公开(公告)号：US07477353B2

公开(公告)日：2009-01-13

申请号：US11174722

申请日：2005-07-06

申请人： Shinichi Ito ,  Tsuyoshi Shibata

发明人： Shinichi Ito ,  Tsuyoshi Shibata

IPC分类号： G03B27/42 ,  G03B27/52 ,  G03B27/32 ,  G03F7/00

CPC分类号： G03F7/70991 ,  G03F7/70341 ,  G03F7/70858 ,  G03F7/70916 ,  G03F7/70925

摘要： A lithography apparatus includes a resist processing apparatus to perform a process of applying a resist on a substrate, a process of heating a resist film on the substrate, and a process of developing the resist film on the substrate, an immersion exposure apparatus including a projection optical system which projects an image of a pattern on a photomask onto the resist film and configured to perform exposure through liquid located on an optical path between the projection optical system and resist film, a transporting apparatus connected to the resist processing and immersion exposure apparatuses to perform transportation of the substrate between the resist processing and immersion exposure apparatuses, and a temperature/humidity control apparatus configured to control at least one of temperature and humidity in at least one of the resist processing and transporting apparatuses based on temperature and humidity or the in humidity the immersion exposure apparatus.

摘要翻译： 光刻设备包括：抗蚀剂处理设备，用于执行在基板上施加抗蚀剂的工艺;加热基板上的抗蚀剂膜的工艺;以及在基板上显影抗蚀剂膜的工艺;浸渍曝光设备，包括：投影 光学系统，其将光掩模上的图案的图像投影到抗蚀剂膜上，并且被配置为通过位于投影光学系统和抗蚀剂膜之间的光路上的液体进行曝光，连接到抗蚀剂处理和浸没曝光装置的传送装置 在抗蚀剂处理和浸没曝光装置之间执行基板的传送，以及温度/湿度控制装置，其被配置为基于温度和湿度控制至少一个抗蚀剂处理和输送装置中的温度和湿度， 湿度浸渍曝光设备。

公开(公告)号：US07311383B2

公开(公告)日：2007-12-25

申请号：US11085126

申请日：2005-03-22

申请人： Makoto Akahira ,  Satoshi Wada ,  Yoshitomo Marumoto ,  Tsuyoshi Shibata

发明人： Makoto Akahira ,  Satoshi Wada ,  Yoshitomo Marumoto ,  Tsuyoshi Shibata

IPC分类号： B41J2/15 ,  B41J2/145

CPC分类号： B41J2/04573 ,  B41J2/0458 ,  B41J2/04581 ,  B41J2/145 ,  B41J2202/20

摘要： The invention has an object to provide a liquid discharge recording method and a liquid discharge recording apparatus capable of outputting images at high speed with high quality and high reliability, and has a feature in that when adjacent overlapping dots are formed on a print material, the dots are formed with a dot placement time difference that may reduce uneven optical densities of the overlapping portion of the dots.

摘要翻译： 本发明的目的是提供一种能够以高质量和高可靠性高速输出图像的液体排出记录方法和液体排出记录装置，其特征在于当在打印材料上形成相邻的重叠点时， 点形成具有可以减小点的重叠部分的不均匀光密度的点放置时间差。

公开(公告)号：US07235490B2

公开(公告)日：2007-06-26

申请号：US10788216

申请日：2004-02-27

申请人： Yasuhiko Sato ,  Seiji Nakagawa ,  Jun Idebuchi ,  Motoya Kishida ,  Shuichi Taniguchi ,  Tsuyoshi Shibata

发明人： Yasuhiko Sato ,  Seiji Nakagawa ,  Jun Idebuchi ,  Motoya Kishida ,  Shuichi Taniguchi ,  Tsuyoshi Shibata

IPC分类号： H01L21/311

CPC分类号： H01L21/31144 ,  G03F7/09 ,  H01L21/0332

摘要： A method of manufacturing a semiconductor device comprises preparing a working film to be processed, forming an adhesion improving region on the working film for increasing an adhesion between the working film and a mask material containing carbon, forming the mask material on the working film, forming a resist pattern on the mask material, the mask material having a higher etching resistance for the working film than the resist pattern, transferring the pattern of the resist pattern onto the mask material, and etching the working film by using the mask material as a mask.

摘要翻译： 一种制造半导体器件的方法包括：制备待加工的工作薄膜，在工作薄膜上形成粘合改善区域，以增加工作薄膜和含有碳的掩模材料之间的粘附力，在工作薄膜上形成掩模材料，形成 在掩模材料上的抗蚀剂图案，掩模材料对抗蚀剂图案具有比工作膜更高的耐蚀刻性，将抗蚀剂图案的图案转印到掩模材料上，并且通过使用掩模材料作为掩模来蚀刻工作膜 。

公开(公告)号：US20060289431A1

公开(公告)日：2006-12-28

申请号：US11411139

申请日：2006-04-26

申请人： Kei Hayasaki ,  Tsuyoshi Shibata ,  Koutarou Sho ,  Shinichi Ito

发明人： Kei Hayasaki ,  Tsuyoshi Shibata ,  Koutarou Sho ,  Shinichi Ito

IPC分类号： F27B5/14 ,  F27D11/00

CPC分类号： F27B17/0025 ,  F27B5/04 ,  F27D3/0084 ,  H01L21/67109

摘要： According to an aspect of the invention, there is provided a single substrate processing method which continuously heats substrates to be processed to which films containing solvents are applied, by use of a heating apparatus having an opening/closing mechanism, including supplying a gas containing a solvent contained in a film of a first substrate to be processed into the heating apparatus in a closed state of the opening/closing mechanism between processing of the first substrate to be processed and processing of a second substrate to be processed.

摘要翻译： 根据本发明的一个方面，提供了一种单一的基板处理方法，其通过使用具有打开/关闭机构的加热装置连续加热待加工的含有溶剂的薄膜的基板处理方法，该加热装置包括供给含有 在待处理的第一基板的处理和待处理的第二基板的处理之间的打开/关闭机构的闭合状态下，加热到加热装置的第一基板的膜中所含的溶剂。

公开(公告)号：US20060276449A1

公开(公告)日：2006-12-07

申请号：US10569833

申请日：2004-08-27

申请人： Toshihito Kumagai ,  Takeshi Kuwada ,  Tsuyoshi Shibata ,  Masato Hayashi ,  Yuri Fujisawa ,  Yoshinori Sekiguchi

发明人： Toshihito Kumagai ,  Takeshi Kuwada ,  Tsuyoshi Shibata ,  Masato Hayashi ,  Yuri Fujisawa ,  Yoshinori Sekiguchi

IPC分类号： A61K31/404 ,  C07D403/14 ,  C07D403/04

CPC分类号： C07D403/04

摘要： A 1,3-dihydro-2H-indol-2-one derivative expressed by Formula 1 (wherein R1 is a halogen atom, a C1 to C4 alkyl group, etc., and R2 is a hydrogen atom, a halogen atom, etc., or R2 is in the 6-position of the indol-2-one and R1 and R2 join together to form a C3 to C6 alkylene group, R3 is a halogen atom, a hydroxyl group, etc., and R4 is a hydrogen atom, a halogen atom, a C1 to C4 alkyl group, etc., or R4 is in the 3-position of the phenyl and R3 and R4 join together to form a methylenedioxy group, R5 is a hydrogen atom or a fluorine atom, R6 is an ethylamino group, a dimethylamino group, etc., R7 is a C1 to C4 alkoxy group, and R8 is a C1 to C4 alkoxy group), or a pharmaceutically acceptable salt of this derivative. This is a novel compound that has antagonistic activity against an aruginine-vasopressin V1b receptor.

摘要翻译： 由式1表示的1,3-二氢-2H-吲哚-2-酮衍生物（其中R 1是卤素原子，C 1至C 1烷基， 4个烷基等，R 2是氢原子，卤原子等，或R 2 2位在6位的 吲哚-2-酮和R 1和R 2连接在一起以形成C 6 -C 6亚烷基， 亚烷基，R 3是卤素原子，羟基等，R 4是氢原子，卤原子，C 1， / SUB→C 4烷基等，或R 4在苯基的3位和R 3和R 3 连接在一起形成亚甲二氧基，R 5是氢原子或氟原子，R 6是乙氨基，二甲基氨基 基团等，R 7是C 1-4烷氧基的C 1至C 8，并且R 8是 C 1至C 4烷氧基），或该衍生物的药学上可接受的盐。 这是一种新的化合物，具有对抗葡萄糖酸加压素V1b受体的拮抗作用。

公开(公告)号：US20060119660A1

公开(公告)日：2006-06-08

申请号：US11295501

申请日：2005-12-07

申请人： Takashi Ochiai ,  Tsuyoshi Shibata ,  Hiromitsu Yamaguchi ,  Eri Goto

发明人： Takashi Ochiai ,  Tsuyoshi Shibata ,  Hiromitsu Yamaguchi ,  Eri Goto

IPC分类号： B41J2/15

CPC分类号： B41J2/04541 ,  B41J2/04543 ,  B41J2/0458 ,  B41J2/04581 ,  B41J2002/14459

摘要： An inkjet printing apparatus which performs time-divisional driving poses the following problem when halftoning control by the unit matrix is performed for at least some gray levels. More specifically, the shape of a dot cluster in each unit matrix periodically changes owing to the mismatch between the unit matrix size and the unit section size of time-divisional driving. The periodical change stands out as periodical density unevenness to the eye, degrading the image quality. In order to solve this problem, according to this invention, the unit matrix size and the unit section size of time-divisional driving are determined so that unit matrices have the same shape. More specifically, the unit section size of time-divisional driving and the unit matrix size in the nozzle array direction are set to (unit section size of time-divisional driving)×n=(unit matrix size in nozzle array direction) (n is a natural number). This setting prevents periodical generation of density unevenness and achieves high image quality.

摘要翻译： 执行时分驱动的喷墨打印装置在对至少一些灰度级进行单位矩阵的半色调控制时，产生以下问题。 更具体地，由于单位矩阵尺寸和时分驱动的单位部分尺寸之间的不匹配，每个单位矩阵中的点簇的形状周期性地变化。 周期性变化突出于眼睛周期性密度不均匀，降低图像质量。 为了解决这个问题，根据本发明，确定单位矩阵尺寸和时分驱动的单位截面尺寸，使单位矩阵具有相同的形状。 更具体地说，将分时驱动的单位部分尺寸和喷嘴排列方向的单位矩阵尺寸设定为（分时驱动的单位截面尺寸）×n =（喷嘴排列方向的单位矩阵尺寸）（n为 自然数）。 该设置可以防止定期产生浓度不均匀并实现高图像质量。

公开(公告)号：US07000215B2

公开(公告)日：2006-02-14

申请号：US10642266

申请日：2003-08-18

申请人： Ayako Nakano ,  Koji Hashimoto ,  Takashi Sato ,  Tsuyoshi Shibata ,  Yuji Kobayashi

发明人： Ayako Nakano ,  Koji Hashimoto ,  Takashi Sato ,  Tsuyoshi Shibata ,  Yuji Kobayashi

IPC分类号： G06F17/50

CPC分类号： G03F1/36 ,  G03F7/70433 ,  G03F7/705

摘要： A method of designing patterns has preparing a mask pattern used in a lithography process for transferring a circuit pattern intersecting with a step pattern on a substrate which has the step pattern designed thereon, and applying correction patterns to the mask pattern in accordance with correction rules considering a shape of the step pattern, the correction patterns being applied at intersections of edges of the circuit pattern and the step pattern and in the vicinity of the intersections.

摘要翻译： 设计图案的方法制备了在光刻工艺中使用的掩模图案，用于将具有阶梯图案的台阶图案相交的电路图案转印到具有设计在其上的台阶图案的基板上，并且根据考虑到的校正规则将校正图案应用于掩模图案 台阶图案的形状，校正图案被应用在电路图案和台阶图案的边缘的交点处和交叉点附近。

公开(公告)号：US5744293A

公开(公告)日：1998-04-28

申请号：US821412

申请日：1997-03-21

申请人： Katsuya Okumura ,  Tsuyoshi Shibata

发明人： Katsuya Okumura ,  Tsuyoshi Shibata

IPC分类号： G02B1/11 ,  G03F7/09 ,  H01L21/027 ,  G03F7/11 ,  G03C1/825

CPC分类号： G03F7/091

摘要： This invention relates to an antireflective layer (ARL) which has both good absorption capability and low reflectivity at the photoresist/ARL interface. The ARL also significantly reduces CD variation in exposed photoresist film. The ARL of the present invention comprises an organic base resin having fine carbon particles dispersed therein. The combination of the organic base resin and fine carbon particles provide both good absorption and low reflectivity. The present invention is also related to a process of forming a semiconductor by applying an antireflection layer to the surface of a substrate, forming a photoresist layer on the antireflection layer, and selectively exposing the substrate to ultraviolet light, wherein the antireflective layer is an organic resin having carbon particles dispersed therein.

摘要翻译： 本发明涉及在光致抗蚀剂/ ARL界面处具有良好吸收能力和低反射率的抗反射层（ARL）。 ARL还显着降低了曝光光刻胶膜中的CD变化。 本发明的ARL包含分散有细小碳粒子的有机基础树脂。 有机基础树脂和细小颗粒的组合提供良好的吸收和低反射率。 本发明还涉及通过在基板的表面上施加抗反射层来形成半导体的方法，在抗反射层上形成光致抗蚀剂层，并且将基板选择性地暴露于紫外光，其中抗反射层是有机的 具有分散在其中的碳粒子的树脂。

公开(公告)号：US5475515A

公开(公告)日：1995-12-12

申请号：US232411

申请日：1994-04-25

申请人： Kazuo Yoshinaga ,  Ryoji Fujiwara ,  Yomishi Toshida ,  Toshikazu Ohnishi ,  Koichi Sato ,  Takeo Eguchi ,  Tsuyoshi Shibata

发明人： Kazuo Yoshinaga ,  Ryoji Fujiwara ,  Yomishi Toshida ,  Toshikazu Ohnishi ,  Koichi Sato ,  Takeo Eguchi ,  Tsuyoshi Shibata

IPC分类号： G02F1/1333 ,  C09K19/54 ,  G02F1/1334 ,  G02F1/1347 ,  G02F1/136 ,  G02F1/1368 ,  G02F1/13 ,  G02F1/133

CPC分类号： C09K19/544 ,  G02F1/1333 ,  G02F1/1334 ,  G02F1/1347 ,  G02F2001/13345

摘要： The liquid crystal device is constituted by disposing a display layer between a pair of electrode plates. The display layer comprises a stretched porous polymer film having open pores and a low-molecular weight mesomorphic compound impregnating the polymer film. The display layer further comprises a porous polymer film having a three dimensional network structure characterized by a fibril diameter of at most 0.3 micron, and a low-molecular weight mesomorphic compound impregnating the polymer film. The display layer still further comprises a first display layer comprising a porous film and a low-molecular weight mesomorphic compound impregnating the porous film, and a second display layer comprising the low-molecular weight mesomorphic compound.

摘要翻译： 液晶装置通过在一对电极板之间设置显示层而构成。 显示层包括具有开孔的拉伸多孔聚合物膜和浸渍聚合物膜的低分子量介晶化合物。 显示层还包括具有特征在于至多0.3微米的原纤维直径的三维网状结构的多孔聚合物膜和浸渍聚合物膜的低分子量介晶化合物。 显示层还包括包含多孔膜和浸渍多孔膜的低分子量介晶化合物的第一显示层和包含低分子量介晶化合物的第二显示层。

公开(公告)号：US5468576A

公开(公告)日：1995-11-21

申请号：US853436

申请日：1992-03-18

申请人： Tsuyoshi Shibata ,  Koji Hashimoto ,  Katsuhiko Hieda

发明人： Tsuyoshi Shibata ,  Koji Hashimoto ,  Katsuhiko Hieda

IPC分类号： G03F1/29 ,  G03F1/34 ,  G03F1/68 ,  G03F1/80 ,  H01L21/027 ,  H01L21/30 ,  G03F9/00

CPC分类号： G03F1/30 ,  G03F1/29

摘要： A method for manufacturing an exposure mask provided with a substrate for transmitting an exposure light and with phase shifters arranged at prescribed intervals on the substrate for shifting the phase of the exposure light transmitted through the substrate by a half wavelength as compared with the phase of the exposure light transmitted through both the substrate and an opening between the phase shifters consists of the steps of preparing a solution containing a phase shifter material, arranging resist layers at the prescribed intervals on the substrate, immersing the substrate with the resist layers in the solution, forming the phase shifters on the substrate between the resist layers by a prescribed thickness by depositing the material of the phase shifter from the solution, and removing the resist layers from the substrate to form the openings.

摘要翻译： 一种制造曝光掩模的方法，该曝光掩模具有用于透射曝光光的基板和在基板上以规定间隔布置的移相器，用于将透过该基板的曝光光的相位与第二波长的相位相比移动一半波长 透过基板和移相器之间的开口的曝光光由以下步骤组成：制备含有移相材料的溶液，在基板上以规定的间隔配置抗蚀剂层，将基板与抗蚀剂层浸入溶液中， 通过从溶液中沉积移相器的材料，在基板上形成位于抗蚀剂层之间的相移规定厚度的移相器，以及从基板去除抗蚀剂层以形成开口。