公开(公告)号：US5545349A

公开(公告)日：1996-08-13

申请号：US210418

申请日：1994-03-18

申请人： Jun Kurii ,  Noboru Nomura ,  Masami Itoh ,  Kozo Ohira ,  Masaki Tsumadori ,  Akira Matsunaga ,  Akio Kimura ,  Shigetoshi Suzue

发明人： Jun Kurii ,  Noboru Nomura ,  Masami Itoh ,  Kozo Ohira ,  Masaki Tsumadori ,  Akira Matsunaga ,  Akio Kimura ,  Shigetoshi Suzue

IPC分类号： C11D3/39 ,  C09K3/00 ,  C01B15/10

CPC分类号： C11D3/391

摘要： A bleaching composition comprising:(a) Hydrogen peroxide or peroxide that produces hydrogen peroxide in aqueous solution; and(b) An organic acid peroxide precursor that produces organic acid peroxide by reacting with said hydrogen peroxide or peroxide that produces hydrogen peroxide in aqueous solution, wherein said organic acid peroxide is represented by general formula (I): ##STR1## wherein R.sup.1 represents a straight chain or branched chain alkyl or alkenyl group having 1-5 carbon atoms, R.sup.2 represents a straight chain or branched chain alkylene group having 1-8 carbon atoms or a phenylene group that may be substituted with a straight chain or branched chain alkyl group having 1-5 carbon atoms, A represent identical or different alkylene groups having from 2 to 4 carbon atoms, and n represents an integer from 0-100.

摘要翻译： 一种漂白组合物，其包含：（a）在水溶液中产生过氧化氢的过氧化氢或过氧化物; （b）通过与在水溶液中产生过氧化氢的所述过氧化氢或过氧化物反应产生有机过氧化氢的有机过氧化氢前体，其中所述有机过氧化物由通式（I）表示： 其中R1表示具有1-5个碳原子的直链或支链烷基或烯基，R2表示具有1-8个碳原子的直链或支链亚烷基或可以被直链或支链取代的亚苯基 具有1-5个碳原子的链烷基，A表示具有2至4个碳原子的相同或不同的亚烷基，n表示0-100的整数。

公开(公告)号：US5501739A

公开(公告)日：1996-03-26

申请号：US158305

申请日：1993-11-29

申请人： Yuichiro Yamada ,  Naoki Suzuki ,  Ryuzo Houchin ,  Noboru Nomura ,  Kousaku Yano ,  Yuka Terai

发明人： Yuichiro Yamada ,  Naoki Suzuki ,  Ryuzo Houchin ,  Noboru Nomura ,  Kousaku Yano ,  Yuka Terai

IPC分类号： H01L21/205 ,  B05D1/18 ,  B05D7/24 ,  C23C16/54 ,  H01L21/302 ,  C23C16/00

CPC分类号： B82Y30/00 ,  B05D1/185 ,  B05D1/60 ,  B82Y40/00 ,  C23C16/54

摘要： A forming apparatus of a thin film includes a processing chamber where a predetermined process is carried out on a surface of a supplied substrate. A feeding device is provided in the processing chamber for feeding material to form an organic molecular layer including silicon or germanium on the surface of the substrate. A forming method of a thin film includes the steps of forming the thin film on the surface of the supplied substrate in the processing chamber, and feeding material for forming the organic molecular layer, including silicon or germanium, on the formed thin film on the surface of the substrate through a feeding device in the processing chamber, and then forming the organic molecular layer on the surface of the substrate.

摘要翻译： 薄膜的形成装置包括处理室，其中在所提供的基板的表面上进行预定的处理。 在处理室中设置有供给装置，用于供给材料以在基板的表面上形成包括硅或锗的有机分子层。 薄膜的形成方法包括以下步骤：在处理室中供应的基板的表面上形成薄膜，以及在表面上形成的薄膜上形成有机分子层（包括硅或锗）的材料 通过处理室中的进料装置，然后在基材表面上形成有机分子层。

公开(公告)号：US5472826A

公开(公告)日：1995-12-05

申请号：US193550

申请日：1994-02-08

申请人： Masayuki Endo ,  Teruhito Ohnishi ,  Noboru Nomura

发明人： Masayuki Endo ,  Teruhito Ohnishi ,  Noboru Nomura

IPC分类号： G03F7/38 ,  H01L21/027 ,  H01L21/266 ,  H01L21/30 ,  H01L21/311 ,  G03F7/26

CPC分类号： H01L21/31111 ,  H01L21/0274 ,  H01L21/266

摘要： An improved semiconductor device fabrication technique is disclosed. A resist layer, composed of a chemical compound which generates an acid when exposed to energy light and a resin which contains protecting groups that are removed from the resin by acid, is formed on top of a semiconductor substrate. The resist layer is subjected to a lithography and a development process and is formed into a resist pattern. This resist pattern is exposed to ultraviolet beams, and the chemical compound generates an acid and the protecting groups are removed from the resin. As a result of such an elimination reaction, the surface of the resist pattern becomes coarse. Thereafter, an implant of ions is carried out to the semiconductor substrate using the resist pattern as a mask. The surface of the semiconductor substrate is cleaned using a cleaning solution, and the resist pattern with a coarse surface can easily and completely be removed from the semiconductor substrate.

摘要翻译： 公开了一种改进的半导体器件制造技术。 在半导体基板的顶部形成有由暴露于能量光时产生酸的化合物构成的抗蚀剂层和含有通过酸从树脂中除去的保护基的树脂。 对抗蚀剂层进行光刻和显影处理，并形成抗蚀剂图案。 该抗蚀剂图案暴露于紫外线，并且化合物产生酸，并且保护基团从树脂中除去。 作为这种消除反应的结果，抗蚀图案的表面变粗。 此后，使用抗蚀剂图案作为掩模，对半导体衬底进行离子注入。 使用清洗液对半导体基板的表面进行清洗，可以容易且完全地从半导体基板除去具有粗糙表面的抗蚀剂图案。

公开(公告)号：US5436424A

公开(公告)日：1995-07-25

申请号：US80824

申请日：1993-06-24

申请人： Ichiro Nakayama ,  Noboru Nomura ,  Tokuhiko Tamaki ,  Mitsuhiro Okuni ,  Masafumi Kubota

发明人： Ichiro Nakayama ,  Noboru Nomura ,  Tokuhiko Tamaki ,  Mitsuhiro Okuni ,  Masafumi Kubota

IPC分类号： H01L21/302 ,  H01J37/32 ,  H01L21/3065 ,  H05H1/46 ,  B23K10/00

CPC分类号： H01J37/32091 ,  H01J37/32165

摘要： A plasma generating apparatus includes a vacuum chamber having an insulated inner surface, more than two electrodes arranged on the insulated inner surface of the vacuum chamber, a high frequency applying device for applying high frequencies having different phases in order of positions of the electrodes, and a holder on which an object to be processed is placed. In the apparatus, a magnetic field is produced under plural alternating electric fields, so that electrons in a plasma generating portion are rotated to generate high density plasma under a high vacuum when the high frequencies are applied to the electrodes to generate the plasma and a specified process such as etching, CVD, or doping is carried on the object by reaction products generated at the portion.

摘要翻译： 一种等离子体发生装置，包括具有绝缘内表面的真空室，布置在真空室绝缘内表面上的多于两个电极的高频施加装置，用于按照电极位置的顺序施加具有不同相位的高频; 放置待处理物体的支架。 在该装置中，在多个交变电场下产生磁场，使得当将高频施加到电极以产生等离子体和指定的等离子体时，等离子体产生部分中的电子在高真空下旋转以产生高密度等离子体 通过在该部分产生的反应产物在物体上进行诸如蚀刻，CVD或掺杂的工艺。

公开(公告)号：US5424905A

公开(公告)日：1995-06-13

申请号：US40297

申请日：1993-03-30

申请人： Noboru Nomura ,  Kenji Harafuji ,  Masafumi Kubota ,  Tokuhiko Tamaki ,  Mitsuhiro Ohkuni ,  Ichiro Nakayama

发明人： Noboru Nomura ,  Kenji Harafuji ,  Masafumi Kubota ,  Tokuhiko Tamaki ,  Mitsuhiro Ohkuni ,  Ichiro Nakayama

IPC分类号： H01J37/32 ,  H01J37/317

CPC分类号： H01J37/32302 ,  H01J37/32192 ,  H01J2237/3341

摘要： Three electrodes are disposed at lateral sides of a plasma generating chamber of an etching apparatus serving as a plasma generating apparatus. A sample stage is disposed at a lower part of the plasma generating chamber, and an opposite electrode is disposed at an upper part thereof. High frequency electric power having a first frequency is supplied to the sample stage and the opposite electrode. Respectively supplied to the three electrodes 4, 5, 6 are high frequency electric powers which are oscillated by a three-phase magnetron, which have a second frequency different from the first frequency and of which respective phases are successively different by about 120.degree. from one another, thus forming a rotational electric field in the plasma generating chamber.

摘要翻译： 在作为等离子体发生装置的蚀刻装置的等离子体发生室的侧面设置三个电极。 样品台设置在等离子体发生室的下部，相对电极设置在其上部。 具有第一频率的高频电力被提供给样品台和相对电极。 分别提供给三个电极4,5,6的是​​由三相磁控管振荡的高频电力，三相磁控管具有与第一频率不同的第二频率，并且各相相互相差约120度 从而在等离子体发生室中形成旋转电场。

公开(公告)号：US5306601A

公开(公告)日：1994-04-26

申请号：US93032

申请日：1993-07-19

申请人： Kazuhiko Hashimoto ,  Taichi Koizumi ,  Kenji Kawakita ,  Noboru Nomura

发明人： Kazuhiko Hashimoto ,  Taichi Koizumi ,  Kenji Kawakita ,  Noboru Nomura

IPC分类号： G03F7/038 ,  G03F7/039 ,  G03C5/00

CPC分类号： B82Y30/00 ,  B82Y10/00 ,  G03F7/038 ,  G03F7/039 ,  C08G2261/1412 ,  C08G2261/3223 ,  Y10S430/143

摘要： Herein is provided a fine pattern forming method which is prevented from the charging-up phenomenon at the time of electric charged beam writing owing to the use of a polyalkylthiophene type conductive polymeric substance or a quaternary ammonium ion type polymeric substance in a monolayer or multilayer resist.

摘要翻译： 本发明提供了一种精细图案形成方法，该方法由于在单层或多层抗蚀剂中使用聚烷基噻吩型导电聚合物或季铵离子型聚合物而防止充电光束写入时的充电现象 。

公开(公告)号：US5191465A

公开(公告)日：1993-03-02

申请号：US759041

申请日：1991-09-05

申请人： Kazuhiro Yamashita ,  Noboru Nomura

发明人： Kazuhiro Yamashita ,  Noboru Nomura

IPC分类号： G03F9/00

CPC分类号： G03F9/7049

摘要： An optical apparatus for aligning a reticle and a wafer together in connection with reduction projection onto the wafer of an image of a circuit pattern formed on the reticle. Two light beams having slightly different frequencies are concurrently applied to alignment gratings on the reticle and alignment gratings on the wafer through the windows on the reticle and a reduction projection lens. Heterodyne signals of interference rays resulting from diffraction by the alignment gratings on the reticle of the light applied to the alignment gratings are caught by a first optical sensor. Heterodyne signals of interference rays resulting from diffraction by the alignment gratings on the wafer of the light applied to the alignment gratings are caught by a second optical sensor. The difference in phase of the heterodyne signals detected by the respective optical sensors is detected by a phase meter, and the position of the wafer relative to the reticle is adjusted so that the phase difference is reduced to zero.

摘要翻译： 一种用于将掩模版和晶片结合在一起的光学装置，其与形成在掩模版上的电路图案的图像的晶片上的还原投影相结合。 具有稍微不同频率的两个光束通过掩模版上的窗口和还原投影透镜同时施加在光罩上的对准光栅和晶片上的对准光栅。 通过第一光学传感器捕获由施加到对准光栅的光的光罩上的对准光栅衍射产生的干涉光线的异常信号。 由施加到对准光栅的光的晶片上的对准光栅的衍射产生的干涉光线的异常信号被第二光学传感器捕获。 通过相位计检测由各个光学传感器检测到的外差信号的相位差，调整晶片相对于掩模版的位置，使得相位差减小到零。

公开(公告)号：US5093224A

公开(公告)日：1992-03-03

申请号：US496020

申请日：1990-03-20

申请人： Kazuhiko Hashimoto ,  Kenji Kawakita ,  Noboru Nomura

发明人： Kazuhiko Hashimoto ,  Kenji Kawakita ,  Noboru Nomura

IPC分类号： G03F7/004 ,  G03F7/075 ,  H01L21/027 ,  H01L21/30 ,  H01L21/3213

CPC分类号： G03F7/0754 ,  Y10S430/168

摘要： A process for forming a fine pattern comprising the steps of forming an organic polymer film on a semiconductor substrate followed by heat treatment, applying a resist film consisting of a cyclocarbosilane represented by the general formula (I): ##STR1## where R.sub.1, R.sub.2, R.sub.3 and R.sub.4 are each hydrogen or an alkyl group,a polymer resin, and a photo acid generator, on the organic polymer film followed by heat treatment, exposing to an electric charged beam, forming a resist pattern by developing, and etching the organic polymer film while using the resist pattern as a mask. According to the present invention, a dry etching resistant precise fine resist pattern can be formed with high sensitivity.

公开(公告)号：US5030549A

公开(公告)日：1991-07-09

申请号：US371289

申请日：1989-06-26

申请人： Kazuhiko Hashimoto ,  Taichi Koizumi ,  Kenji Kawakita ,  Noboru Nomura

发明人： Kazuhiko Hashimoto ,  Taichi Koizumi ,  Kenji Kawakita ,  Noboru Nomura

IPC分类号： G03F7/105 ,  G03F1/68 ,  G03F1/80 ,  G03F7/004 ,  G03F7/039 ,  G03F7/09 ,  G03F7/11 ,  G03F7/26 ,  G03F7/38 ,  G03F7/40 ,  H01L21/027 ,  H01L21/30

CPC分类号： G03F7/039 ,  G03F7/0047 ,  G03F7/093

摘要： Provided is a method for forming fine pattern free from shear of pattern caused by charging and high in dry etch resistance by using a high molecular organic film containing an organometallic complex or a metallic salt in single-layer or multi-layer resist process and treating the surface of this film with a reducing agent to form a metallic layer on the surface.

公开(公告)号：US4535376A

公开(公告)日：1985-08-13

申请号：US358608

申请日：1982-03-15

申请人： Noboru Nomura ,  Eiichi Hirota ,  Kiyotaka Wasa

发明人： Noboru Nomura ,  Eiichi Hirota ,  Kiyotaka Wasa

IPC分类号： H05K1/16 ,  G11B5/127 ,  G11B5/147 ,  G11B5/21 ,  G11B5/23 ,  G11B5/255 ,  G11B5/31 ,  H01F3/02 ,  H01F5/00 ,  H01F10/08 ,  H01F10/12 ,  H01F10/13 ,  H01F10/14 ,  G11B5/12

CPC分类号： G11B5/255 ,  G11B5/127 ,  G11B5/147 ,  G11B5/21 ,  G11B5/3106

摘要： A magnetic head includes at least a core for constituting a magnetic circuit and a magnetic gap formed in the core. The core comprises an amorphous magnetic metallic film formed on a non-magnetic high-resistance substrate so that one of the end faces of the non-magnetic high-resistance substrate and the amorphous magnetic metallic film may be brought into contact with a magnetic recording medium.

摘要翻译： 磁头至少包括用于构成磁路的磁芯和形成在磁芯中的磁隙。 芯包括形成在非磁性高电阻基板上的非晶磁性金属膜，使得非磁性高电阻基板和非晶磁性金属膜的端面中的一个可以与磁记录介质接触 。