摘要:
Disclosed is a solar cell comprising a solar cell semiconductor thin film formed on a base, a transparent conductive film formed on the semiconductor thin film, and a nitride-containing moisture diffusion-preventing film which covers the upper surface of the transparent conductive film. The moisture diffusion-preventing film is preferably composed of at least a silicon nitride film or a silicon carbide nitride (SiCN) film.
摘要:
[Problem] To improve polishing efficiency while lowering shear force added to semiconductor wafers while increasing polishing speed, without damaging the wafer's processing surface or the membrane under it.[Solution Method] Pressing the revolving head or carrier 34 that holds fixed the semiconductor wafer 10 to the polishing pad or polishing cloth 30 attached to rotating polishing table 32 in this CMP device and while rotating carrier 34 and polishing table 32 respectively, and supplying liquid slurry to polishing pad 30 from nozzle 36, planarization by chemical processes and mechanical processes is carried out by removing membranes of the lower face of semiconductor wafer 10 (the processing surface). The chemical mechanical polishing process of the present invention in regard to the size of the relationship between the rotation rate of semiconductor wafer 10 fW and the number of rotations of polishing pad 30 fP has 3 fp
摘要:
A base is formed of a material, such as SiC, having mechanical characteristics higher than those of silicon for forming a semiconductor layer, and the base and the semiconductor layer are bonded through an insulating layer. After bonding, an SOI substrate is formed by mechanically separating the semiconductor layer from the base, and the separated semiconductor layer is reused for forming the subsequent SOI substrate. Thus, a large SOI substrate having a diameter of 400 mm or more, which has been difficult to obtain by conventional methods, can be obtained.
摘要:
The present invention relates to a semiconductor device comprising an insulation film consisting of a fluoridation carbon film that has been subjected to thermal history of 420° C. or lower. The feature of the present invention is that an amount of hydrogen atoms included in the fluoridation carbon film is 3 atomic % or less before the fluoridation carbon film is subjected to the thermal history.
摘要:
A multilayered circuit board which is provided with a low-permittivity interlayer insulating film, and which can significantly improve the performance such as signal transmission characteristics of the multilayered circuit board such as a package and a printed board, because the surface in contact with the interlayer insulating film of the circuit board has no unevenness to eliminate the lowering of production yield and the deterioration of high-frequency signal transmission characteristics; and electronic equipment using the circuit board. The multilayered circuit board comprises, mounted on a substrate, plural wiring layers and plural insulating layers positioned between the plural wiring layers, wherein at least part of the plural insulating layers are composed of a porous insulating layer containing at least any of materials selected from a porous material group consisting of porous material, aerogel, porous silica, porous polymer, hollow silica and hollow polymer, and a non-porous insulating layer formed on at least one surface of the porous insulating layer and not containing the porous material group.
摘要:
A method of manufacturing a semiconductor device including a sputtering process for forming a barrier film mainly having tantalum or tantalum nitride on an interlayer insulator formed by sputtering using a xenon gas. The sputtering process may include a step of forming one barrier film mainly composed of tantalum nitride on a substrate by sputtering using a xenon gas by applying a RF bias, and a step for forming another barrier film mainly composed of tantalum on the first barrier film by sputtering using a xenon gas without applying the RF bias. The barrier film may be formed by changing the RF bias continuously, and forming the interlayer insulator side by applying the RF bias, and forming the wiring side without applying the RF bias.
摘要:
For equalizing the rising and falling operating speeds in a CMOS circuit, it is necessary to make the areas of a p-type MOS transistor and an n-type MOS transistor different from each other due to a difference in carrier mobility therebetween. This area unbalance prevents an improvement in integration degree of semiconductor devices.The NMOS transistor and the PMOS transistor each have a three-dimensional structure with a channel region on both the (100) plane and the (110) plane so that the areas of the channel regions and gate insulating films of both transistors are equal to each other. Accordingly, it is possible to make the areas of the gate insulating films and so on equal to each other and also to make the gate capacitances equal to each other. Further, the integration degree on a substrate can be improved twice as much as that in the conventional technique.
摘要:
The application of oxynitriding treatment to electronic appliances involve the problem that N2 ions are formed to thereby damage any oxynitride film. It is intended to provide a method of plasma treatment capable of realizing high-quality oxynitriding and to provide a process for producing an electronic appliance in which use is made of the method of plasma treatment. There is provided a method of plasma treatment, comprising generating plasma with a gas for plasma excitation and introducing a treating gas in the plasma to thereby treat a treatment subject, wherein the treating gas contains nitrous oxide gas, this nitrous oxide gas introduced in a plasma of
摘要:
In order to provide a semiconductor device having good quality by keeping the relative permittivity of a High-K insulation film in a high state, or to provide a method for manufacturing a semiconductor device in which the relative permittivity of the High-K insulation film can be kept in a high state, a semiconductor device is disclosed that includes a silicon substrate, a gate electrode layer, and a gate insulation film between the silicon substrate and the gate electrode layer. The gate insulation film is a high relative permittivity (high-k) film being formed by performing a nitriding treatment on a mixture of a metal and silicon. The High-K film itself becomes a nitride so as to prevent SiO2 from being formed.
摘要:
A MIS transistor, formed on a semiconductor substrate, assumed to comprise a semiconductor substrate (702, 910) comprising a projecting part (704, 910B) with at least two different crystal planes on the surface on a principal plane, a gate insulator (708, 920B) for covering at least a part of each of said at least two different crystal planes constituting the surface of the projecting part, a gate electrode (706, 930B), comprised on each of said at least two different crystal planes constituting the surface of the projecting part, which sandwiches the gate insulator with the said at least two different planes, and a single conductivity type diffusion region (710a, 710b, 910c, 910d) formed in the projecting part facing each of said at least two different crystal planes and individually formed on both sides of the gate electrode. Such a configuration allows control over increase in the element area and increase of channel width.