摘要:
A common voltage generation circuit includes a first operational amplifier which outputs an amplitude voltage of a common voltage based on a first power supply voltage, a second operational amplifier which outputs a high-potential-side voltage of the common voltage based on the first power supply voltage, and a low-potential-side voltage generation circuit which generates a low-potential-side voltage of the common voltage which is lower in potential than the high-potential-side voltage for the amplitude voltage by a charge-pump operation. The common voltage generation circuit supplies the high-potential-side voltage or the low-potential-side voltage to a common electrode which faces a pixel electrode specified by a scan line and a data line of an electro-optical device through an electro-optical substance.
摘要:
An integrated circuit device having a display memory which stores data for at least one frame from among image information displayed in a display panel which has a plurality of scan lines and a plurality of data lines, the display memory including a plurality of wordlines, a plurality of bitlines, a plurality of memory cells, and a wordline control circuit; and the wordline control circuit selecting an identical wordline N times (N is an integer larger than one) from among the wordlines in one horizontal scan period of the display panel.
摘要:
An integrated circuit device includes a pad PDx and an electrostatic discharge protection element ESDx formed in a rectangular region and electrically connected with the pad PDx. The pad PDx is disposed in an upper layer of the electrostatic discharge protection element ESDx so that an arrangement direction of the pads is parallel to a long side direction of the region in which the electrostatic discharge protection element ESDx is formed, and the pad PDx overlaps part or the entirety of the electrostatic discharge protection element ESDx.
摘要:
An integrated circuit device including first to Nth circuit blocks CB1 to CBN disposed along a first direction D1, when the first direction D1 is a direction from a first side of the integrated circuit device toward a third side which is opposite to the first side, the first side being a short side, and when a second direction D2 is a direction from a second side of the integrated circuit device toward a fourth side which is opposite to the second side, the second side being a long side. The circuit blocks CB1 to CBN include a logic circuit block LB, a grayscale voltage generation circuit block GB, data driver blocks DB1 to DB4, and a power supply circuit block PB. The data driver blocks DB1 to DB4 are disposed between the logic circuit block LB and the grayscale voltage generation circuit block GB, and the power supply circuit block PB.
摘要:
An integrated circuit device has a display memory which stores data for at least one frame displayed in a display panel which has a plurality of scan lines and a plurality of data lines. The display memory includes a plurality of RAM blocks, each of the RAM blocks including a plurality of wordlines WL, a plurality of bitlines BL, a plurality of memory cells MC, and a data read control circuit. Each of the RAM blocks is disposed along a first direction X in which the bitlines BL extend. The data read control circuit controls data reading so that data for pixels corresponding to the signal lines is read out by N times reading in one horizontal scan period 1H of the display panel (N is an integer larger than 1)
摘要:
A semiconductor device includes a first insulating film formed on a semiconductor substrate; a second insulating film formed on the first insulating film and having a recess corresponding to a capacitor region; a lower electrode formed in the recess; a capacitor dielectric film formed on the lower electrode; and an upper electrode formed on the capacitor dielectric film. The semiconductor device further includes a conductive portion formed in the first insulating film and the second insulating film for electrically connecting the semiconductor substrate to the upper electrode.
摘要:
A resin molded type semiconductor device has a metallic guard ring that is formed to cover the peripheral edge of the surface of a tetragonal semiconductor substrate. In order to prevent a passivation film on the guard ring from being cracked by stresses due to a resin mold package concentrating in the four corners of the semiconductor substrate, slits or rows of small holes are formed in the corner portions of the guard ring.
摘要:
Herein disclosed is a method for simultaneously preparing a highly pure bisphenol F and/or a bisphenol F for general use and a novolak phenol resin and/or a high molecular weight novolak phenol resin comprising the steps of:(1) a preparation step comprising reacting phenol with formaldehyde in the presence of an acid catalyst and removing the acid catalyst, water and the unreacted phenol from the resulting reaction product to give a crude bisphenol F;(2) a distillation step comprising distilling a part of the crude bisphenol F to give a highly pure bisphenol F, as a distillate, having a binuclear moiety-content of not less than 95% by weight and a novolak phenol resin, as a still-bottom product, having a binuclear moiety-content of not more than 15% by area;(3) a step for mixing the highly pure bisphenol F with the remaining crude bisphenol F to give a bisphenol F for general use; and(4) a step for polymerizing the novolak phenol resin with formaldehyde in the presence of an acid catalyst to give a high molecular weight novolak phenol resin.
摘要:
A resin molded type semiconductor device has a metallic guard ring that is formed to cover the peripheral edge of the surface of a tetragonal semiconductor substrate. In order to prevent a passivation film on the guard ring from being cracked by stresses due to a resin mold package concentrating in the four corners of the semiconductor substrate, slits or rows of small holes are formed in the corner portions of the guard ring.
摘要:
The invention provides a method of forming a coating film by forming in sequence a pigmented base coat and a clear top coat on a substrate followed by finishing by the two-coat one-bake technique, the method being characterized by using, as a coating composition for pigmented base coat formation, a composition comprising, as essential components thereof,(1) an OH-containing resin,(2) an amino resin,(3) a polyorganosiloxane(4) a flaky metal powder and/or a mica powder, and( 5 ) an organic solvent,and using, as a coating composition for clear top coat formation, a composition comprising, as essential components thereof,(1) an OH-containing base resin which further contains at least one group selected from the class consisting of a silanol group and a hydrolyzable group bound directly to a silicon atom,( 2 ) an amino resin, and( 3 ) an organic solvent.