公开(公告)号：US07776621B2

公开(公告)日：2010-08-17

申请号：US11657549

申请日：2007-01-25

申请人： Wensheng Wang

发明人： Wensheng Wang

IPC分类号： H01L21/00

CPC分类号： H01L28/65 ,  H01L27/11507 ,  H01L28/75

摘要： An IrOx film of a thickness of 50 nm is formed on a PZT film by a sputtering method. The value of x is less than 2. Namely, an unsaturated iridium oxide film is formed. By performing RTA, the PZT film is completely crystallized. Thereafter, an IrOY film of a thickness of 50 nm to 100 nm is formed on the IrOX film by a sputtering method. The composition of IrOY is made a composition closer to the stoichiometric composition of IrO2 than the composition of IrOX (X

摘要翻译： 通过溅射法在PZT膜上形成厚度为50nm的IrOx膜。 x的值小于2.即，形成不饱和氧化铱膜。 通过进行RTA，PZT膜完全结晶。 此后，通过溅射法在IrOX膜上形成厚度为50nm至100nm的IrOY膜。 IrOY的组成被制成比IrOX的组成更接近于IrO2的化学计量组成（X

公开(公告)号：US20100105152A1

公开(公告)日：2010-04-29

申请号：US12647937

申请日：2009-12-28

申请人： Wensheng Wang

发明人： Wensheng Wang

IPC分类号： H01L21/3205

CPC分类号： H01L27/11502 ,  H01L27/11507 ,  H01L28/55 ,  H01L28/65

摘要： A lower electrode film is formed above a semiconductor substrate first, and then a ferroelectric film is formed on the lower electrode film. After that, an upper electrode film is formed on the ferroelectric film. When forming the upper electrode, an IrOx film containing crystallized small crystals when formed is formed on the ferroelectric film first, and then an IrOx film containing columnar crystals is formed.

摘要翻译： 首先在半导体基板的上方形成下电极膜，然后在下电极膜上形成铁电体膜。 之后，在铁电体膜上形成上部电极膜。 当形成上电极时，首先在铁电体膜上形成含有结晶化的小晶体的IrOx膜，然后形成含有柱状晶体的IrOx膜。

公开(公告)号：US20090315144A1

公开(公告)日：2009-12-24

申请号：US12548911

申请日：2009-08-27

申请人： Wensheng Wang

发明人： Wensheng Wang

IPC分类号： H01L29/92 ,  H01L21/02

CPC分类号： H01L21/02104 ,  H01L27/11507 ,  H01L28/55 ,  H01L28/65

摘要： An upper electrode of a ferroelectric capacitor has a first layer formed of a first oxide expressed by a chemical formula AOx1 (A: metal, O: oxygen) using a stoichiometric composition parameter x1, and expressed by a chemical formula AOx2 using a actual composition parameter x2, and a second layer formed of a second oxide, formed on the first layer, expressed by a chemical formula BOy1 (B: metal) using a stoichiometric composition parameter y1 and expressed by a chemical formula BOy2 using a actual composition parameter y2, which includes at least one of stone-wall crystal and column crystal.

摘要翻译： 铁电电容器的上电极具有使用化学式AOx1（A：金属，O：氧）表示的第一氧化物，使用化学计量组成参数x1形成的第一层，并由化学式AOx2表示，使用实际组成参数 x2，以及由化学式BOy1（B：金属）表示的第一层形成的第二层的第二层，使用化学计量组成参数y1，并使用实际组成参数y2由化学式BOy2表示， 包括石壁晶体和柱晶中的至少一种。

公开(公告)号：US07547933B2

公开(公告)日：2009-06-16

申请号：US10695643

申请日：2003-10-29

申请人： Tomohiro Takamatsu ,  Junichi Watanabe ,  Ko Nakamura ,  Wensheng Wang ,  Naoyuki Sato ,  Aki Dote ,  Kenji Nomura ,  Yoshimasa Horii ,  Masaki Kurasawa ,  Kazuaki Takai

发明人： Tomohiro Takamatsu ,  Junichi Watanabe ,  Ko Nakamura ,  Wensheng Wang ,  Naoyuki Sato ,  Aki Dote ,  Kenji Nomura ,  Yoshimasa Horii ,  Masaki Kurasawa ,  Kazuaki Takai

IPC分类号： H01L21/00

CPC分类号： H01L28/65 ,  H01L21/31691 ,  H01L28/56

摘要： There are provided a capacitor lower electrode formed on an adhesive layer, whose surface roughness is 0.79 nm or less, and having a (111) orientation that is inclined from a perpendicular direction to an upper surface of a substrate by 2.3° or less, a ferroelectric layer having a structure the (111) orientation of which is inclined from the perpendicular direction to the upper surface of the substrate by 3.5° or less, and a capacitor upper electrode.

摘要翻译： 提供一种形成在粘合剂层上的电容器下电极，其表面粗糙度为0.79nm或更小，并且具有从垂直于衬底上表面的垂直方向倾斜2.3°或更小的（111）取向， 具有（111）取向从基板的垂直方向倾斜3.5°以下的结构的铁电体层和电容器上电极。

公开(公告)号：US20080105911A1

公开(公告)日：2008-05-08

申请号：US11957711

申请日：2007-12-17

申请人： Wensheng Wang

发明人： Wensheng Wang

IPC分类号： H01L27/10 ,  H01L21/822

CPC分类号： H01L27/11507 ,  H01L27/11502 ,  H01L28/57 ,  H01L28/65

摘要： A ferroelectric capacitor (42) is formed over a semiconductor substrate (10), and thereafter, a barrier film (46) directly covering the ferroelectric capacitor (42) is formed. Then, an interlayer insulating film (48) is formed and flattened. Then, an inclined groove is formed in the interlayer insulating film (48), and a barrier film (50) is formed over the entire surface.

摘要翻译： 在半导体衬底（10）上形成铁电电容器（42），然后形成直接覆盖铁电电容器（42）的阻挡膜（46）。 然后，形成并平坦化层间绝缘膜（48）。 然后，在层间绝缘膜（48）中形成倾斜槽，在整个表面上形成阻挡膜（50）。

公开(公告)号：US20080073685A1

公开(公告)日：2008-03-27

申请号：US11949387

申请日：2007-12-03

申请人： Wensheng Wang

发明人： Wensheng Wang

IPC分类号： H01L29/94

CPC分类号： H01L21/76832 ,  H01L21/76802 ,  H01L21/76814 ,  H01L21/76826 ,  H01L21/76829 ,  H01L24/05 ,  H01L27/11502 ,  H01L27/11507 ,  H01L28/57 ,  H01L28/75 ,  H01L2224/02126 ,  H01L2224/02166 ,  H01L2224/05624 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2924/30105 ,  H01L2924/01029 ,  H01L2924/00

摘要： Ferroelectric capacitors (42) are formed over a semiconductor substrate (10), then, a barrier film (46) directly covering the ferroelectric capacitors (42) is formed. Thereafter, wirings (56a etc.) connected to the ferroelectric capacitors (42) are formed. Further, a barrier film (58) is formed at a position higher than the wirings (56a etc.). In forming the barrier film (46), a film stack is formed, the film stack including at least two kinds of diffusion preventive films (46a and 46b) having different components and preventing diffusion of hydrogen or water.

摘要翻译： 铁电电容器（42）形成在半导体衬底（10）上，然后形成直接覆盖铁电电容器（42）的阻挡膜（46）。 之后，形成与强电介质电容器（42）连接的布线（56a等）。 此外，在高于布线（56a等）的位置处形成阻挡膜（58）。 在形成阻挡膜（46）时，形成膜堆叠，所述膜堆叠包括至少两种具有不同成分的防扩散膜（46a和46b），并防止氢或水的扩散。

公开(公告)号：US07148532B2

公开(公告)日：2006-12-12

申请号：US11139804

申请日：2005-05-31

申请人： Kenji Nomura ,  Wensheng Wang

发明人： Kenji Nomura ,  Wensheng Wang

IPC分类号： H01L29/94

CPC分类号： H01L27/11507 ,  H01L27/11502 ,  H01L28/55 ,  H01L28/65

摘要： Additional elements of Ca, Sr, and Ir are added to a single layer lead lanthanum zirconate titanate (PLZT), thereby decreasing a c/a ratio to within a range from 1.00 to 1.008 smaller than a general c/a of a range from about 1.01 to 1.03 generally used in a lead lanthanum zirconate titanate (PLZT) crystal having a crystal structure of a tetragonal system. With this arrangement, a large switching charge Qsw can be obtained without thinning the PLZT layer even when the operation voltage is 3.0 V or less.

摘要翻译： 将Ca，Sr和Ir的附加元素加入到单层铅酸镧锆酸铅（PLZT）中，从而将ac / a比降低到1.00〜1.008的范围内，比通常的c / a为约1.01 至1.03，通常用于具有四方晶系的晶体结构的铅酸镧锆酸铅（PLZT）晶体。 利用这种布置，即使在3.0V或更小的工作电压下，也可以获得大的开关电荷Qsw而不使PLZT层变薄。

公开(公告)号：US08405188B2

公开(公告)日：2013-03-26

申请号：US12548911

申请日：2009-08-27

申请人： Wensheng Wang

发明人： Wensheng Wang

IPC分类号： H01L29/92 ,  H01L21/02

CPC分类号： H01L21/02104 ,  H01L27/11507 ,  H01L28/55 ,  H01L28/65

摘要： An upper electrode of a ferroelectric capacitor has a first layer formed of a first oxide expressed by a chemical formula AOx1 (A: metal, O: oxygen) using a stoichiometric composition parameter x1, and expressed by a chemical formula AOx2 using a actual composition parameter x2, and a second layer formed of a second oxide, formed on the first layer, expressed by a chemical formula BOy1 (B: metal) using a stoichiometric composition parameter y1 and expressed by a chemical formula BOy2 using a actual composition parameter y2, which includes at least one of stone-wall crystal and column crystal.

摘要翻译： 铁电电容器的上电极具有使用化学式AOx1（A：金属，O：氧）表示的第一氧化物，使用化学计量组成参数x1形成的第一层，并由化学式AOx2表示，使用实际组成参数 x2，以及由化学式BOy1（B：金属）表示的第一层形成的第二层的第二层，使用化学计量组成参数y1，并使用实际组成参数y2由化学式BOy2表示， 包括石壁晶体和柱晶中的至少一种。

公开(公告)号：US08390045B2

公开(公告)日：2013-03-05

申请号：US12547126

申请日：2009-08-25

申请人： Wensheng Wang

发明人： Wensheng Wang

IPC分类号： H01L29/43 ,  H01L21/8239

CPC分类号： H01L28/40 ,  H01L27/11502 ,  H01L27/11507 ,  H01L28/55 ,  H01L28/65

摘要： A semiconductor device includes a substrate and a ferroelectric capacitor including a lower electrode, a ferroelectric film, and an upper electrode. The upper electrode includes a first layer formed of an oxide whose stoichiometric composition is expressed as AOx1 and whose actual composition is expressed as AOx2; a second layer formed on the first layer and formed of an oxide whose stoichiometric composition is expressed as BOy1 and whose actual composition is expressed as BOy2; and a metal layer formed on the second layer. The second layer is higher in ratio of oxidation than the first layer. The composition parameters x1, x2, y1, and y2 satisfy y2/y1>x2/x1, and the second layer includes an interface layer of the stoichiometric composition formed at an interface with the metal layer. The interface layer is higher in ratio of oxidation than the rest of the second layer.

公开(公告)号：US08338249B2

公开(公告)日：2012-12-25

申请号：US12031960

申请日：2008-02-15

申请人： Makoto Takahashi ,  Mitsushi Fujiki ,  Kenkichi Suezawa ,  Wensheng Wang ,  Ko Nakamura

发明人： Makoto Takahashi ,  Mitsushi Fujiki ,  Kenkichi Suezawa ,  Wensheng Wang ,  Ko Nakamura

IPC分类号： H01L21/8234

CPC分类号： H01L27/0733 ,  G11C11/22 ,  H01L27/11507 ,  H01L28/55

摘要： A method for manufacturing a semiconductor device comprises: forming a lower electrode on a semiconductor substrate, sputtering a ferroelectric film on the lower electrode using a target, thermal treating the ferroelectric film in an atmosphere containing oxygen in accordance with an accumulated period of use of the target for fabricating the ferroelectric film, and forming an upper electrode on the ferroelectric film.

摘要翻译： 一种制造半导体器件的方法包括：在半导体衬底上形成下电极，使用靶溅射下电极上的强电介质膜，根据累积的使用时间在含氧气氛中对铁电体膜进行热处理 用于制造铁电体膜的目标，并且在铁电体膜上形成上电极。