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71.发明授权Cobalt-platinum group alloys whose anisotrophy is greater than their demagnetizable field for use as cylindrical memory elements 失效钴 - 铂族组合合金，其异相性比其可用的领域更大，用作圆柱形记忆元素
公开(公告)号：US3755796A
公开(公告)日：1973-08-28
申请号：US3755796D
申请日：1971-06-30
申请人： IBM
发明人： GRIEST A
CPC分类号： H01F10/16 , G11C19/0808 , H01F10/06
摘要： A magnetic cylindrical domain memory element and array comprising a ferro-magnetic, metallic, cobalt base, hexagonal, single crystal alloy having anisotropic characteristics, means for creating magnetic domains in the alloy and means for maintaining and manipulating the domains in the alloy. The alloy is composed of more then 50 percent cobalt and contains an addition element depressing the saturation magnetization field of the cobalt, but stabilizing the hexagonal phase of the cobalt to a higher temperature. This improvement is achieved without materially changing the magneto-crystalline anisotropy inherent in the hexagonal cobalt structure. The addition elements include ruthenium, rhenium, osmium, rhodium, iridium, silicon, germanium, arsenic, and platinum.
摘要翻译： 一种包括具有各向异性特征的铁磁性金属钴基，六方晶单晶合金的磁性圆柱形畴存储元件和阵列，用于在合金中产生磁畴的装置以及用于维持和操纵合金中的畴的装置。 该合金由多于50％的钴组成，并且含有降低钴的饱和磁化场的添加元素，但将钴的六方相稳定在较高的温度。 实现这一改进而不会明显改变六方钴结构固有的磁结晶各向异性。 添加元素包括钌，铼，锇，铑，铱，硅，锗，砷和铂。
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公开(公告)号：US3238061A
公开(公告)日：1966-03-01
申请号：US19761862
申请日：1962-05-25
申请人： IBM
发明人： HERMAN KORETZKY , BERNARD LELAND
CPC分类号： H01F41/24 , C23C18/50 , G11B5/858 , H01F10/16 , Y10S428/90
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公开(公告)号：US11894221B2
公开(公告)日：2024-02-06
申请号：US16960384
申请日：2019-05-23
发明人： Yasuyuki Iwabuchi , Manami Masuda , Takashi Kosho
CPC分类号： H01J37/3429 , C22C19/07 , C23C14/3414 , G11B5/656 , G11B5/658 , G11B5/851 , H01F10/16 , H01F41/183
摘要： Provided is a sputtering target, comprising: from 0.001 mol % to 0.5 mol % of Bi; from 45 mol % or less of Cr; 45 mol % or less of Pt; 60 mol % or less of Ru; and a total of 1 mol % to 35 mol % of at least one metal oxide, the balance being Co and inevitable impurities.
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公开(公告)号：US10944049B2
公开(公告)日：2021-03-09
申请号：US15810494
申请日：2017-11-13
发明人： Jesmin Haq , Tom Zhong , Zhongjian Teng , Vinh Lam , Yi Yang
摘要： A layered thin film device, such as a MTJ (Magnetic Tunnel Junction) device can be customized in shape by sequentially forming its successive layers over a symmetrically curved electrode. By initially shaping the electrode to have a concave or convex surface, the sequentially formed layers conform to that shape and acquire it and are subject to stresses that cause various crystal defects to migrate away from the axis of symmetry, leaving the region immediately surrounding the axis of symmetry relatively defect free. The resulting stack can then be patterned to leave only the region that is relatively defect free.
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公开(公告)号：US20200243242A1
公开(公告)日：2020-07-30
申请号：US16610118
申请日：2018-05-01
发明人： Naoya SHIBATA , Takao MATSUMOTO
摘要： A magnetic element is formed from a magnetic material, which is a material that is capable of generating a magnetic skyrmion, and a defect is introduced at a position corresponding to each side of an approximate triangle in plan view. A magnetic field having such a direction and an intensity as to generate at least one magnetic skyrmion in an area corresponding to inside of the approximate triangle is applied to the magnetic material with the defects introduced therein. This causes the magnetic skyrmion to be generated in the area corresponding to inside of the approximate triangle. This configuration enables the generated magnetic skyrmion to be stably kept at a higher temperature.
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公开(公告)号：US20200227358A1
公开(公告)日：2020-07-16
申请号：US16562652
申请日：2019-09-06
IPC分类号： H01L23/552 , H01F10/16 , H01F10/14 , H01F10/30
摘要： According to one embodiment, an electromagnetic wave attenuator includes a plurality of magnetic layers, and a plurality of nonmagnetic layers. The plurality of nonmagnetic layers is conductive. A direction from one of the plurality of magnetic layers toward an other one of the plurality of magnetic layers is aligned with a first direction. One of the plurality of nonmagnetic layers is between the one of the plurality of magnetic layers and the other one of the plurality of magnetic layers. A first thickness along the first direction of the one of the plurality of magnetic layers is not less than ½ times a second thickness along the first direction of the one of the plurality of nonmagnetic layers.
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公开(公告)号：US10706996B2
公开(公告)日：2020-07-07
申请号：US14647281
申请日：2013-11-11
申请人： TOHOKU UNIVERSITY
发明人： Shunsuke Fukami , Hideo Sato , Michihiko Yamanouchi , Shoji Ikeda , Hideo Ohno
摘要： A magnetic material includes a structure in which a first magnetic layer 1 and a second magnetic layer 2 are stacked such that each layer is formed at least partially in a stacking direction by substantially one atomic layer. The first magnetic layer contains Co as a principal component. The second magnetic layer includes at least Ni. The magnetic material has magnetic anisotropy in the stacking direction. Preferably, an atomic arrangement within a film surface of the first magnetic layer and the second magnetic layer has six-fold symmetry.
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公开(公告)号：US10672832B2
公开(公告)日：2020-06-02
申请号：US15875140
申请日：2018-01-19
发明人： Ji-Feng Ying , Baohua Niu
摘要： A magnetic detection circuit for a magnetic random access memory (MRAM) is provided. The magnetic detection circuit includes a sensing array including a plurality of sensing cells and a controller. Each of the sensing cells includes a first magnetic tunnel junction (MTJ) device. The controller is configured to access the first MRAM cells to detect the external magnetic field strength of the MRAM. The controller determines whether to stop the write operation of a plurality of memory cells of the MRAM according to the external magnetic field strength of the MRAM, and each of the memory cells includes a second MTJ device. The first MTJ device is smaller than the second MTJ device.
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公开(公告)号：US20200005985A1
公开(公告)日：2020-01-02
申请号：US16559231
申请日：2019-09-03
发明人： Shijun Yang , Heqian Yang , Yongfa Zhu , Wei Chen
IPC分类号： H01F27/245 , H01L49/02 , H01F10/16 , H01F41/32 , H02M3/158
摘要： A thin film inductor includes a first magnetic thin film and a second magnetic thin film that are adjacent, the first magnetic thin film is nested in the second magnetic thin film, and a relative magnetic permeability of the first magnetic thin film is less than a relative magnetic permeability of the second magnetic thin film, and a difference between the relative magnetic permeability of the first magnetic thin film and the relative magnetic permeability of the second magnetic thin film is greater than or equal to a first threshold, where when a magnetic induction intensity of the second magnetic thin film reaches a saturated magnetic induction intensity of the second magnetic thin film, a magnetic induction intensity of the first magnetic thin film is less than or equal to a saturated magnetic induction intensity of the first magnetic thin film.
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公开(公告)号：US20190172513A1
公开(公告)日：2019-06-06
申请号：US16323620
申请日：2017-07-19
申请人： SONY CORPORATION
发明人： EIJI KARIYADA
摘要： A magnetoresistive element 10 is formed by laminating a lower electrode 31, a first ground layer 21A including a non-magnetic material, a storage layer 22 having perpendicular magnetic anisotropy, an intermediate layer 23, a magnetization fixed layer 24, and an upper electrode 32. The storage layer 22 includes a magnetic material including at least a 3d transition metal element and a boron element in a composition. A second ground layer 21B is further included between the lower electrode 31 and the first ground layer 21A. The second ground layer 21B includes a material including at least one kind of element among elements constituting the storage layer in a composition.
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