时解调电路和PLC型光干涉仪

    公开(公告)号：US08477409B2

    公开(公告)日：2013-07-02

    申请号：US13614692

    申请日：2012-09-13

    申请人： Hiroshi Kawashima ,  Kazutaka Nara ,  Kohei Shibata

    发明人： Hiroshi Kawashima ,  Kazutaka Nara ,  Kohei Shibata

    IPC分类号： G02F2/00 ,  G02F1/035

    CPC分类号： G02B6/2861 ,  G02B6/29355 ,  G02F1/225 ,  G02F2001/212 ,  H04B10/677

    摘要： Disclosed are a PLC-type delay demodulation circuit and a PLC-type optical interferometer capable of reducing the size of a PLC chip with respect to the arrangement of various kinds of light output waveguides. In a PLC-type delay demodulation circuit, arm waveguides of a first MZI and arm waveguides of a second MZI are formed so as to overlap each other in the same region of a planar lightwave circuit. The optical paths of the MZIs are arranged such that the propagation directions of two DQPSK signals branched by a Y-branch waveguide are opposite to each other.

    摘要翻译： 公开了能够相对于各种光输出波导的布置来减小PLC芯片的尺寸的PLC型延迟解调电路和PLC型光干涉仪。 在PLC型延迟解调电路中，第一MZI的臂波导和第二MZI的臂波导形成为在平面光波电路的相同区域中彼此重叠。 MZI的光路被布置成使得由Y分支波导分支的两个DQPSK信号的传播方向彼此相反。

    PLC-type delay demodulation circuit
    78.
    发明授权
    PLC-type delay demodulation circuit 失效
    PLC型延时解调电路

    公开(公告)号：US08422118B2

    公开(公告)日：2013-04-16

    申请号：US13333432

    申请日：2011-12-21

    申请人： Hiroshi Kawashima ,  Kazutaka Nara

    发明人： Hiroshi Kawashima ,  Kazutaka Nara

    IPC分类号： G02F2/00

    CPC分类号： G02F2/00 ,  G02B6/2861 ,  G02B6/2935 ,  G02F1/225 ,  H04B10/677

    摘要： A PLC-type delay demodulation circuit includes a planar lightwave circuit that is provided on one PLC chip and demodulates a DQPSK signal. The planar lightwave circuit includes a Y-branch waveguide that branches a DQPSK-modulated optical signal into two optical signals and first and second MZIs that delay the branched optical signals by one bit. The length of a short arm waveguide of the first MZI is different from the length of a short arm waveguide of the second MZI, and the length of an optical path from the Y-branch waveguide to output ports of the first MZI through the short arm waveguide of the first MZI is equal to that of an optical path from the Y-branch waveguide to output ports of the second MZI through the short arm waveguide of the second MZI.

    摘要翻译： PLC型延迟解调电路包括设置在一个PLC芯片上并解调DQPSK信号的平面光波电路。 平面光波电路包括将DQPSK调制的光信号分成两个光信号的Y分支波导和将分支光信号延迟一位的第一和第二MZI。 第一MZI的短臂波导的长度不同于第二MZI的短臂波导的长度，以及从Y分支波导到通过短臂的第一MZI的输出端口的光路的长度 第一MZI的波导与通过第二MZI的短臂波导从Y分支波导到第二MZI的输出端口的光路的波导相同。

    Manufacturing method for semiconductor integrated circuit device
    80.
    发明授权
    Manufacturing method for semiconductor integrated circuit device 有权
    半导体集成电路器件的制造方法

    公开(公告)号：US07871871B2

    公开(公告)日：2011-01-18

    申请号：US12393087

    申请日：2009-02-26

    申请人： Masanobu Hishiki ,  Yaichiro Miura ,  Hiroshi Kawashima ,  Katsuhiro Mitsuda

    发明人： Masanobu Hishiki ,  Yaichiro Miura ,  Hiroshi Kawashima ,  Katsuhiro Mitsuda

    IPC分类号： H01L21/66

    CPC分类号： H01L21/26513 ,  H01L21/26586 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823842 ,  H01L22/12 ,  H01L29/1083 ,  H01L2924/0002 ,  H01L2924/00

    摘要： In mass production of CMIS integrated circuit devices or the like, electric characteristics, such as Vth (threshold voltage) or the like, disadvantageously vary due to variations in gate length of the MISFET. This problem has become serious because of a short channel effect. In order to solve the problem, various kinds of feed-forward techniques have been studied in which a subsequent variation factor process is regulated to be reversed with respect to variations in a previous variation factor process so as to cause these variation factors to cancel each other out. Since the feed-back technique has an effect of the cancellation process over the entire system, the technique can be relatively easily applied to a product with a single type of MISFE, but is difficult to be applied to a product equipped with a plurality of types of MISFETs. The invention is adapted to adjust the amount of halo implantation by multivariate analysis based on the result of a patterning step of the gate electrode and a film forming step of an offset spacer.

    摘要翻译： 在大规模生产CMIS集成电路器件等时，诸如Vth（阈值电压）等的电特性由于MISFET的栅极长度的变化而不利地变化。 这个问题已经变得严重，因为通道效应很短。 为了解决这个问题，已经研究了各种前馈技术，其中随后的变化因子过程被调整为相对于先前的变化因子过程的变化而被反转，以使这些变化因子相互抵消 出来 由于反馈技术具有整个系统的取消处理的效果，因此该技术可以相对容易地应用于具有单一类型的MISFE的产品，但是难以应用于配备有多种类型的产品 的MISFETs。 本发明适用于基于栅电极的图案形成步骤和偏移间隔物的成膜步骤的结果，通过多元分析来调整光晕注入量。