公开(公告)号：US20090285017A1

公开(公告)日：2009-11-19

申请号：US12506637

申请日：2009-07-21

申请人： Kazutaka Yamane ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Tetsuya Yamamoto ,  Yutaka Higo ,  Yuki Oishi ,  Hiroshi Kano

发明人： Kazutaka Yamane ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Tetsuya Yamamoto ,  Yutaka Higo ,  Yuki Oishi ,  Hiroshi Kano

IPC分类号： G11C11/14

CPC分类号： G11C11/161 ,  G11C11/1659

摘要： A memory device is provided. The memory device includes a memory layer and a fixed-magnetization layer. The memory layer retains information based on a magnetization state of a magnetic material. The fixed-magnetization layer is formed on the memory layer through an intermediate layer made of an insulating material. The information is recorded on the memory layer with a change in a magnetization direction of the memory layer caused by injecting a spin-polarized electron in a stacked direction. A level of effective demagnetizing field, which is received by the memory layer, is smaller than a saturation-magnetization level of magnetization of the memory layer.

摘要翻译： 提供存储器件。 存储器件包括存储层和固定磁化层。 存储层基于磁性材料的磁化状态保留信息。 通过由绝缘材料制成的中间层，在存储层上形成固定磁化层。 信息通过沿堆叠方向注入自旋极化电子而引起的存储层的磁化方向的变化记录在存储层上。 由存储层接收的有效去磁场的电平小于存储层的磁化饱和磁化水平。

公开(公告)号：US20090281187A1

公开(公告)日：2009-11-12

申请号：US12064917

申请日：2006-08-25

申请人： Hiroshi Kano ,  Syuji Ikegami

发明人： Hiroshi Kano ,  Syuji Ikegami

IPC分类号： A61K31/192 ,  A61K31/136 ,  A61K31/122 ,  A61P37/08

CPC分类号： A61K31/122 ,  A61K31/135 ,  A61K31/136 ,  A61K31/192 ,  A61K31/196

摘要： The inventors have found that vitamin K3 and vitamin K5 which may be used in pharmaceuticals and foods or ACNQ, DHNA, or the like which can stimulate the growth of bifidobacteria can inhibit degranulation of basophil-like cells, exhibit a potent degranulation-inhibiting effect, and are useful anti-allergic agents or foods. The present invention provides an anti-allergic agent containing, as an active ingredient, one or more species selected from among 2-amino-3-carboxy-1,4-naphthoquinone, 1,4-dihydroxy-2-naphthoic acid, 1,4-naphthoquinone, 4-amino-2-methyl-1-naphthol, 2-methyl-1,4-naphthoquinone, 2-amino-3-chloro-1,4-naphthoquinone, and a salt thereof.

摘要翻译： 本发明人发现可用于药物和食品中的维生素K 3和维生素K5或可刺激双歧杆菌生长的ACNQ，DHNA等可以抑制嗜碱性粒细胞的脱颗粒，显示出有效的脱颗粒抑制作用， 并且是有用的抗过敏剂或食物。 本发明提供一种抗过敏剂，其含有选自2-氨基-3-羧基-1,4-萘醌，1,4-二羟基-2-萘甲酸，1,6-己二醇， 4-萘基醌，4-氨基-2-甲基-1-萘酚，2-甲基-1,4-萘醌，2-氨基-3-氯-1,4-萘醌及其盐。

公开(公告)号：US20090020585A1

公开(公告)日：2009-01-22

申请号：US12218440

申请日：2008-07-15

申请人： Atsushi Fukumoto ,  Hiroshi Kano ,  Akio Niikura ,  Yoichiro Bekki ,  Kenji Negura ,  Tatsuo Ozaki ,  Toshihide Ninagawa ,  Keiichi Okazaki

发明人： Atsushi Fukumoto ,  Hiroshi Kano ,  Akio Niikura ,  Yoichiro Bekki ,  Kenji Negura ,  Tatsuo Ozaki ,  Toshihide Ninagawa ,  Keiichi Okazaki

IPC分类号： B23K35/22 ,  B05D5/00 ,  B05D3/12 ,  C22F1/04

CPC分类号： B23K35/286 ,  B23K35/0233 ,  B23K2101/14 ,  B23K2103/10 ,  B32B15/016 ,  C22C21/00 ,  C22C21/02 ,  C22F1/04 ,  C22F1/043 ,  F28F21/089 ,  Y10T428/12764

摘要： An aluminum alloy brazing sheet having high strength comprising:a core alloy; an Al—Si-based filler alloy cladded on one side or both sides of the core alloy, wherein the core alloy is composed of an aluminum alloy containing 0.3-1.2% (mass %, the same applies the below) Si, 0.05-0.4% Fe, 0.3-1.2% Cu, 0.3-1.8% Mn, 0.05-0.6% Mg, and containing one or more elements selected from the group consisting of 0.02-0.3% Ti, 0.02-0.3% Zr, 0.02-0.3% Cr and 0.02-0.3% V, the balance of Al and unavoidable impurities; and wherein, after the aluminum alloy brazing sheet is subjected to brazing, the core alloy features a metallic structure in which a density of intermetallic compounds having a grain diameter of at least 0.1 μm is at most ten grains per μm2.

摘要翻译： 一种具有高强度的铝合金钎焊片，包括：芯合金; 在芯合金的一侧或两面上包覆的Al-Si系填充合金，其中，所述芯合金由含有0.3〜1.2％（质量％，以下相同）Si，0.05〜0.4 ％Fe，0.3-1.2％Cu，0.3-1.8％Mn，0.05-0.6％Mg，并且含有一种或多种选自0.02-0.3％Ti，0.02-0.3％Zr，0.02-0.3％Cr 和0.02-0.3％V，余量为Al和不可避免的杂质; 在铝合金钎焊片进行钎焊之后，芯合金的特征在于，具有至少0.1μm的粒径的金属间化合物的密度至多为10个/ m 2的金属结构。

公开(公告)号：US20080164547A1

公开(公告)日：2008-07-10

申请号：US11564595

申请日：2006-11-29

申请人： Yutaka Higo ,  Masanori Hosomi ,  Kazuhiro Bessho ,  Tetsuya Yamamoto ,  Hiroyuki Ohmori ,  Kazutaka Yamane ,  Yuki Oishi ,  Hiroshi Kano

发明人： Yutaka Higo ,  Masanori Hosomi ,  Kazuhiro Bessho ,  Tetsuya Yamamoto ,  Hiroyuki Ohmori ,  Kazutaka Yamane ,  Yuki Oishi ,  Hiroshi Kano

IPC分类号： H01L29/82

CPC分类号： H01L43/10 ,  B82Y10/00 ,  B82Y25/00 ,  H01L27/228 ,  H01L43/02 ,  H01L43/08

摘要： A storage element includes a storage layer configured to hold information by use of a magnetization state of a magnetic material, with a pinned magnetization layer being provided on one side of the storage layer, with a tunnel insulation layer, and with the direction of magnetization of the storage layer being changed through injection of spin polarized electrons by passing a current in the lamination direction, so as to record information in the storage layer, wherein a spin barrier layer configured to restrain diffusion of the spin polarized electrons is provided on the side, opposite to the pinned magnetization layer, of the storage layer; and the spin barrier layer includes at least one material selected from the group composing of oxides, nitrides, and fluorides.

摘要翻译： 存储元件包括存储层，其被配置为通过使用磁性材料的磁化状态来保持信息，其中钉扎磁化层设置在存储层的一侧上，具有隧道绝缘层，并且随着磁化方向的磁化方向 存储层通过沿层叠方向通过电流而注入自旋极化电子而改变，以便在存储层中记录信息，其中在侧面上设置有限制自旋极化电子扩散的自旋势垒层， 与存储层的钉扎磁化层相对; 并且自旋阻挡层包括从由氧化物，氮化物和氟化物组成的组中选择的至少一种材料。

公开(公告)号：US07315053B2

公开(公告)日：2008-01-01

申请号：US10480242

申请日：2003-04-08

申请人： Masanori Hosomi ,  Tetsuya Mizuguchi ,  Kazuhiro Ohba ,  Kazuhiro Bessho ,  Tetsuya Yamamoto ,  Hiroshi Kano

发明人： Masanori Hosomi ,  Tetsuya Mizuguchi ,  Kazuhiro Ohba ,  Kazuhiro Bessho ,  Tetsuya Yamamoto ,  Hiroshi Kano

IPC分类号： H01L29/76

CPC分类号： G01R33/093 ,  B82Y10/00 ,  B82Y25/00 ,  G11C11/15 ,  H01F10/3204 ,  H01F10/324 ,  H01F10/3254 ,  H01F10/3277 ,  H01L27/228 ,  H01L43/10

摘要： Write characteristics and read characteristics can be improved at the same time by applying novel materials to ferromagnetic layers. In a magnetoresistive effect element having a pair of ferromagnetic layers being opposed to each other through an intermediate layer to cause a current to flow in the direction perpendicular to the film plane to obtain a magnetoresistive change, at least one of the ferromagnetic layers contains a ferromagnetic material containing Fe, Co and B. The ferromagnetic material should preferably contain FeaCobNicBd (in the chemical formula, a, b, c and d represent atomic %. 5≦a≦45, 35≦b≦85, 0

摘要翻译： 通过将新材料应用于铁磁层，可以同时改善写入特性和读取特性。 在具有一对铁磁层的磁阻效应元件中，通过中间层彼此相对以使电流在垂直于膜平面的方向上流动以获得磁阻变化，至少一个铁磁层包含铁磁性层 含有Fe，Co和B的材料。铁磁材料应优选含有Fe，Co和B。 （在化学式中，a，b，c和d表示原子％5 <= a <= 45,35 <= b <= 85,0

公开(公告)号：US20060187703A1

公开(公告)日：2006-08-24

申请号：US11300554

申请日：2005-12-14

申请人： Tetsuya Mizuguchi ,  Masanori Hosomi ,  Kazuhiro Ohba ,  Kazuhiro Bessho ,  Yutaka Higo ,  Tetsuya Yamamoto ,  Takeyuki Sone ,  Hiroshi Kano

发明人： Tetsuya Mizuguchi ,  Masanori Hosomi ,  Kazuhiro Ohba ,  Kazuhiro Bessho ,  Yutaka Higo ,  Tetsuya Yamamoto ,  Takeyuki Sone ,  Hiroshi Kano

IPC分类号： G11C11/00

CPC分类号： H01L43/12 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G11C11/15 ,  H01F10/3204 ,  H01F10/324 ,  H01F10/3254 ,  H01F41/302 ,  H01L27/228 ,  Y10T29/49034

摘要： A magnetoresistive effect element (1) has an arrangement in which a pair of ferromagnetic material layers (magnetization fixed layer (5) and magnetization free layer (7)) is opposed to each other through an intermediate layer (6) to obtain a magnetoresistive change by causing a current to flow in the direction perpendicular to the layer surface and in which the ferromagnetic material layers are annealed by anneal including rotating field anneal and the following static field anneal. A magnetic memory device comprises this magnetoresistive effect element (1) and bit lines and word lines sandwiching the magnetoresistive effect element (1) in the thickness direction. When the magnetoresistive effect element (1) and the magnetic memory device are manufactured, the ferromagnetic material layers (5, 7) are annealed by rotating field anneal and the following static field anneal. There are provided the magnetoresistive effect element that can obtain excellent magnetic characteristics by controlling magnetic anisotropies of the ferromagnetic material layers, the magnetic memory device including this magnetoresistive effect element and which may have excellent write characteristics, and methods for manufacturing these magnetoresistive effect element and magnetic memory device.

摘要翻译： 磁阻效应元件（1）具有一对铁磁材料层（磁化固定层（5）和磁化自由层（7））通过中间层（6）彼此相对以获得磁阻变化的布置 通过使电流在垂直于层表面的方向上流动，并且其中铁磁材料层通过包括旋转场退火和随后的静态场退火的退火退火。 磁存储器件包括该磁阻效应元件（1）和在厚度方向上夹着磁阻效应元件（1）的位线和字线。 当制造磁阻效应元件（1）和磁存储器件时，铁磁材料层（5,7）通过旋转场退火和随后的静态场退火进行退火。 提供了通过控制铁磁材料层的磁各向异性，包括该磁阻效应元件并且可能具有优良写入特性的磁存储器件而获得优异的磁特性的磁阻效应元件，以及用于制造这些磁阻效应元件和磁 存储设备。

公开(公告)号：US20060114618A1

公开(公告)日：2006-06-01

申请号：US11235384

申请日：2005-09-26

申请人： Masanori Hosomi ,  Kazuhiro Ohba ,  Hiroshi Kano

发明人： Masanori Hosomi ,  Kazuhiro Ohba ,  Hiroshi Kano

IPC分类号： G11B5/127

CPC分类号： G11C11/16

摘要： A storage element 3 has an arrangement in which magnetization fixed layers 31 and 32 are provided above and below a storage layer 17 for storing information based on the magnetization state of a magnetic material through intermediate layers 16 and 18, directions of magnetizations M15 and M19 of ferromagnetic layers 15 and 19 closest to the storage layer 17 of the magnetization fixed layers 31 and 32 above and below the storage layer 17 are opposite to each other, the two intermediate layers 16 and 18 above and below the storage layer 17 have a significant difference between sheet resistivity values thereof and in which the direction of a magnetization M1 of the storage layer 17 is changed with application of an electric current to the lamination layer direction to record information on the storage layer 17.

摘要翻译： 存储元件3具有这样的配置，其中磁化固定层31和32设置在存储层17的上方和下方，用于基于通过中间层16和18的磁性材料的磁化状态来存储信息，磁化M15和M的方向 最靠近存储层17上方和下方的磁化固定层31和32的存储层17的铁磁层15和19彼此相反，存储层17上方和下方的两个中间层16和18具有 其中薄层电阻率值之间的显着差异，并且其中存储层17的磁化M 1的方向随施加到层压层方向的电流而改变，以将信息记录在存储层17上。

公开(公告)号：US20060093233A1

公开(公告)日：2006-05-04

申请号：US11258354

申请日：2005-10-26

申请人： Hiroshi Kano ,  Ryuuichirou Tominaga

发明人： Hiroshi Kano ,  Ryuuichirou Tominaga

IPC分类号： G06K9/40

CPC分类号： H04N5/23248 ,  H04N5/23264

摘要： A ringing reduction apparatus includes image restoration means for restoring an input image with image degradation to the image with less degradation using an image restoration filter; and weighted average means for performing weighted average of the input image and the restoration image obtained by the image restoration means. In the ringing reduction apparatus, the weighted average means performs the weighted average of the input image and the restoration image such that a degree of the input image is strengthened in a portion where ringing is conspicuous in the restoration image, and the weighted average means performs the weighted average of the input image and the restoration image such that a degree of the restoration image is strengthened in a portion where ringing is inconspicuous in the restoration image.

摘要翻译： 减振装置包括图像恢复装置，用于使用图像恢复滤波器将具有图像劣化的输入图像以较少的劣化恢复到图像; 以及用于执行由图像恢复装置获得的输入图像和恢复图像的加权平均值的加权平均装置。 在减音装置中，加权平均装置执行输入图像和恢复图像的加权平均，使得在恢复图像中振铃明显的部分中输入图像的程度被加强，并且加权平均装置执行 输入图像和恢复图像的加权平均值，使得恢复图像的程度在恢复图像中的振荡不显着的部分被加强。

公开(公告)号：US06990014B2

公开(公告)日：2006-01-24

申请号：US11078976

申请日：2005-03-11

申请人： Masanori Hosomi ,  Kazuhiro Bessho ,  Kazuhiro Ohba ,  Tetsuya Mizuguchi ,  Yutaka Higo ,  Takeyuki Sone ,  Tetsuya Yamamoto ,  Hiroshi Kano

发明人： Masanori Hosomi ,  Kazuhiro Bessho ,  Kazuhiro Ohba ,  Tetsuya Mizuguchi ,  Yutaka Higo ,  Takeyuki Sone ,  Tetsuya Yamamoto ,  Hiroshi Kano

IPC分类号： G11C11/00

CPC分类号： G11C11/16

摘要： In a magnetoresistive element which includes at least a pair of ferromagnetic layers stacked with having an intermediate layer inbetween and achieves a change in the magnetic resistance by permitting a current to flow in the direction which crosses the plane of the stacked layers, by virtue of having a construction wherein at least one ferromagnetic layer constituting an information recording layer has an amorphous structure containing a CoFeB or CoFeNiB alloy and has a plane form having a longer axis in one direction wherein both sides thereof along the longer axis direction form a straight line or a curved outward, and the both ends thereof in the longer axis direction form a curved or bent outward from, wherein the pattern form has an aspect ratio of 1:1.2 to 1:3.5, excellent asteroid curve having consistency in the properties can be stably obtained.

摘要翻译： 在一个磁阻元件中，至少包括一对铁磁层，它们之间层叠有一个中间层，并通过允许电流沿与层叠层的平面交叉的方向流动来实现磁阻的变化， 构成其中构成信息记录层的至少一个铁磁层具有包含CoFeB或CoFeNiB合金的非晶结构，并且具有在一个方向上具有长轴的平面形式，其中沿着长轴方向的两侧形成直线或 并且其长轴方向的两端形成弯曲或向外弯曲，其中图案形式的纵横比为1：1.2至1：3.5，可以稳定地获得性能一致的优异的小行星曲线 。

公开(公告)号：US20050237788A1

公开(公告)日：2005-10-27

申请号：US11100914

申请日：2005-04-07

申请人： Hiroshi Kano ,  Hiroyuki Ohmori

发明人： Hiroshi Kano ,  Hiroyuki Ohmori

IPC分类号： G11C11/15 ,  G11C11/16 ,  G11C11/56 ,  G11C19/08 ,  H01L21/8246 ,  H01L27/105

CPC分类号： G11C11/16 ,  G11C11/5607

摘要： A magnetic memory includes magnetic memory elements 3 and 5 having memory layers capable of storing information by the magnetized state of a magnetic material, in which a plurality of magnetic memory elements 3 and 5 is electrically connected in series or in parallel to each other near an intersection point between two kinds of interconnections 1 and 6 which cross each other and between the two kinds of the interconnections 1 and 6, threshold values of recording electric currents by which information can be recorded on a plurality of magnetic memory elements 3 and 5 are made different from each other and the memory layers of the respective magnetic memory elements 3 and 5 comprise different information storage units. Thus, the magnetic memory becomes able to record much more information per unit area.

摘要翻译： 磁存储器包括具有能够通过磁性材料的磁化状态存储信息的存储层的磁存储元件3和5，其中多个磁存储元件3和5彼此串联或并联电连接在一个 在两种互连1和6之间彼此交叉并且在两种互连1和6之间的两种互连1和6之间的交点，制成了可以将信息记录在多个磁存储元件3和5上的记录电流的阈值 各个磁存储元件3和5的存储层彼此不同，包括不同的信息存储单元。 因此，磁存储器能够记录每单位面积更多的信息。