公开(公告)号：US20090057669A1

公开(公告)日：2009-03-05

申请号：US12142527

申请日：2008-06-19

申请人： Tatsuya Ishii

发明人： Tatsuya Ishii

IPC分类号： H01L27/02

CPC分类号： G02F1/1368 ,  H01L29/42384 ,  H01L29/78633

摘要： An electro-optical device includes a switching element with a gate electrode provided opposite to the channel region. The gate electrode has a ring-shaped structure that surrounds a junction region between the channel region and a source/drain region.

摘要翻译： 电光装置包括具有与沟道区相对设置的栅电极的开关元件。 栅极电极具有围绕沟道区域和源极/漏极区域之间的结区域的环形结构。

公开(公告)号：US07312624B2

公开(公告)日：2007-12-25

申请号：US11295432

申请日：2005-12-07

申请人： Tatsuya Ishii

发明人： Tatsuya Ishii

IPC分类号： G00R31/00 ,  G09G3/36

CPC分类号： G09G3/3648 ,  G09G3/006

摘要： A substrate for an electro-optical device includes amplifiers each has a first node and a second node, the first node connected to a signal line and being input with a first potential signal, the second node being input with a second potential signal, each amplifier outputting signals such that the potential of the first node is further decreased when the first potential signal is low, and the potential of the first node is further increased when the first potential signal is high. At least two signal lines correspond to at least one of the first and second nodes. A selection unit that selects one signal line. A connection unit connect the selected signal line to at least one of the first and second nodes.

摘要翻译： 一种用于电光装置的衬底包括放大器，每个放大器具有第一节点和第二节点，第一节点连接到信号线并且被输入第一电位信号，第二节点用第二电位信号输入，每个放大器 输出信号，使得当第一电位信号为低时第一节点的电位进一步减小，并且当第一电位信号为高时，第一节点的电位进一步增加。 至少两条信号线对应于第一和第二节点中的至少一个。 选择一个信号线的选择单元。 连接单元将所选择的信号线连接到第一和第二节点中的至少一个。

公开(公告)号：US07283399B2

公开(公告)日：2007-10-16

申请号：US11498230

申请日：2006-08-03

申请人： Tatsuya Ishii ,  Hitoshi Miwa ,  Osamu Tsuchiya ,  Shooji Kubono

发明人： Tatsuya Ishii ,  Hitoshi Miwa ,  Osamu Tsuchiya ,  Shooji Kubono

IPC分类号： G11C16/04

CPC分类号： G11C16/3427 ,  G11C16/0491 ,  G11C16/10 ,  G11C16/12 ,  G11C16/16 ,  G11C16/3404 ,  G11C16/3431 ,  G11C16/3459 ,  G11C2216/18

摘要： A nonvolatile semiconductor memory recovers variation in the threshold of a memory cell due to disturbance related to a word line. The nonvolatile memory continuously performs many writing operations without carrying out single-sector erasing after each writing operation, performing the additional writing operations quicker than the usual writing operation, and lightening the burden imposed on software for use in additional writing. The data stored in a designated sector is read out before being saved in a register, and the selected sector is subjected to single-sector erasing when a predetermined command is given. Then write expected value data is formed from the saved data and data to be additionally written, completing the writing operation.

摘要翻译： 非易失性半导体存储器由于与字线相关的干扰而恢复存储器单元的阈值的变化。 非易失性存储器在每次写入操作之后连续执行许多写入操作，而不执行单扇区擦除，执行比通常的写入操作更快的附加写入操作，以及减轻用于附加写入的软件的负担。 存储在指定扇区中的数据在保存在寄存器中之前被读出，并且当给出预定命令时，所选扇区被进行单扇区擦除。 然后写入预期值数据由保存的数据和要另外编写的数据形成，完成写入操作。

公开(公告)号：US07175911B2

公开(公告)日：2007-02-13

申请号：US10663769

申请日：2003-09-17

申请人： Zhonghua Zhou ,  Fumio Tokuoka ,  Yugo Ito ,  Tatsuya Ishii ,  Shunzo Shimai ,  Hiroshi Yamaguchi ,  Hiroyuki Kondo

发明人： Zhonghua Zhou ,  Fumio Tokuoka ,  Yugo Ito ,  Tatsuya Ishii ,  Shunzo Shimai ,  Hiroshi Yamaguchi ,  Hiroyuki Kondo

IPC分类号： B32B5/16

CPC分类号： B82Y30/00 ,  B01D53/86 ,  B01D2255/802 ,  B01J21/06 ,  B01J21/063 ,  B01J27/02 ,  B01J27/20 ,  B01J27/24 ,  B01J35/004 ,  B01J37/08 ,  C01G23/047 ,  C01G23/08 ,  C01P2002/70 ,  C01P2002/82 ,  C01P2004/03 ,  C01P2004/64 ,  Y10T428/25 ,  Y10T428/256 ,  Y10T428/2991

摘要： The invention provides titanium dioxide fine particles, wherein nitrogen and at least one element selected from carbon, hydrogen, sulfur doped in titanium dioxide by heat-treating fine particles of a material of titanium dioxide at 500° C. or more and 600° C. or less in a reducing gas atmosphere containing nitrogen. The titanium fine particles exhibit a high photocatalytic activity than in the conventional art by irradiating a visible light such that they exhibit an isopropanol oxidation activity induced by visible light irradiation with a wavelength of 400 nm or more and 600 nm or less with excellent stability and durability of the photocatalytic activity.

摘要翻译： 本发明提供二氧化钛细颗粒，其中氮和至少一种选自碳，氢，硫在二氧化钛中掺杂的元素通过在500℃或更高和600℃下热处理二氧化钛材料的细颗粒。 以下。 钛微细颗粒通过照射可见光而表现出比常规技术更高的光催化活性，使得它们表现出以400nm以上且600nm以下的波长的可见光照射引起的异丙醇氧化活性，具有优异的稳定性和耐久性 的光催化活性。

公开(公告)号：US20060114726A1

公开(公告)日：2006-06-01

申请号：US11330233

申请日：2006-01-12

申请人： Kenji Kozakai ,  Takeshi Nakamura ,  Tatsuya Ishii ,  Motoyasu Tsunoda ,  Shinya Iguchi ,  Junichi Maruyama

发明人： Kenji Kozakai ,  Takeshi Nakamura ,  Tatsuya Ishii ,  Motoyasu Tsunoda ,  Shinya Iguchi ,  Junichi Maruyama

IPC分类号： G11C16/04 ,  G11C7/10

CPC分类号： G06F12/0246 ,  G06F11/1068 ,  G06F12/06 ,  G06F2212/1036 ,  G11C16/04 ,  G11C16/10 ,  G11C16/349 ,  G11C29/44 ,  G11C29/76 ,  G11C2029/0409

摘要： For a nonvolatile memory permitting electrical writing and erasing of information to be stored, such as a flash memory, the load on the system developer is to be reduced, and it is to be made possible to avoid, even if such important data for the system as management and address translation information are damaged, an abnormal state in which the system becomes unable to operate. The nonvolatile memory is provided with a replacing function to replace a group of memory cells including defective memory cells which are incapable of normal writing or erasion with a group of memory cells including no defective memory cell, a numbers of rewrites averaging function to grasp the number of data rewrites in each group of memory cells and to so perform replacement of memory cell groups that there may arise no substantial difference in the number of rewrites among a plurality of memory cell groups, and an error correcting function to detect and correct any error in data stored in the memory array, wherein first address translation information deriving from the replacing function and second address translation information deriving from the numbers of rewrites averaging function are stored in respectively prescribed areas in the memory array, and the first address translation information and second address translation information concerning the same memory cell group are stored in a plurality of sets in a time series.

公开(公告)号：US06985522B2

公开(公告)日：2006-01-10

申请号：US09741194

申请日：2000-12-21

申请人： Tatsuya Ishii

发明人： Tatsuya Ishii

IPC分类号： H04H7/30 ,  H03K5/159

CPC分类号： H03H17/06

摘要： A variable-gain digital filter includes a selector and multiplier arranged inside the digital filter for regulating gain whereby the number of bits of filter input is X, the number of flip-flops inside the filter is X×n bits, and a (Y×n bit) reduction in the number of flip-flops is enabled. The gain regulation circuit incorporated within the digital filter enables a reduction in circuit scale.

摘要翻译： 可变增益数字滤波器包括布置在数字滤波器内的选择器和乘法器，用于调节增益，由此滤波器输入的位数为X，滤波器内的触发器数为Xxn位，并且（Yxn位）减小 在触发器的数量被启用。 数字滤波器内部的增益调节电路使电路规模缩小。

公开(公告)号：US20050128493A1

公开(公告)日：2005-06-16

申请号：US10921267

申请日：2004-08-19

申请人： Kohtaro Nemoto ,  Tetsujiro Kondo ,  Nobuyuki Asakura ,  Satoshi Inoue ,  Wataru Niitsuma ,  Tatsuya Ishii ,  Takahide Ayata ,  Masanori Yamanaka ,  Yasushi Tatehira

发明人： Kohtaro Nemoto ,  Tetsujiro Kondo ,  Nobuyuki Asakura ,  Satoshi Inoue ,  Wataru Niitsuma ,  Tatsuya Ishii ,  Takahide Ayata ,  Masanori Yamanaka ,  Yasushi Tatehira

IPC分类号： H04N7/00 ,  G06F15/00 ,  G09G3/20 ,  G09G5/00 ,  G09G5/39 ,  G09G5/391 ,  H04N5/44 ,  H04N7/01

CPC分类号： G09G5/005 ,  G09G3/20 ,  G09G5/006 ,  G09G2340/0407

摘要： A luminance signal Ya and a color-difference signal Ua/Va constituting an input image signal is transferred to a frame memory (first memory) in the unit of line synchronously with its horizontal synchronous signal and written therein. A memory TG211 reads out a read-out request RRQ. The cycle of this request RRQ is a time computed based on a single vertical effective period of an output image signal Sc and the number of lines objective for rate conversion of an input image signal Sa. The luminance signal Ya and color-difference signal Ua/Va are transferred in the unit of line from the frame memory to rate conversion units (second memory) through buffers. There occurs no deflection in this transfer cycle and in each transfer cycle, the stable data transmission band can be secured.

摘要翻译： 构成输入图像信号的亮度信号Ya和色差信号Ua / Va与其水平同步信号同步地被传送到帧存储器（第一存储器）并写入其中。 存储器TG 211读出读出请求RRQ。 该请求RRQ的周期是基于输出图像信号Sc的单个垂直有效周期和输入图像信号Sa的速率转换的行数目的计算的时间。 亮度信号Ya和色差信号Ua / Va以行为单位从帧存储器传送到速率转换单元（第二存储器）通过缓冲器。 在该传送周期中，在每个传送周期中不发生偏转，可以确保稳定的数据传输带。

公开(公告)号：US20050007860A1

公开(公告)日：2005-01-13

申请号：US10914363

申请日：2004-08-10

申请人： Kenji Kozakai ,  Takeshi Nakamura ,  Tatsuya Ishii ,  Motoyasu Tsunoda ,  Shinya Iguchi ,  Junichi Maruyama

发明人： Kenji Kozakai ,  Takeshi Nakamura ,  Tatsuya Ishii ,  Motoyasu Tsunoda ,  Shinya Iguchi ,  Junichi Maruyama

IPC分类号： G06F12/16 ,  G06F12/02 ,  G11C16/02 ,  G11C16/06 ,  G11C16/34 ,  G11C29/00 ,  G11C29/42 ,  G11C8/00

CPC分类号： G06F12/0246 ,  G06F11/1068 ,  G06F12/06 ,  G06F2212/1036 ,  G11C16/04 ,  G11C16/10 ,  G11C16/349 ,  G11C29/44 ,  G11C29/76 ,  G11C2029/0409

摘要： For a nonvolatile memory permitting electrical writing and erasing of information to be stored, such as a flash memory, the load on the system developer is to be reduced, and it is to be made possible to avoid, even if such important data for the system as management and address translation information are damaged, an abnormal state in which the system becomes unable to operate. The nonvolatile memory is provided with a replacing function to replace a group of memory cells including defective memory cells which are incapable of normal writing or erasion with a group of memory cells including no defective memory cell, a numbers of rewrites averaging function to grasp the number of data rewrites in each group of memory cells and to so perform replacement of memory cell groups that there may arise no substantial difference in the number of rewrites among a plurality of memory cell groups, and an error correcting function to detect and correct any error in data stored in the memory array, wherein first address translation information deriving from the replacing function and second address translation information deriving from the numbers of rewrites averaging function are stored in respectively prescribed areas in the memory array, and the first address translation information and second address translation information concerning the same memory cell group are stored in a plurality of sets in a time series.

摘要翻译： 对于允许电子写入和擦除要存储的信息（例如闪存）的非易失性存储器，系统开发者的负载将被减少，并且即使这样的系统的重要数据也可以避免 由于管理和地址转换信息被破坏，系统无法运行的异常状态。 非易失性存储器设置有替换功能，以替换包括不能正常写入或擦除的缺陷存储器单元的存储器单元组，所述存储器单元不包括不存在缺陷存储器单元的存储单元组，重写次数用于掌握数量 的每个存储器单元组中的数据重写，并且因此执行存储单元组的替换，使得多个存储单元组之间的重写次数可能没有显着差异，以及用于检测和校正任何错误的错误校正功能 存储在存储器阵列中的数据，其中从替换功能导出的第一地址转换信息和从重写平均函数导出的第二地址转换信息被存储在存储器阵列中的分别规定的区域中，并且第一地址转换信息和第二地址 关于相同存储单元组的翻译信息是sto 以时间序列的多个集合中的红色。

公开(公告)号：US06839646B2

公开(公告)日：2005-01-04

申请号：US10280018

申请日：2002-10-25

申请人： Tatsuya Ishii

发明人： Tatsuya Ishii

IPC分类号： G01R1/06 ,  G01Q60/30 ,  G01R31/302 ,  G01R31/307 ,  H01L21/66 ,  G01R27/28 ,  G01N23/00 ,  G01R31/305

CPC分类号： G01R31/307

摘要： An electron beam test system which can determine whether a potential is high or low for a DC signal or a signal having no potential change before the time of observation. The electron beam test system obtains potential contrast data for analysis by irradiating electron beam to a semiconductor integrated circuit device which is an analysis object. This system has a tester which supplies a test pattern signal for analysis to the semiconductor integrated circuit device and holds the supplied test pattern signal at a given time; an electron gun which irradiates electron beam to the semiconductor integrated circuit device in response to the hold; and a detector which detects the potential contrast data of the semiconductor integrated circuit device which is irradiated with electron beam.

摘要翻译： 一种电子束测试系统，其可以确定DC信号的电位是高电平还是低电平，或者在观察时间之前没有电位变化的信号。 电子束测试系统通过将电子束照射到作为分析对象的半导体集成电路器件而获得用于分析的潜在对比度数据。 该系统具有向半导体集成电路装置提供测试图案信号以供分析的测试器，并在给定时间保持所提供的测试图案信号; 电子枪，其响应于所述保持向半导体集成电路装置照射电子束; 以及检测器，其检测被电子束照射的半导体集成电路器件的潜在对比度数据。

公开(公告)号：US06683811B2

公开(公告)日：2004-01-27

申请号：US10388444

申请日：2003-03-17

申请人： Tatsuya Ishii ,  Hitoshi Miwa ,  Osamu Tsuchiya ,  Shooji Kubono

发明人： Tatsuya Ishii ,  Hitoshi Miwa ,  Osamu Tsuchiya ,  Shooji Kubono

IPC分类号： G11C1604

CPC分类号： G11C16/3427 ,  G11C16/0491 ,  G11C16/10 ,  G11C16/12 ,  G11C16/16 ,  G11C16/3404 ,  G11C16/3431 ,  G11C16/3459 ,  G11C2216/18

摘要： A nonvolatile semiconductor memory recovers variation in the threshold of a memory cell due to disturbance related to a word line. The nonvolatile memory continuously performs many writing operations without carrying out single-sector erasing after each writing operation, performing the additional writing operations quicker than the usual writing operation, and lightening the burden imposed on software for use in additional writing. The data stored in a designated sector is read out before being saved in a register, and the selected sector is subjected to single-sector erasing when a predetermined command is given. Then write expected value data is formed from the saved data and data to be additionally written, completing the writing operation.