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    Terminal device
    71.
    发明申请
    Terminal device 有权
    终端设备

    公开(公告)号：US20070073812A1

    公开(公告)日：2007-03-29

    申请号：US10562912

    申请日：2004-06-30

    申请人： Kenji Yamaguchi

    发明人： Kenji Yamaguchi

    IPC分类号： G06F15/16

    CPC分类号： H04M1/72547

    摘要： The present invention is a terminal device for transmitting and receiving mails, comprising: a mail receiving unit; a judging unit operable to judge whether a command declaration is included in a received mail; a command interpreting unit operable to extract and interpret a specific command following the command-declaration if the judgment of the judging unit is affirmative; a creating unit operable to create, if the specific command is interpreted as target list creation, a list of corresponding targets in memory of the terminal device; and a mail transmitting unit operable to create and transmit a mail having the created list as a mail main body and addressed to a requester.

    摘要翻译： 本发明是一种用于发送和接收邮件的终端设备，包括：邮件接收单元; 判断单元，用于判断在接收到的邮件中是否包括命令声明; 命令解释单元，用于在判断单元的判断为肯定的情况下，提取和解释命令声明之后的特定命令; 创建单元，其可操作以在所述特定命令被解释为目标列表创建时创建所述终端设备的存储器中的相应目标的列表; 以及邮件发送单元，用于创建并发送具有创建的列表作为邮件主体并且寻址到请求者的邮件。

    Body motion detector
    74.
    发明授权
    Body motion detector 有权
    身体运动检测器

    公开(公告)号：US07034694B2

    公开(公告)日：2006-04-25

    申请号：US10669878

    申请日：2003-09-25

    申请人： Kenji Yamaguchi ,  Norimitsu Baba

    发明人： Kenji Yamaguchi ,  Norimitsu Baba

    IPC分类号： G08B23/00

    CPC分类号： A63B69/0028 ,  A61B5/02438 ,  A61B5/112 ,  A61B5/6826 ,  A61B5/6838 ,  A61B5/7257 ,  A61B2562/0219 ,  A63B2071/0663 ,  A63B2220/40 ,  A63B2230/06

    摘要： The invention provides a body motion detector that allows a user to check whether he/she makes motion with appropriate motion intensity for every motion thereby to obtain an excellent exercise effect while exercising such as walking and running. While a user makes motion, a CPU determines whether the user makes appropriate motion by the amplitude, the period, and the detection frequency of an acceleration signal inputted from an acceleration sensor unit, and when it is determined that the user makes appropriate motion, operates an alarm generator thereby to notify the user that he/she makes motion with appropriate motion intensity.

    摘要翻译： 本发明提供了一种身体运动检测器，其允许用户检查他/她是否为每个运动以适当的运动强度进行运动，从而在行走和行走等运动时获得优异的运动效果。 当用户进行运动时，CPU根据从加速度传感器单元输入的加速度信号的振幅，周期和检测频率来确定用户是否进行适当的运动，并且当确定用户进行适当的运动时，操作 报警发生器，从而通知用户他/她以适当的运动强度进行运动。

    Apparatus, method and pattern for evaluating semiconductor device characteristics
    75.
    发明授权
    Apparatus, method and pattern for evaluating semiconductor device characteristics 失效
    用于评估半导体器件特性的装置，方法和图案

    公开(公告)号：US06779160B2

    公开(公告)日：2004-08-17

    申请号：US10345950

    申请日：2003-01-17

    申请人： Hiroyuki Amishiro ,  Kenji Yamaguchi

    发明人： Hiroyuki Amishiro ,  Kenji Yamaguchi

    IPC分类号： G06F1750

    CPC分类号： G01R31/2621 ,  G01R27/02 ,  G01R31/2648 ,  G01R31/2884 ,  H01L2924/0002 ,  H01L2924/00

    摘要： External resistance Rsd1 is obtained using a first evaluation pattern of MOSFETs having a gate contact length Lgc1 and a channel width W1 each (in steps 100 and 102). External resistance Rsd2 is then acquired by use of a second evaluation pattern of MOSFETs having a gate contact length Lgc2 and a channel width W2 each (in steps 100 and 104). Thereafter, sheet resistance Rsh and overlapping portion resistance Rdsw of the MOSFETs are computed (in step 106) in accordance with the following expressions: Rsh=(W2·Rsd2−W1·Rsd1)/(Lgc2−Lgc1) Rdsw=(W1·Lgc2·Rsd1−W2·Lgc1·Rsd2)/(Lgc2−Lgc1).

    摘要翻译： 使用具有栅极接触长度Lgc1和沟道宽度W1的MOSFET的第一评估模式（步骤100和102）获得外部电阻Rsd1。 然后通过使用具有栅极接触长度Lgc2和沟道宽度W2的MOSFET的第二评估模式（步骤100和104）来获取外部电阻Rsd2。 此后，根据以下表达式计算MOSFET的薄层电阻Rsh和重叠部分电阻Rdsw（在步骤106中）：

    Characteristic evaluation apparatus for insulated gate type transistors
    76.
    发明授权
    Characteristic evaluation apparatus for insulated gate type transistors 失效

    公开(公告)号：US06649430B2

    公开(公告)日：2003-11-18

    申请号：US10350059

    申请日：2003-01-24

    申请人： Kenji Yamaguchi

    发明人： Kenji Yamaguchi

    IPC分类号： H01L2166

    CPC分类号： H01L22/14 ,  G01R31/2621 ,  G01R31/2837

    摘要： The accuracy of effective channel width extraction in drain current method is improved. There are prepared a transistor with a wide channel width serving as a reference, and a transistor with a narrow channel width that becomes a candidate for extraction (step ST1.1). From the characteristic curve of a plane formed by mask channel width and source-drain conductance, there is extracted a virtual point at which the change of source-drain conductance is estimated to be approximately zero even if the gate overdrive is finely changed. Then, the value of function F is calculated which is defined by the difference between the change of the conductance at the coordinate of the virtual point and the product obtained by multiplying the conductance per unit width by the change of the mask channel width (step ST1.6). From a shift amount (&dgr;) which minimizes the standard deviation of the function F to be obtained (step ST1.7), the true threshold voltage of the transistor with the narrow channel width is determined (step ST1.10).

    Device for evaluating characteristic of insulated gate transistor
    77.
    发明授权
    Device for evaluating characteristic of insulated gate transistor 失效
    绝缘栅晶体管特性评估装置

    公开(公告)号：US06407573B1

    公开(公告)日：2002-06-18

    申请号：US09238887

    申请日：1999-01-28

    申请人： Kenji Yamaguchi ,  Hiroyuki Amishiro ,  Yuko Maruyama

    发明人： Kenji Yamaguchi ,  Hiroyuki Amishiro ,  Yuko Maruyama

    IPC分类号： G01R3126

    CPC分类号： G01R31/2621 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A transistor having a longer channel length and serving as a reference, and a transistor having a shorter channel length and to be subjected to effective channel length extraction are prepared (step ST1.1). A hypothetical point at which a change in a total drain-to-source resistance is estimated to be approximately zero when a gate overdrive is slightly changed is extracted in a mask channel length versus total drain-to-source resistance plane. The values of a function (F) are calculated which are defined by the difference between the rate of change in the total drain-to-source resistance and the product of a channel resistance per unit length and the rate of change in a mask channel length at the hypothetical points (step ST1.6). A true threshold voltage of the transistor having the shorter channel length is determined by a shift amount (&dgr;) which minimizes the standard deviation of the function (F) determined in the step ST1.7 (step ST1.10). A resistance-based method thus extracts an effective channel length and a series resistance with increased accuracy.

    摘要翻译： 制备具有较长沟道长度并用作基准的晶体管，以及具有较短沟道长度并经受有效沟道长度提取的晶体管（步骤ST1.1）。 当栅极过驱动略微改变时，估计总漏极 - 源极电阻的变化大致为零的假想点，掩模沟道长度对总漏极 - 源极电阻平面提取。 计算函数（F）的值，其由总漏极 - 源极电阻的变化率与每单位长度的沟道电阻的乘积与掩模沟道长度的变化率之间的差定义 在假想点（步骤ST1.6）。 具有较短信道长度的晶体管的真实阈值电压由步骤ST1.7中确定的函数（F）的标准偏差最小化的移位量（delta）确定（步骤ST1.10）。 因此，基于电阻的方法提高了精确度的有效通道长度和串联电阻。

    Silicon-and-nitrogen-containing luminescent substance, method for forming the same, and light emitting device using the same
    78.
    发明授权
    Silicon-and-nitrogen-containing luminescent substance, method for forming the same, and light emitting device using the same 有权
    含氮和氮的发光物质，其形成方法和使用其的发光器件

    公开(公告)号：US06399225B1

    公开(公告)日：2002-06-04

    申请号：US09519452

    申请日：2000-03-06

    申请人： Kenji Yamaguchi ,  Kazuki Mizushima ,  Kouichi Sassa

    发明人： Kenji Yamaguchi ,  Kazuki Mizushima ,  Kouichi Sassa

    IPC分类号： H05B3314

    CPC分类号： H01L33/26 ,  H01L33/005 ,  H01L33/0058 ,  H01L33/18 ,  H01L33/34 ,  Y10S428/917

    摘要： A luminescent substance contains silicon and nitrogen as major components and has an amorphous structure. The silicon content of the luminescent substance is greater than the stoichiometric silicon content of Si3N4, and the luminous intensity of the luminescent substance has a maximum at approximately 2.2 eV. The luminescent substance has a high luminous efficiency and a short luminous decay lifetime. A light-emitting device includes this luminescent substance and a substrate. The luminescent substance can be readily formed on the substrate by a chemical vapor deposition process.

    摘要翻译： 发光物质含有硅和氮作为主要组分并具有非晶结构。 发光物质的硅含量大于Si 3 N 4的化学计量硅含量，并且发光物质的发光强度在约2.2eV处具有最大值。 发光物质具有高的发光效率和短的发光衰减寿命。 发光装置包括该发光物质和基板。 发光物质可以通过化学气相沉积工艺容易地形成在衬底上。

    Characteristic evaluation apparatus for insulated gate type transistors
    79.
    发明授权
    Characteristic evaluation apparatus for insulated gate type transistors 失效
    绝缘栅型晶体管特性评估装置

    公开(公告)号：US06169415A

    公开(公告)日：2001-01-02

    申请号：US09249139

    申请日：1999-02-12

    申请人： Kenji Yamaguchi

    发明人： Kenji Yamaguchi

    IPC分类号： G01R3126

    CPC分类号： H01L22/14 ,  G01R31/2621 ,  G01R31/2837

    摘要： The accuracy of effective channel width extraction in drain current method is improved. There are prepared a transistor with a wide channel width serving as a reference, and a transistor with a narrow channel width that becomes a candidate for extraction (step ST1.1). From the characteristic curve of a plane formed by mask channel width and source-drain conductance, there is extracted a virtual point at which the change of source-drain conductance is estimated to be approximately zero even if the gate overdrive is finely changed. Then, the value of function F is calculated which is defined by the difference between the change of the conductance at the coordinate of the virtual point and the product obtained by multiplying the conductance per unit width by the change of the mask channel width (step ST1.6). From a shift amount (&dgr;) which minimizes the standard deviation of the function F to be obtained (step ST1.7), the true threshold voltage of the transistor with the narrow channel width is determined (step ST1.10).

    摘要翻译： 漏电流法有效沟道宽度提取的精度得到提高。 准备具有宽沟道宽度的晶体管作为基准，并且具有成为提取候选的窄沟道宽度的晶体管（步骤ST1.1）。 从由掩模沟道宽度和源极 - 漏极电导形成的平面的特性曲线，提取虚拟点，即使栅极过驱动被精细地改变，源极 - 漏极电导的变化被估计为近似为零。 然后，计算函数F的值，其由虚拟点的坐标上的电导的变化与乘以每​​单位宽度的电导乘以掩模通道宽度的改变而得到的乘积之间的差定义（步骤ST1 .6）。 根据要获得的函数F的标准偏差最小化的移位量（delta）（步骤ST1.7），确定具有窄通道宽度的晶体管的真实阈值电压（步骤ST1.10）。