公开(公告)号：US20110212571A1

公开(公告)日：2011-09-01

申请号：US13104551

申请日：2011-05-10

申请人： Shunpei YAMAZAKI ,  Junichiro SAKATA ,  Jun KOYAMA

发明人： Shunpei YAMAZAKI ,  Junichiro SAKATA ,  Jun KOYAMA

IPC分类号： H01L21/363

CPC分类号： H01L29/7869 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L27/1225 ,  H01L27/124 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/78696

摘要： A semiconductor device which includes a thin film transistor having an oxide semiconductor layer and excellent electrical characteristics is provided. Further, a method for manufacturing a semiconductor device in which plural kinds of thin film transistors of different structures are formed over one substrate to form plural kinds of circuits and in which the number of steps is not greatly increased is provided. After a metal thin film is formed over an insulating surface, an oxide semiconductor layer is formed thereover. Then, oxidation treatment such as heat treatment is performed to oxidize the metal thin film partly or entirely. Further, structures of thin film transistors are different between a circuit in which emphasis is placed on the speed of operation, such as a logic circuit, and a matrix circuit.

公开(公告)号：US20110198585A1

公开(公告)日：2011-08-18

申请号：US13096088

申请日：2011-04-28

申请人： Shunpei YAMAZAKI ,  Junichiro SAKATA ,  Ryoji NOMURA

发明人： Shunpei YAMAZAKI ,  Junichiro SAKATA ,  Ryoji NOMURA

IPC分类号： H01L33/02

CPC分类号： H01L51/52 ,  H01L51/5048 ,  Y10S428/917

摘要： It is an object of the present invention to provide a light emitting element with a low driving voltage. In a light emitting element, a first electrode; and a first composite layer, a second composite layer, a light emitting layer, an electron transporting layer, an electron injecting layer, and a second electrode, which are stacked over the first electrode, are included. The first composite layer and the second composite layer each include metal oxide and an organic compound. A concentration of metal oxide in the first composite layer is higher than a concentration of metal oxide in the second composite layer, whereby a light emitting element with a low driving voltage can be obtained. Further, the composite layer is not limited to a two-layer structure. A multi-layer structure can be employed. However, a concentration of metal oxide in the composite layer is gradually higher from the light emitting layer to first electrode side.

摘要翻译： 本发明的目的是提供一种具有低驱动电压的发光元件。 在发光元件中，第一电极; 并且包括层叠在第一电极上的第一复合层，第二复合层，发光层，电子传输层，电子注入层和第二电极。 第一复合层和第二复合层各自包括金属氧化物和有机化合物。 第一复合层中的金属氧化物的浓度高于第二复合层中的金属氧化物的浓度，由此可以获得具有低驱动电压的发光元件。 此外，复合层不限于两层结构。 可以采用多层结构。 然而，复合层中的金属氧化物的浓度从发光层逐渐变高到第一电极侧。

公开(公告)号：US20110136302A1

公开(公告)日：2011-06-09

申请号：US12957746

申请日：2010-12-01

申请人： Shunpei YAMAZAKI ,  Junichiro SAKATA ,  Hiroki OHARA

发明人： Shunpei YAMAZAKI ,  Junichiro SAKATA ,  Hiroki OHARA

IPC分类号： H01L21/336 ,  H01L21/225

CPC分类号： H01L29/7831 ,  H01L21/28176 ,  H01L21/324 ,  H01L29/4966 ,  H01L29/66969 ,  H01L29/78642 ,  H01L29/7869

摘要： A semiconductor device for high power application in which a novel semiconductor material having high mass productivity is provided. An oxide semiconductor film is formed, and then, first heat treatment is performed on the exposed oxide semiconductor film in order to reduce impurities such as moisture or hydrogen in the oxide semiconductor film. Next, in order to further reduce impurities such as moisture or hydrogen in the oxide semiconductor film, oxygen is added to the oxide semiconductor film by an ion implantation method, an ion doping method, or the like, and after that, second heat treatment is performed on the exposed oxide semiconductor film.

公开(公告)号：US20110053322A1

公开(公告)日：2011-03-03

申请号：US12826000

申请日：2010-06-29

申请人： Toshinari SASAKI ,  Junichiro SAKATA ,  Hiroki OHARA ,  Shunpei YAMAZAKI

发明人： Toshinari SASAKI ,  Junichiro SAKATA ,  Hiroki OHARA ,  Shunpei YAMAZAKI

IPC分类号： H01L21/324

CPC分类号： H01L21/02664 ,  H01L21/02565 ,  H01L27/1225 ,  H01L29/66765 ,  H01L29/66969 ,  H01L29/78618 ,  H01L29/7869 ,  H01L29/78696

摘要： An object is to provide a high reliable semiconductor device including a thin film transistor having stable electric characteristics. In a method for manufacturing a semiconductor device including a thin film transistor in which an oxide semiconductor film is used for a semiconductor layer including a channel formation region, heat treatment (which is for dehydration or dehydrogenation) is performed so as to improve the purity of the oxide semiconductor film and reduce impurities such as moisture. Besides impurities such as moisture existing in the oxide semiconductor film, heat treatment causes reduction of impurities such as moisture existing in the gate insulating layer and those in interfaces between the oxide semiconductor film and films which are provided over and below the oxide semiconductor film and are in contact with the oxide semiconductor film.

摘要翻译： 目的是提供一种包括具有稳定电特性的薄膜晶体管的高可靠性半导体器件。 在包括使用氧化物半导体膜用于包括沟道形成区域的半导体层的薄膜晶体管的半导体器件的制造方法中，进行热处理（其用于脱水或脱氢），以提高纯度 氧化物半导体膜，并且减少诸如水分的杂质。 除了存在于氧化物半导体膜中的水分等杂质外，热处理会导致存在于栅极绝缘层中的杂质，氧化物半导体膜和氧化物半导体膜之间的氧化物半导体膜与膜之间的界面中的杂质的减少， 与氧化物半导体膜接触。

公开(公告)号：US20110027920A1

公开(公告)日：2011-02-03

申请号：US12905568

申请日：2010-10-15

申请人： Shunpei YAMAZAKI ,  Junichiro SAKATA ,  Takashi HAMADA ,  Masaharu NAGAI ,  Yutaka MATSUDA

发明人： Shunpei YAMAZAKI ,  Junichiro SAKATA ,  Takashi HAMADA ,  Masaharu NAGAI ,  Yutaka MATSUDA

IPC分类号： H01L33/00

CPC分类号： H01L27/3258 ,  H01L21/31608 ,  H01L27/3246 ,  H01L27/3276 ,  H01L51/5206 ,  H01L51/5218 ,  H01L51/5246 ,  H01L51/5281 ,  H01L51/529 ,  H01L2251/5315 ,  H01L2251/5323

摘要： An object of the present invention is to realize a light emitting device having low power consumption and high stability, in addition to improve extraction efficiency of light generated in a light emitting element. At least an interlayer insulating film (including a planarizing film), an anode, and a bank covering an edge portion of the anode contain chemically and physically stable silicon oxide, or are made of a material containing silicon oxide as its main component in order to accomplish a light emitting device having high stability. Generation of heat in a light emitting panel can be suppressed in addition to increase in efficiency (luminance/current) of a light emitting panel according to the structure of the present invention. Consequently, synergistic effect on reliability of a light emitting device is obtained.

摘要翻译： 本发明的目的是提供一种具有低功耗和高稳定性的发光器件，同时提高了在发光元件中产生的光的提取效率。 至少层间绝缘膜（包括平坦化膜），阳极和覆盖阳极的边缘部分的堤包含化学和物理稳定的氧化硅，或由含有氧化硅作为其主要成分的材料制成，以便 实现了具有高稳定性的发光器件。 除了根据本发明的结构提高发光面板的效率（亮度/电流）之外，还可以抑制发光面板中的发热。 因此，获得了对发光器件的可靠性的协同效应。

公开(公告)号：US20110012105A1

公开(公告)日：2011-01-20

申请号：US12835117

申请日：2010-07-13

申请人： Shunpei YAMAZAKI ,  Junichiro SAKATA ,  Hiroyuki MIYAKE ,  Hideaki KUWABARA ,  Ikuko KAWAMATA

发明人： Shunpei YAMAZAKI ,  Junichiro SAKATA ,  Hiroyuki MIYAKE ,  Hideaki KUWABARA ,  Ikuko KAWAMATA

IPC分类号： H01L29/786 ,  H01L21/44

CPC分类号： H01L27/1251 ,  G02F1/13454 ,  G02F2201/40 ,  G02F2202/10 ,  H01L27/1225 ,  H01L27/1233

摘要： An object is to increase an aperture ratio of a semiconductor device. The semiconductor device includes a driver circuit portion and a display portion (also referred to as a pixel portion) over one substrate. The driver circuit portion includes a channel-etched thin film transistor for a driver circuit, in which a source electrode and a drain electrode are formed using metal and a channel layer is formed of an oxide semiconductor, and a driver circuit wiring formed using metal. The display portion includes a channel protection thin film transistor for a pixel, in which a source electrode layer and a drain electrode layer are formed using an oxide conductor and a semiconductor layer is formed of an oxide semiconductor, and a display portion wiring formed using an oxide conductor.

摘要翻译： 目的是提高半导体器件的开口率。 半导体器件包括驱动器电路部分和在一个衬底上的显示部分（也称为像素部分）。 驱动器电路部分包括用于驱动电路的沟道蚀刻薄膜晶体管，其中使用金属形成源电极和漏电极，并且沟道层由氧化物半导体形成，以及使用金属形成的驱动电路布线。 显示部分包括用于像素的沟道保护薄膜晶体管，其中使用氧化物导体形成源极电极层和漏极电极层，并且半导体层由氧化物半导体形成;以及显示部分布线，其使用 氧化物导体。

公开(公告)号：US20110003430A1

公开(公告)日：2011-01-06

申请号：US12828468

申请日：2010-07-01

申请人： Shunpei YAMAZAKI ,  Toshinari SASAKI ,  Junichiro SAKATA ,  Hiroki OHARA

发明人： Shunpei YAMAZAKI ,  Toshinari SASAKI ,  Junichiro SAKATA ,  Hiroki OHARA

IPC分类号： H01L21/44

CPC分类号： H01L29/7869 ,  H01L21/67109 ,  H01L21/67115 ,  H01L27/1225

摘要： An object is to provide a highly reliable semiconductor device including a thin film transistor with stable electric characteristics. In a method for manufacturing a semiconductor device including a thin film transistor in which an oxide semiconductor film is used for a semiconductor layer including a channel formation region, impurities such as moisture existing in the gate insulating layer are reduced before formation of the oxide semiconductor film, and then heat treatment (heat treatment for dehydration or dehydrogenation) is performed so as to improve the purity of the oxide semiconductor film and reduce impurities such as moisture. After that, slow cooling is performed in an oxygen atmosphere. Besides impurities such as moisture existing in the gate insulating layer and the oxide semiconductor film, impurities such as moisture existing at interfaces between the oxide semiconductor film and upper and lower films provided in contact therewith are reduced.

摘要翻译： 本发明的目的是提供一种具有稳定电特性的薄膜晶体管的高度可靠的半导体器件。 在制造包括薄膜晶体管的半导体器件的方法中，其中氧化物半导体膜用于包括沟道形成区域的半导体层，在形成氧化物半导体膜之前，存在于栅极绝缘层中的诸如水分的杂质减少 ，然后进行热处理（脱水或脱氢的热处理），以提高氧化物半导体膜的纯度并减少诸如水分的杂质。 之后，在氧气氛中进行缓慢冷却。 除了存在于栅极绝缘层和氧化物半导体膜中的杂质等杂质以外，氧化物半导体膜与与其接触的上下膜之间的界面处存在的诸如水分的杂质减少。

公开(公告)号：US20100244020A1

公开(公告)日：2010-09-30

申请号：US12722795

申请日：2010-03-12

申请人： Junichiro SAKATA ,  Hideyuki KISHIDA ,  Hiroki OHARA ,  Toshinari SASAKI ,  Shunpei YAMAZAKI

发明人： Junichiro SAKATA ,  Hideyuki KISHIDA ,  Hiroki OHARA ,  Toshinari SASAKI ,  Shunpei YAMAZAKI

IPC分类号： H01L29/786 ,  H01L21/34

CPC分类号： H01L29/7869 ,  G09G3/3258 ,  G09G3/3275 ,  G09G2300/0842 ,  G09G2300/0861 ,  G09G2310/0248 ,  G09G2310/0297 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02592 ,  H01L21/02631 ,  H01L27/12 ,  H01L27/1225 ,  H01L27/1288 ,  H01L27/3262 ,  H01L27/3276 ,  H01L29/66969 ,  H01L29/78618

摘要： An object of an embodiment of the present invention is to provide a semiconductor device provided with a thin film transistor which includes an oxide semiconductor layer and has high electric characteristics. The semiconductor device includes a gate electrode over an insulating surface, an oxide semiconductor layer including silicon oxide, an insulating layer between the gate electrode and the oxide semiconductor layer, and source and drain regions between the oxide semiconductor layer including silicon oxide and source and drain electrode layers. The source and drain regions are formed using a degenerate oxide semiconductor material or a degenerate oxynitride material.

摘要翻译： 本发明的一个实施例的目的是提供一种具有薄膜晶体管的半导体器件，该薄膜晶体管包括氧化物半导体层并具有高电特性。 半导体器件包括绝缘表面上的栅电极，包括氧化硅的氧化物半导体层，栅电极和氧化物半导体层之间的绝缘层，以及包括氧化硅的氧化物半导体层和源极和漏极之间的源极和漏极区 电极层。 源区和漏区使用简并氧化物半导体材料或简并氧氮化物材料形成。

公开(公告)号：US20100163867A1

公开(公告)日：2010-07-01

申请号：US12644286

申请日：2009-12-22

申请人： Shunpei YAMAZAKI ,  Junichiro SAKATA

发明人： Shunpei YAMAZAKI ,  Junichiro SAKATA

IPC分类号： H01L29/786 ,  H01L29/12 ,  H01L21/336 ,  H01L21/04

CPC分类号： H01L29/7869 ,  H01L27/1225 ,  H01L29/66969 ,  H01L29/78696

摘要： In a thin film transistor including an oxide semiconductor, an oxide cluster having higher electrical conductance than the oxide semiconductor layer is formed between the oxide semiconductor layer and a gate insulating layer, whereby field effect mobility of the thin film transistor can be increased and increase of off current can be suppressed.

摘要翻译： 在包括氧化物半导体的薄膜晶体管中，在氧化物半导体层和栅极绝缘层之间形成具有比氧化物半导体层更高导电性的氧化物簇，由此可以增加薄膜晶体管的场效应迁移率并增加 关闭电流可以抑制。

公开(公告)号：US20100117073A1

公开(公告)日：2010-05-13

申请号：US12612021

申请日：2009-11-04

申请人： Shunpei YAMAZAKI ,  Junichiro SAKATA ,  Tetsunori MARUYAMA ,  Yuki IMOTO ,  Yuji ASANO ,  Junichi KOEZUKA

发明人： Shunpei YAMAZAKI ,  Junichiro SAKATA ,  Tetsunori MARUYAMA ,  Yuki IMOTO ,  Yuji ASANO ,  Junichi KOEZUKA

IPC分类号： H01L29/786 ,  H01L21/34

CPC分类号： H01L29/66742 ,  C04B35/58 ,  C04B2235/3284 ,  C04B2235/3286 ,  H01L27/1225 ,  H01L29/66969 ,  H01L29/78618 ,  H01L29/7869

摘要： In a thin film transistor which uses an oxide semiconductor, buffer layers containing indium, gallium, zinc, oxygen, and nitrogen are provided between the oxide semiconductor layer and the source and drain electrode layers.

摘要翻译： 在使用氧化物半导体的薄膜晶体管中，在氧化物半导体层和源极和漏极电极层之间设置包含铟，镓，锌，氧和氮的缓冲层。