公开(公告)号：US20090135109A1

公开(公告)日：2009-05-28

申请号：US12273745

申请日：2008-11-19

申请人： Tadahiro Ohmi ,  Tetsuya Goto ,  Takaaki Matsuoka

发明人： Tadahiro Ohmi ,  Tetsuya Goto ,  Takaaki Matsuoka

IPC分类号： H01J1/62 ,  C23C14/35 ,  G09G3/30

CPC分类号： H01L51/5092 ,  H01L51/0021 ,  H01L51/5221 ,  H01L51/56

摘要： In an organic EL element having a transparent conductive electrode and a cathode opposed to the transparent conductive electrode, the cathode includes a film of a rare earth element that can be sputtered. The film of the rare earth element having a low work function, for example, a LaB6 film, can be formed uniformly over a wide area on an electron injection layer by a rotary magnet sputtering apparatus.

摘要翻译： 在具有透明导电电极和与透明导电电极相对的阴极的有机EL元件中，阴极包括能够被溅射的稀土元素的膜。 可以通过旋转磁体溅射装置在电子注入层的广泛区域上均匀地形成具有低功函数的稀土元素的膜，例如LaB 6膜。

公开(公告)号：US20090104787A1

公开(公告)日：2009-04-23

申请号：US11917013

申请日：2006-06-07

申请人： Tadahiro Ohmi ,  Akinobu Teramoto ,  Minoru Honda ,  Toshio Nakanishi

发明人： Tadahiro Ohmi ,  Akinobu Teramoto ,  Minoru Honda ,  Toshio Nakanishi

IPC分类号： H01L21/31 ,  G05B19/00 ,  C23C16/34

CPC分类号： H01L21/3185

摘要： A nitriding process is performed at a process temperature of 500° C. or more by causing microwave-excited high-density plasma of a nitrogen-containing gas to act on silicon in the surface of a target object, inside a process container of a plasma processing apparatus. The plasma is generated by supplying microwaves into the process container from a planar antenna having a plurality of slots.

摘要翻译： 通过使含氮气体的微波激发的高密度等离子体作用在目标物体的表面的硅上，等离子体的处理容器内，在500℃以上的过程温度下进行氮化处理 处理装置。 通过从具有多个槽的平面天线向处理容器提供微波产生等离子体。

公开(公告)号：US07501764B2

公开(公告)日：2009-03-10

申请号：US10546182

申请日：2004-02-18

申请人： Tadahiro Ohmi ,  Yasuyuki Shirai ,  Akihiro Morimoto

发明人： Tadahiro Ohmi ,  Yasuyuki Shirai ,  Akihiro Morimoto

IPC分类号： H01J61/04 ,  H01J61/06

CPC分类号： H01J61/0677 ,  H01J61/0672 ,  H01J61/16

摘要： A cold cathode fluorescent tube where an electron emitting electrode is sealed in shows much deterioration in the luminance with time, thereby being not adequate for a long time use. The electrode emitting electrode is formed in such a shape that an electric field is not locally concentrated. By mixing a material of high heat conductivity, such as tungsten, as the material for the electron emitting electrode or using helium of high heat conductivity as the sealing gas, a long life of the cold cathode fluorescent tube is achieved.

摘要翻译： 其中电子发射电极被密封的冷阴极荧光管显示出随时间的亮度的很大的劣化，从而不能长时间使用。 电极发射电极形成为电场不局部集中的形状。 通过将诸如钨的高导热性材料作为电子发射电极的材料或使用具有高导热性的氦气作为密封气体，可以实现冷阴极荧光管的长寿命。

公开(公告)号：US07491656B2

公开(公告)日：2009-02-17

申请号：US10943841

申请日：2004-09-20

申请人： Tadahiro Ohmi

发明人： Tadahiro Ohmi

IPC分类号： H01L21/31

CPC分类号： H01L27/1214 ,  H01L21/28194 ,  H01L21/28211 ,  H01L21/28238 ,  H01L29/4908 ,  H01L29/518 ,  H01L2924/0002 ,  H01L2924/00

摘要： A silicon oxide film (1701) serving as a gate insulating film of a semiconductor device contains Kr. Therefore, the stress in the silicon oxide film (1701) and the stress at the interface between silicon and the silicon oxide film are relaxed, and the silicon oxide film has a high quality even though it was formed at a low temperature. The uniformity of thickness of the silicon oxide film (1701) on the silicon of the side wall of a groove (recess) in the element isolating region is 30% or less. Consequently, the silicon oxide film (1701) has its characteristics and reliability superior to those of a silicon thermal oxide film, and the element isolating region can be made small, thereby realizing a high-performance transistor integrated circuit preferably adaptable to an SOI transistor and a TFT.

摘要翻译： 用作半导体器件的栅极绝缘膜的氧化硅膜（1701）包含Kr。 因此，氧化硅膜（1701）中的应力和硅与氧化硅膜之间的界面处的应力被松弛，并且氧化硅膜即使在低温下形成也具有高质量。 元件隔离区域的槽（凹部）的侧壁的硅上的氧化硅膜（1701）的厚度的均匀度为30％以下。 因此，氧化硅膜（1701）的特性和可靠性优于硅热氧化膜，可以使元件隔离区域变小，从而实现优选适于SOI晶体管的高性能晶体管集成电路， 一个TFT。

公开(公告)号：US20090023231A1

公开(公告)日：2009-01-22

申请号：US12223385

申请日：2007-01-30

申请人： Tadahiro Ohmi ,  Hitoshi Morinaga

发明人： Tadahiro Ohmi ,  Hitoshi Morinaga

IPC分类号： H01L21/66 ,  H01L21/306 ,  B08B7/00

CPC分类号： H01L21/02052 ,  H01L21/02074

摘要： Surface treatment is performed with a liquid, while shielding a semiconductor surface from light. When the method is employed for surface treatment in wet processes such as cleaning, etching and development of the semiconductor surface, increase of surface microroughness can be reduced. Thus, electrical characteristics and yield of the semiconductor device are improved.

摘要翻译： 用液体进行表面处理，同时将半导体表面从光屏蔽。 当在诸如清洁，蚀刻和半导体表面的显影的湿法中使用该方法进行表面处理时，可以降低表面微粗糙度的增加。 因此，提高了半导体器件的电特性和产量。

公开(公告)号：US07472887B2

公开(公告)日：2009-01-06

申请号：US10545672

申请日：2004-02-09

申请人： Tadahiro Ohmi ,  Nobukazu Ikeda ,  Michio Yamaji ,  Masafumi Kitano ,  Akihiro Morimoto

发明人： Tadahiro Ohmi ,  Nobukazu Ikeda ,  Michio Yamaji ,  Masafumi Kitano ,  Akihiro Morimoto

IPC分类号： F16K7/17

CPC分类号： F16K7/14 ,  F16K27/003 ,  F16K51/02

摘要： The present invention provides a valve which makes it possible to reduce the diameter of the vacuum exhaustion pipings for making the facility for the vacuum exhaustion system small, as a result lowering the costs, and making the vacuum exhaustion time short, and also which can prevent the corrosions, cloggings, and seal leakages inside the piping system caused by the accumulation of substances produced by the decomposition of the gas.Specifically, the aluminum passivation is applied on the piping parts, i.e. the valve and others, used in the vacuum exhaustion system to inhibit the gas decomposition caused by the temperature rise at the time of the baking so that components for the reduction in the diameter size in the vacuum exhaustion system are provided. The corrosions, cloggings and seat leakages caused by the gas decomposition are prevented.

摘要翻译： 本发明提供一种阀，其能够减小用于真空排气系统的设备的真空排气管的直径，结果是降低成本，并且使真空耗尽时间短，并且还可以防止 由气体分解产生的物质的积聚引起的管道系统内的腐蚀，堵塞和密封泄漏。 具体地说，在真空耗尽系统中使用的管道部件即阀门等上施加铝钝化，以抑制由烘烤时的温度升高引起的气体分解，从而减小直径尺寸的部件 在真空耗尽系统中提供。 防止气体分解引起的腐蚀，堵塞和座椅泄漏。

公开(公告)号：US20080302406A1

公开(公告)日：2008-12-11

申请号：US11631285

申请日：2005-06-24

申请人： Tadahiro Ohmi ,  Akihiro Morimoto ,  Kiwamu Takehisa

发明人： Tadahiro Ohmi ,  Akihiro Morimoto ,  Kiwamu Takehisa

IPC分类号： H01L31/042

CPC分类号： H01L31/055 ,  H01L31/02168 ,  Y02E10/52

摘要： Generally, solar cell panels are black, being inferior in design. An object of the invention is to provide a transparent plate which develops color without lowering power generation efficiency; and a solar cell panel which uses such transparent plate. A solar cell panel according to the invention has a construction such that the solar cell is covered by a transparent plate which is characterized by absorbing infrared light and emitting visible light. Since the transparent plate develops color by using infrared light which does not contribute to power generation, there is obtained a solar cell panel which is superior in the viewpoint of decoration without lowering the power generation efficiency of solar cells.

摘要翻译： 一般来说，太阳能电池板是黑色的，设计差。 本发明的目的是提供一种在不降低发电效率的情况下显色的透明板; 以及使用这种透明板的太阳能电池板。 根据本发明的太阳能电池板具有太阳能电池被透明板覆盖的结构，其特征在于吸收红外光并发出可见光。 由于通过使用对发电无贡献的红外线使透明板显色，所以获得了在不降低太阳能电池的发电效率的情况下在装饰的观点上优越的太阳能电池面板。

公开(公告)号：US20080224145A1

公开(公告)日：2008-09-18

申请号：US11907348

申请日：2007-10-11

申请人： Tadahiro Ohmi ,  Shigetoshi Sugawa ,  Katsuyuki Sekine ,  Yuji Saito

发明人： Tadahiro Ohmi ,  Shigetoshi Sugawa ,  Katsuyuki Sekine ,  Yuji Saito

IPC分类号： H01L29/04 ,  H01L29/788 ,  H01L29/78 ,  H01L27/12 ,  H01L21/316 ,  H01L21/762

CPC分类号： H01L21/28185 ,  G11C11/16 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/28211 ,  H01L21/28238 ,  H01L21/28291 ,  H01L27/11521 ,  H01L27/11585 ,  H01L27/1159 ,  H01L27/1203 ,  H01L29/045 ,  H01L29/4908 ,  H01L29/513 ,  H01L29/518 ,  H01L29/66825 ,  H01L29/7833 ,  H01L29/78603 ,  H01L29/78612 ,  H01L29/7883

摘要： A semiconductor device includes a Si crystal having a crystal surface in the vicinity of a (111) surface, and an insulation film formed on said crystal surface, at least a part of said insulation film comprising a Si oxide film containing Kr or a Si nitride film containing Ar or Kr.

公开(公告)号：US20080189674A1

公开(公告)日：2008-08-07

申请号：US11887966

申请日：2006-04-07

申请人： Yoshiyuki Taniguchi ,  Tatsuo Morimoto ,  Akira Nakada ,  Masae Nakada ,  Tadahiro Ohmi

发明人： Yoshiyuki Taniguchi ,  Tatsuo Morimoto ,  Akira Nakada ,  Masae Nakada ,  Tadahiro Ohmi

IPC分类号： G06F17/50

CPC分类号： G03F7/70291 ,  G03F1/68 ,  G03F1/78 ,  G03F7/70508

摘要： To provide a data generating method, device, and program that can generate drawing data for drawing the entire general design graphic data with an accuracy of about 1 to 4 nm in a drawing method or a drawing system adapted to draw gradation-controllable spotlights in a two-dimensional array.The data generating method is a method for generating, in an exposure system having a function of irradiating multigradation-controllable spotlights in a two-dimensional array onto a photosensitive film on a substrate, gradation values of the spotlights based on design graphic data. Using reference data classified by features of a graphic and describing in advance combinations of gradation values mapped to coordinate information of a graphic, the method discriminates the feature in the design graphic data near positions of the spotlights and selects the combination of the gradation values in the reference data corresponding to coordinate information of the positions of the spotlights, thereby determining the gradation values.

摘要翻译： 为了提供一种数据生成方法，装置和程序，其可以在绘制方法或绘制系统中生成绘制数据，以绘制整个一般设计图形数据，精度约为1至4nm，适于在 二维数组。 数据生成方法是在具有将二维阵列中的多光可控聚光灯照射到基板上的感光膜上的功能的曝光系统中产生的方法，其基于设计图形数据来生成聚光灯的灰度值。 使用根据图形的特征​​分类的参考数据，并预先描绘映射到图形的坐标信息的灰度值的组合，该方法鉴别聚光灯的位置附近的设计图形数据中的特征，并且选择 对应于聚光灯的位置的坐标信息的参考数据，从而确定灰度值。

公开(公告)号：US20080135954A1

公开(公告)日：2008-06-12

申请号：US11812807

申请日：2007-06-21

申请人： Tadahiro Ohmi ,  Akinobu Teramoto ,  Koutaro Tanaka

发明人： Tadahiro Ohmi ,  Akinobu Teramoto ,  Koutaro Tanaka

IPC分类号： H01L29/78 ,  H01L21/3205

CPC分类号： H01L29/7802 ,  H01J37/32192 ,  H01L21/049 ,  H01L29/1608 ,  H01L29/518 ,  H01L29/6606 ,  H01L29/66068

摘要： A film with small hysteresis and high voltage resistance is obtained by reducing the carbon content in a gate insulating film on a SiC substrate. Specifically, the carbon content in the gate insulating film is set to 1×1020 atoms/cm3 or less. For this, using a plasma processing apparatus, a silicon oxide film is formed on the SiC substrate and then the formed silicon oxide film is reformed by exposure to radicals containing nitrogen atoms. Thus, the gate insulating film excellent in electrical properties is obtained.

摘要翻译： 通过降低SiC衬底上的栅极绝缘膜中的碳含量，获得具有小滞后和高耐电压性的膜。 具体地，将栅极绝缘膜中的碳含量设定为1×10 20原子/ cm 3以下。 为此，使用等离子体处理装置，在SiC衬底上形成氧化硅膜，然后通过暴露于含有氮原子的基团将形成的氧化硅膜重整。 因此，获得了电性能优异的栅极绝缘膜。