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公开(公告)号：US5744719A
公开(公告)日：1998-04-28
申请号：US619735
申请日：1996-06-12
申请人： Wolfgang Werner
发明人： Wolfgang Werner
CPC分类号： B81B3/0013 , B81C1/00928 , G01P15/0802 , B81C2201/117 , G01P2015/0814
摘要： The integrated micromechanical sensor device contains a body with a substrate (1) on which an insulating layer (2) and thereon a monocrystalline silicon layer (3), are arranged, in which the silicon layer has trenches as far as the surface of the insulating layer, and the side walls of the trenches as well as the side of the silicon layer adjacent to the insulating layer have a first doping type (n.sup.+) and the silicon layer has a second doping type (n.sup.-) at least in a partial region of its remaining surface, in which the silicon layer has a transistor arrangement in a first region (TB) and a sensor arrangement in a second region (SB), for which the insulating layer (2) is partly removed under the second region. Such a sensor device has considerable advantages over known devices with regard to its properties and its production process.
摘要翻译： PCT No.PCT / DE94 / 01092 Sec。 371日期：1996年6月12日 102（e）日期1996年6月12日PCT 1994年9月20日PCT公布。 公开号WO95 / 08775 1995年3月30日该集成微机械传感器装置包括具有衬底（1）的主体，其上布置有绝缘层（2）和其上的单晶硅层（3），其中硅层具有沟槽直到 绝缘层的表面和沟槽的侧壁以及与绝缘层相邻的硅层的侧面具有第一掺杂型（n +），并且硅层具有第二掺杂类型（n-）， 至少在其剩余表面的部分区域中，其中硅层在第一区域（TB）中具有晶体管布置，以及在第二区域（SB）中的传感器布置，绝缘层（2）在其下部分地被去除 第二个地区。 相对于已知装置，这种传感器装置具有相对于其性质及其制造方法的优点。
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公开(公告)号：US5736430A
公开(公告)日：1998-04-07
申请号：US480267
申请日：1995-06-07
CPC分类号： B81C1/00158 , G01L9/0042 , G01L9/0055 , G01P15/0802 , G01P15/123 , B81B2203/0315 , B81C2201/0115 , B81C2201/0178 , Y10S438/96
摘要： A method of forming apparatus including a force transducer on a silicon substrate having an upper surface, the silicon substrate including a dopant of one of the n-type or the p-type, the force transducer including a cavity having spaced side walls and a diaphragm supported in the cavity, the diaphragm extending between the side walls of the cavity, comprising the steps of: a. implant in the substrate a layer of a dopant of the one of the n-type or the p-type; b. deposit an epitaxial layer on the upper surface of the substrate, the epitaxial layer including a dopant of the other of the n-type or the p-type; c. implant spaced sinkers through the epitaxial layer and into electrical connection with the layer of a dopant of the one of the n-type or the p-type, each of the sinkers including a dopant of the one of the n-type or the p-type; d. anodize the substrate to form porous silicon of the sinkers and the layer; e. oxidize the porous silicon to form silicon dioxide; and f. etch the silicon dioxide to form the cavity and diaphragm.
摘要翻译： 一种形成装置的方法，包括在具有上表面的硅衬底上的力换能器，所述硅衬底包括n型或p型中的一种的掺杂剂，所述力传感器包括具有间隔开的侧壁的空腔和隔膜 支撑在空腔中，隔膜在空腔的侧壁之间延伸，包括以下步骤：a。 在衬底中注入n型或p型之一的掺杂剂层; b。 在衬底的上表面上沉积外延层，所述外延层包括n型或p型中另一种的掺杂剂; C。 通过外延层注入间隔的沉降片并与n型或p型之一的掺杂剂层电连接，每个沉降片包括n型或p型之一的掺杂剂， 类型; d。 阳极氧化基板以形成沉降片和层的多孔硅; e。 氧化多孔硅以形成二氧化硅; 和f。 蚀刻二氧化硅以形成空腔和隔膜。
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公开(公告)号：US5736061A
公开(公告)日：1998-04-07
申请号：US671536
申请日：1996-06-27
IPC分类号： H01L29/84 , G01L9/00 , G01L9/04 , H01L21/302 , H01L21/3065 , H01L21/308 , B44C1/22
CPC分类号： G01L9/0042
摘要： A semiconductor sensor mount is formed as follows: through holes are formed that penetrate a glass plate; and then the glass plate having the through holes is dipped into hydrofluoric acid etchant to smooth the inner peripheral surfaces of the respective through holes. By etching the inner peripheral surfaces of the respective through holes after the through hole formation, minute roughness and cracks formed on the inner peripheral surfaces are removed, and thereby the areas for adsorbing gas are substantially reduced. That is, vacuums within the through holes can be maintained at a high degree during the anodic bonding, whereby undesirable electric discharge phenomena are prevented even if a relatively high voltage is applied during the anodic bonding. Accordingly, the yield of products can be improved while improving productivity.
摘要翻译： 如下形成半导体传感器座：穿透玻璃板的通孔; 然后将具有通孔的玻璃板浸入氢氟酸蚀刻剂中以平滑相应通孔的内周表面。 通过在通孔形成后蚀刻各个通孔的内周面，去除在内周面上形成的微小的粗糙度和裂纹，从而大大减少了吸附气体的区域。 也就是说，在阳极接合期间，通孔内的真空度可以保持在很高程度，因此即使在阳极接合期间施加相对较高的电压，也防止了不期望的放电现象。 因此，可以提高产品的产率，同时提高生产率。
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74.发明授权
公开(公告)号：US5703393A
公开(公告)日：1997-12-30
申请号：US543439
申请日：1995-10-16
申请人： Yasuo Yamaguchi
发明人： Yasuo Yamaguchi
CPC分类号： G01L19/0084 , G01L19/147
摘要： A semiconductor pressure detecting in which a pressure sensing element (2) made of semiconductor having a diaphragm portion (9), a pedestal (8) for supporting the pressure sensing element (2) and wires (5) connected to the pressure sensing element (2) are molded by a molding resin (6) not so as to mold the diaphragm portion (9), characterized in that a silicon resin layer (4) is adhered on an outer surface of the diaphragm portion (9).
摘要翻译： 一种半导体压力检测装置，其中由具有隔膜部分（9）的半导体制成的压力感测元件（2），用于支撑压力感测元件（2）的基座（8）和连接到压力感测元件 2）由模制树脂（6）模制而成，以便模制隔膜部分（9），其特征在于，硅树脂层（4）粘附在隔膜部分（9）的外表面上。
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公开(公告)号：US5672826A
公开(公告)日：1997-09-30
申请号：US648747
申请日：1996-05-16
申请人： Hideo Suzuki , Ken Takahashi , Yukio Takahashi , Yoshimi Yamamoto , Kenichi Aoki , Tomoyuki Tobita
发明人： Hideo Suzuki , Ken Takahashi , Yukio Takahashi , Yoshimi Yamamoto , Kenichi Aoki , Tomoyuki Tobita
CPC分类号： G01L19/147 , G01L19/0038 , G01L19/0645 , G01L19/148 , G01L9/0054
摘要： The present invention provides a semiconductor pressure sensor having a glass base and a metal base bonded together satisfactorily so that a silicon diaphragm may not be affected by residual strain, and an intelligent differential pressure and pressure transmitting device employing the semiconductor pressure sensor. The semiconductor pressure sensor comprises a silicon diaphragm (1) provided with a strain-sensitive element, a glass or ceramic base (2) bonded to the silicon diaphragm (1), and a metal base (4) bonded to the glass or ceramic base (2) with a bonding glass (3). The thermal expansion coefficient of the metal base (4) at a temperature corresponding to the strain point of the bonding glass (3) is not greater than that of the glass or ceramic base (2).
摘要翻译： 本发明提供一种半导体压力传感器，其具有玻璃基座和金属基座，令人满意地结合在一起，使得硅膜片不会受到残余应变的影响，并且采用半导体压力传感器的智能差压和压力传递装置。 半导体压力传感器包括设置有应变敏感元件的硅隔膜（1），接合到硅隔膜（1）的玻璃或陶瓷基体（2），以及接合到玻璃或陶瓷基底的金属基底（4） （2）用粘合玻璃（3）。 在与玻璃（3）的应变点对应的温度下，金属基体（4）的热膨胀系数不大于玻璃或陶瓷基体（2）的热膨胀系数。
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公开(公告)号：US5670722A
公开(公告)日：1997-09-23
申请号：US727280
申请日：1996-10-09
CPC分类号： G01L19/143 , G01L19/0084 , G01L19/0645 , G01L19/147 , Y10T29/43
摘要： The present invention relates to a mounting assembly for a pressure sensor in a pressure transmitter. The mounting assembly includes a header having a cavity opening to a first surface. The cavity is defined by an inner endwall and an inner sidewall. A support is joined to the inner endwall within the cavity on a first support end. A pedestal has a first pedestal end supporting the pressure sensor and a second pedestal joined to the second support end. Aligning means align the second pedestal end to the second support end in order that a volume of the mounting assembly is increased to thereby reduce a quantity of fill fluid needed in the sensor cavity.
摘要翻译： 本发明涉及一种用于压力变送器中的压力传感器的安装组件。 安装组件包括具有通向第一表面的空腔的集管。 空腔由内端壁和内侧壁限定。 支撑件连接到第一支撑端上的腔内的内端壁。 基座具有支撑压力传感器的第一基座端和连接到第二支撑端的第二基座。 对准装置将第二基座端对准第二支撑端，以使得安装组件的体积增加，从而减少传感器腔中所需的填充流体的量。
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公开(公告)号：US5665253A
公开(公告)日：1997-09-09
申请号：US456211
申请日：1995-05-31
IPC分类号： G01L1/18 , G01C19/56 , G01L9/04 , G01P15/08 , G01P15/13 , G01Q10/00 , G01Q60/16 , G01Q70/16 , H01L29/84 , H01L21/027 , H01J37/244
CPC分类号： G01P15/131 , G01P15/0802 , G01P15/0894 , G01P2015/0828
摘要： A tunneling tip sensor and a method of photolithographically fabricating a unitary structure sensor on a semiconductor substrate are disclosed. A cantilever electrode is formed on the substrate with one end suspended above the substrate at a distance from a tunneling electrode so that a tunneling current flows through the cantilever and tunneling electrodes in response to an applied bias voltage. The cantilever and tunneling electrodes form a circuit that produces an output signal. A force applied to the sensor urges the cantilever electrode to deflect relative to the tunneling electrode to modulate the output signal. In the preferred embodiment, the output signal is a control voltage that is applied between the cantilever electrode and a control electrode to maintain a constant tunneling current. In an alternative embodiment, a lateral control electrode is fabricated to produce a lateral motion of the cantilever electrode such that the sensor detects a rotation. In another embodiment, x, y and z-axis sensors are fabricated on a substrate to provide a planar three-axis sensor.
摘要翻译： 公开了隧道尖端传感器和在半导体衬底上光刻地制造单一结构传感器的方法。 悬臂电极形成在衬底上，其一端悬在衬底上方距隧道电极一段距离处，使得隧道电流响应于所施加的偏置电压而流过悬臂和隧道电极。 悬臂和隧道电极形成产生输出信号的电路。 施加到传感器的力促使悬臂电极相对于隧道电极偏转，以调制输出信号。 在优选实施例中，输出信号是施加在悬臂电极和控制电极之间以保持恒定的隧穿电流的控制电压。 在替代实施例中，制造横向控制电极以产生悬臂电极的横向运动，使得传感器检测到旋转。 在另一个实施例中，x，y和z轴传感器制造在衬底上以提供平面三轴传感器。
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公开(公告)号：US5661244A
公开(公告)日：1997-08-26
申请号：US408294
申请日：1995-03-22
申请人： Etsuo Nishimura , Tateki Mitani
发明人： Etsuo Nishimura , Tateki Mitani
CPC分类号： G01L19/141 , G01L19/0038
摘要： In a pressure sensor, a metallic pressure introducing pipe is fit into the pressure receiving inlet formed in a metallic housing and fixed there by welding. The housing has a flange portion in its upper portion, and the flange portion is fixed to the outer wall of a tank which is an object to be measured so that the pressure sensor body is located inside the tank. A porous filter made of fluoroplastics is arranged adjacently to the atmospheric pressure introducing inlet. An adhesive tape which is removable is attached to the atmospheric pressure introducing inlet. The pressure sensor can realize stabilized maintenance and highly reliable airtightness for a sensor element, less limitation to sensor layout design in a small space and also can surely introduce air with no drop of water and dust into the sensor.
摘要翻译： 在压力传感器中，将金属压力导入管嵌入形成在金属壳体内的受压入口，并通过焊接固定在压力传感器上。 壳体在其上部具有凸缘部分，并且凸缘部分固定到作为待测量对象的罐的外壁，使得压力传感器主体位于罐内。 由氟塑料制成的多孔过滤器与大气压力引入入口相邻。 可拆卸的胶带连接到大气压引入口。 压力传感器可实现传感器元件的稳定维护和高度可靠的气密性，较小的空间限制了传感器布局设计，并且还可以确保在传感器中不引入水和灰尘的空气。
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公开(公告)号：US5648615A
公开(公告)日：1997-07-15
申请号：US316187
申请日：1994-09-30
申请人： Rainer Jeske , Kurt Weiblen , Dieter Arand
发明人： Rainer Jeske , Kurt Weiblen , Dieter Arand
CPC分类号： G01L19/003 , G01D11/245 , G01L19/141
摘要： A pressure sensor for connection to a circuit board includes a silicon chip arranged in a housing so that one surface of the silicon chip faces the circuit board, and pressure is applied on the silicon chip surface facing away from the circuit board. The pressure sensor configuration is easy to produce and allows simple installation of the pressure sensor on the circuit board.
摘要翻译： 用于连接到电路板的压力传感器包括布置在壳体中的硅芯片，使得硅芯片的一个表面面向电路板，并且在硅芯片表面上施加压力以背离电路板。 压力传感器配置易于生产，并允许压力传感器在电路板上的简单安装。
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80.发明授权
公开(公告)号：US5637801A
公开(公告)日：1997-06-10
申请号：US579672
申请日：1995-12-28
申请人： Motomi Ichihashi
发明人： Motomi Ichihashi
CPC分类号： G01L19/147 , Y10T29/53178
摘要： A semiconductor pressure sensor includes a pressure sensor chip including a diaphragm at the center thereof for measuring pressure and a die with an opening for introducing the pressure to the diaphragm. The pressure sensor chip is fixed to the die using an adhesive agent. Furthermore, prevention grooves are formed on the surface of the pressure sensor chip to prevent the adhesive agent from elevating onto the diaphragm.
摘要翻译： 半导体压力传感器包括压力传感器芯片，该压力传感器芯片包括用于测量压力的中心的隔膜和具有用于将压力引入隔膜的开口的模具。 使用粘合剂将压力传感器芯片固定到模具。 此外，在压力传感器芯片的表面上形成防止凹槽，以防止粘合剂升高到隔膜上。
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