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公开(公告)号:US07939435B2
公开(公告)日:2011-05-10
申请号:US12410787
申请日:2009-03-25
申请人: Naoto Kusumoto , Koichiro Tanaka
发明人: Naoto Kusumoto , Koichiro Tanaka
IPC分类号: H01L21/20
CPC分类号: H01L21/268 , B23K26/06 , B23K26/064 , B23K26/0648 , B23K26/0665 , H01L21/02422 , H01L21/02488 , H01L21/02532 , H01L21/02672 , H01L21/02678 , H01L21/02686 , H01L21/02691 , H01L27/1285
摘要: In crystallizing an amorphous silicon film by illuminating it with linear pulse laser beams having a normal-distribution type beam profile or a similar beam profile, the linear pulse laser beams are applied in an overlapped manner. There can be obtained effects similar to those as obtained by a method in which the laser illumination power is gradually increased and then decreased in a step-like manner in plural scans.
摘要翻译: 在通过用具有正态分布型光束轮廓或类似光束轮廓的线性脉冲激光束照射非晶硅膜的结晶中,以重叠的方式施加线性脉冲激光束。 可以获得与通过激光照射功率逐渐增加然后在多次扫描中以阶梯状方式减小的方法获得的效果相似的效果。
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公开(公告)号:US07517774B2
公开(公告)日:2009-04-14
申请号:US11735542
申请日:2007-04-16
申请人: Naoto Kusumoto , Koichiro Tanaka
发明人: Naoto Kusumoto , Koichiro Tanaka
IPC分类号: H01L21/20
CPC分类号: H01L21/268 , B23K26/06 , B23K26/064 , B23K26/0648 , B23K26/0665 , H01L21/02422 , H01L21/02488 , H01L21/02532 , H01L21/02672 , H01L21/02678 , H01L21/02686 , H01L21/02691 , H01L27/1285
摘要: In crystallizing an amorphous silicon film by illuminating it with linear pulse laser beams having a normal-distribution type beam profile or a similar beam profile, the linear pulse laser beams are applied in an overlapped manner. There can be obtained effects similar to those as obtained by a method in which the laser illumination power is gradually increased and then decreased in a step-like manner in plural scans.
摘要翻译: 在通过用具有正态分布型光束轮廓或类似光束轮廓的线性脉冲激光束照射非晶硅膜的结晶中,以重叠的方式施加线性脉冲激光束。 可以获得与通过激光照射功率逐渐增加然后在多次扫描中以阶梯状方式减小的方法获得的效果相似的效果。
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公开(公告)号:US06596613B1
公开(公告)日:2003-07-22
申请号:US08594670
申请日:1996-02-02
申请人: Naoto Kusumoto , Koichiro Tanaka
发明人: Naoto Kusumoto , Koichiro Tanaka
IPC分类号: H01L2120
CPC分类号: H01L21/268 , B23K26/06 , B23K26/064 , B23K26/0648 , B23K26/0665 , H01L21/02422 , H01L21/02488 , H01L21/02532 , H01L21/02672 , H01L21/02678 , H01L21/02686 , H01L21/02691 , H01L27/1285
摘要: In crystallizing an amorphous silicon film by illuminating it with linear pulse laser beams having a normal-distribution type beam profile or a similar beam profile, the linear pulse laser beams are applied in an overlapped manner. There can be obtained effects similar to those as obtained by a method in which the laser illumination power is gradually increased and then decreased in a step-like manner in plural scans.
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公开(公告)号:US20090186468A1
公开(公告)日:2009-07-23
申请号:US12410787
申请日:2009-03-25
申请人: Naoto Kusumoto , Koichiro Tanaka
发明人: Naoto Kusumoto , Koichiro Tanaka
IPC分类号: H01L21/20
CPC分类号: H01L21/268 , B23K26/06 , B23K26/064 , B23K26/0648 , B23K26/0665 , H01L21/02422 , H01L21/02488 , H01L21/02532 , H01L21/02672 , H01L21/02678 , H01L21/02686 , H01L21/02691 , H01L27/1285
摘要: In crystallizing an amorphous silicon film by illuminating it with linear pulse laser beams having a normal-distribution type beam profile or a similar beam profile, the linear pulse laser beams are applied in an overlapped manner. There can be obtained effects similar to those as obtained by a method in which the laser illumination power is gradually increased and then decreased in a step-like manner in plural scans.
摘要翻译: 在通过用具有正态分布型光束轮廓或类似光束轮廓的线性脉冲激光束照射非晶硅膜的结晶中,以重叠的方式施加线性脉冲激光束。 可以获得与通过激光照射功率逐渐增加然后在多次扫描中以阶梯状方式减小的方法获得的效果相似的效果。
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公开(公告)号:US20070190710A1
公开(公告)日:2007-08-16
申请号:US11735542
申请日:2007-04-16
申请人: Naoto Kusumoto , Koichiro Tanaka
发明人: Naoto Kusumoto , Koichiro Tanaka
IPC分类号: H01L21/84
CPC分类号: H01L21/268 , B23K26/06 , B23K26/064 , B23K26/0648 , B23K26/0665 , H01L21/02422 , H01L21/02488 , H01L21/02532 , H01L21/02672 , H01L21/02678 , H01L21/02686 , H01L21/02691 , H01L27/1285
摘要: In crystallizing an amorphous silicon film by illuminating it with linear pulse laser beams having a normal--distribution type beam profile or a similar beam profile, the linear pulse laser beams are applied in an overlapped manner. There can be obtained effects similar to those as obtained by a method in which the laser illumination power is gradually increased and then decreased in a step-like manner in plural scans.
摘要翻译: 在通过用具有正态分布型光束轮廓或类似光束轮廓的线性脉冲激光束照射非晶硅膜的结晶中,以重叠的方式施加线性脉冲激光束。 可以获得与通过激光照射功率逐渐增加然后在多次扫描中以阶梯状方式减小的方法获得的效果相似的效果。
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公开(公告)号:US06947452B2
公开(公告)日:2005-09-20
申请号:US10602762
申请日:2003-06-25
申请人: Naoto Kusumoto , Koichiro Tanaka
发明人: Naoto Kusumoto , Koichiro Tanaka
IPC分类号: H01L21/268 , B23K26/06 , H01L21/20 , H01S3/10
CPC分类号: H01L21/268 , B23K26/06 , B23K26/064 , B23K26/0648 , B23K26/0665 , H01L21/02422 , H01L21/02488 , H01L21/02532 , H01L21/02672 , H01L21/02678 , H01L21/02686 , H01L21/02691 , H01L27/1285
摘要: In crystallizing an amorphous silicon film by illuminating it with linear pulse laser beams having a normal-distribution type beam profile or a similar beam profile, the linear pulse laser beams are applied in an overlapped manner. There can be obtained effects similar to those as obtained by a method in which the laser illumination power is gradually increased and then decreased in a step-like manner in plural scans.
摘要翻译: 在通过用具有正态分布型光束轮廓或类似光束轮廓的线性脉冲激光束照射非晶硅膜的结晶中,以重叠的方式施加线性脉冲激光束。 可以获得与通过激光照射功率逐渐增加然后在多次扫描中以阶梯状方式减小的方法获得的效果相似的效果。
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公开(公告)号:US07208358B2
公开(公告)日:2007-04-24
申请号:US11203282
申请日:2005-08-15
申请人: Naoto Kusumoto , Koichiro Tanaka
发明人: Naoto Kusumoto , Koichiro Tanaka
IPC分类号: H01L21/84
CPC分类号: H01L21/268 , B23K26/06 , B23K26/064 , B23K26/0648 , B23K26/0665 , H01L21/02422 , H01L21/02488 , H01L21/02532 , H01L21/02672 , H01L21/02678 , H01L21/02686 , H01L21/02691 , H01L27/1285
摘要: In crystallizing an amorphous silicon film by illuminating it with linear pulse laser beams having a normal-distribution type beam profile or a similar beam profile, the linear pulse laser beams are applied in an overlapped manner. There can be obtained effects similar to those as obtained by a method in which the laser illumination power is gradually increased and then decreased in a step-like manner in plural scans.
摘要翻译: 在通过用具有正态分布型光束轮廓或类似光束轮廓的线性脉冲激光束照射非晶硅膜的结晶中,以重叠的方式施加线性脉冲激光束。 可以获得与通过激光照射功率逐渐增加然后在多次扫描中以阶梯状方式减小的方法获得的效果相似的效果。
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公开(公告)号:US20060030166A1
公开(公告)日:2006-02-09
申请号:US11203282
申请日:2005-08-15
申请人: Naoto Kusumoto , Koichiro Tanaka
发明人: Naoto Kusumoto , Koichiro Tanaka
IPC分类号: H01L21/324
CPC分类号: H01L21/268 , B23K26/06 , B23K26/064 , B23K26/0648 , B23K26/0665 , H01L21/02422 , H01L21/02488 , H01L21/02532 , H01L21/02672 , H01L21/02678 , H01L21/02686 , H01L21/02691 , H01L27/1285
摘要: In crystallizing an amorphous silicon film by illuminating it with linear pulse laser beams having a normal-distribution type beam profile or a similar beam profile, the linear pulse laser beams are applied in an overlapped manner. There can be obtained effects similar to those as obtained by a method in which the laser illumination power is gradually increased and then decreased in a step-like manner in plural scans.
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公开(公告)号:US08481370B2
公开(公告)日:2013-07-09
申请号:US11498164
申请日:2006-08-03
申请人: Kazuo Nishi , Hiroki Adachi , Naoto Kusumoto , Yuusuke Sugawara , Hidekazu Takahashi , Daiki Yamada , Yoshikazu Hiura
发明人: Kazuo Nishi , Hiroki Adachi , Naoto Kusumoto , Yuusuke Sugawara , Hidekazu Takahashi , Daiki Yamada , Yoshikazu Hiura
IPC分类号: H01L21/00
CPC分类号: H01L31/0203 , H01L23/49805 , H01L24/29 , H01L24/32 , H01L24/83 , H01L2224/2929 , H01L2224/293 , H01L2224/83851 , H01L2924/01078 , H01L2924/01079 , H01L2924/07811 , H01L2924/09701 , H01L2924/12036 , H01L2924/12042 , H01L2924/14 , H01L2924/3512 , H01L2924/00 , H01L2924/00014
摘要: The present invention provides a semiconductor device having a structure that can be mounted on a wiring substrate, as for the semiconductor device formed over a thin film-thickness substrate, a film-shaped substrate, or a sheet-like substrate. In addition, the present invention provides a method for manufacturing a semiconductor device that is capable of raising a reliability of mounting on a wiring substrate. One feature of the present invention is to bond a semiconductor element formed on a substrate having isolation to a member that a conductive film is formed via a medium having an anisotropic conductivity.
摘要翻译: 本发明提供一种半导体器件,其具有能够安装在布线基板上的结构,对于形成在薄膜基板,薄膜状基板或片状基板上的半导体器件。 另外,本发明提供一种能够提高安装在布线基板上的可靠性的半导体装置的制造方法。 本发明的一个特征是通过具有各向异性导电性的介质将形成在具有隔离衬底的半导体元件与形成有导电膜的构件接合。
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公开(公告)号:US08415664B2
公开(公告)日:2013-04-09
申请号:US13271272
申请日:2011-10-12
申请人: Tatsuya Arao , Daiki Yamada , Hidekazu Takahashi , Naoto Kusumoto , Kazuo Nishi , Yuusuke Sugawara , Hironobu Takahashi
发明人: Tatsuya Arao , Daiki Yamada , Hidekazu Takahashi , Naoto Kusumoto , Kazuo Nishi , Yuusuke Sugawara , Hironobu Takahashi
IPC分类号: H01L31/0232
CPC分类号: H01L27/14632 , H01L27/14621 , H01L27/14623 , H01L27/14625 , H01L27/1464 , H01L27/14643 , H01L27/14687 , H01L27/14689 , H01L27/14692
摘要: Techniques are provided for obtaining a photoelectric conversion device having a favorable spectral sensitivity characteristic and reduced variation in output current without a contamination substance mixed into a photoelectric conversion layer or a transistor, and for obtaining a highly reliable semiconductor device including a photoelectric conversion device. A semiconductor device may include, over an insulating surface, a first electrode; a second electrode; a color filter between the first electrode and the second electrode; an overcoat layer covering the color filter; and a photoelectric conversion layer over the overcoat layer, where one end portion of the photoelectric conversion layer is in contact with the first electrode, and where an end portion of the color filter lies inside the other end portion of the photoelectric conversion layer.
摘要翻译: 提供了用于获得具有良好的光谱灵敏度特性和减少的输出电流变化的光电转换装置的技术,而没有混入光电转换层或晶体管中的污染物质,并且用于获得包括光电转换装置的高度可靠的半导体装置。 半导体器件可以在绝缘表面上包括第一电极; 第二电极; 在第一电极和第二电极之间的滤色器; 覆盖滤色器的外涂层; 以及在所述外涂层上的光电转换层,其中所述光电转换层的一个端部与所述第一电极接触,并且所述滤色器的端部位于所述光电转换层的另一端部的内部。
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