公开(公告)号：US5753809A

公开(公告)日：1998-05-19

申请号：US691577

申请日：1996-08-02

申请人： Koji Ogusu ,  Naoki Matsumoto ,  Takaharu Idogaki ,  Shinichi Tamura

发明人： Koji Ogusu ,  Naoki Matsumoto ,  Takaharu Idogaki ,  Shinichi Tamura

IPC分类号： G01L17/00 ,  B60C23/06 ,  B60C23/00

CPC分类号： B60C23/062 ,  B60C23/061

摘要： To provide a tire pressure estimating system which is capable of estimating tire pressure based on a signal representing the rotational speed of a vehicle wheel via a small amount of processing by using low-capacity memory, a wheel speed sensor is provided for each wheel of a vehicle. A pulse signal output by the wheel speed sensor is supplied to a signal processor. In the signal processor, the rotational speed of each vehicle wheel is found from the pulse signal. The signal processor adopts a second-order linear prediction model for the rotational speed of the vehicle wheel and vibration of the tire using parameters identified from values of the rotational speed. A resonance frequency is then found from the identified parameters. Finally, the tire pressure is estimated from a linear relationship between the pressure and the resonance frequency.

摘要翻译： 为了提供轮胎压力估计系统，其能够通过使用低容量存储器经由少量处理来基于表示车轮的转速的信号来估计轮胎压力，为每个车轮提供轮速传感器 车辆。 由车轮速度传感器输出的脉冲信号被提供给信号处理器。 在信号处理器中，根据脉冲信号找到每个车轮的转速。 信号处理器使用从转速值确定的参数的车轮转速和轮胎振动的二阶线性预测模型。 然后从识别的参数中找到共振频率。 最后，根据压力和共振频率之间的线性关系估计轮胎压力。

公开(公告)号：US5377157A

公开(公告)日：1994-12-27

申请号：US121513

申请日：1993-09-16

申请人： Naoki Matsumoto ,  Tatsuo Ikawa ,  Shigeo Oshima

发明人： Naoki Matsumoto ,  Tatsuo Ikawa ,  Shigeo Oshima

IPC分类号： G11C11/401 ,  G11C7/10 ,  G11C11/4096 ,  G11C7/00 ,  G11C8/00

CPC分类号： G11C11/4096 ,  G11C7/1075

摘要： A multiport memory comprises a pair of memory cells, at least a pair of bit line and a pair of word lines on a random access port side. One of the memory cell is connected to one bit line and one word line and the other memory cell is connected to the other bit line and the other word line. A pair of data lines which are respectively connected to load elements are also provided in the random access port side of the multiport memory. A first switch circuit is connected between the pair of bit lines and the pair of data lines. On a serial access port side, a data register is connected between the pair of bit lines to receive data transmitted through the pair of bit lines. A second switch circuit for transmitting data is connected between the pair of bit lines and the data register. A control circuit opens the first switch circuit, before closing the second switch circuit to transmit data stored in the memory cells to the data register.

摘要翻译： 多端口存储器包括一对存储器单元，在随机存取端口侧至少一对位线和一对字线。 一个存储单元连接到一个位线和一个字线，另一个存储单元连接到另一个位线和另一个字线。 分别连接到负载元件的一对数据线也设置在多端口存储器的随机存取端口侧。 第一开关电路连接在该对位线和该对数据线之间。 在串行访问端口侧，数据寄存器连接在该对位线之间，以接收通过该位线对发送的数据。 用于发送数据的第二开关电路连接在该对位线和数据寄存器之间。 控制电路在闭合第二开关电路之前打开第一开关电路，以将存储在存储单元中的数据传送到数据寄存器。

公开(公告)号：US09791169B2

公开(公告)日：2017-10-17

申请号：US14088693

申请日：2012-05-24

申请人： Minoru Uchida ,  Haruyoshi Yamakawa ,  Naoki Matsumoto

发明人： Minoru Uchida ,  Haruyoshi Yamakawa ,  Naoki Matsumoto

IPC分类号： F24H1/12 ,  F24H1/14 ,  F24H9/00 ,  F24H9/20

CPC分类号： F24H1/121 ,  F24H1/142 ,  F24H9/0015 ,  F24H9/2028

摘要： The invention is directed to a liquid heater for rapidly heating a liquid without overheating the liquid. The liquid heater comprises a liquid flow channel having a passage through which liquid flows, a heating part disposed outside the liquid flow channel, a heat reflecting part facing a heat radiating side of the heating part, and a cooling part through which a cooling medium flows adjacent a reverse side of a reflecting surface of the heat reflecting part for cooling the heat reflecting part. Radiant heat not absorbed in the liquid is reflected by the heat reflecting part. The heat reflecting part reflects radiant heat cooled by the cooling part so that the body of the liquid heater and peripheral members are maintained at a temperature not higher than a predetermined temperature to prevent overheating the liquid.

公开(公告)号：US09209015B2

公开(公告)日：2015-12-08

申请号：US12783312

申请日：2010-05-19

申请人： Tetsuo Yamamoto ,  Naoki Matsumoto ,  Koichi Honda

发明人： Tetsuo Yamamoto ,  Naoki Matsumoto ,  Koichi Honda

IPC分类号： C23C16/00 ,  H01L21/306 ,  C23F1/00 ,  H01L21/02 ,  C23C16/34 ,  C23C16/455 ,  C23C16/50 ,  H01J37/32 ,  C23C16/52

CPC分类号： H01L21/02274 ,  C23C16/345 ,  C23C16/45544 ,  C23C16/45578 ,  C23C16/50 ,  C23C16/52 ,  H01J37/32009 ,  H01J37/32357 ,  H01J37/3244 ,  H01J2237/3321 ,  H01L21/0214 ,  H01L21/0228

摘要： Provided is a substrate processing apparatus, which comprises a process chamber configured to process a substrate, a first plasma generation chamber in the process chamber, a first reactive gas supply unit configured to supply first reactive gas into the first plasma generation chamber, a pair of first discharge electrodes configured to generate plasma and to excite the first reactive gas, a first gas ejection port installed in a side wall of the first plasma generation chamber to eject an active species toward the substrate, a second plasma generation chamber in the process chamber, a second reactive gas supply unit configured to supply second reactive gas into the second plasma generation chamber, a pair of second discharge electrodes configured to generate plasma and to excite the second reactive gas, and a second gas ejection port installed in a side wall of the second plasma generation chamber to eject an active species.

摘要翻译： 提供了一种基板处理装置，其包括处理基板的处理室，处理室中的第一等离子体生成室，被配置为将第一反应气体供应到第一等离子体产生室中的第一反应气体供给单元， 第一放电电极，被配置为产生等离子体并激发第一反应气体;第一气体喷出口，安装在第一等离子体产生室的侧壁中，以向基板喷射活性物质;处理室中的第二等离子体产生室; 第二反应气体供给单元，被配置为将第二反应气体供应到第二等离子体产生室中;一对第二放电电极，被配置为产生等离子体并激发第二反应气体;以及第二气体喷出口，其安装在第二等离子体产生室的侧壁中 第二等离子体产生室以喷射活性物质。

公开(公告)号：US08753475B2

公开(公告)日：2014-06-17

申请号：US12366907

申请日：2009-02-06

申请人： Naoki Matsumoto ,  Jun Yoshikawa ,  Masaru Sasaki ,  Kazuyuki Kato ,  Masafumi Shikata ,  Shingo Takahashi

发明人： Naoki Matsumoto ,  Jun Yoshikawa ,  Masaru Sasaki ,  Kazuyuki Kato ,  Masafumi Shikata ,  Shingo Takahashi

IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306

CPC分类号： H01J37/32192 ,  H01J37/32238

摘要： Provided is a plasma processing apparatus featuring highly improved plasma ignition property and ignition stability by defining a positional relationship between a dielectric and the slots. A plasma processing apparatus 11 includes a processing chamber 12 having a top opening; a dielectric 15 which has inclined surfaces 16a and 16b on a bottom surface thereof so that a thickness dimension is successively varied, and is disposed so as to close the top opening of the processing chamber 12; and an antenna 24disposed on a top surface of the dielectric 15, for supplying microwave to the dielectric 15, thereby generating plasma at the bottom surface of the dielectric 15. Further, the antenna 24 is provided with a plurality of slots 25positioned uprightly above the inclined surfaces 16a and 16b.

摘要翻译： 提供了通过限定电介质和槽之间的位置关系而具有高度改进的等离子体点火性能和点火稳定性的等离子体处理装置。 等离子体处理装置11包括具有顶部开口的处理室12; 电介质15，其底面上具有倾斜面16a，16b，使得厚度尺寸依次变化，并设置成封闭处理室12的顶部开口; 以及天线24，其布置在电介质15的顶表面上，用于向电介质15提供微波，从而在电介质15的底表面处产生等离子体。此外，天线24设置有多个槽25， 表面16a和16b。

公开(公告)号：US08592948B2

公开(公告)日：2013-11-26

申请号：US13595583

申请日：2012-08-27

申请人： Naoki Matsumoto

发明人： Naoki Matsumoto

IPC分类号： H01L29/20

CPC分类号： C30B29/406 ,  C30B25/20 ,  H01L21/02395 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02642 ,  H01L21/02647 ,  H01L21/02658

摘要： The present invention provides a substrate formed at a low cost and having a controlled plate shape, an epitaxial layer provided substrate obtained by forming an epitaxial layer on the substrate, and methods for producing them. The method for producing the substrate according to the present invention includes an ingot growing step serving as a step of preparing an ingot formed of gallium nitride (GaN); and a slicing step serving as a step of obtaining a substrate formed of gallium nitride, by slicing the ingot. In the slicing step, the substrate thus obtained by the slicing has a main surface with an arithmetic mean roughness Ra of not less than 0.05 μm and not more than 1 μm on a line of 10 mm.

摘要翻译： 本发明提供一种以低成本形成并具有受控板形状的基板，通过在基板上形成外延层而获得的外延层提供的基板及其制造方法。 根据本发明的基板的制造方法包括：铸锭生长步骤，用于制备由氮化镓（GaN）形成的铸锭的步骤; 以及作为通过切割锭来获得由氮化镓形成的衬底的步骤的切片步骤。 在切片工序中，通过切片得到的基板的主表面的行数为10mm以上的算术平均粗糙度Ra为0.05μm以上且1μm以下。

公开(公告)号：US08471365B2

公开(公告)日：2013-06-25

申请号：US12833145

申请日：2010-07-09

申请人： Sayuri Yamaguchi ,  Naoki Matsumoto ,  Hidenori Mikami

发明人： Sayuri Yamaguchi ,  Naoki Matsumoto ,  Hidenori Mikami

IPC分类号： H01L29/205

CPC分类号： H01L21/02021 ,  C30B29/406 ,  C30B33/00 ,  Y10T83/04

摘要： A nitride semiconductor substrate having a main surface serving as a semipolar plane and provided with a chamfered portion capable of effectively preventing cracking and chipping, a semiconductor device fabricated using the nitride semiconductor substrate, and a method for manufacturing the nitride semiconductor substrate and the semiconductor device are provided. The nitride semiconductor substrate includes a main surface inclined at an angle of 71° or more and 79° or less with respect to the (0001) plane toward the [1-100] direction or inclined at an angle of 71° or more and 79° or less with respect to the (000-1) plane toward the [−1100] direction; and a chamfered portion located at an edge of an outer periphery of the main surface. The chamfered portion is inclined at an angle θ1 or θ2 of 5° or more and 45° or less with respect to adjacent one of the main surface and a backside surface on a side opposite to the main surface. Accordingly, cracking and chipping occurring from the edge of the outer periphery of the nitride semiconductor substrate can be effectively suppressed.

摘要翻译： 一种氮化物半导体衬底，其主表面用作半极性平面，并且具有能够有效防止裂纹和碎裂的倒角部分，使用氮化物半导体衬底制造的半导体器件，以及用于制造氮化物半导体衬底和半导体器件的方法 被提供。 氮化物半导体衬底包括相对于（0001）面朝向[1-100]方向以71°以上且79°以下的角度倾斜的主面或倾斜71°以上79°的主表面 °或更小，相对于（000-1）面朝向[-1100]方向; 以及位于主表面的外周边缘的倒角部分。 倒角部分相对于主表面的相邻一侧和与主表面相对的一侧的后侧表面以相对的一个角度θ1或θ2倾斜5°以上且45°以下。 因此，可以有效地抑制从氮化物半导体基板的外周边缘发生的裂纹和切屑。

公开(公告)号：US08455367B2

公开(公告)日：2013-06-04

申请号：US13192483

申请日：2011-07-28

申请人： Naoki Matsumoto

发明人： Naoki Matsumoto

IPC分类号： H01L21/302

CPC分类号： C30B29/406 ,  C30B33/00

摘要： In an independent GaN film manufactured by creating a GaN layer on a base heterosubstrate using vapor-phase deposition and then removing the base substrate, owing to layer-base discrepancy in thermal expansion coefficient and lattice constant, bow will be a large ±40 μm to ±100 μm. Since with that bow device fabrication by photolithography is challenging, reducing the bow to +30 μm to −20 μm is the goal. The surface deflected concavely is ground to impart to it a damaged layer that has a stretching effect, making the surface become convex. The damaged layer on the surface having become convex is removed by etching, which curtails the bow. Alternatively, the convex surface on the side opposite the surface having become convex is ground to generate a damaged layer. With the concave surface having become convex due to the damaged layer, suitably etching off the damaged layer curtails the bow.

摘要翻译： 在通过使用气相沉积在基底杂质底物上形成GaN层然后除去基底而制造的独立的GaN膜中，由于热膨胀系数和晶格常数的层基差异，弓将是大的±40μm至 ±100 mum 由于通过光刻的弓装置制造是具有挑战性的，所以将弓减少至+30μm至-20μm是目标。 将凹面偏转的表面研磨成具有拉伸效果的损伤层，使表面变凸。 通过蚀刻来去除已经变得凸起的表面上的损伤层，这会削弱弓形。 或者，与已经变得凸起的表面相对的一侧的凸表面被研磨以产生受损层。 由于损伤层由于凹面变得凸起，因此适当地蚀刻出损伤层，从而使弓弯曲。

公开(公告)号：US20130093321A1

公开(公告)日：2013-04-18

申请号：US13638345

申请日：2011-03-24

申请人： Wataru Yoshikawa ,  Naoki Matsumoto ,  Jun Yoshikawa

发明人： Wataru Yoshikawa ,  Naoki Matsumoto ,  Jun Yoshikawa

IPC分类号： H01J23/36 ,  H01J9/44

CPC分类号： H01J23/36 ,  H01J9/44 ,  H01J37/32192 ,  H01J37/32238

摘要： In a dielectric window 41 for a plasma processing apparatus, a first dielectric window recess 47 is formed on an outer region of a surface of the dielectric window 41 in a diametrical direction of the dielectric window 41 at a side where plasma is generated, and the first dielectric window recess 47 is extended in a ring shape and has a tapered shape inwardly in a thickness direction of the dielectric window 41. A multiple number of second dielectric window recesses 53a to 53g are formed between the center of the dielectric window 41 and the first dielectric window recess 47, and each of the second dielectric window recesses 53a to 53g is recessed inwardly in the thickness direction of the dielectric window 41 from the surface of the dielectric window 41.

摘要翻译： 在用于等离子体处理装置的电介质窗41中，在电介质窗41的表面的外部区域，在电介质窗口41的产生等离子体的一侧的直径方向形成有第一电介质窗凹部47， 第一电介质窗凹部47以环状延伸，并且在电介质窗口41的厚度方向上向内具有锥形。多个第二电介质窗凹部53a至53g形成在电介质窗41的中心和 第一电介质窗凹部47，并且第二电介质窗凹部53a至53g中的每一个从电介质窗口41的表面沿电介质窗41的厚度方向向内凹陷。

公开(公告)号：USD672377S1

公开(公告)日：2012-12-11

申请号：US29369650

申请日：2010-09-10

申请人： Wataru Yoshikawa ,  Naoki Matsumoto ,  Jun Yoshikawa

设计人： Wataru Yoshikawa ,  Naoki Matsumoto ,  Jun Yoshikawa