公开(公告)号：US07115184B2

公开(公告)日：2006-10-03

申请号：US10276673

申请日：2002-03-28

申请人： Tadahiro Ohmi ,  Masaki Hirayama ,  Shigetoshi Sugawa ,  Tetsuya Goto

发明人： Tadahiro Ohmi ,  Masaki Hirayama ,  Shigetoshi Sugawa ,  Tetsuya Goto

IPC分类号： H01L21/00 ,  C23C16/00

CPC分类号： H01J37/32238 ,  H01J37/32192 ,  H01J37/32357 ,  H01J37/3244

摘要： A plasma processing apparatus includes a processing vessel, a means for holding a substrate to be processed, an evacuation system coupled to the processing vessel, a means for supplying plasma gas to an interior of the processing vessel, a microwave antenna provided on the processing vessel, and a process gas supply part comprised of two components. The first component includes a plurality of first apertures for passing through plasma formed in interior of the processing vessel, a process gas passage, and a plurality of second apertures in communication with the process gas passage. The second component includes a plurality of third apertures axially aligned with the first apertures in the first component and diffusion surfaces upon recessed areas of the second component, located opposite to the second apertures in the first component.

摘要翻译： 等离子体处理装置包括处理容器，用于保持要处理的基板的装置，耦合到处理容器的抽空系统，用于向处理容器的内部供应等离子体气体的装置，设置在处理容器上的微波天线 ，以及由两个部件组成的工艺气体供给部。 第一部件包括用于穿过形成在处理容器内部的等离子体的多个第一孔，处理气体通道和与处理气体通道连通的多个第二孔。 第二部件包括与第一部件中的第一孔轴向对齐的多个第三孔和位于第二部件的与第一部件中的第二孔相对的凹陷区域上的扩散表面。

公开(公告)号：US06893970B2

公开(公告)日：2005-05-17

申请号：US10015446

申请日：2001-12-12

申请人： Norio Kanetsuki ,  Tatsushi Yamamoto ,  Masaki Hirayama ,  Tadahiro Ohmi

发明人： Norio Kanetsuki ,  Tatsushi Yamamoto ,  Masaki Hirayama ,  Tadahiro Ohmi

IPC分类号： C23F4/00 ,  H01L21/28 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/3205 ,  H01L21/3213 ,  H01L21/768

CPC分类号： C23F4/00 ,  H01L21/32136

摘要： According to a plasma processing method, a process gas supplied into a process chamber is used to generate plasma from the process gas and process a substrate placed in the process chamber by means of the plasma. The substrate includes stacked films of at least two types to be etched by the plasma, and, according to any of the films that is to be etched, a change is made in the process gas in the plasma generation period. Accordingly, the time required for any process except for the main plasma process can be shortened so that the total time for the entire plasma process can be shortened to improve the processing speed.

摘要翻译： 根据等离子体处理方法，使用供应到处理室中的处理气体从处理气体产生等离子体，并通过等离子体处理放置在处理室中的衬底。 衬底包括由等离子体蚀刻的至少两种类型的堆叠膜，并且根据要蚀刻的任何膜，在等离子体产生周期中的处理气体中发生变化。 因此，除了主等离子体处理之外的任何处理所需的时间可以缩短，从而可以缩短整个等离子体处理的总时间，从而提高处理速度。

公开(公告)号：US20050092437A1

公开(公告)日：2005-05-05

申请号：US10493946

申请日：2003-07-03

申请人： Tadahiro Ohmi ,  Masaki Hirayama ,  Tetsuya Goto

发明人： Tadahiro Ohmi ,  Masaki Hirayama ,  Tetsuya Goto

IPC分类号： H05H1/46 ,  C23C16/44 ,  C23C16/455 ,  C23C16/511 ,  H01J37/32 ,  H01L21/31 ,  C23F1/00

CPC分类号： C23C16/45568 ,  C23C16/511 ,  H01J37/32192 ,  H01J37/32238 ,  H01J37/3244

摘要： A plasma processing apparatus comprises a processing vessel defined by an outer wall and provided with a stage that holds a substrate to be processed thereon, an evacuation system coupled to the processing vessel, a microwave window provided on the processing vessel as a part of the outer wall so as to face the substrate to be processed on the stage, a plasma gas supplying part supplying a plasma gas to the processing vessel, and a microwave antenna provided on the processing vessel in correspondence to the microwave. The plasma gas supplying part includes a porous medium and the plasma gas supplying part supplies the plasma gas through the porous medium.

摘要翻译： 等离子体处理装置包括由外壁限定的处理容器，该处理容器具有保持要处理的基板的台，连接到处理容器的抽空系统，设置在处理容器上的作为外部的一部分的微波窗口 壁，以便在台架上面对要处理的基板，向处理容器供应等离子体气体的等离子体气体供给部分和与微波对应地设置在处理容器上的微波天线。 等离子体气体供给部包括多孔介质，等离子体气体供给部通过多孔介质供给等离子体气体。

公开(公告)号：US06829279B1

公开(公告)日：2004-12-07

申请号：US09494945

申请日：2000-02-01

申请人： Tadahiro Ohmi ,  Nobumasa Suzuki ,  Hiroshi Ohsawa ,  Nobuyoshi Tanaka ,  Toshikuni Shinohara ,  Masaki Hirayama

发明人： Tadahiro Ohmi ,  Nobumasa Suzuki ,  Hiroshi Ohsawa ,  Nobuyoshi Tanaka ,  Toshikuni Shinohara ,  Masaki Hirayama

IPC分类号： H01S500

CPC分类号： G03F7/70025 ,  H01S3/0315 ,  H01S3/0385 ,  H01S3/225

摘要： In a laser oscillating apparatus for exciting a laser gas in a laser tube by introducing an electromagnetic wave from a waveguide into the laser tube through a plurality of slots formed in a waveguide wall, and generating a laser beam by resonating light emitted from the laser gas, the slots are formed in a line such that their longitudinal direction is consistent with the longitudinal direction of the waveguide, and a metal wall is so formed as to surround these slots. This metal wall forms a gap as a microwave passage from the slots to a window in the laser tube wall, thereby spacing the laser tube wall apart from the slots by a predetermined distance.

摘要翻译： 在激光振荡装置中，通过将形成在波导壁上的多个槽引入来自波导的电磁波向激光管激励激光器中的激光气体，通过使从激光气体发出的光共振而产生激光束 槽形成为一条直线，使得它们的纵向与波导的纵向方向一致，并且金属壁形成为围绕这些槽。 该金属壁形成从激光管壁中的狭缝到窗口的微波通道的间隙，从而将激光管壁与狭缝分开预定距离。

公开(公告)号：US06818852B2

公开(公告)日：2004-11-16

申请号：US10344761

申请日：2003-02-14

申请人： Tadahiro Ohmi ,  Masaki Hirayama ,  Tetsuya Goto

发明人： Tadahiro Ohmi ,  Masaki Hirayama ,  Tetsuya Goto

IPC分类号： B23K900

CPC分类号： H01J37/3222 ,  H01J37/32192

摘要： A placement stage (24) on which a semiconductor wafer (W) is place is provided within a processing container (22). A microwave is generated by a microwave generator (76), and the microwave is introduced into a process container (22) through a flat antenna member (66). The flat antenna member (66) has a plurality of slots (84) arranged along a plurality of circumferences, and the plurality of circumferences are non-concentric to each other. A distribution of plasma density in the flat antenna member (66) in a radial direction is uniform.

摘要翻译： 在处理容器（22）内设置放置有半导体晶片（W）的放置台（24）。 由微波发生器（76）产生微波，微波通过平板天线构件（66）引入处理容器（22）。 扁平天线构件（66）具有沿着多个圆周布置的多个狭槽（84），并且多个周边彼此不同心。 扁平天线构件（66）中的等离子体密度在径向上的分布是均匀的。

公开(公告)号：US06804285B2

公开(公告)日：2004-10-12

申请号：US09425015

申请日：1999-10-25

申请人： Tadahiro Ohmi ,  Hiroshi Osawa ,  Nobuyoshi Tanaka ,  Kazuhide Ino ,  Toshikuni Shinohara ,  Yasuyuki Shirai ,  Masaki Hirayama

发明人： Tadahiro Ohmi ,  Hiroshi Osawa ,  Nobuyoshi Tanaka ,  Kazuhide Ino ,  Toshikuni Shinohara ,  Yasuyuki Shirai ,  Masaki Hirayama

IPC分类号： H01S322

CPC分类号： H01S3/036

摘要： A gas supply path structure forms a fluid path for allowing a laser gas to flow into or out of a pair of fluid inlet and outlet 11a and a laser gas is controlled to a predetermined subsonic speed at a throat portion. Gas supplies for controlling the speed of the gas are connected each to the fluid inlet and to the fluid outlet of the gas supply path structure and, together with a cooling device, compose a circulation system for controlling the speed and pressure of the laser gas at the fluid inlet and/or at the fluid outlet.

摘要翻译： 气体供给路径结构形成用于允许激光气体流入或流出一对流体入口和出口11a的流体路径，并且在喉部处将激光气体控制到预定的亚音速。 用于控制气体速度的气体供应装置连接到流体入口和气体供给路径结构的流体出口，并且与冷却装置一起构成用于控制激光气体的速度和压力的循环系统 流体入口和/或在流体出口处。

公开(公告)号：US06801554B1

公开(公告)日：2004-10-05

申请号：US09531958

申请日：2000-03-21

申请人： Tadahiro Ohmi ,  Nobumasa Suzuki ,  Hiroshi Ohsawa ,  Nobuyoshi Tanaka ,  Toshikuni Shinohara ,  Masaki Hirayama

发明人： Tadahiro Ohmi ,  Nobumasa Suzuki ,  Hiroshi Ohsawa ,  Nobuyoshi Tanaka ,  Toshikuni Shinohara ,  Masaki Hirayama

IPC分类号： H01S300

CPC分类号： H01S3/225 ,  H01S3/0975

摘要： An excimer laser gas in a laser tube 2 is excited by a microwave introduced from awaveguide 1, and electric field concentration occurs in a slit-shaped gap 3 provided in a plate member 11c, causing plasma discharge. Then the phase of plasma light is regulated and the light is resonated, to cause excimer laser light. This construction realizes plasma excitation entirely uniform along a lengthwise direction of laser light emission, and enables uniform laser light emission with minimum energy loss.

摘要翻译： 激光管2中的准分子激光气体被从波导管1引入的微波激发，并且在设置在板构件11c中的狭缝状间隙3中发生电场浓度，引起等离子体放电。 然后等离子体光的相位被调节并且光被共振，以引起准分子激光。 这种结构实现了沿着激光发射的长度方向的等离子体激发完全均匀，并且以最小的能量损失实现均匀的激光发射。

公开(公告)号：US06753496B2

公开(公告)日：2004-06-22

申请号：US10010383

申请日：2001-12-07

申请人： Takamitsu Tadera ,  Tatsushi Yamamoto ,  Masaki Hirayama ,  Tadahiro Ohmi

发明人： Takamitsu Tadera ,  Tatsushi Yamamoto ,  Masaki Hirayama ,  Tadahiro Ohmi

IPC分类号： B23K1000

CPC分类号： B23K10/003 ,  B23K2101/40

摘要： On one side of a microwave entrance window that is exposed to the atmosphere, a slot plate having slots and a resonant unit are provided. The slot plate and the resonant unit are integrally placed to be slidable by linear guides with respect to a process chamber. In this way, a plasma processing apparatus can be provided that performs a highly uniform plasma process and is excellent in terms of plasma generation property.

摘要翻译： 在暴露于大气的微波入口窗的一侧，设有具有狭缝的槽板和谐振单元。 槽板和谐振单元整体地放置成可以通过线性导轨相对于处理室滑动。 以这种方式，可以提供执行高度均匀的等离子体处理的等离子体处理装置，并且在等离子体产生性方面是优异的。

公开(公告)号：US06744802B1

公开(公告)日：2004-06-01

申请号：US09512074

申请日：2000-02-24

申请人： Tadahiro Ohmi ,  Nobumasa Suzuki ,  Hiroshi Ohsawa ,  Nobuyoshi Tanaka ,  Toshikuni Shinohara ,  Masaki Hirayama

发明人： Tadahiro Ohmi ,  Nobumasa Suzuki ,  Hiroshi Ohsawa ,  Nobuyoshi Tanaka ,  Toshikuni Shinohara ,  Masaki Hirayama

IPC分类号： H01S3097

CPC分类号： G03F7/70025 ,  H01S3/0315 ,  H01S3/0975 ,  H01S3/225

摘要： In a slot array structure, electromagnetic wave emission which is uniform as a whole over the length of a laser tube is realized to allow uniform laser emission with minimum energy loss. Slots (10) are formed at a predetermined pitch in a long end face (H plane) of each waveguide (1) along a central line (m) in the longitudinal direction of the H plane to be alternately located on the left and right sides of the central line (m) and spaced apart from the central line (m) by a distance (d).

摘要翻译： 在时隙阵列结构中，实现了在激光管的长度上整体上均匀的电磁波发射，以允许具有最小能量损失的均匀的激光发射。 在每个波导（1）的长边（H平面）上沿着H平面的纵向方向上的中心线（m）以预定间距形成狭槽（10），以交替地位于左侧和右侧 的中心线（m）并与中心线（m）间隔开距离（d）。

公开(公告)号：US06726802B2

公开(公告)日：2004-04-27

申请号：US10211498

申请日：2002-08-02

申请人： Takamitsu Tadera ,  Tatsushi Yamamoto ,  Masaki Hirayama ,  Tadahiro Ohmi

发明人： Takamitsu Tadera ,  Tatsushi Yamamoto ,  Masaki Hirayama ,  Tadahiro Ohmi

IPC分类号： H05H100

CPC分类号： H01J37/32211 ,  H01J37/32192 ,  H01J37/32266

摘要： A plasma processing apparatus includes a slot plate having a slot-formed region for passing microwave from a waveguide to a microwave entrance window, and a slot plate drive unit driving the slot plate to change the position of the slot plate with respect to the microwave entrance window. The slot plate is thus moved with respect to the microwave entrance window to change at least one of the position, number and area of slot openings where the microwave is passed. The plasma processing apparatus accordingly ensures uniform plasma processing even if the process condition significantly changes when films on a large-area substrate or wafer to be processed are made of different materials or a stacked-layer film composed of layers of different materials is to be processed.

摘要翻译： 等离子体处理装置包括：槽板，其具有用于将微波从波导传递到微波入口窗口的槽形区域;以及槽板驱动单元，其驱动槽板以改变槽板相对于微波入口的位置 窗口。 狭缝板因此相对于微波入口窗移动，以改变微波通过的槽口的位置，数量和面积中的至少一个。 因此，等离子体处理装置即使在待处理的大面积基板或晶片上的膜由不同的材料制成或由不同材料的层构成的叠层膜将被处理时，即使处理条件显着变化，也能确保均匀的等离子体处理 。