摘要:
A magnetic transducer including an electrically conductive shield (ECS) which is disposed between the substrate and first magnetic shield is described. The ECS is preferably embedded in an insulating undercoat layer. The ECS is preferably electrically isolated from the magnetic sensor element and is externally connected to a ground available in the disk drive through the arm electronics. Two alternative ways for connecting the ECS to a ground are described. In one embodiment which is only effective with single-ended input type arm electronics, the ECS is connected to a ground through a via to a lead pad for the read head which is connected to the ground of the arm electronics. In a second and more preferred embodiment a separate lead pad is included on the head to allow the ECS to be connected to electronic or case ground when the head is installed in the arm. The extent of the ECS should be sufficiently large to cover the read head portion of the transducer, i.e., from the edge of the first magnetic shield to the outer edges of the read contact pads, but should preferably not cover the write head pads.
摘要:
A magnetic device including memory cells is provided. Each memory cell can store multiple bits corresponding to multiple data storage layers. Desired spacing(s) and desired junction angle(s) for the data storage layers are determined in each memory cell. The desired junction angle(s) and the desired spacing(s) correspond to spin transfer switching currents for the data storage layers having. A magnetoresistive stack including plurality of layers for each of the memory cells is deposited. The memory cells include the data storage layers. A data storage layer layers is spaced apart from nearest data storage layer(s) by a distance corresponding to the desired spacing(s). A mask corresponding to the memory cells is provided on the layers. The memory cells are defined such that each memory cell has the desired junction angle(s) and the desired spacing(s) and such that the data storage layers for each of the memory cells is self-aligned.
摘要:
An embodiment includes a three terminal magnetic element for a semiconductor memory device. The magnetic element includes a reference layer; a free layer; a barrier layer disposed between the reference layer and the free layer; a first electrode; an insulating layer disposed between the electrode and the free layer; and a second electrode coupled to sidewalls of the free layer.
摘要:
A method and system provide a magnetic junction usable in a magnetic device and which resides on a substrate. The magnetic junction includes a reference layer, a nonmagnetic spacer layer, and a free layer. The nonmagnetic spacer layer is between the reference layer and the free layer. The free layer, the nonmagnetic spacer layer and the reference layer form nonzero angle(s) with the substrate. The magnetic junction is configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction.
摘要:
A magnetic device has a contact structure including a magnetic material therein. The contact structure is magnetostatically and/or electrically coupled to a magnetic element such as one having a magnetic tunneling junction (MTJ) multilayer structure. The magnetic material included in the contact structure is configured to compensate for an offset field acting on the free layer of the magnetic element by reference layers of the magnetic element.
摘要:
A method and system provide a magnetic junction usable in a magnetic device. The magnetic junction includes a pinned layer, a nonmagnetic spacer layer, a free layer, at least one insulating layer, and at least one magnetic insertion layer adjoining the at least one insulating layer. The nonmagnetic spacer layer is between the pinned layer and the free layer. The at least one insulating layer is adjacent to at least one of the free layer and the pinned layer. The at least one magnetic insertion layer adjoins the at least one insulating layer. In some aspects, the insulating layer(s) include at least one of magnesium oxide, aluminum oxide, tantalum oxide, ruthenium oxide, titanium oxide, and nickel oxide The magnetic junction is configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction.
摘要:
A method and system for providing a magnetic junction usable in a magnetic device are described. The magnetic junction includes a pinned layer, a plurality of nonmagnetic spacer layers, and a plurality of free layers. The free layers are interleaved with the nonmagnetic spacer layers. A first nonmagnetic spacer layer of the nonmagnetic spacer layers is between the free layers and the pinned layer. Each of the free layers is configured to be switchable between stable magnetic states when a write current is passed through the magnetic junction. Each of the free layers has a critical switching current density. The critical switching current density of one of the free layers changes monotonically from the critical switching current density of an adjacent free layer. The adjacent free layer is between the pinned layer and the one of the plurality of free layers.
摘要:
A method and apparatus for providing a write head with an improved pole tip to improve overwrite and/or adjacent track interference. A cross pole tip writer is provided with a shape that is designed to reduce the saturation on the pole tip and aid in the concentration of flux to the down track.
摘要:
A method and system for providing a magnetic junction usable in a magnetic device are described. The magnetic junction includes a pinned layer, a plurality of nonmagnetic spacer layers, and a plurality of free layers. The free layers are interleaved with the nonmagnetic spacer layers. A first nonmagnetic spacer layer of the nonmagnetic spacer layers is between the free layers and the pinned layer. Each of the free layers is configured to be switchable between stable magnetic states when a write current is passed through the magnetic junction. Each of the free layers has a critical switching current density. The critical switching current density of one of the free layers changes monotonically from the critical switching current density of an adjacent free layer. The adjacent free layer is between the pinned layer and the one of the plurality of free layers.
摘要:
A method for manufacturing a magnetic write head for perpendicular magnetic recording. The method includes forming a write pole, and then depositing a refill layer. A mask structure can be formed over the writ pole and refill layer, the mask structure being configured to define a stitched pole. An ion milling or reactive ion milling can then be performed to remove portions of the refill layer that are not protected by the mask structure. Then a magnetic material can be deposited to form a stitched write pole that defines a secondary flare point. The stitched pole can also be self aligned with an electrical lapping guide in order to accurately locate the front edge of the secondary flare point relative to the air bearing surface of the write head.