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    Method of manufacturing semiconductor device
    1.
    发明授权
    Method of manufacturing semiconductor device 有权
    制造半导体器件的方法

    公开(公告)号：US07235490B2

    公开(公告)日：2007-06-26

    申请号：US10788216

    申请日：2004-02-27

    申请人： Yasuhiko Sato ,  Seiji Nakagawa ,  Jun Idebuchi ,  Motoya Kishida ,  Shuichi Taniguchi ,  Tsuyoshi Shibata

    发明人： Yasuhiko Sato ,  Seiji Nakagawa ,  Jun Idebuchi ,  Motoya Kishida ,  Shuichi Taniguchi ,  Tsuyoshi Shibata

    IPC分类号： H01L21/311

    CPC分类号： H01L21/31144 ,  G03F7/09 ,  H01L21/0332

    摘要： A method of manufacturing a semiconductor device comprises preparing a working film to be processed, forming an adhesion improving region on the working film for increasing an adhesion between the working film and a mask material containing carbon, forming the mask material on the working film, forming a resist pattern on the mask material, the mask material having a higher etching resistance for the working film than the resist pattern, transferring the pattern of the resist pattern onto the mask material, and etching the working film by using the mask material as a mask.

    摘要翻译： 一种制造半导体器件的方法包括：制备待加工的工作薄膜，在工作薄膜上形成粘合改善区域，以增加工作薄膜和含有碳的掩模材料之间的粘附力，在工作薄膜上形成掩模材料，形成 在掩模材料上的抗蚀剂图案，掩模材料对抗蚀剂图案具有比工作膜更高的耐蚀刻性，将抗蚀剂图案的图案转印到掩模材料上，并且通过使用掩模材料作为掩模来蚀刻工作膜 。

    Method of manufacturing semiconductor device
    3.
    发明授权
    Method of manufacturing semiconductor device 有权
    制造半导体器件的方法

    公开(公告)号：US07045417B2

    公开(公告)日：2006-05-16

    申请号：US11061531

    申请日：2005-02-22

    申请人： Yoshio Kasai ,  Miki Kawase ,  Takashi Suzuki ,  Motoya Kishida

    发明人： Yoshio Kasai ,  Miki Kawase ,  Takashi Suzuki ,  Motoya Kishida

    IPC分类号： H01L21/8242

    CPC分类号： H01L27/10829 ,  H01L27/10867

    摘要： A method of manufacturing a semiconductor device, which comprises forming a first semiconductor film on a surface of a semiconductor substrate, adsorbing a first impurity on a surface of the first semiconductor film, adsorbing a second impurity on the surface of the first semiconductor film, forming a second semiconductor film on the surface of the first semiconductor film, and solid-phase-diffusing the first impurity and the second impurity into a region of the semiconductor substrate which is located adjacent to the first and second semiconductor films to thereby form a first diffusion region containing the first impurity and a second diffusion region containing the second impurity, a concentration of the first impurity in the first diffusion region being higher than that of the second impurity in the second diffusion region, and the first diffusion region having the bottom thereof covered by the second diffusion region.

    摘要翻译： 一种制造半导体器件的方法，包括在半导体衬底的表面上形成第一半导体膜，在第一半导体膜的表面上吸附第一杂质，在第一半导体膜的表面上吸附第二杂质，形成 在所述第一半导体膜的表面上的第二半导体膜，并且将所述第一杂质和所述第二杂质固相扩散到所述半导体衬底的与所述第一和第二半导体膜相邻的区域中，从而形成第一扩散 含有第一杂质的区域和含有第二杂质的第二扩散区域，第一扩散区域中的第一杂质的浓度高于第二扩散区域中的第二杂质浓度，第一扩散区域的底部被覆盖 通过第二扩散区域。

    Method of manufacturing semiconductor device
    6.
    发明申请
    Method of manufacturing semiconductor device 有权
    制造半导体器件的方法

    公开(公告)号：US20050196914A1

    公开(公告)日：2005-09-08

    申请号：US11061531

    申请日：2005-02-22

    申请人： Yoshio Kasai ,  Miki Kawase ,  Takashi Suzuki ,  Motoya Kishida

    发明人： Yoshio Kasai ,  Miki Kawase ,  Takashi Suzuki ,  Motoya Kishida

    IPC分类号： H01L27/108 ,  H01L21/8234 ,  H01L21/8242

    CPC分类号： H01L27/10829 ,  H01L27/10867

    摘要： A method of manufacturing a semiconductor device, which comprises forming a first semiconductor film on a surface of a semiconductor substrate, adsorbing a first impurity on a surface of the first semiconductor film, adsorbing a second impurity on the surface of the first semiconductor film, forming a second semiconductor film on the surface of the first semiconductor film, and solid-phase-diffusing the first impurity and the second impurity into a region of the semiconductor substrate which is located adjacent to the first and second semiconductor films to thereby form a first diffusion region containing the first impurity and a second diffusion region containing the second impurity, a concentration of the first impurity in the first diffusion region being higher than that of the second impurity in the second diffusion region, and the first diffusion region having the bottom thereof covered by the second diffusion region.

    摘要翻译： 一种制造半导体器件的方法，包括在半导体衬底的表面上形成第一半导体膜，在第一半导体膜的表面上吸附第一杂质，在第一半导体膜的表面上吸附第二杂质，形成 在所述第一半导体膜的表面上的第二半导体膜，并且将所述第一杂质和所述第二杂质固相扩散到所述半导体衬底的与所述第一和第二半导体膜相邻的区域中，从而形成第一扩散 含有第一杂质的区域和含有第二杂质的第二扩散区域，第一扩散区域中的第一杂质的浓度高于第二扩散区域中的第二杂质浓度，第一扩散区域的底部被覆盖 通过第二扩散区域。