摘要:
In a cleaning process for an ion source chamber, an electrode positioned outside of the ion source chamber includes a suppression plug. When the cleaning gas is introduced into the source chamber, the suppression plug may engage an extraction aperture of the source chamber to adjust the gas pressure within the chamber to enhance chamber cleaning via. plasma-enhanced chemical reaction. The gas conductance between the source chamber aperture and the suppression plug can be adjusted during the cleaning process to provide optimum cleaning conditions and to exhaust unwanted deposits.
摘要:
An object of the present invention is to provide a focused ion beam apparatus that is capable of obtaining a much larger beam current and forming a focused ion beam with smaller aberration than a conventional focused ion beam apparatus no matter whether the level of acceleration is high or low. The focused ion beam apparatus according to the present invention includes a liquid metal ion source, an extraction electrode for extracting an ion beam from the liquid metal ion source, an acceleration (ground) electrode for accelerating an ion beam, and an electrostatic lens for converging an ion beam. When the acceleration voltage applied to the liquid metal ion source is lower than an emission threshold voltage of the liquid metal ion source, the voltage of the extraction electrode is at a lower potential than the voltage of the acceleration (ground) electrode. The polarity of a voltage applied to the electrostatic lens changes in accordance with the polarity of a voltage applied to the extraction electrode. The present invention makes it possible to exercise a deceleration mode focusing method at a high acceleration voltage from the dielectric strength voltage of an electrostatic lens and exercise an acceleration mode focusing method at a low acceleration voltage with an electrostatic lens having the same focal length as for the deceleration mode focusing method.
摘要:
There are provided a charged particle beam apparatus and a method of adjusting an axis of an aperture capable of adjusting a position of a center axis of the aperture easily and accurately in a short period of time.A charged particle beam apparatus 1 includes a charged particle source 9, an aperture 18, an object lens 12, observing means 32, an aperture driving portion 19, and a control portion 30. The control portion 30 includes spot pattern forming means 33 for forming a plurality of spot patterns on a surface N1 of a sample N by irradiating a charged particle beam I, analyzing means for calculating a position of a spot center of the spot pattern and a geometrical center position of a halo, and adjusting position determining means 35 for calculating an adjusting position based on a position of intersecting lines of connecting the positions of the spot centers of the respective spot patterns and the center position of the halo, in which a position of the aperture 18 is adjusted by moving the center axis of the aperture 18 to the adjusting position.
摘要:
A scanning electron microscope includes an electron gun to generate an electron beam, and an electron optical system directing the electron beam to a specimen. The electron optical system includes an objective lens that converges the electron beam to a surface of the specimen, an aberration corrector disposed between the electron gun and the objective lens so as to at least compensate for aberration caused by the objective lens, and a tilter which tilts electron beam to be incident into the aberration corrector. The aberration corrector further compensates for aberration caused by the tilter.
摘要:
Disclosed is a scanning electron microscope capable of checking an abrupt change of probe current due to changes in intensities of the respective condenser lenses when the probe current is intended to be changed by changing the intensities of the respective condenser lenses. The scanning electron microscope includes: an electron source for generating a beam of electrons; a first and second condenser lenses each for condensing the beam of electrons; an object lens for narrowly focusing the beam of electrons on a sample; a deflecting system for two-dimensionally scanning over the sample; and a detecting system for detecting secondary electrons generated from the sample due to the irradiation of the beam of electrons on the sample. In the scanning electron microscope, a first and second aperture plates each for blocking parts of the beam of electrons unnecessary for the sample are sequentially arranged between the first and second condenser lenses.
摘要:
In a charged particle beam applying apparatus such as an electron beams lithography system, there is a technology that facilitates positional adjustment of a crossover and improves throughput of the apparatus. A front focal plane of a condenser lens is provided with a sharp end face (crossover regulation edge) for regulating the height of the crossover on a beam axis. By using the crossover regulation edge to measure the shape of an electron beam, the shape of the beam on the front focal plane of the condenser lens can be always checked even if the height of the crossover formed by an electron gun or the resistance of a source forming lens is changed.
摘要:
A focused ion beam (FIB) system has an ion beam from an ion source, a condenser lens, a current-limiting aperture, an electrostatic angular aperture control lens, an electrostatic objective lens, and a controller which controls the angular aperture control lens with a polarity with which charged particles are decelerated and the objective lens with a polarity with which the charged particles are accelerated.
摘要:
An ion beam irradiating apparatus has: a beam profile monitor 14 which measures a beam current density distribution in y direction of an ion beam 4 in the vicinity of a target 8; movable shielding plate groups 18a, 18b respectively having plural movable shielding plates 16 which are arranged in the y direction so as to be opposed to each other across an ion beam path on an upstream side of the position of the target, the movable shielding plates being mutually independently movable in x direction; shielding-plate driving devices 22a, 22b which reciprocally drive the movable shielding plates 16 constituting the groups, in the x direction in a mutually independent manner; and a shielding-plate controlling device 24 which, on the basis of measurement information obtained by the monitor 14, controls the shielding-plate driving devices 22a, 22b to relatively increase an amount of blocking the ion beam 4 by the opposed movable shielding plates 16 which correspond to a position where a measured y-direction beam current density is relatively large, thereby uniformity of the beam current density distribution in the y direction.
摘要:
An electron-beam device having a beam generator for generating an electron beam, an objective lens for focusing the electron beam on an object, and at least one detector for detecting electrons scattered on the object or emitted by the object. Furthermore, a detector system for detecting electrons is described. With an electron-beam device having a detector system according to the present invention, it is possible to make a selection in a simple manner, in particular according to backscattered and secondary electrons. At the same time, as many electrons as possible may be detected using the detector system. For this purpose, the electron-beam device exhibits at least one adjustable diaphragm which is allocated to the detector. The detector system exhibits a detector on which a reflector for reflecting electrons onto the detector is accommodated.
摘要:
The present invention provides a charged particle beam column that does not cause displacement of an image or degradation of a resolution of images when a charged particle beam is tilted at a large angle. In the charged particle beam column including an aberration corrector, a deflector is used to control the direction of incidence of the charged particle beam on a second condenser lens but the object point of a condenser lens is not shifted. Consequently, the converging charged particle beam is tilted at a large angle with respect to the surface of a specimen without the necessity of shifting the object point of an objective lens lying on the optical axis of the charged particle beam column. At this time, the aberration corrector prevents a shift of an image or degradation of a resolution derived from the tilt of the charged particle beam.