摘要:
The instant disclosure describes a device for positioning a moveable object which can be moved over a distance of the order of 1 nanometer in a time of 1 microsecond or less, comprising: a microtip; first piezoelectric positioning, polarization, detection and control means for moving the microtip relative to the object and bringing it to a distance of the order of 1 nanometer from the object in order to make a tunnel current flow between the microtip and the object, for measuring the tunnel current and for slaving, depending on the measured tunnel current, the distance between the microtip and the object to a constant value (dref); and second positioning and control means which are capacitively coupled to the object so as to oppose an attractive force between the object and the microtip depending on the measured tunnel current, the second means being tied to a reference plane.
摘要:
A micromovement measuring device has a first element such as a probe tip or flat plate coupled to a test body (107) the movement of which is to be measured. A second element (104) is located adjacent to the first element, to form a gap (108) therebetween. As the test body and the first element gradually move away from the measuring element, so increasing the size of the gap, the second element is repeatedly moved up, to restore the gap to its original size. These repeated small quantized movements of the measuring element (104) are counted, and are used to provide an indication of how far the test body (107) has moved. In other embodiments, the first element may gradually move toward the second element, with the latter repeatedly moving away.
摘要:
A micromovement measuring device has a first element such as a probe tip or flat plate coupled to a test body (107) the movement of which is to be measured. A second element (104) is located adjacent to the first element, to form a gap (108) therebetween. As the test body and the first element gradually move away from the measuring element, so increasing the size of the gap, the second element is repeatedly moved up, to restore the gap to its original size. These repeated small quantized movements of the measuring element (104) are counted, and are used to provide an indication of how far the test body (107) has moved. In other embodiments, the first element may gradually move toward the second element, with the latter repeatedly moving away.
摘要:
A plurality of densely packed nano-particles are arrayed on a elastic substrate via an intervening spacer by a combination of self-assembly methods or imprinting. The coated substrate is useful as a sensor device as the substrate is sufficiently non-rigid such that the deformation increases the separation between nano-particles resulting in a measurable change in the physical properties of the array. When the array comprises of closely packed conductive nano-particles deformation of the substrate disturbs the electrical continuity between the particles resulting in a significant increase in resistivity. The various optical properties of the device may exhibit measurable changes depending on the size and composition of the nano-particles, as well as the means for attaching them to the substrate.
摘要:
A MEM tunneling gyroscope assembly includes (1) a beam structure, and a mating structure defined on a first substrate or wafer; and (2) at least one contact structure, and a mating structure defined on a second substrate or wafer, the mating structure on the second substrate or wafer being of a complementary shape to the mating structure on the first substrate or wafer; and (3) a bonding layer is disposed on at least one of said mating structures for bonding the mating structure defined on the first substrate or wafer to the mating structure on the second substrate or wafer.
摘要:
A method of making a micro electromechanical gyroscope. A cantilevered beam structure, first portions of side drive electrodes and a mating structure are defined on a first substrate or wafer; and at least one contact structure, second portions of the side drive electrodes and a mating structure are defined on a second substrate or wafer, the mating structure on the second substrate or wafer being of a complementary shape to the mating structure on the first substrate or wafer and the first and second portions of the side drive electrodes being of a complementary shape to each other. A bonding layer, preferably a eutectic bonding layer, is provided on at least one of the mating structures and one or the first and second portions of the side drive electrodes. The mating structure of the first substrate is moved into a confronting relationship with the mating structure of the second substrate or wafer. Pressure is applied between the two substrates so as to cause a bond to occur between the two mating structures at the bonding or eutectic layer and also between the first and second portions of the side drive electrodes to cause a bond to occur therebetween. Then the first substrate or wafer is removed to free the cantilevered beam structure for movement relative to the second substrate or wafer. The bonds are preferably eutectic bonds.
摘要:
Diamond microtip field emitters are used in diode and triode vacuum microelectronic devices, sensors and displays. Diamond diode and triode devices having integral anode and grid structures can be fabricated. Ultra-sharp tips are formed on the emitters in a fabrication process in which diamond is deposited into mold cavities in a two-step deposition sequence. During deposition of the diamond, the carbon graphite content is carefully controlled to enhance emission performance. The tips or the emitters are treated by post-fabrication processes to further enhance performance.
摘要:
An ultrananocrystalline diamond (UNCD) element formed in a cantilever configuration is used in a highly sensitive, ultra-small sensor for measuring acceleration, shock, vibration and static pressure over a wide dynamic range. The cantilever UNCD element may be used in combination with a single anode, with measurements made either optically or by capacitance. In another embodiment, the cantilever UNCD element is disposed between two anodes, with DC voltages applied to the two anodes. With a small AC modulated voltage applied to the UNCD cantilever element and because of the symmetry of the applied voltage and the anode-cathode gap distance in the Fowler-Nordheim equation, any change in the anode voltage ratio V1/V2 required to maintain a specified current ratio precisely matches any displacement of the UNCD cantilever element from equilibrium. By measuring changes in the anode voltage ratio required to maintain a specified current ratio, the deflection of the UNCD cantilever can be precisely determined. By appropriately modulating the voltages applied between the UNCD cantilever and the two anodes, or limit electrodes, precise independent measurements of pressure, uniaxial acceleration, vibration and shock can be made. This invention also contemplates a method for fabricating the cantilever UNCD structure for the sensor.
摘要:
A method of making a micro electro-mechanical switch or tunneling sensor. A cantilevered beam structure and a mating structure are defined on an etch stop layer on a first substrate or wafer; and at least one contact structure and a mating structure are defined on a second substrate or wafer, the mating structure on the second substrate or wafer being of a complementary shape to the mating structure on the first substrate or wafer. A bonding layer, preferably a eutectic bonding layer, is provided on at least one of the mating structures. The mating structure of the first substrate is moved into a confronting relationship with the mating structure of the second substrate or wafer. Pressure is applied between the two substrates so as to cause a bond to occur between the two mating structures at the bonding or eutectic layer. Then the first substrate or wafer and the etch stop layer are removed to free the cantilevered beam structure for movement relative to the second substrate or wafer.
摘要:
A method of making a micro electro-mechanical switch or tunneling sensor. A cantilevered beam structure and a mating structure are defined on an etch stop layer on a first substrate or wafer; and at least one contact structure and a mating structure are defined on a second substrate or wafer, the mating structure on the second substrate or wafer being of a complementary shape to the mating structure on the first substrate or wafer. A bonding layer, preferably a eutectic bonding layer, is provided on at least one of the mating structures. The mating structure of the first substrate is moved into a confronting relationship with the mating structure of the second substrate or wafer. Pressure is applied between the two substrates so as to cause a bond to occur between the two mating structures at the bonding or eutectic layer. Then the first substrate or wafer and the etch stop layer are removed to free the cantilevered beam structure for movement relative to the second substrate or wafer.