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    Imaging apparatus capable of adding together signal charges from pixels and reading out the added pixel signals
    71.
    发明申请
    Imaging apparatus capable of adding together signal charges from pixels and reading out the added pixel signals 失效
    能够将来自像素的信号电荷相加并读出所添加的像素信号的成像装置

    公开(公告)号：US20010010554A1

    公开(公告)日：2001-08-02

    申请号：US09773713

    申请日：2001-01-31

    Applicant: Olympus Optical Co. Ltd.

    Inventor： Hideaki Yoshida

    IPC: H04N005/335 ,  H04N003/14

    CPC classification number: H04N9/045 ,  H04N5/343 ,  H04N5/3452 ,  H04N5/347 ,  H04N5/3728 ,  H04N5/3765

    Abstract: A color imaging apparatus includes a CCD imaging device having interline transfer charge transfer paths adapted for interlaced reading and a Bayer-arranged color filter. The apparatus can be put in either of normal shooting mode and high-sensitivity shooting mode. In the high-sensitivity mode, pixel signals from two pixels arranged in the vertical direction in each photosensitive CCD array are transferred by a corresponding vertical transfer path at two times the rate in the normal mode to a horizontal transfer path where they are added together. A line of pixel signals from the horizontal transfer path is output to a preprocess circuit where pixel signals separated by one pixel in the horizontal direction are added together. This process produces a line of image signal.

    Abstract translation: 彩色成像装置包括具有适于隔行读取的行间传送电荷传送路径和拜耳布置的滤色器的CCD成像装置。 该设备可以放在正常拍摄模式和高感光度拍摄模式中。 在高感光度模式中，在每个感光CCD阵列中沿垂直方向布置的两个像素的像素信号通过对应的垂直传送路径以正常模式的两倍的速率传送到水平传输路径，并将它们相加在一起。 来自水平传送路径的一行像素信号被输出到预处理电路，其中在水平方向上分开一个像素的像素信号相加在一起。 该过程产生一行图像信号。

    CCD image sensor having two-layered electrode structure
    72.
    发明授权
    CCD image sensor having two-layered electrode structure 失效
    具有两层电极结构的CCD图像传感器

    公开(公告)号：US6160580A

    公开(公告)日：2000-12-12

    申请号：US934366

    申请日：1997-09-19

    Applicant: Yasutaka Nakashiba

    Inventor： Yasutaka Nakashiba

    IPC: H04N5/335 ,  H04N5/341 ,  H04N5/369 ,  H04N5/372

    CPC classification number: H04N5/37213 ,  H04N5/3415 ,  H04N5/3452 ,  H04N5/3728 ,  H04N5/3765

    Abstract: A charge-coupled device image sensor comprises a matrix array of photodiodes and a horizontal charge-coupled device (CCD). First vertical CCDs are provided, each on one side of each column of the photodiodes for receiving charge packets from the photodiodes of odd-numbered rows and moving the charge packets to the horizontal CCD and second vertical CCDs are provided, each on the other side of each column of the photodiodes for receiving charge packets from the photodiodes of even-numbered rows and moving the charge packets to the horizontal CCD. The horizontal CCD receives the charge packets from the first and second vertical CCDs and transfers the received charge packets to external circuitry. According to a modified embodiment, a second horizontal CCD is provided for receiving the charge packets from the second vertical CCDs.

    Abstract translation: 电荷耦合器件图像传感器包括光电二极管的矩阵阵列和水平电荷耦合器件（CCD）。 提供第一垂直CCD，每个在每个光电二极管列的一侧上，用于接收来自奇数行的光电二极管的电荷分组，并将电荷分组移动到水平CCD，并且第二垂直CCD设置在另一侧 用于接收来自偶数行的光电二极管的电荷分组并将电荷分组移动到水平CCD的光电二极管的每列。 水平CCD接收来自第一和第二垂直CCD的电荷分组，并将接收到的电荷分组传送到外部电路。 根据修改实施例，提供第二水平CCD用于从第二垂直CCD接收电荷分组。

    Solid-state image pickup apparatus and image pickup apparatus
    73.
    发明授权
    Solid-state image pickup apparatus and image pickup apparatus 失效
    固态图像拾取装置和图像拾取装置

    公开(公告)号：US5955753A

    公开(公告)日：1999-09-21

    申请号：US934561

    申请日：1997-09-22

    Applicant: Hidekazu Takahashi

    Inventor： Hidekazu Takahashi

    IPC: H01L27/146 ,  H04N5/335 ,  H04N5/341 ,  H04N5/343 ,  H04N5/345 ,  H04N5/347 ,  H04N5/357 ,  H04N5/363 ,  H04N5/369 ,  H04N5/372 ,  H04N5/374 ,  H04N5/3745 ,  H04N5/378 ,  H04N9/04 ,  H01L31/062 ,  H01L31/113

    CPC classification number: H04N5/343 ,  H01L27/14609 ,  H01L27/14621 ,  H01L27/14645 ,  H04N3/1512 ,  H04N3/155 ,  H04N5/3452 ,  H04N5/347 ,  H04N5/37457 ,  H04N9/045

    Abstract: In order to realize a multi-function sensor in which a reduction of a CMOS sensor and an addition of pixel signals are performed in a pixel portion and, further, an addition and a non-addition can be arbitrarily performed, there is provided a solid state image pickup apparatus in which charges generated by a photoelectric converting device are perfectly transferred to a floating diffusion portion through a transfer switch and a change in electric potential of the floating diffusion portion is outputted to the outside by a source-follower amplifier. A few photoelectric converting devices are connected to one floating diffusion portion through the transfer switch. One set of a few source-follower amplifiers are formed for a few pixels. The photoelectric converting device is constructed by an MOS transistor gate and a depletion layer under the gate.

    Abstract translation: 为了实现在像素部分中执行CMOS传感器的减少和像素信号的添加的多功能传感器，并且还可以任意地执行添加和不添加，因此提供了一种固体 其中由光电转换装置产生的电荷通过转移开关完全转移到浮动扩散部分，并且浮动扩散部分的电位变化由源极跟随放大器输出到外部。 几个光电转换装置通过转印开关连接到一个浮动扩散部分。 一组源极跟随放大器形成几个像素。 光电转换装置由栅极下的MOS晶体管栅极和耗尽层构成。

    Solid state image sensing device with a feedback gate transistor at each photo-sensing section
    74.
    发明授权
    Solid state image sensing device with a feedback gate transistor at each photo-sensing section 失效
    在每个感光部分具有反馈栅极晶体管的固态图像感测装置

    公开(公告)号：US5274459A

    公开(公告)日：1993-12-28

    申请号：US865459

    申请日：1992-04-09

    Applicant: Masaharu Hamasaki

    Inventor： Masaharu Hamasaki

    IPC: H01L27/146 ,  H04N5/335 ,  H04N5/359 ,  H04N5/361 ,  H04N5/363 ,  H04N5/369 ,  H04N5/374 ,  H04N5/3745 ,  H04N5/378 ,  H04N3/14

    CPC classification number: H04N5/3575 ,  H04N5/3452 ,  H04N5/357

    Abstract: A solid state image sensing device is formed of a plurality of photo-sensing sections arranged in a two-dimensional fashion at a pixel unit in the horizontal and vertical directions. In this case, each of the plurality of photo-sensing sections is formed of a feedback gate transistor whose gate electrode and source electrode are both connected to a vertical signal line, a vertical selection transistor which is connected in series to the feedback gate transistor and whose gate electrode is connected to a horizontal selection line, and a photoelectric conversion element provided under a channel region of each of the feedback gate transistor and the vertical selection transistor, whereby the sensitivity of the solid state image sensing device is increased and the smear thereof can be lowered.

    Abstract translation: 固态图像感测装置由沿水平和垂直方向的像素单元以二维方式布置的多个感光部分形成。 在这种情况下，多个感光部分中的每一个由其栅电极和源电极均连接到垂直信号线的反馈栅晶体管，与反馈栅晶体管串联连接的垂直选择晶体管和 其栅电极连接到水平选择线，以及光电转换元件，设置在反馈栅极晶体管和垂直选择晶体管的沟道区下方，由此增加了固态图像感测装置的灵敏度，并且其拖尾 可以降低

    SOLID-STATE IMAGING APPARATUS AND ELECTRONIC DEVICE
    77.
    发明申请
    SOLID-STATE IMAGING APPARATUS AND ELECTRONIC DEVICE 审中-公开

    公开(公告)号：US20180213165A1

    公开(公告)日：2018-07-26

    申请号：US15866987

    申请日：2018-01-10

    Applicant: SEIKO EPSON CORPORATION

    Inventor： Shinichi SEKITA ,  Naoki NOMURA

    IPC: H04N5/345 ,  H04N5/378 ,  H01L27/146 ,  H04N5/372

    CPC classification number: H04N5/3452 ,  H01L27/14609 ,  H04N5/372 ,  H04N5/378

    Abstract: The present solid-state imaging apparatus includes: a light receiving element with a photoelectric conversion function; a readout circuit that reads out pixel information from the light receiving element, and outputs an output voltage; a CDS circuit that is composed of three-stage common source circuits, and generates a pixel signal based on a difference between an output voltage output from the readout circuit at the time of reset and an output voltage output based on the readout of the pixel information, the three-stage common source circuits being connected in series to one another and provided with direct-current cut elements that are each disposed on a corresponding one of input paths of the three-stage common source circuits; and a bias voltage supply circuit that supplies a direct-current bias voltage to gates of transistors of the three-stage common source circuits.

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