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12 条记录 (耗时 0.021 秒)

    Plasma processing apparatus
    1.
    发明授权
    Plasma processing apparatus 失效
    等离子体处理装置

    公开(公告)号：US06998565B2

    公开(公告)日：2006-02-14

    申请号：US10707989

    申请日：2004-01-30

    申请人： Toshikuni Shinohara

    发明人： Toshikuni Shinohara

    IPC分类号： B23K9/00

    CPC分类号： H01J37/32192

    摘要： A plasma processing apparatus includes a first dielectric that is connected to a microwave generating unit, the first dielectric having a section that extends along a surface of a rectangular sample, and that makes an electric field strength distribution of the microwaves generated from the microwave generating unit substantially uniform along the surface of the sample; a slot plate that is provided below the first dielectric and in which a plurality of first slots are formed, the slot plate retaining or further enhancing the uniformity of the electric field strength distribution of the microwaves in the first dielectric; a second dielectric that is provided below the slot plate and that retains or further enhances the uniformity of the electric field strength distribution of the microwaves supplied from the slot plate; and a processing unit that processes the sample using a plasma generated in the reaction vessel by the microwaves.

    摘要翻译： 等离子体处理装置包括连接到微波发生单元的第一电介质，所述第一电介质具有沿着矩形样品的表面延伸的部分，并且使从微波产生单元产生的微波的电场强度分布 沿着样品的表面基本均匀; 所述槽板设置在所述第一电介质的下方并且形成有多个第一槽，所述槽板保持或进一步增强所述第一电介质中的所述微波的电场强度分布的均匀性; 第二电介质，其设置在槽板的下方，并且保持或进一步增强从槽板供给的微波的电场强度分布的均匀性; 以及处理单元，其使用通过微波在反应容器中产生的等离子体处理样品。

    Laser oscillating apparatus
    3.
    发明授权
    Laser oscillating apparatus 有权
    激光振荡装置

    公开(公告)号：US06650678B1

    公开(公告)日：2003-11-18

    申请号：US09512075

    申请日：2000-02-24

    申请人： Tadahiro Ohmi ,  Nobumasa Suzuki ,  Hiroshi Ohsawa ,  Nobuyoshi Tanaka ,  Toshikuni Shinohara ,  Masaki Hirayama

    发明人： Tadahiro Ohmi ,  Nobumasa Suzuki ,  Hiroshi Ohsawa ,  Nobuyoshi Tanaka ,  Toshikuni Shinohara ,  Masaki Hirayama

    IPC分类号： A01S3097

    CPC分类号： H01S3/0315 ,  G03F7/70383 ,  H01S3/0385 ,  H01S3/0975 ,  H01S3/225

    摘要： A plasma is excited uniformly as a whole over the length of each slot. A laser oscillating apparatus is designed to excite a laser gas in a laser tube (2) by introducing electromagnetic waves into the laser tube through a plurality of slots (10) formed in a waveguide wall and generate a laser beam by resonating the light generated from the laser gas. A least one electrode (13) is placed near the slot (10). By giving a predetermined current density to the electrode (13), the intensity distribution of light generated from the laser gas above the slot (10) is controlled.

    摘要翻译： 等离子体在每个槽的长度上作为整体被均匀地激发。 激光振荡装置被设计成通过在波导壁中形成的多个槽（10）将电磁波引入到激光管中来激发激光管（2）中的激光气体，并通过使从 激光气体。 至少一个电极（13）放置在槽（10）附近。 通过向电极（13）施加预定的电流密度，控制从狭槽（10）上方的激光气体产生的光的强度分布。

    Treating method and apparatus utilizing chemical reaction
    4.
    发明授权
    Treating method and apparatus utilizing chemical reaction 失效
    利用化学反应的处理方法和装置

    公开(公告)号：US06258244B1

    公开(公告)日：2001-07-10

    申请号：US09076834

    申请日：1998-05-13

    申请人： Tadahiro Ohmi ,  Nobuyoshi Tanaka ,  Takeo Ushiki ,  Toshikuni Shinohara ,  Takahisa Nitta

    发明人： Tadahiro Ohmi ,  Nobuyoshi Tanaka ,  Takeo Ushiki ,  Toshikuni Shinohara ,  Takahisa Nitta

    IPC分类号： C25D900

    CPC分类号： H01L21/3063 ,  C25D11/005 ,  C25D11/32 ,  H01L21/76256

    摘要： In order to effectively remove gas molecules of a by-product in a chemical reaction in a solution so as to achieve high efficiency, high rate, and uniformity of the chemical reaction in the solution and in order to realize formation of a semiconductor substrate applicable to production of SOI structure and realize formation of a semiconductor substrate in which a light-emitting element or a gas sensor can be formed, on the basis of an inexpensive silicon substrate, the chemical reaction is performed while the concentration of a gas dissolved in a reaction solution in a reaction vessel is always controlled to be not more than the solubility thereof during the reaction.

    摘要翻译： 为了有效地除去溶液中的化学反应中副产物的气体分子，以达到溶液中化学反应的高效率，高速率和均匀性，并且为了实现适用于 制造SOI结构，并且在廉价的硅衬底的基础上实现可以形成发光元件或气体传感器的半导体衬底的形成，同时在溶解在反应中的气体的浓度进行化学反应 反应容器中的溶液总是控制在不大于其在反应期间的溶解度。

    SOI bonding structure
    5.
    发明授权
    SOI bonding structure 失效
    SOI结合结构

    公开(公告)号：US06255731B1

    公开(公告)日：2001-07-03

    申请号：US09123364

    申请日：1998-07-28

    申请人： Tadahiro Ohmi ,  Nobuyoshi Tanaka ,  Takeo Ushiki ,  Toshikuni Shinohara ,  Takahisa Nitta

    发明人： Tadahiro Ohmi ,  Nobuyoshi Tanaka ,  Takeo Ushiki ,  Toshikuni Shinohara ,  Takahisa Nitta

    IPC分类号： H01L2348

    CPC分类号： H01L21/76251 ,  H01L21/2007 ,  H01L23/4825 ,  H01L2924/0002 ,  H01L2924/09701 ,  H01L2924/00

    摘要： A semiconductor substrate adapted to giga-scale integration (GSI) comprises a support, at least the surface of which is made of semiconductor, an electroconductive material layer, an insulating layer and a semiconductor layer arranged sequentially in the above order. The electroconductive material layer has at least in part thereof an electroconductive reacted layer obtained by causing two metals, a metal and a semiconductor, a metal and a metal-semiconductor compound, a semiconductor and a metal-semiconductor compound, or two metal-semiconductor compounds to react each other. An electroconductive reaction terminating layer that is made of a material that does not react with the reacted layer is arranged between the reacted layer and the insulating layer or the support.

    摘要翻译： 适用于千兆级集成（GSI）的半导体衬底包括至少其表面由半导体制成的支撑体，导电材料层，绝缘层和按上述顺序排列的半导体层。 导电材料层至少部分地具有通过使两种金属，金属和半导体，金属和金属 - 半导体化合物，半导体和金属 - 半导体化合物或两种金属 - 半导体化合物形成的导电反应层 互相反应。 在反应层和绝缘层或载体之间设置由不与反应层反应的材料制成的导电反应终止层。

    Laser oscillating apparatus, exposure apparatus using the same and device fabrication method
    7.
    发明授权
    Laser oscillating apparatus, exposure apparatus using the same and device fabrication method 有权
    激光振荡装置，使用其的曝光装置和装置制造方法

    公开(公告)号：US06829279B1

    公开(公告)日：2004-12-07

    申请号：US09494945

    申请日：2000-02-01

    申请人： Tadahiro Ohmi ,  Nobumasa Suzuki ,  Hiroshi Ohsawa ,  Nobuyoshi Tanaka ,  Toshikuni Shinohara ,  Masaki Hirayama

    发明人： Tadahiro Ohmi ,  Nobumasa Suzuki ,  Hiroshi Ohsawa ,  Nobuyoshi Tanaka ,  Toshikuni Shinohara ,  Masaki Hirayama

    IPC分类号： H01S500

    CPC分类号： G03F7/70025 ,  H01S3/0315 ,  H01S3/0385 ,  H01S3/225

    摘要： In a laser oscillating apparatus for exciting a laser gas in a laser tube by introducing an electromagnetic wave from a waveguide into the laser tube through a plurality of slots formed in a waveguide wall, and generating a laser beam by resonating light emitted from the laser gas, the slots are formed in a line such that their longitudinal direction is consistent with the longitudinal direction of the waveguide, and a metal wall is so formed as to surround these slots. This metal wall forms a gap as a microwave passage from the slots to a window in the laser tube wall, thereby spacing the laser tube wall apart from the slots by a predetermined distance.

    摘要翻译： 在激光振荡装置中，通过将形成在波导壁上的多个槽引入来自波导的电磁波向激光管激励激光器中的激光气体，通过使从激光气体发出的光共振而产生激光束 槽形成为一条直线，使得它们的纵向与波导的纵向方向一致，并且金属壁形成为围绕这些槽。 该金属壁形成从激光管壁中的狭缝到窗口的微波通道的间隙，从而将激光管壁与狭缝分开预定距离。

    Gas supply path structure for a gas laser
    8.
    发明授权
    Gas supply path structure for a gas laser 有权
    气体激光器的供气路径结构

    公开(公告)号：US06804285B2

    公开(公告)日：2004-10-12

    申请号：US09425015

    申请日：1999-10-25

    申请人： Tadahiro Ohmi ,  Hiroshi Osawa ,  Nobuyoshi Tanaka ,  Kazuhide Ino ,  Toshikuni Shinohara ,  Yasuyuki Shirai ,  Masaki Hirayama

    发明人： Tadahiro Ohmi ,  Hiroshi Osawa ,  Nobuyoshi Tanaka ,  Kazuhide Ino ,  Toshikuni Shinohara ,  Yasuyuki Shirai ,  Masaki Hirayama

    IPC分类号： H01S322

    CPC分类号： H01S3/036

    摘要： A gas supply path structure forms a fluid path for allowing a laser gas to flow into or out of a pair of fluid inlet and outlet 11a and a laser gas is controlled to a predetermined subsonic speed at a throat portion. Gas supplies for controlling the speed of the gas are connected each to the fluid inlet and to the fluid outlet of the gas supply path structure and, together with a cooling device, compose a circulation system for controlling the speed and pressure of the laser gas at the fluid inlet and/or at the fluid outlet.

    摘要翻译： 气体供给路径结构形成用于允许激光气体流入或流出一对流体入口和出口11a的流体路径，并且在喉部处将激光气体控制到预定的亚音速。 用于控制气体速度的气体供应装置连接到流体入口和气体供给路径结构的流体出口，并且与冷却装置一起构成用于控制激光气体的速度和压力的循环系统 流体入口和/或在流体出口处。