公开(公告)号：US20210313292A1

公开(公告)日：2021-10-07

申请号：US16836934

申请日：2020-04-01

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Po-Han Wang ,  Hung-Jui Kuo ,  Shih-Peng Tai ,  Yu-Hsiang Hu ,  I-Chia Chen

IPC: H01L23/00

Abstract: A semiconductor package including a plurality of semiconductor devices, an insulating layer, and a redistribution layer is provided. The insulating layer is disposed over the semiconductor device. The redistribution layer is disposed over the insulating layer and electrically connected to the semiconductor device. The redistribution layer includes a conductive line portion. The semiconductor package has a stitching zone, and the insulating layer has a ridge structure on a surface away from the semiconductor device and positioned within the stitching zone.

公开(公告)号：US11101176B2

公开(公告)日：2021-08-24

申请号：US16415437

申请日：2019-05-17

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Po-Han Wang ,  Yu-Hsiang Hu ,  Hung-Jui Kuo

IPC: H01L21/768 ,  H01L23/00 ,  H01L23/48 ,  H01L23/522 ,  H01L23/528 ,  H01L23/532 ,  H01L23/31 ,  H01L21/56

Abstract: A method of fabricating a redistribution circuit structure including the following steps is provided. A conductive via is formed. A photosensitive dielectric layer is formed to cover the conductive via. The photosensitive dielectric layer is partially removed to reveal the conductive via at least through an exposure and development process. A redistribution wiring is formed on the photosensitive dielectric layer and the revealed conductive via.

公开(公告)号：US11037877B2

公开(公告)日：2021-06-15

申请号：US16354135

申请日：2019-03-14

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Zi-Jheng Liu ,  Hung-Jui Kuo ,  Ming-Tan Lee

IPC: H01L23/495 ,  H01L23/538 ,  H01L23/31 ,  H01L23/00 ,  H01L25/065 ,  H01L21/48 ,  H01L21/56 ,  H01L25/00

Abstract: A package structure includes a first die, a second die, a bridge, an encapsulant and a redistribution layer (RDL) structure. The bridge is arranged side by side with the first die and the second die. The encapsulant laterally encapsulates the first die, the second die and the bridge. The RDL structure is disposed on the first die, the second die, the bridge and the encapsulant. The first die and the second die are electrically connected to each other through the bridge and the RDL structure.

公开(公告)号：US11031351B2

公开(公告)日：2021-06-08

申请号：US16272935

申请日：2019-02-11

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Zi-Jheng Liu ,  Jo-Lin Lan ,  Yu-Hsiang Hu ,  Hung-Jui Kuo

IPC: H01L23/31 ,  H01L23/538 ,  H01L23/00 ,  H01L23/58 ,  H01L23/544 ,  H01L21/48 ,  H01L21/78 ,  H01L21/683 ,  H01L21/56

Abstract: A method includes forming an insulating film over a semiconductor structure, forming a sealing ring over a sidewall of the insulating film, and forming a protective layer over an exposed sidewall of the sealing ring. The semiconductor structure includes a semiconductor chip and a molding compound disposed around the semiconductor chip. The exposed sidewall of the sealing ring faces away from the sidewall of the insulating film.

公开(公告)号：US11024581B2

公开(公告)日：2021-06-01

申请号：US16283836

申请日：2019-02-25

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yi-Wen Wu ,  Hung-Jui Kuo ,  Ming-Che Ho

IPC: H01L23/532 ,  H01L23/31 ,  H01L23/522 ,  H01L23/00 ,  H01L21/768

Abstract: Semiconductor packages and methods of forming the same are disclosed. One of the semiconductor packages includes a first dielectric layer, a first conductive pattern and a barrier layer. The first conductive pattern is disposed in a second dielectric layer over the first dielectric layer. The barrier layer is disposed at an interface between the first conductive pattern and the second dielectric layer and an interface between the first dielectric layer and the second dielectric layer.

公开(公告)号：US20210134611A1

公开(公告)日：2021-05-06

申请号：US17120458

申请日：2020-12-14

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Zi-Jheng Liu ,  Yu-Hsiang Hu ,  Jo-Lin Lan ,  Sih-Hao Liao ,  Chen-Cheng Kuo ,  Hung-Jui Kuo ,  Chung-Shi Liu ,  Chen-Hua Yu ,  Meng-Wei Chou

IPC: H01L21/56 ,  H01L23/00 ,  H01L25/10 ,  H01L25/00

Abstract: A semiconductor device and method that comprise a first dielectric layer over a encapsulant that encapsulates a via and a semiconductor die is provided. A redistribution layer is over the first dielectric layer, and a second dielectric layer is over the redistribution layer, and the second dielectric layer comprises a low-temperature polyimide material.

公开(公告)号：US20210125886A1

公开(公告)日：2021-04-29

申请号：US16667854

申请日：2019-10-29

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Po-Han Wang ,  Hung-Jui Kuo ,  Yu-Hsiang Hu ,  Sih-Hao Liao

IPC: H01L23/31 ,  H01L23/498 ,  H01L25/16

Abstract: A semiconductor package including a semiconductor die, an encapsulant, an electrical connector, a conductive pad and an inter-dielectric layer is provided. The encapsulant encapsulates the semiconductor die. The electrical connector is disposed over the semiconductor die. The conductive pad contacts the electrical connector and is disposed between the semiconductor die and the electrical connector. The inter-dielectric layer is disposed over the semiconductor die, wherein the inter-dielectric layer comprises an opening, and a portion of the opening is occupied by the conductive pad and the electrical connector.

公开(公告)号：US20210125885A1

公开(公告)日：2021-04-29

申请号：US16666431

申请日：2019-10-29

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wei-Chih Chen ,  Chien-Hsun Lee ,  Chung-Shi Liu ,  Hao-Cheng Hou ,  Hung-Jui Kuo ,  Jung-Wei Cheng ,  Tsung-Ding Wang ,  Yu-Hsiang Hu ,  Sih-Hao Liao

IPC: H01L23/31 ,  H01L23/538 ,  H01L25/065 ,  H01L23/16 ,  H01L21/56 ,  H01L25/00

Abstract: A package structure and a method of forming the same are provided. The package structure includes a first die, a second die, a first encapsulant, and a buffer layer. The first die and the second die are disposed side by side. The first encapsulant encapsulates the first die and the second die. The second die includes a die stack encapsulated by a second encapsulant encapsulating a die stack. The buffer layer is disposed between the first encapsulant and the second encapsulant and covers at least a sidewall of the second die and disposed between the first encapsulant and the second encapsulant. The buffer layer has a Young's modulus less than a Young's modulus of the first encapsulant and a Young's modulus of the second encapsulant.

公开(公告)号：US10985116B2

公开(公告)日：2021-04-20

申请号：US16352838

申请日：2019-03-14

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ching-Wen Chen ,  Hung-Jui Kuo ,  Ming-Che Ho

IPC: H01L23/00 ,  H01L23/31 ,  H01L23/538 ,  H01L21/48 ,  H01L21/56

Abstract: A semiconductor package and a method of forming the same are disclosed. A method of forming a semiconductor package includes the following operations. A polymer layer is formed over a die. A metal feature is formed in the polymer layer. An argon-containing plasma treatment is performed to the polymer layer and the metal feature.

公开(公告)号：US20210098397A1

公开(公告)日：2021-04-01

申请号：US17120825

申请日：2020-12-14

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chen-Hua Yu ,  Ming-Che Ho ,  Hung-Jui Kuo ,  Yi-Wen Wu ,  Tzung-Hui Lee

IPC: H01L23/00 ,  H01L21/66

Abstract: A semiconductor device and method of manufacturing is provided, whereby a support structure is utilized to provide additional support for a conductive element in order to eliminate or reduce the formation of a defective surface such that the conductive element may be formed to have a thinner structure without suffering deleterious structures.