Ink-jet recording medium
    71.
    发明申请
    Ink-jet recording medium 审中-公开
    喷墨记录介质

    公开(公告)号:US20050214484A1

    公开(公告)日:2005-09-29

    申请号:US11088810

    申请日:2005-03-25

    申请人: Takashi Kobayashi

    发明人: Takashi Kobayashi

    摘要: The present invention is an ink-jet recording medium having an ink-receiving layer including silica produced by a gas-phase process and a water-soluble resin on or over a support, wherein the density of silanol groups of the silica is from 1.0 to 2.3 SiOH groups/nm2.

    摘要翻译: 本发明是一种喷墨记录介质,其具有包含通过气相法生产的二氧化硅的油墨接受层和在载体上或其上的水溶性树脂,其中二氧化硅的硅烷醇基的密度为1.0〜 2.3SiOH基团/ nm 2。

    Nonvolatile semiconductor memory device and manufacturing method thereof
    72.
    发明申请
    Nonvolatile semiconductor memory device and manufacturing method thereof 审中-公开
    非易失性半导体存储器件及其制造方法

    公开(公告)号:US20050212034A1

    公开(公告)日:2005-09-29

    申请号:US11031484

    申请日:2005-01-10

    摘要: A technology realizing decreases of capacitance between the adjoining floating gates and of the threshold voltage shift caused by interference between the adjoining memory cells in a nonvolatile semiconductor memory device with the advances of miniaturization in the period following the 90 nm generation. By having the floating gate 3 of a memory cell with an inverse T-shape and the dimension of a part of the floating gate through the control gate 4 and the second insulator film 8 being smaller than the bottom part of the floating gate, the effects of a threshold voltage shift is reduced maintaining the adequate area of the gap between the floating gate 3 and the control gate 4, decreasing the opposing area of the gap of the floating gates 3 underneath the adjoining word lines WL, maintaining the capacity coupling ratio between the floating gate 3 and the control gate, and reducing the opposing area of the gap of the adjoining floating gates 3.

    摘要翻译: 一种实现相邻浮栅之间的电容减小的技术和由非易失性半导体存储器件中相邻的存储单元之间的干扰引起的阈值电压偏移与90nm代之后的周期内的小型化的进步。 通过使具有逆T形的存储单元的浮置栅极3和通过控制栅极4和第二绝缘膜8的一部分浮动栅极的尺寸小于浮动栅极的底部的尺寸, 维持阈值电压偏移的维持维持浮动栅极3和控制栅极4之间的间隙的适当面积,减小相邻字线WL下面的浮动栅极3的间隙的相对面积,从而保持 浮动栅极3和控制栅极,并且减小邻接的浮动栅极3的间隙的相对面积。

    Work vehicle
    73.
    发明申请
    Work vehicle 有权
    工作车辆

    公开(公告)号:US20050211487A1

    公开(公告)日:2005-09-29

    申请号:US10944435

    申请日:2004-09-17

    摘要: A work vehicle includes a traveling vehicle body and a hood provided at a front portion of the vehicle body for covering an engine room. The hood includes a front face having a plurality of first air vent holes and right and left side faces each having a plurality of second air vent holes. A radiator is mounted inside the hood, ambient air being drawn in through the first and second air vent holes toward the radiator. A vent hole area ratio of each side face of the hood determined by the second air vent holes is set smaller than a vent hole area ratio of the front face of the hood determined by the first air vent holes.

    摘要翻译: 工作车辆包括行进车体和设置在车体的前部的罩,用于覆盖发动机室。 罩包括具有多个第一排气孔的前表面,以及分别具有多个第二排气孔的左右侧面。 散热器安装在发动机罩内,环境空气通过第一和第二通气孔被吸入散热器。 由第二通气孔确定的罩的每个侧面的通气孔面积比设定为小于由第一通气孔确定的罩的前面的通气孔面积比。

    Inorganic fine particle dispersion and manufacturing method thereof as well as image-recording material
    75.
    发明申请
    Inorganic fine particle dispersion and manufacturing method thereof as well as image-recording material 审中-公开
    无机微粒分散体及其制造方法以及图像记录材料

    公开(公告)号:US20050186331A1

    公开(公告)日:2005-08-25

    申请号:US11063978

    申请日:2005-02-24

    摘要: The present invention relates to a method for producing an inorganic fine particle dispersion including adding inorganic fine particles and a dispersant to an aqueous medium under an addition condition in which a ratio (Dt/It) of an added amount Dt of the dispersant to an added amount It of the inorganic fine particles is made smaller than a ratio (D/I) of a final added amount D of the dispersant to a final added amount I of the inorganic fine particles, and to a method for producing an inorganic fine particle dispersion including adding inorganic fine particles to an aqueous medium containing at least water, a polymer dispersant and a metal salt, and then executing a dispersion process.

    摘要翻译: 本发明涉及一种无机细粒分散体的制造方法,其包括在添加条件下向无机微粒和分散剂中添加无机微粒和分散剂,其中分散剂的添加量Dt与添加的添加量的比(Dt / It) 量使无机细颗粒的比例小于分散剂的最终添加量D与无机细颗粒的最终添加量I的比(D / I),以及无机细颗粒分散体的制备方法 包括在至少含有水,聚合物分散剂和金属盐的水性介质中添加无机细颗粒,然后执行分散过程。

    Crawler traveling apparatus
    77.
    发明授权
    Crawler traveling apparatus 有权
    履带式旅行装置

    公开(公告)号:US06890042B2

    公开(公告)日:2005-05-10

    申请号:US10652895

    申请日:2003-08-29

    CPC分类号: B62D55/244

    摘要: A crawler traveling apparatus includes a rubber crawler belt having a plurality of driving projections formed with a predetermined peripheral pitch on an inner peripheral face of the belt, a drive wheel rotatable when engaged with the driving projections of the crawler belt for driving the belt, and a plurality of free wheels rotatable for laterally guiding the driving projections under movement. Each driving projection has an upper half having a lateral face including an upper half lateral face portion and a lower half having a lower half lateral face portion, the upper half lateral face portion having an erect inclination angle smaller than an erect inclination angle of the lower half lateral face portion. Each free wheel has an inner lateral face opposed to the driving projection, the inner lateral face having an inclined guide face having an inclination parallel to the lower half lateral face portion of the driving projection. The inclined guide face has a height L3 shorter than a height L1 of the lower half lateral face portion when an inner peripheral face of the crawler belt is placed under proper contact with an outer peripheral face of the free wheel.

    摘要翻译: 一种履带式行走装置,具备:橡胶履带,其具有在所述带的内周面上形成有规定的周向间距的多个驱动突起;与所述履带的驱动突起卡合的驱动轮,用于驱动所述带;以及 可旋转的多个自由轮,用于在运动下横向地引导驱动突起。 每个驱动突起具有上半部,其具有包括上半侧面部分和具有下半部侧面部分的下半部的侧面,上半侧面部分具有小于下半部分的直立倾斜角度的直立倾斜角度 半侧面部分。 每个自由轮具有与驱动突起相对的内侧面,内侧面具有倾斜导向面,该倾斜导向面平行于驱动突起的下半侧面部分。 当履带的内周面与自由轮的外周面适当接触地放置时,倾斜导向面的高度L 3比下半侧面部的高度L 1短。

    Semi tracked-type working vehicle
    78.
    发明申请
    Semi tracked-type working vehicle 有权
    半跟踪型工作车

    公开(公告)号:US20050060918A1

    公开(公告)日:2005-03-24

    申请号:US10488646

    申请日:2003-06-12

    摘要: A semicrawler-type working vehicle is provided having a vehicle body (3), a front steering control wheel (7) arranged at a front side of the vehicle body, a drive shaft (26) and a pivot shaft (22) arranged at a rear side of the vehicle body, and a semicrawler unit (2) driven by the drive shaft. The semicrawler-type working vehicle comprises: a track frame (16) by which the semicrawler unit (2) is supported via the pivot shaft (22) so as to be pivotable relative to the vehicle body (3); a drive wheel (11) arranged on the drive shaft (26); a front driven wheel (12) and a rear driven wheel (13) that are supported by the track frame (16) such that a horizontal distance from the drive wheel (11) to the front driven wheel (12) is longer than a horizontal distance from the drive wheel (11) to the rear driven wheel (13); and a crawler belt (15) that is wound around the drive wheel (11), the front driven wheel (12), and the rear driven wheel (13). The pivot shaft (22) is displaced forward than a vertical line that runs through a center of the drive wheel (11).

    摘要翻译: 本发明提供一种半履带式作业车,其具有车身(3),配置在车体前侧的前转向控制轮(7),驱动轴(26)和枢轴(22) 车身的后侧,以及由驱动轴驱动的半履带单元(2)。 所述半履带式作业车辆包括:履带架(16),所述履带架单元(2)经由所述枢轴(22)被支撑以相对于所述车体(3)枢转; 布置在所述驱动轴(26)上的驱动轮(11); 由履带架(16)支撑的前驱动轮(12)和后从动轮(13),使得从驱动轮(11)到前从动轮(12)的水平距离比水平 从驱动轮(11)到后从动轮(13)的距离; 以及卷绕在驱动轮(11),前从动轮(12)和后从动轮(13)周围的履带(15)。 枢轴(22)比穿过驱动轮(11)的中心的垂直线向前位移。

    Semiconductor device and method of manufacturing the same
    79.
    发明授权
    Semiconductor device and method of manufacturing the same 失效
    半导体装置及其制造方法

    公开(公告)号:US06849502B2

    公开(公告)日:2005-02-01

    申请号:US10457656

    申请日:2003-06-10

    摘要: Reliability of a semiconductor device having a nonvolatile memory comprising first through third gate electrodes is enhanced. With a flash memory having first gate electrodes (floating gate electrodes), second gate electrodes (control gate electrodes) and third gate electrodes, isolation parts are formed in a self-aligned manner against patterns of a conductor film for forming the third gate electrodes by filling up the respective isolation grooves and a gate insulator film for select nMISes in a peripheral circuit region is formed prior to the formation of the isolation parts. By so doing, deficiency with the gate insulator film for the select nMISes, caused by stress occurring to the isolation parts, can be reduced. Further, with the semiconductor device including the case of stacked memory cells, the patterns of the conductor film for forming the third gate electrodes, serving as a mask for forming the isolation parts in the self-aligned manner, can be formed without misalignment against channels.

    摘要翻译: 具有包括第一至第三栅电极的非易失性存储器的半导体器件的可靠性得到增强。 利用具有第一栅电极(浮栅电极),第二栅电极(控制栅电极)和第三栅电极的闪速存储器,隔离部分以自对准的方式形成,以抵抗用于形成第三栅电极的导体膜的图案 填充相应的隔离沟槽,并且在形成隔离部件之前形成用于在外围电路区域中选择的nMIS的栅极绝缘膜。 通过这样做,可以减少由隔离部分发生的应力引起的用于选择性nMIS的栅极绝缘膜的缺陷。 此外,通过包括堆叠的存储单元的情况的半导体器件,可以形成用作形成隔离部件的自对准方式的掩模的用于形成第三栅电极的导体膜的图案,而不对准通道 。

    Semiconductor device and process of producing the same
    80.
    发明授权
    Semiconductor device and process of producing the same 失效
    半导体器件及其制造方法

    公开(公告)号:US06835632B2

    公开(公告)日:2004-12-28

    申请号:US10460215

    申请日:2003-06-13

    IPC分类号: H01L2120

    摘要: The present invention provides a polycrystalline silicon conducting structure (e.g., a resistor) whose resistance value is controlled, and can be less variable and less dependent on temperature with respect to any resistant value, and a process of producing the same. Use is made of at least a two-layer structure including a first polycrystalline silicon layer of large crystal grain size and a second polycrystalline silicon layer of small crystal grain size, and the first polycrystalline silicon layer has a positive temperature dependence of resistance while the second polycrystalline silicon layer has a negative temperature dependence of resistance, or vice versa. Moreover, the polycrystalline silicon layer of large grain size can be formed by high dose ion implantation and annealing, or by depositing the layers by chemical vapor deposition at different temperatures so as to form large-grain and small-grain layers.

    摘要翻译: 本发明提供了一种其电阻值被控制的多晶硅导电结构(例如电阻器),并且可以相对于任何电阻值而言可以变化较小并且对温度的依赖性较小,及其制造方法。 使用至少包括具有大晶粒尺寸的第一多晶硅层和小晶粒尺寸的第二多晶硅层的两层结构,并且第一多晶硅层具有正的温度对电阻的依赖性,而第二多晶硅层的第二 多晶硅层具有负电阻的温度依赖性,反之亦然。 此外,可以通过高剂量离子注入和退火,或者通过在不同温度下的化学气相沉积来沉积这些层,形成大晶粒和小晶粒层,可以形成大晶粒尺寸的多晶硅层。