公开(公告)号：US20190155139A1

公开(公告)日：2019-05-23

申请号：US15884801

申请日：2018-01-31

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hsiao-Lun CHANG ,  Chueh-Chi KUO ,  Tsung-Yen LEE ,  Tzung-Chi FU ,  Li-Jui CHEN ,  Po-Chung CHENG ,  Che-Chang HSU

IPC: G03F1/24 ,  G03F1/66

Abstract: A reticle, a reticle container and a method for discharging static charges accumulated on a reticle are provided. The reticle includes a mask substrate, a reflective multilayer (ML) structure, a capping layer, an absorption structure and a conductive material structure. The mask substrate has a front-side surface and a back-side surface. The reflective ML structure is positioned over the front-side surface of mask substrate. The capping layer is positioned over the reflective ML structure. The absorption structure is positioned over the capping layer. The conductive material structure is positioned over a sidewall surface of the mask substrate and a sidewall surface of the absorption structure.

公开(公告)号：US20190150262A1

公开(公告)日：2019-05-16

申请号：US15906574

申请日：2018-02-27

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Wei-Chih LAI ,  Han-Lung CHANG ,  Bo-Tsun LIU ,  Li-Jui CHEN ,  Po-Chung CHENG

IPC: H05G2/00

CPC classification number: H05G2/006 ,  H05G2/008

Abstract: A method of controlling an excitation laser includes detecting, at a droplet generator, a first signal of radiation scattered by a given target droplet irradiated by a first radiation source at a first position. The method of controlling the excitation laser further includes detecting, at the droplet generator, a second signal of radiation scattered by the given target droplet irradiated by a second radiation source at a second position a fixed distance away from the first position, and determining a speed of the given target droplet based on a time lag between the detecting of the first signal and the detecting of the second signal. The method further includes controlling a trigger time for triggering an excitation pulse for heating the given target droplet based on the determined speed of the given target droplet.

公开(公告)号：US20190131290A1

公开(公告)日：2019-05-02

申请号：US15797842

申请日：2017-10-30

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hung-Wen CHO ,  Fu-Jye LIANG ,  Chun-Kuang CHEN ,  Chih-Tsung SHIH ,  Li-Jui CHEN ,  Po-Chung CHENG ,  Chin-Hsiang LIN

IPC: H01L27/02 ,  G06F17/50

CPC classification number: H01L27/0207 ,  G06F17/5009 ,  G06F17/5045 ,  G06F17/5068 ,  G06F2217/12 ,  H01L27/0203

Abstract: A layout modification method for fabricating an integrated circuit is provided. The layout modification method includes calculating uniformity of critical dimension of a patterned layer with a layout for an exposure manufacturing process to produce a semiconductor device. The patterned layer is divided into a first portion and a second portion which is adjacent to the first portion, and a width of the second portion equals to a penumbra size of the exposure manufacturing process. The layout modification method further includes retrieving an adjusting parameter for modifying the layout of the semiconductor device; determining a compensation amount based on the adjusting parameter and the uniformity of critical dimension; and compensating the critical dimension of the second portion of the patterned layer by utilizing the compensation amount to generate a modified layout.

公开(公告)号：US20190094718A1

公开(公告)日：2019-03-28

申请号：US16021461

申请日：2018-06-28

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chi YANG ,  Ssu-Yu CHEN ,  Shang-Chieh CHIEN ,  Chieh HSIEH ,  Tzung-Chi FU ,  Bo-Tsun LIU ,  Li-Jui CHEN ,  Po-Chung CHENG

IPC: G03F7/20

Abstract: A radiation source apparatus is provided. The radiation source apparatus includes a chamber, a target droplet generator, an exhaust module, a measuring device, and a controller. The target droplet generator is configured to provide a plurality of target droplets to the chamber. The exhaust module is configured to extract debris corresponding to the target droplets out of the chamber according to a first gas flow rate. The measuring device is configured to measure concentration of the debris in the chamber. The controller is configured to adjust the first gas flow rate according to the measured concentration of the debris.

公开(公告)号：US20190033225A1

公开(公告)日：2019-01-31

申请号：US15883971

申请日：2018-01-30

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chun-Lin Louis CHANG ,  Shang-Chieh CHIEN ,  Shang-Ying WU ,  Li-Kai CHENG ,  Tzung-Chi FU ,  Bo-Tsun LIU ,  Li-Jui CHEN ,  Po-Chung CHENG ,  Anthony YEN ,  Chia-Chen CHEN

IPC: G01N21/88 ,  G03F7/20 ,  H01L21/027 ,  G01N21/94 ,  G01N21/956

CPC classification number: G01N21/8806 ,  G01N21/94 ,  G01N21/954 ,  G01N21/95623 ,  G03F7/2037 ,  G03F7/70033 ,  G03F7/70166 ,  G03F7/70175 ,  G03F7/70916 ,  H01L21/0275

Abstract: A single-shot metrology for direct inspection of an entirety of the interior of an EUV vessel is provided. An EUV vessel including an inspection tool integrated with the EUV vessel is provided. During an inspection process, the inspection tool is moved into a primary focus region of the EUV vessel. While the inspection tool is disposed at the primary focus region and while providing a substantially uniform and constant light level to an interior of the EUV vessel by way of an illuminator, a panoramic image of an interior of the EUV vessel is captured by way of a single-shot of the inspection tool. Thereafter, a level of tin contamination on a plurality of components of the EUV vessel is quantified based on the panoramic image of the interior of the EUV vessel. The quantified level of contamination is compared to a KPI, and an OCAP may be implemented.

公开(公告)号：US20180376575A1

公开(公告)日：2018-12-27

申请号：US15801225

申请日：2017-11-01

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Shang-Chieh CHIEN ,  Po-Chung CHENG ,  Chia-Chen CHEN ,  Jen-Yang CHUNG ,  Li-Jui CHEN ,  Tzung-Chi FU ,  Shang-Ying WU

IPC: H05G2/00 ,  G03F7/20

Abstract: An extreme ultra violet (EUV) radiation source apparatus includes a collector, a target droplet generator for generating a tin (Sn) droplet, a rotatable debris collection device and a chamber enclosing at least the collector and the rotatable debris collection device. The rotatable debris collection device includes a first end support, a second end support and a plurality of vanes, ends of which are supported by the first end support and the second end support, respectively. A surface of at least one of the plurality of vanes is coated by a catalytic layer, which reduces a SnH4 to Sn.