公开(公告)号：US20060244091A1

公开(公告)日：2006-11-02

申请号：US11395890

申请日：2006-03-30

Applicant: Shuichi Kikuchi ,  Shigeaki Okawa ,  Kiyofumi Nakaya ,  Toshiyuki Takahashi

Inventor： Shuichi Kikuchi ,  Shigeaki Okawa ,  Kiyofumi Nakaya ,  Toshiyuki Takahashi

IPC: H01L31/07

CPC classification number: H01L29/872 ,  H01L27/0255 ,  H01L29/0692 ,  H01L29/8611 ,  H01L29/868

Abstract: In a semiconductor device of the present invention, a protection diode for protecting a device is formed on an epitaxial layer formed on a substrate. A Schottky barrier metal layer is formed on a surface of the epitaxial layer and a P-type diffusion layer is formed at a lower portion of an end portion of the Schottky barrier metal layer. Then, P-type diffusion layers are formed in a floating state closer to a cathode region side than the P-type diffusion layer, and are capacitively coupled with a metal layer to which an anode potential is applied. This structure reduces a large change in a curvature of a depletion layer, thereby improving a withstand voltage characteristic of the protection diode.

Abstract translation: 在本发明的半导体器件中，在形成在基板上的外延层上形成用于保护器件的保护二极管。 在外延层的表面上形成肖特基势垒金属层，在肖特基势垒金属层的端部的下部形成P型扩散层。 然后，P型扩散层形成为比P型扩散层更靠近阴极区域的浮置状态，并且与施加有阳极电位的金属层电容耦合。 这种结构减小了耗尽层的曲率的大的变化，从而提高了保护二极管的耐电压特性。

公开(公告)号：US20060220125A1

公开(公告)日：2006-10-05

申请号：US11393530

申请日：2006-03-29

Applicant: Seiji Otake ,  Shuichi Kikuchi

Inventor： Seiji Otake ,  Shuichi Kikuchi

IPC: H01L29/76

CPC classification number: H01L29/0847 ,  H01L29/1083 ,  H01L29/456 ,  H01L29/7833

Abstract: In a semiconductor device of the present invention, a thin gate oxide film is formed on a P-type diffusion layer. On the gate oxide film, a gate electrode is formed. N-type diffusion layers are formed in the P-type diffusion layer, and the N-type diffusion layer is used as a drain region. The N-type diffusion layer is diffused in a γ shape at least below the gate electrode. With the structure described above, a diffusion region of the N-type diffusion layer expands and comes to be a low-concentration region in the vicinity of a surface of an epitaxial layer. Thus, it is possible to reduce an electric field from the gate electrode and an electric field between a source and a drain.

公开(公告)号：US07103900B2

公开(公告)日：2006-09-05

申请号：US11038955

申请日：2005-01-18

Applicant: Yuji Iwaki ,  Shuichi Kikuchi ,  Teiko Hoshi ,  Naoki Inoue ,  Manabu Obata ,  Mitsuyoshi Kawaguchi

Inventor： Yuji Iwaki ,  Shuichi Kikuchi ,  Teiko Hoshi ,  Naoki Inoue ,  Manabu Obata ,  Mitsuyoshi Kawaguchi

IPC: G11B23/03

CPC classification number: G11B23/0326 ,  G11B23/0308 ,  G11B23/0316

Abstract: The present invention is relative to a disc cartridge in which an optical disc (3), an inner shell (4) and shutter members (5a), (5b) are housed in a main cartridge body unit (2), formed by abutting and combining upper and lower shells (6), (7), and in which the inner shell is run in rotation to cause the shutter members (5a), (5b) to open or close an aperture (24) provided in the main cartridge body unit (2). On an inner side of the peripheral wall sections of the upper and lower shells, abutted to each other, a crank-shaped dust intrusion prohibiting unit (21A) is provided for prohibiting intrusion of dust and dirt from the abutting surfaces of the peripheral wall sections of the upper and lower shells towards the optical disc housed in the main cartridge body unit to protect the optical disc housed in the main cartridge body unit. The inner shell provided in the main cartridge body unit includes an aperture (44) in register with an aperture in the main cartridge body unit, and includes a connecting portion (43a) bridging an open end side of the aperture. This connecting portion has a height not protruding towards the lower shell.

Abstract translation: 本发明是相对于其中光盘（3），内壳（4）和挡板部件（5a），（5b）容纳在主盒体单元（2）中的盘盒，由主盒体 抵靠和组合上壳体和下壳体（6），（7），并且其中内壳旋转运动，以使活门构件（5a），（5b）打开或关闭设置在其中的孔（24） 主盒体单元（2）。 在上壳体和下壳体的周壁部分的内侧彼此邻接，设置有曲柄形的防尘侵入单元（21A），用于防止灰尘和污物从周壁的邻接表面侵入 上壳体和下壳体的部分朝向容纳在主盒体单元中的光盘以保护容纳在主盒体单元中的光盘。 设置在主盒体单元中的内壳包括与主盒体单元中的孔对准的孔（44），并且包括桥接孔的开口端侧的连接部分（41a）。 该连接部分具有不向下壳体突出的高度。

公开(公告)号：US20060018244A1

公开(公告)日：2006-01-26

申请号：US11235966

申请日：2005-09-27

Applicant: Shuichi Kikuchi ,  Rie Izu ,  Mariko Takiue

Inventor： Shuichi Kikuchi ,  Rie Izu ,  Mariko Takiue

IPC: G11B7/24

CPC classification number: B41M5/52 ,  B41M5/5209 ,  B41M5/5254 ,  G11B7/24012 ,  G11B7/252 ,  G11B23/40

Abstract: An optical information medium having an ink-accepting layer that may secure a high-gloss printed surface similar to print image quality of print image on photographic paper is provided. The optical disk is constituted by sequentially laminating concavo-convex information pits, a recording layer, a reflective layer, a protective layer, a second printing layer, and an ink-accepting layer on a transparent substrate made of synthetic resin such as polycarbonate. In the formation of the ink-accepting layer, the following proportions of the following constituents in percent by weight are milled to prepare an ink for printing: 5 to 15% urethane acrylate; 70 to 80% water-soluble monomer; 5 to 15% water-soluble monomer soluble resin; 5 to 15% photopolymerization initiator; 5 to 15% dyestuff fixing agent; and

公开(公告)号：US06951027B2

公开(公告)日：2005-09-27

申请号：US10262099

申请日：2002-09-30

Applicant: Shuichi Kikuchi ,  Rie Izu ,  Mariko Takiue

Inventor： Shuichi Kikuchi ,  Rie Izu ,  Mariko Takiue

IPC: B41J2/01 ,  B32B3/02 ,  B41M5/26 ,  B41M5/52 ,  C09D11/00 ,  G11B3/70 ,  G11B5/84 ,  G11B7/24012 ,  G11B7/24097 ,  G11B7/252 ,  G11B7/26 ,  G11B7/24

CPC classification number: B41M5/52 ,  B41M5/5209 ,  B41M5/5254 ,  G11B7/24012 ,  G11B7/252 ,  G11B23/40

Abstract: An optical information medium having an ink-accepting layer that may secure a high-gloss printed surface similar to print image quality of print image on photographic paper is provided. The optical disk 1 is constituted by sequentially laminating concavo-convex information pits 3, a recording layer 4, a reflective layer 5, a protective layer 6, a second printing layer 7, and an ink-accepting layer 8 on a transparent substrate 2 made of synthetic resin such as polycarbonate. In the formation of the ink-accepting layer 8, the following proportions of the following constituents in percent by weight are milled to prepare an ink for printing: 5 to 15% urethane acrylate; 70 to 80% water-soluble monomer; 5 to 15% water-soluble monomer soluble resin; 5 to 15% photopolymerization initiator; 5 to 15% dyestuff fixing agent; and

Abstract translation: 提供了一种光学信息介质，其具有可以确保在照相纸上打印图像的打印图像质量类似的高光泽印刷表面的墨接受层。 光盘1通过在形成的透明基板2上依次层叠凹凸信息凹坑3，记录层4，反射层5，保护层6，第二印刷层7和墨接受层8 的合成树脂如聚碳酸酯。 在形成油墨接收层8时，将以下重量百分比的组分按比例进行研磨，制备印刷油墨：5〜15％的氨基甲酸酯丙烯酸酯; 70〜80％水溶性单体; 5〜15％水溶性单体可溶性树脂; 5〜15％光聚合引发剂; 5〜15％染料固色剂; 和<5％二氧化硅。

公开(公告)号：US20050117252A1

公开(公告)日：2005-06-02

申请号：US10993559

申请日：2004-11-19

Applicant: Shuichi Kikuchi ,  Osamu Yamaura ,  Kazuo Sasaki ,  Hitomi Chiba

Inventor： Shuichi Kikuchi ,  Osamu Yamaura ,  Kazuo Sasaki ,  Hitomi Chiba

IPC: G11B23/107 ,  G11B15/30 ,  G11B23/02 ,  G11B25/06

CPC classification number: G11B23/107

Abstract: A tape cartridge is configured to include a cartridge case, a hub, around which a magnetic tape is wound around and is housed in the cartridge case rotatably, and a drive apparatus for driving the hub to rotate, the drive apparatus being arranged between a bottom portion of the hub and the cartridge case.

Abstract translation: 磁带盒被配置为包括盒壳体，轮毂，磁带围绕其缠绕并被容纳在盒壳体中可旋转的驱动装置和用于驱动轮毂旋转的驱动装置，驱动装置布置在底部 轮毂和盒体的一部分。

公开(公告)号：US06897525B1

公开(公告)日：2005-05-24

申请号：US09444819

申请日：1999-11-22

Applicant: Shuichi Kikuchi ,  Yumiko Akaishi

Inventor： Shuichi Kikuchi ,  Yumiko Akaishi

IPC: H01L21/336 ,  H01L21/8234 ,  H01L27/148 ,  H01L29/08 ,  H01L29/68 ,  H01L29/76 ,  H01L29/78 ,  H01L29/94 ,  H01L31/062

CPC classification number: H01L29/66659 ,  H01L21/823418 ,  H01L21/823462 ,  H01L27/1463 ,  H01L29/0847 ,  H01L29/7833 ,  H01L29/7835

Abstract: In order to improve the characteristics of the high breakdown voltage MOS, a semiconductor device of the present invention is characterized in that an LDMOS transistor, which comprises a source region 4, a channel region 8, and a drain region 5, and a gate electrode 7 formed on the channel region 8, and a drift region formed between the channel region 8 and the drain region 5, wherein an N−-type low concentration layer 22 serving as the drift region is formed shallowly at least below the gate electrode 7 (first N−-type layer 22A) but formed deeply in a neighborhood of the drain region 5 (second N−-type layer 22B).

Abstract translation: 为了提高高击穿电压MOS的特性，本发明的半导体器件的特征在于，包括源极区域4，沟道区域8和漏极区域5的LDMOS晶体管和栅极电极 7，形成在沟道区域8和漏极区域5之间的​​漂移区域，其中用作漂移区域的N + - 低浓度层22浅浅地形成 至少在栅极电极7（第一N +型层22 A）的下方形成，但是深深地形成在漏极区域5的附近（第二N + - 层22B ）。

公开(公告)号：US06893926B2

公开(公告)日：2005-05-17

申请号：US10603083

申请日：2003-06-25

Applicant: Shuichi Kikuchi ,  Masafumi Uehara ,  Eiji Nishibe ,  Katsuyoshi Anzai

Inventor： Shuichi Kikuchi ,  Masafumi Uehara ,  Eiji Nishibe ,  Katsuyoshi Anzai

IPC: H01L29/06 ,  H01L29/08 ,  H01L29/78 ,  H01L21/336

CPC classification number: H01L29/0626 ,  H01L29/0847 ,  H01L29/7835

Abstract: A withstand voltage against electrostatic discharge of a high voltage MOS transistor is improved. An N−-type drain layer is not formed under an N+-type drain layer, while a P+-type buried layer is formed in a region under the N+-type drain layer. A PN junction of high impurity concentration is formed between the N+-type drain layer and the P+-type buried layer. In other words, a region having low junction breakdown voltage is formed locally. The surge current flows through the PN junction into the silicon substrate before the N−-type drain layer below a gate electrode is thermally damaged. Hence, the ESD withstand voltage is improved.

Abstract translation: 耐高压MOS晶体管的耐电压提高。 在N + +型漏极层之下不形成N +型漏极层，而形成P + +型掩埋层 在N + +漏极层下方的区域中。 在N + +型漏极层和P + + +型掩埋层之间形成高杂质浓度的PN结。 换句话说，局部形成具有低结击穿电压的区域。 在栅电极下方的N +型漏极层受热损伤之前，浪涌电流通过PN结流入硅衬底。 因此，ESD耐受电压提高。

公开(公告)号：US06740932B2

公开(公告)日：2004-05-25

申请号：US09837397

申请日：2001-04-18

Applicant: Shuichi Kikuchi ,  Eiji Nishibe ,  Takuya Suzuki

Inventor： Shuichi Kikuchi ,  Eiji Nishibe ,  Takuya Suzuki

IPC: H01L2976

CPC classification number: H01L29/66659 ,  H01L29/0847 ,  H01L29/7835

Abstract: A semiconductor device has a gate electrode formed on P type semiconductor substrate through a gate insulation film, a low concentration N− type drain region formed so as to be adjacent to the gate electrode, a high concentration N+ type drain region separated from the other end of said gate electrode and included in said low N− type drain region, and a middle concentration N type layer at a region spanning at least from said gate electrode to said high concentration N+ type drain region, and formed so that impurity concentration becomes low at a region near the gate electrode.

Abstract translation: 半导体器件具有通过栅极绝缘膜形成在P型半导体衬底上的栅极电极，与栅电极相邻形成的低浓度N-型漏极区域，与另一端分离的高浓度N +型漏极区域 并且包括在所述低N型漏极区中的中等浓度N型层和至少从所述栅电极到所述高浓度N +型漏极区的区域的中等浓度N型层，并且形成为使得杂质浓度变低 栅电极附近的区域。

公开(公告)号：US06737707B2

公开(公告)日：2004-05-18

申请号：US10215188

申请日：2002-08-09

Applicant: Shuichi Kikuchi ,  Masaaki Momen

Inventor： Shuichi Kikuchi ,  Masaaki Momen

IPC: H01L2712

CPC classification number: H01L29/66537 ,  H01L29/42368 ,  H01L29/66659 ,  H01L29/7835

Abstract: A transistor of a semiconductor device has an increased driving capacity. The semiconductor device has a first gate insulation film formed by a selective oxidation, a second gate insulation film formed by thermal oxidation and a gate electrode formed across the first and the second gate insulation films. The second gate insulation film is composed of a thicker gate insulation film and a thinner gate insulation film.

Abstract translation: 半导体器件的晶体管具有增加的驱动能力。 半导体器件具有通过选择性氧化形成的第一栅极绝缘膜，通过热氧化形成的第二栅极绝缘膜和跨越第一和第二栅极绝缘膜形成的栅电极。 第二栅极绝缘膜由较厚的栅极绝缘膜和较薄的栅极绝缘膜组成。