摘要:
In a reverse conducting semiconductor device, which forms a composition circuit, a positive voltage that is higher than a positive voltage of a collector electrode may be applied to an emitter electrode. In this case, in a region of the reverse conducting semiconductor device in which a return diode is formed, a body contact region functions as an anode, a drift contact region functions as a cathode, and current flows from the anode to the cathode. When a voltage having a lower electric potential than the collector electrode is applied to the trench gate electrode at that time, p-type carriers are generated within the cathode and a quantity of carriers increases within the return diode. As a result, a forward voltage drop of the return diode lowers, and constant loss of electric power can be reduced. Electric power loss can be reduced in a power supply device that uses such a composition circuit in which a switching element and the return diode are connected in reverse parallel.
摘要:
A semiconductor device having a substrate; an emitter electrode or source electrode formed on the top surface side of the substrate; a gate electrode formed on the top surface side of the substrate; and a collector electrode or drain electrode formed on the bottom surface side of the substrate. The device includes an insulating region formed so as to surround a device-forming region provided on the top surface side of the substrate; and a drift region of the device-forming region, the drift region being in contact with the insulating region, is formed of a semiconductor layer having the same conduction type as that of a channel formed through application of an electric potential to the gate electrode. The gate electrode is a trench gate. An outer peripheral portion of the emitter electrode or source electrode extends in a width of 20 μm or more over the top surface of the insulating region. The insulating region includes, in its interior, a dielectric region having a relative dielectric constant lower than that of the insulating region.
摘要:
To block the transmission to a vehicle body side of the vibration due to the cavitation phenomenon occurred in a primary liquid chamber so as to prevent the generation of noises, at the same time, to make the device compact, and to improve the fitting accuracy to obtain the reliable positioning, a first metallic fitting and a second metallic fitting are connected by an insulator. A primary liquid chamber and a secondary liquid chamber formed inwardly are partitioned by a partition member and communicated therebetween by an orifice passage. The partition member is floatingly supported between an extended portion of the insulator and an outer peripheral thick wall portion of a diaphragm, and the tuning is performed to generate the rigid resonance at the predetermined frequency. An outer ring is provided in the outer peripheral thick wall portion so as to be securely fixed by a fixing portion formed by bending an end of an outer cylindrical fitting. The floatingly supporting structure does not become large-sized and complicated since the partition member is simply floatingly supported.
摘要:
A semiconductor device having a substrate; an emitter electrode or source electrode formed on the top surface side of the substrate; a gate electrode formed on the top surface side of the substrate; and a collector electrode or drain electrode formed on the bottom surface side of the substrate. The device includes an insulating region formed so as to surround a device-forming region provided on the top surface side of the substrate; and a drift region of the device-forming region, the drift region being in contact with the insulating region, is formed of a semiconductor layer having the same conduction type as that of a channel formed through application of an electric potential to the gate electrode. The gate electrode is a trench gate. An outer peripheral portion of the emitter electrode or source electrode extends in a width of 20 μm or more over the top surface of the insulating region. The insulating region includes, in its interior, a dielectric region having a relative dielectric constant lower than that of the insulating region.
摘要:
A process for producing fatty acids, which comprises supplying an oil phase substrate and a water phase substrate to an enzyme column packed with an immobilized enzyme, concurrently flowing them in the same direction, and hydrolyzing a fat and/or oil, wherein the oil phase substrate and the water phase substrate are alternately supplied to the enzyme column.
摘要:
A method for producing detergent granules, includes the step of dry-neutralizing a liquid acid precursor of a non-soap, anionic surfactant with a water-soluble, solid, alkali inorganic substance. In this method, a dry-neutralizing step is carried out in the presence of 0.1 to 1.0 mol of an inorganic acid per mol of the liquid acid precursor of a non-soap, anionic surfactant. The above detergent granules have the features of extremely low tackiness of the granules and containing larger number of micropores. By using the detergent granules, a high-bulk density detergent composition having a small particle size can be obtained at high yields.
摘要:
A semiconductor device comprising: a semiconductor substrate, a dielectric film formed on the semiconductor substrate, a first electrode and a second electrode separated from each other on the dielectric film; a spiral thin film layer having both ends connected to the first electrode and the second electrode, respectively, the spiral thin film layer surrounding the first electrode, the thin film layer being formed on the dielectric layer, and a plurality of p-n diodes formed in series in the spiral thin film layer along a longitudinal direction of the spiral thin film layer.
摘要:
A propylene/ethylene/&agr;-olefin terpolymer characterized in that i) there is from 0.01 mol % to less than 15 mol % of a comonomer unit with a molar ratio of ethylene units/C4-C20 &agr;-olefin units being in the range of from 6.5×10−4 to 0.99, and from more than 85 mol % to not more than 99.99 mol % of a propylene unit with 2,1- and 1,3-propylene units being in the range of from 0 to 1 mol %, in a polymer chain determined by 13C-NMR spectroscopy; ii) a weight average molecular weight (Mw) determined by GPC is in the range of from 40,000 to 1,000,000; and iii) the amount of the component eluted in o-dichlorobenzene at a temperature of not higher than 40° C. is not more than 10 % by weight based on the total weight of the terpolymer and the amount of the component eluted in o-dichlorobenzene within the ±10° C. range of an elution peak temperature is not less than 75 % by weight based on the weight of the component eluted at a temperature of higher than 0° C.
摘要:
To provide a catalyst for olefin (co)polymerization which shows a high polymerization activity and which can produce olefin (co)polymers having a high molecular weight and a narrow molecular weight distribution; the catalyst for olefin (co)polymerization is rendered a carried type catalyst comprising a transition metal compound represented by general formula (I) or (II) and aluminoxane carried on a fine particulate carrier.
摘要:
Disclosed is a catalyst for olefin (co-)polymerization comprising a transition metal compound catalytic component which contains at least a titanium compound and an &agr;-olefin (co-)polymer (A) supported by the catalyst, wherein said &agr;-olefin (co-)polymer (A) has an intrinsic viscosity (&eegr;) of 15 dl/g to 100 dl/g measured in tetrahydronaphthalene at 135° C., and the content of said olefin (co-)polymer (a) is 0.01 to 5000 g for 1 g of the transition compound catalytic component.