公开(公告)号：US07140374B2

公开(公告)日：2006-11-28

申请号：US10802460

申请日：2004-03-16

申请人： Andrew D. Bailey, III ,  Shrikant P. Lohokare ,  Arthur M. Howald ,  Yunsang Kim

发明人： Andrew D. Bailey, III ,  Shrikant P. Lohokare ,  Arthur M. Howald ,  Yunsang Kim

IPC分类号： B08B9/00 ,  B44C1/22

CPC分类号： B08B7/00 ,  B08B7/0035 ,  B08B7/0071 ,  H01J37/3244 ,  H01J37/32522 ,  H01J37/32862 ,  H01J2237/022 ,  H01L21/3065 ,  H01L21/32115 ,  H01L21/32136 ,  H01L21/67034 ,  H01L21/67051 ,  H01L21/67069 ,  H01L21/6708 ,  H01L21/7684 ,  Y10S438/905

摘要： A method for cleaning a processing chamber that includes heating an inner surface of the processing chamber to a first temperature. The first temperature can be sufficient to cause a first species to become volatile. The first species can be one of several species deposited on the inner surface. A cleaning chemistry is injected into the processing chamber. The cleaning chemistry can be reactive with a second one of the species to convert the second species to the first species. The volatilized first species can also be output from the processing chamber. A system for cleaning the process chamber is also described.

公开(公告)号：US07129167B1

公开(公告)日：2006-10-31

申请号：US10879598

申请日：2004-06-28

申请人： Andrew D. Bailey, III ,  Shrikant P. Lohokare ,  Yunsang Kim ,  Simon McClatchie

发明人： Andrew D. Bailey, III ,  Shrikant P. Lohokare ,  Yunsang Kim ,  Simon McClatchie

IPC分类号： H01L21/44

CPC分类号： H01L21/7684 ,  H01L21/02074 ,  H01L21/32115 ,  H01L21/32136 ,  H01L21/67046 ,  H01L21/67051

摘要： A method of cleaning a substrate includes receiving a substrate and applying a stress-free cleaning process to the top surface of the substrate. The substrate includes a top surface that is substantially free of device dependent planarity nonuniformities and device independent planarity nonuniformities. The top surface also includes a first material and a device structure formed in the first material, the device structure being formed from a second material. The device structure has a device surface exposed. The device surface has a first surface roughness. A system for stress-free cleaning a substrate is also described.

摘要翻译： 清洁基板的方法包括接收基板并向基板的顶表面施加无应力清洁处理。 衬底包括基本上没有与器件相关的平面不均匀性和器件独立平面度不均匀性的顶表面。 顶表面还包括形成在第一材料中的第一材料和器件结构，该器件结构由第二材料形成。 器件结构具有暴露的器件表面。 器件表面具有第一表面粗糙度。 还描述了一种用于无应力清洁基底的系统。

公开(公告)号：US20060219267A1

公开(公告)日：2006-10-05

申请号：US11444942

申请日：2006-05-31

申请人： Andrew Bailey ,  Shrikant Lohokare ,  Arthur Howald ,  Yunsang Kim

发明人： Andrew Bailey ,  Shrikant Lohokare ,  Arthur Howald ,  Yunsang Kim

IPC分类号： B08B9/00

CPC分类号： B08B7/00 ,  B08B7/0035 ,  B08B7/0071 ,  H01J37/3244 ,  H01J37/32522 ,  H01J37/32862 ,  H01J2237/022 ,  H01L21/3065 ,  H01L21/32115 ,  H01L21/32136 ,  H01L21/67034 ,  H01L21/67051 ,  H01L21/67069 ,  H01L21/6708 ,  H01L21/7684 ,  Y10S438/905

摘要： A method for cleaning a processing chamber that includes heating an inner surface of the processing chamber to a first temperature. The first temperature can be sufficient to cause a first species to become volatile. The first species can be one of several species deposited on the inner surface. A cleaning chemistry is injected into the processing chamber. The cleaning chemistry can be reactive with a second one of the species to convert the second species to the first species. The volatilized first species can also be output from the processing chamber. A system for cleaning the process chamber is also described.

摘要翻译： 一种用于清洁处理室的方法，包括将处理室的内表面加热至第一温度。 第一个温度足以使第一个物质变得挥发。 第一种可以是沉积在内表面上的几种物质之一。 将清洁化学品注入到处理室中。 清洁化学品可以与第二种物质反应以将第二种类转化为第一种。 挥发的第一种也可以从处理室输出。 还描述了用于清洁处理室的系统。

公开(公告)号：US06669858B2

公开(公告)日：2003-12-30

申请号：US10011369

申请日：2001-11-05

申请人： Claes H. Bjorkman ,  Min Melissa Yu ,  Hongquing Shan ,  David W. Cheung ,  Wai-Fan Yau ,  Kuowei Liu ,  Nasreen Gazala Chapra ,  Gerald Yin ,  Farhad K. Moghadam ,  Judy H. Huang ,  Dennis Yost ,  Betty Tang ,  Yunsang Kim

发明人： Claes H. Bjorkman ,  Min Melissa Yu ,  Hongquing Shan ,  David W. Cheung ,  Wai-Fan Yau ,  Kuowei Liu ,  Nasreen Gazala Chapra ,  Gerald Yin ,  Farhad K. Moghadam ,  Judy H. Huang ,  Dennis Yost ,  Betty Tang ,  Yunsang Kim

IPC分类号： B44C122

CPC分类号： H01L21/76835 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/022 ,  H01L21/02208 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/3121 ,  H01L21/31612 ,  H01L21/31633 ,  H01L21/76801 ,  H01L21/76802 ,  H01L21/76807 ,  H01L21/76829

摘要： A method of depositing and etching dielectric layers having low dielectric constants and etch rates that vary by at least 3:1 for formation of horizontal interconnects. The amount of carbon or hydrogen in the dielectric layer is varied by changes in deposition conditions to provide low k dielectric layers that can replace etch stop layers or conventional dielectric layers in damascene applications. A dual damascene structure having two or more dielectric layers with dielectric constants lower than about 4 can be deposited in a single reactor and then etched to form vertical and horizontal interconnects by varying the concentration of a carbon:oxygen gas such as carbon monoxide. The etch gases for forming vertical interconnects preferably comprises CO and a fluorocarbon, and CO is preferably excluded from etch gases for forming horizontal interconnects.