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    Method for transferring a nanolayer
    72.
    发明授权
    Method for transferring a nanolayer 有权
    转移纳米层的方法

    公开(公告)号：US08377243B2

    公开(公告)日：2013-02-19

    申请号：US12595314

    申请日：2008-04-11

    Applicant: Armin Gölzhäuser ,  Christoph Nottbohm ,  André Beyer

    Inventor： Armin Gölzhäuser ,  Christoph Nottbohm ,  André Beyer

    IPC: B32B37/14 ,  B32B38/10 ,  B32B43/00

    CPC classification number: B05D1/283 ,  B81C1/0038 ,  B81C2201/0191 ,  B82Y30/00 ,  B82Y40/00

    Abstract: The invention relates to a method for transferring a nano-layer (1) from a first substrate (5, 105) to a second substrate (30, 130), wherein the nano-layer (1) comprises a self-aggregating monolayer with cross-linked phenyl units and/or a mono-atomic graphite layer (graphene), wherein the method comprises the following steps: a. applying a transfer medium (20, 120) onto nano-layer (1), wherein in this step or afterwards the transfer medium (20, 120) is transformed from a liquid or gaseous phase in a solid phase; b. separating the transfer medium (20, 120) and the nano-layer (1) from the first substrate (5, 105); and c. applying the transfer medium (20, 120) and the nano-layer (1) onto the second substrate (30, 130); and d. removing the transfer medium (20, 120).

    Abstract translation: 本发明涉及一种将纳米层（1）从第一衬底（5,105）转移到第二衬底（30,130）的方法，其中所述纳米层（1）包括具有交叉的自聚集单层 连接的苯基单元和/或单原子石墨层（石墨烯），其中该方法包括以下步骤：a。 将转印介质（20,120）施加到纳米层（1）上，其中在该步骤中或之后，转移介质（20,120）从固相中的液相或气相转化; b。 从所述第一基板（5,105）分离所述转印介质（20,120）和所述纳米层（1）; 和c。 将所述转印介质（20,120）和所述纳米层（1）施加到所述第二基板（30,130）上; 和d。 去除所述转印介质（20,120）。

    Sub-micron decal transfer lithography
    73.
    发明授权
    Sub-micron decal transfer lithography 失效
    亚微米贴花转印光刻

    公开(公告)号：US08252191B2

    公开(公告)日：2012-08-28

    申请号：US11911787

    申请日：2006-05-05

    Applicant: Ahn Heejoon ,  Ralph Nuzzo ,  Anne Shim

    Inventor： Ahn Heejoon ,  Ralph Nuzzo ,  Anne Shim

    IPC: B44C1/22

    CPC classification number: G03F7/0002 ,  B41M1/34 ,  B41M3/003 ,  B81C1/0038 ,  B81C2201/019 ,  B81C2201/0191 ,  B82Y10/00 ,  B82Y40/00

    Abstract: The present invention provides a method of sub-micron decal transfer lithography. The method includes forming a first pattern in a surface of a first silicon-containing elastomer, bonding at least a portion of the first pattern to a substrate, and etching a portion of at least one of the first silicon-containing elastomer and the substrate.

    Abstract translation: 本发明提供了亚微米贴花转移光刻方法。 该方法包括在第一含硅弹性体的表面上形成第一图案，将第一图案的至少一部分结合到基底，以及蚀刻第一含硅弹性体和基底中的至少一个的一部分。

    GRAPHENE-BASED STRUCTURE, METHOD OF SUSPENDING GRAPHENE MEMBRANE, AND METHOD OF DEPOSITING MATERIAL ONTO GRAPHENE MEMBRANE
    74.
    发明申请
    GRAPHENE-BASED STRUCTURE, METHOD OF SUSPENDING GRAPHENE MEMBRANE, AND METHOD OF DEPOSITING MATERIAL ONTO GRAPHENE MEMBRANE 审中-公开
    基于石墨的结构，悬浮石墨膜的方法和沉积在石墨膜上的材料的方法

    公开(公告)号：US20120183738A1

    公开(公告)日：2012-07-19

    申请号：US13420226

    申请日：2012-03-14

    Applicant: Alexander K. Zettl ,  Jannik Christian Meyer

    Inventor： Alexander K. Zettl ,  Jannik Christian Meyer

    IPC: B32B3/24 ,  B32B9/00 ,  B32B38/10 ,  C23C14/30 ,  B82Y30/00

    CPC classification number: B81C99/008 ,  B01D71/021 ,  B81B2203/0127 ,  B81C2201/0191 ,  H01J37/20 ,  Y10T428/24562 ,  Y10T428/24802

    Abstract: An embodiment of a method of suspending a graphene membrane on a support structure includes attaching graphene to a substrate. A pre-fabricated support structure having the gap is attached to the graphene. The graphene and the pre-fabricated support structure are then separated from the substrate which leaves the graphene membrane suspended on the pre-fabricated support structure. An embodiment of a method of depositing material includes placing a support structure having a suspended graphene membrane under vacuum. A precursor is adsorbed to a surface of the graphene membrane. A portion of the graphene membrane is exposed to a focused electron beam which deposits a material from the precursor onto the graphene membrane. An embodiment of a graphene-based structure includes a support structure having a gap, a graphene membrane suspended across the gap, and a material deposited in a pattern on the graphene membrane.

    Abstract translation: 将石墨烯膜悬浮在支撑结构上的方法的实施例包括将石墨烯附着到基底上。 具有间隙的预制支撑结构附着在石墨烯上。 然后将石墨烯和预制的支撑结构与离开留在预制支撑结构上的石墨烯膜的基板分离。 沉积材料的方法的一个实施例包括将具有悬浮石墨烯薄膜的支撑结构置于真空下。 前体被吸附到石墨烯膜的表面上。 石墨烯膜的一部分暴露于聚焦电子束，其将材料从前体沉积到石墨烯膜上。 基于石墨烯的结构的一个实施例包括具有间隙的支撑结构，悬浮在间隙上的石墨烯膜以及以石墨烯膜上的图案沉积的材料。

    Controlled process and resulting device
    78.
    发明授权
    Controlled process and resulting device 有权

    公开(公告)号：US07776717B2

    公开(公告)日：2010-08-17

    申请号：US11841970

    申请日：2007-08-20

    Applicant: Francois J. Henley ,  Nathan W. Cheung

    Inventor： Francois J. Henley ,  Nathan W. Cheung

    IPC: H01L21/30

    CPC classification number: H01L21/76254 ,  B81C1/0038 ,  B81C2201/0191 ,  H01L21/2007

    Abstract: A technique for forming a film of material (12) from a donor substrate (10). The technique has a step of introducing energetic particles (22) through a surface of a donor substrate (10) to a selected depth (20) underneath the surface, where the particles have a relatively high concentration to define a donor substrate material (12) above the selected depth. An energy source is directed to a selected region of the donor substrate to initiate a controlled cleaving action of the substrate (10) at the selected depth (20), whereupon the cleaving action provides an expanding cleave front to free the donor material from a remaining portion of the donor substrate.

    Method of fabricating CMUTs that generate low-frequency and high-intensity ultrasound
    79.
    发明申请
    Method of fabricating CMUTs that generate low-frequency and high-intensity ultrasound 审中-公开
    制造产生低频和高强度超声的CMUT的方法

    公开(公告)号：US20100173437A1

    公开(公告)日：2010-07-08

    申请号：US12589364

    申请日：2009-10-21

    Applicant: Ira O. Wygant ,  Mario Kupnik ,  Butrus T. Khuri-Yakub

    Inventor： Ira O. Wygant ,  Mario Kupnik ,  Butrus T. Khuri-Yakub

    IPC: H01L21/302

    CPC classification number: B81C1/00182 ,  B06B1/0292 ,  B81B2203/0127 ,  B81C2201/019 ,  B81C2201/0191

    Abstract: The present invention provides a method of fabricating low-frequency and high-intensity ultrasound CMUTs that includes using deep reactive ion (DRIE) etching to etch at least one cavity in a first surface of a conductive silicon wafer, growing an insulating layer on at least the first surface of the conductive silicon wafer, bonding a silicon layer of a SOI wafer to the insulating layer, where the SOI wafer includes a handle layer, a buried oxide layer and a conductive silicon layer. The handle layer and the buried oxide layer of the SOI wafer are removed, where the conductive layer of the SOI wafer forms a membrane across at least one cavity, and electrically isolating at least one the membrane across the at least one cavity, where at least one the low-frequency and high-intensity ultrasound CMUT is provided.

    Abstract translation: 本发明提供一种制造低频和高强度超声CMUT的方法，其包括使用深反应离子（DRIE）蚀刻来蚀刻导电硅晶片的第一表面中的至少一个空腔，至少在绝缘层上生长 导电硅晶片的第一表面，将SOI晶片的硅层接合到绝缘层，其中SOI晶片包括手柄层，掩埋氧化物层和导电硅层。 去除SOI晶片的处理层和掩埋氧化物层，其中SOI晶片的导电层在至少一个空腔上形成膜，并且跨过至少一个空腔电隔离至少一个膜，其中至少 一个是提供低频和高强度超声CMUT。

    Decal transfer lithography
    80.
    发明授权
    Decal transfer lithography 有权
    贴片转印光刻

    公开(公告)号：US07662545B2

    公开(公告)日：2010-02-16

    申请号：US10965279

    申请日：2004-10-14

    Applicant: Ralph G. Nuzzo ,  William R. Childs ,  Michael J. Motala ,  Keon Jae Lee

    Inventor： Ralph G. Nuzzo ,  William R. Childs ,  Michael J. Motala ,  Keon Jae Lee

    IPC: G03F7/00

    CPC classification number: G03F7/0002 ,  B81C1/0038 ,  B81C2201/0159 ,  B81C2201/0191 ,  B81C2203/038 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/34 ,  G03F7/346

    Abstract: A method of making a microstructure includes selectively activating a portion of a surface of a silicon-containing elastomer, contacting the activated portion with a substance, and bonding the activated portion and the substance, such that the activated portion of the surface and the substance in contact with the activated portion are irreversibly attached. The selective activation may be accomplished by positioning a mask on the surface of the silicon-containing elastomer, and irradiating the exposed portion with UV radiation.

    Abstract translation: 制造微结构的方法包括选择性地激活含硅弹性体的表面的一部分，使活化部分与物质接触，并且将活化部分和物质接合，使得表面的活化部分和物质在 与活化部分的接触不可逆地附着。 选择性激活可以通过将掩模定位在含硅弹性体的表面上，并用UV辐射照射暴露部分来实现。

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