摘要:
A high-temperature superconducting thin film of compound oxide selected from the group consisting of:Y.sub.1 Ba.sub.2 Cu.sub.3 O.sub.7-x, Ho.sub.1 Ba.sub.2 Cu.sub.3 O.sub.7-x, Lu.sub.1 Ba.sub.2 Cu.sub.3 O.sub.7-x,Sm.sub.1 Ba.sub.2 Cu.sub.3 O.sub.7-x, Nd.sub.1 Ba.sub.2 Cu.sub.3 O.sub.7-x, Gd.sub.1 Ba.sub.2 Cu.sub.3 O.sub.7-x,Eu.sub.1 Ba.sub.2 Cu.sub.3 O.sub.7-x, Er.sub.1 Ba.sub.2 Cu.sub.3 O.sub.7-x, Dy,Ba.sub.2 Cu.sub.3 O.sub.7-x,Tm.sub.1 Ba.sub.2 Cu.sub.3 O.sub.7-x, Yb.sub.1 Ba.sub.2 Cu.sub.3 O.sub.7-x La.sub.1 Ba.sub.2 Cu.sub.3 O.sub.7-x,(La, Sr).sub.2 CuO.sub.4-x,which is deposited on a substrate of sapphire, with the outer surface of the high-temperature superconducting thin film being covered with a protective crystalline film of SrTiO.sub.3.
摘要:
A process for manufacturing a superconducting elongated article such as a superconducting wire which is applicable for manufacturing a superconducting coil or the like. The process includes steps comprising filling a metal pipe with material powder of ceramic consisting of compound oxide having superconductivity, performing plastic deformation of the metal pipe filled with the ceramic metal powder to reduce the cross section of the metal pipe, and then subjecting the deformed metal pipe to heat-treatment to sinter the ceramic material powder filled in the metal pipe. The ceramic material powder may contain compound oxide having Perovskite-type crystal structure exhibiting superconductivity.The metal pipe may selected from a group comprising metals of Ag, Au, Pt, Pd, Rh, Ir, Ru, Os, Cu, Al, Fe, Ni, Cr, Ti, Mo, W and Ta and alloys including these metals as the base. The heat-treatment may be carried out at a temperature ranging from 700 to 1,000.degree. C., The plastic deformation of the metal pipe filled with the ceramic metal powder may be performed in such manner that the cross section of the metal pipe is reduced at a dimensional reduction ratio ranging from 16% to 92% by wire-drawing or forging by means of dies, roller dies, or extruder.
摘要:
A semiconductor substrate comprising a single crystal substrate base such a silicon and a superconducting thin film layer deposited on said substrate base and composed of compound oxide such as Ln.sub.1 Ba.sub.2 Cu.sub.3 O.sub.7-.delta.. (Ln is lanthanide).
摘要:
A substrate having a superconducting thin film of compound oxide thereon. An intermediate layer consists of at least one layer of copper-containing oxide is interposed between the substrate and the superconducting thin film.
摘要:
An outer surface of a superconducting thin film of compound oxide such as YBa.sub.2 Cu.sub.3 O.sub.7-.delta. deposited on a substrate such as MgO and SrTiO.sub.3 is protected with a protective layer which is composed of amorphous inorganic material such as inorganic glass, amorphous oxide.
摘要:
A process for producing a superconducting material comprising a compound oxide represented by the general formula:(Ba, Ca).sub.x (.alpha., Dy).sub.1-x Tl.sub.y Cu.sub.1-y O.sub.3-zwherein ".alpha." represents Y or La; the atomic ratio of Ca to Ba is between 1% and 90%; the atomic ratio of Dy to .alpha. is between 1% and 90%; x, y and z are within the ranges of 0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1, and 0.ltoreq.z
摘要:
A compound oxide superconductor represented by the general formula:Bi.sub.4+d (Sr.sub.1-x, Ca.sub.x).sub.m Cu.sub.n O.sub.p+yin which,"d" is an amount of excess bismuth and satisfies a range of 0
摘要:
Improvement in a superconducting thin film of compound oxide represented by the formula: LnBa.sub.2 Cu.sub.3 O.sub.7- .delta. (Ln is lanthanide) or (La.sub.1-x .alpha..sub.x).sub.2 CuO.sub.4 (.alpha. is Ba or Sr) deposited on a substrate or core made of MgO, SrTiO.sub.3 or ZrO.sub.2 by physical vapor deposition technique, the surface roughness R.sub.max (datum length=1,000 .mu.m) of the superconducting thin film being less than 0.2 .mu.m.
摘要:
A now superconducting material comprising a compound oxide represented by the general formula:(Ba, Ca).sub.x (.alpha., Dy).sub.1-x Tl.sub.y Cu.sub.1-y O.sub.3-zwherein".alpha." represents Y or La;the atomic ratio of Ca to Ba is between 1% and 90%;the atomic ratio of Dy to .alpha. is between 1% and 90%;x, y and z are within the ranges of 0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1, and 0.ltoreq.z