公开(公告)号：US07498608B2

公开(公告)日：2009-03-03

申请号：US10493137

申请日：2002-10-28

申请人： Shigetoshi Ito ,  Takayuki Yuasa ,  Yoshihiro Ueta ,  Mototaka Taneya ,  Zenpei Tani ,  Kensaku Motoki

发明人： Shigetoshi Ito ,  Takayuki Yuasa ,  Yoshihiro Ueta ,  Mototaka Taneya ,  Zenpei Tani ,  Kensaku Motoki

IPC分类号： H01L33/00

CPC分类号： H01S5/2018 ,  H01L21/02389 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647 ,  H01S5/0207 ,  H01S5/2231 ,  H01S5/3013 ,  H01S5/3202 ,  H01S5/32341 ,  H01S2301/173

摘要： A nitride semiconductor laser device with a reduction in internal crystal defects and an alleviation in stress, and a semiconductor optical apparatus comprising this nitride semiconductor laser device. First, a growth suppressing film against GaN crystal growth is formed on the surface of an n-type GaN substrate equipped with alternate stripes of dislocation concentrated regions showing a high density of crystal defects and low-dislocation regions so as to coat the dislocation concentrate regions. Next, the n-type GaN substrate coated with the growth suppressing film is overlaid with a nitride semiconductor layer by the epitaxial growth of GaN crystals. Further, the growth suppressing film is removed to adjust the lateral distance between a laser waveguide region and the closest dislocation concentrated region to 40 μm or more.

摘要翻译： 一种氮化物半导体激光器件，其具有内部晶体缺陷的减小和应力的缓解，以及包括该氮化物半导体激光器件的半导体光学装置。 首先，在配置有显示高密度晶体缺陷和低位错区域的位错集中区域的交替条纹的n型GaN衬底的表面上形成抗GaN晶体生长的生长抑制膜，从而涂覆位错浓缩区域 。 接下来，通过GaN晶体的外延生长，用生长抑制膜涂覆的n型GaN衬底与氮化物半导体层重叠。 此外，除去生长抑制膜以将激光波导区域和最接近的位错集中区域之间的横向距离调整为40μm以上。

公开(公告)号：US07462882B2

公开(公告)日：2008-12-09

申请号：US10831659

申请日：2004-04-26

申请人： Yoshihiro Ueta ,  Teruyoshi Takakura ,  Takeshi Kamikawa ,  Yuhzoh Tsuda ,  Shigetoshi Ito ,  Takayuki Yuasa ,  Mototaka Taneya ,  Kensaku Motoki

发明人： Yoshihiro Ueta ,  Teruyoshi Takakura ,  Takeshi Kamikawa ,  Yuhzoh Tsuda ,  Shigetoshi Ito ,  Takayuki Yuasa ,  Mototaka Taneya ,  Kensaku Motoki

IPC分类号： H01L27/15

CPC分类号： B82Y20/00 ,  H01S5/0207 ,  H01S5/2201 ,  H01S5/3202 ,  H01S5/34333 ,  H01S2304/12

摘要： A nitride semiconductor laser device has a nitride semiconductor substrate that includes a dislocation-concentrated region 102 and a wide low-dislocation region and that has the top surface thereof slanted at an angle in the range of 0.3° to 0.7° relative to the C plane and a nitride semiconductor layer laid on top thereof. The nitride semiconductor layer has a depression immediately above the dislocation-concentrated region, and has, in a region thereof other than the depression, a high-quality quantum well active layer with good flatness and without cracks, a layer that, as is grown, readily exhibits p-type conductivity, and a stripe-shaped laser light waveguide region. The laser light waveguide region is formed above the low-dislocation region. This helps realize a nitride semiconductor laser device that offers a longer life.

摘要翻译： 氮化物半导体激光器件具有氮化物半导体衬底，其包括位错集中区域102和宽低位错区域，并且其顶表面相对于C平面以0.3°至0.7°的范围内的角度倾斜 和位于其顶部的氮化物半导体层。 氮化物半导体层在位错集中区域正上方具有凹陷，并且在除了凹陷以外的区域中具有良好的平坦度且没有裂纹的高质量的量子阱活性层， 易于显示p型导电性，以及条状激光波导区域。 激光波导区域形成在低位错区域的上方。 这有助于实现提供更长寿命的氮化物半导体激光器件。

公开(公告)号：US07177336B2

公开(公告)日：2007-02-13

申请号：US10510324

申请日：2003-03-26

申请人： Mototaka Taneya ,  Yukio Yamasaki ,  Shigetoshi Ito

发明人： Mototaka Taneya ,  Yukio Yamasaki ,  Shigetoshi Ito

IPC分类号： H01S3/03 ,  H01S5/00 ,  H01S5/20 ,  H01S5/323

CPC分类号： H01S5/20

摘要： A semiconductor laser device having a waveguide constructed in a stack of layers including, on a substrate transparent and having a refractive index ns for laser light, a first clad layer of a refractive index nc1, a second clad layer of a refractive index nc2, a third clad layer of a refractive index nc3, a first conductivity type guide layer of a refractive index ng, an active quantum well layer, a second conductivity type guide layer, a second conductivity type clad layer, and a second conductivity type contact layer deposited in this order, wherein the waveguide has an effective refractive index ne, and a relationship of nc2

摘要翻译： 一种半导体激光器件，其具有以堆叠层构成的波导，所述波导包括在透明且具有用于激光的折射率n _{的衬底上的折射率n C 1的第一覆盖层 折射率为n3c2的第二覆盖层，折射率为n3c3的第三覆盖层，折射率为n3c3的第一导电型引导层， 指数n N，有源量子阱层，第二导电型导向层，第二导电型覆盖层和第二导电型接触层，其中波导具有有效的折射率 （N c1，n3，c3，...，n3）的关系，N > N（N N，N，N）满足。}

公开(公告)号：US20060202188A1

公开(公告)日：2006-09-14

申请号：US11435932

申请日：2006-05-18

申请人： Yoshihiro Ueta ,  Teruyoshi Takakura ,  Takeshi Kamikawa ,  Yuhzoh Tsuda ,  Shigetoshi Ito ,  Takayuki Yuasa ,  Mototaka Taneya ,  Kensaku Motoki

发明人： Yoshihiro Ueta ,  Teruyoshi Takakura ,  Takeshi Kamikawa ,  Yuhzoh Tsuda ,  Shigetoshi Ito ,  Takayuki Yuasa ,  Mototaka Taneya ,  Kensaku Motoki

IPC分类号： H01L31/109 ,  H01L29/06 ,  H01L31/0328 ,  H01L31/0336 ,  H01L31/072

CPC分类号： B82Y20/00 ,  H01S5/0207 ,  H01S5/2201 ,  H01S5/3202 ,  H01S5/34333 ,  H01S2304/12

摘要： A nitride semiconductor laser device has a nitride semiconductor substrate that includes a dislocation-concentrated region 102 and a wide low-dislocation region and that has the top surface thereof slanted at an angle in the range of 0.3° to 0.7° relative to the C plane and a nitride semiconductor layer laid on top thereof. The nitride semiconductor layer has a depression immediately above the dislocation-concentrated region, and has, in a region thereof other than the depression, a high-quality quantum well active layer with good flatness and without cracks, a layer that, as is grown, readily exhibits p-type conductivity, and a stripe-shaped laser light waveguide region. The laser light waveguide region is formed above the low-dislocation region. This helps realize a nitride semiconductor laser device that offers a longer life.

公开(公告)号：US20050048682A1

公开(公告)日：2005-03-03

申请号：US10917514

申请日：2004-08-13

申请人： Kunihiro Takatani ,  Shigetoshi Ito ,  Takayuki Yuasa ,  Mototaka Taneya ,  Kensaku Motoki

发明人： Kunihiro Takatani ,  Shigetoshi Ito ,  Takayuki Yuasa ,  Mototaka Taneya ,  Kensaku Motoki

IPC分类号： H01S5/02 ,  H01S5/323 ,  H01L21/00

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01S5/0207 ,  H01S5/2201 ,  H01S5/2231 ,  H01S5/3202 ,  H01S2301/173

摘要： A nitride semiconductor laser device using a group III nitride semiconductor also as a substrate offers excellent operation characteristics and a long laser oscillation life. In a layered structure of a group III nitride semiconductor formed on a GaN substrate, a laser optical waveguide region is formed elsewhere than right above a dislocation-concentrated region extending so as to vertically penetrate the substrate, and electrodes are formed on the top surface of the layered structure and on the bottom surface of the substrate elsewhere than right above or below the dislocation-concentrated region. In a portion of the top surface of the layered structure and in a portion of the bottom surface of the substrate right above and below the dislocation-concentrated region, dielectric layers may be formed to prevent the electrodes from making contact with those regions.

摘要翻译： 也可以使用III族氮化物半导体作为基板的氮化物半导体激光器件具有优异的操作特性和较长的激光振荡寿命。 在形成在GaN衬底上的III族氮化物半导体的分层结构中，激光光波导区域形成在垂直贯穿衬底的位错集中区域的正上方的别处，并且电极形成在 层叠结构，并且位于基底的底表面上，位于位错集中区域正上方或下方。 在层状结构的顶表面的一部分中，并且在位错集中区域的正上方和下方的衬底的底表面的一部分中，可以形成电介质层以防止电极与那些区域接触。

公开(公告)号：US06628249B1

公开(公告)日：2003-09-30

申请号：US09711353

申请日：2000-11-09

申请人： Takeshi Kamikawa ,  Shigetoshi Ito ,  Mototaka Taneya

发明人： Takeshi Kamikawa ,  Shigetoshi Ito ,  Mototaka Taneya

IPC分类号： G09G306

CPC分类号： H05B33/0866 ,  G09G3/14 ,  G09G3/2014 ,  G09G3/2081 ,  G09G3/32 ,  G09G2310/0272 ,  G09G2320/0626 ,  G09G2320/0666 ,  G09G2330/021 ,  H01L2224/48091 ,  H01L2224/49107 ,  H05B33/0818 ,  H05B33/0821 ,  H05B33/086 ,  H01L2924/00014

摘要： A light emitting apparatus comprises a light emitting section for emitting light, a color of the light being changed with a value of a driving current, and a driving section for driving the light emitting section so that the light emitting section emits light having a desired color and a desired intensity, by generating the driving current based on a signal designating the desired color and a signal designating the desired intensity and by applying the driving current to the light emitting section.

摘要翻译： 发光装置包括发光部分，用于发光，光的颜色以驱动电流的值改变;驱动部分，用于驱动发光部分，使得发光部分发出具有所需颜色的光 并且通过基于指定期望颜色的信号和指定期望强度的信号产生驱动电流并且通过将驱动电流施加到发光部分来产生期望的强度。

公开(公告)号：US06493367B1

公开(公告)日：2002-12-10

申请号：US09611424

申请日：2000-07-07

申请人： Shigetoshi Ito ,  Yukio Yamasaki ,  Mototaka Taneya

发明人： Shigetoshi Ito ,  Yukio Yamasaki ,  Mototaka Taneya

IPC分类号： H01S500

CPC分类号： B82Y20/00 ,  G11B7/127 ,  H01S5/005 ,  H01S5/2004 ,  H01S5/3219 ,  H01S5/34333 ,  H01S5/3434 ,  H01S2301/18

摘要： A semiconductor laser device of the present invention includes, in this order: a GaN layer; an Alx1Ga1-x1N (0.05≦x1≦0.2) lower cladding layer; an Iny1Ga1-y1N (0

摘要翻译： 本发明的半导体激光装置依次包括：GaN层; Alx1Ga1-x1N（0.05 <= x1 <= 0.2）下包层; Iny1Ga1-y1N（0

公开(公告)号：US5292685A

公开(公告)日：1994-03-08

申请号：US919665

申请日：1992-07-24

申请人： Kazuhiko Inoguchi ,  Satoshi Sugahara ,  Mototaka Taneya ,  Hiroaki Kudo ,  Chitose Nakanishi ,  Haruhisa Takiguchi

发明人： Kazuhiko Inoguchi ,  Satoshi Sugahara ,  Mototaka Taneya ,  Hiroaki Kudo ,  Chitose Nakanishi ,  Haruhisa Takiguchi

IPC分类号： H01S5/12 ,  H01S5/223 ,  H01L21/203

CPC分类号： H01S5/12 ,  H01S5/1231 ,  H01S5/2231

摘要： In a first crystal growth step, a first cladding layer, an active layer, and an optical wave-guide layer are sequentially grown on a semiconductor substrate. A diffraction grating is formed at a surface of the optical waveguide layer. In a second crystal growth step, a current block layer is grown on the optical waveguide layer having the diffraction grating. The current block layer is selectively etched to expose the diffraction grating and thus to form a stripe groove. In a third crystal growth step, a second cladding layer is grown on the diffraction grating inside the stripe groove and on the current block layer.

摘要翻译： 在第一晶体生长步骤中，在半导体衬底上依次生长第一包层，有源层和光波导层。 衍射光栅形成在光波导层的表面。 在第二晶体生长步骤中，在具有衍射光栅的光波导层上生长电流阻挡层。 选择性地蚀刻当前阻挡层以暴露衍射光栅，从而形成条纹槽。 在第三晶体生长步骤中，第二包覆层生长在条形槽内部和当前阻挡层上的衍射光栅上。

公开(公告)号：US4878223A

公开(公告)日：1989-10-31

申请号：US224558

申请日：1988-07-26

申请人： Taiji Morimoto ,  Hiroyuki Hosoba ,  Mitsuhiro Matsumoto ,  Mototaka Taneya ,  Sadayoshi Matsui

发明人： Taiji Morimoto ,  Hiroyuki Hosoba ,  Mitsuhiro Matsumoto ,  Mototaka Taneya ,  Sadayoshi Matsui

IPC分类号： H01S5/00 ,  H01S5/223 ,  H01S5/40

CPC分类号： H01S5/4031 ,  H01S5/2234

摘要： A semiconductor laser array device comprising a substrate with a plurality of grooves and an active layer disposed over the substrate, resulting in optical waveguides within the active layer corresponding to the grooves, wherein the grooves are disposed over the entire area of the substrate and a means for preventing the injection of current into some of the grooves that are positioned outside of the central area of the substrate is disposed whereby the other grooves positioned in the central area of the substrate constitute a laser array portion of the semiconductor laser array device.

公开(公告)号：US4872174A

公开(公告)日：1989-10-03

申请号：US239301

申请日：1988-09-01

申请人： Sadayoshi Matsui ,  Mototaka Taneya ,  Mitsuhiro Matsumoto ,  Hiroyuki Hosoba ,  Haruhisa Takiguchi ,  Hiroaki Kudo

发明人： Sadayoshi Matsui ,  Mototaka Taneya ,  Mitsuhiro Matsumoto ,  Hiroyuki Hosoba ,  Haruhisa Takiguchi ,  Hiroaki Kudo

IPC分类号： H01S5/00 ,  H01S5/12 ,  H01S5/125 ,  H01S5/20 ,  H01S5/223 ,  H01S5/323 ,  H01S5/40

CPC分类号： H01S5/20 ,  H01S5/125 ,  H01S5/2232 ,  H01S5/12 ,  H01S5/32316 ,  H01S5/4031

摘要： A semiconductor laser device comprises a laminated crystal structure which includes a Ga.sub.1-y Al.sub.y As optical guiding layer and a Ga.sub.1-z Al.sub.z As (z>y) cladding layer in this sequence, the cladding layer is formed on both a Ga.sub.1-x Al.sub.2 As (0.ltoreq.x.ltoreq.0.1 and x

摘要翻译： 半导体激光器件包括依次包括Ga1-yAlyAs光导层和Ga1-zAlzAs（z> y）包覆层的层压晶体结构，在Ga 1-x Al 2 As（z） x <= 0.1和x