Semiconductor device
    80.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号:US08415664B2

    公开(公告)日:2013-04-09

    申请号:US13271272

    申请日:2011-10-12

    IPC分类号: H01L31/0232

    摘要: Techniques are provided for obtaining a photoelectric conversion device having a favorable spectral sensitivity characteristic and reduced variation in output current without a contamination substance mixed into a photoelectric conversion layer or a transistor, and for obtaining a highly reliable semiconductor device including a photoelectric conversion device. A semiconductor device may include, over an insulating surface, a first electrode; a second electrode; a color filter between the first electrode and the second electrode; an overcoat layer covering the color filter; and a photoelectric conversion layer over the overcoat layer, where one end portion of the photoelectric conversion layer is in contact with the first electrode, and where an end portion of the color filter lies inside the other end portion of the photoelectric conversion layer.

    摘要翻译: 提供了用于获得具有良好的光谱灵敏度特性和减少的输出电流变化的光电转换装置的技术,而没有混入光电转换层或晶体管中的污染物质,并且用于获得包括光电转换装置的高度可靠的半导体装置。 半导体器件可以在绝缘表面上包括第一电极; 第二电极; 在第一电极和第二电极之间的滤色器; 覆盖滤色器的外涂层; 以及在所述外涂层上的光电转换层,其中所述光电转换层的一个端部与所述第一电极接触,并且所述滤色器的端部位于所述光电转换层的另一端部的内部。