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71.发明申请公开(公告)号：US20190386205A1
公开(公告)日：2019-12-19
申请号：US16012672
申请日：2018-06-19
申请人： Intel Corporation
发明人： Tanay Gosavi , Sasikanth Manipatruni , Kaan Oguz , Noriyuki Sato , Kevin O'Brien , Benjamin Buford , Christopher Wiegand , Angeline Smith , Tofizur Rahman , Ian Young
摘要： An apparatus is provided which comprises: a magnetic junction including: a first structure comprising a magnet with an unfixed perpendicular magnetic anisotropy (PMA) relative to an x-y plane of a device; a second structure comprising one of a dielectric or metal; a third structure comprising a magnet with fixed PMA, wherein the third structure has an anisotropy axis perpendicular to the plane of the device, and wherein the third structure is adjacent to the second structure such that the second structure is between the first and third structures; a fourth structure comprising an antiferromagnetic (AFM) material, the fourth structure adjacent to the third structure; a fifth structure comprising a magnet with PMA, the fifth structure adjacent to the fourth structure; and an interconnect adjacent to the first structure, the interconnect comprising spin orbit material.
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72.发明授权公开(公告)号：US10483457B1
公开(公告)日：2019-11-19
申请号：US16102941
申请日：2018-08-14
发明人： Hochul Lee , Chando Park , Seung Hyuk Kang
摘要： Aspects of the disclosure provide magnetoresistive random access memory (MRAM) and methods. The MRAM generally includes a first magnetic tunnel junction (MTJ) storage element comprising a first fixed layer, a first insulating layer, and a first free layer, and a second MTJ storage element comprising a second fixed layer, a second insulating layer, and a second free layer. The MRAM further includes a conductive layer connected to a source line, first bit line, and a second bit line, wherein the first MTJ storage element is disposed above and connected to the conductive layer and the first bit line at a first end and connected to the first bit line at a second end, and wherein the second MTJ storage element is disposed above and connected to the conductive layer and the second bit line at a first end and connected to the second bit line at a second end.
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公开(公告)号：US20190325932A1
公开(公告)日：2019-10-24
申请号：US16464260
申请日：2016-12-23
申请人： Intel Corporation
摘要： An apparatus is provided which comprises: a first paramagnet; a stack of layers, a portion of which is adjacent to the first paramagnet, wherein the stack of layers is to provide an inverse Rashba-Edelstein effect; a second paramagnet; a magnetoelectric layer adjacent to the second paramagnet; and a conductor coupled to at least a portion of the stack of layers and the magnetoelectric layer.
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74.发明申请公开(公告)号：US20190319183A1
公开(公告)日：2019-10-17
申请号：US16467157
申请日：2018-08-08
申请人： TDK CORPORATION
发明人： Tomoyuki SASAKI , Yohei SHIOKAWA
摘要： A spin-current magnetization rotational element includes a spin orbit torque wiring extending in a first direction and a first ferromagnetic layer disposed in a second direction intersecting the first direction of the spin orbit torque wiring, the spin orbit torque wiring having a first surface positioned on the side where the first ferromagnetic layer is disposed, and a second surface opposite to the first surface, and the spin orbit torque wiring has a second region on the first surface outside a first region in which the first ferromagnetic layer is disposed, the second region being recessed from the first region to the second surface side.
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公开(公告)号：US20190296227A1
公开(公告)日：2019-09-26
申请号：US16364128
申请日：2019-03-25
申请人： ABLIC Inc.
发明人： Takaaki HIOKA , Tomoki HIKICHI
摘要： The semiconductor device includes a vertical Hall element that is provided in a first region of a semiconductor substrate and has a plurality of first electrodes, and a resistive element that is provided in a second region different from the first region in the semiconductor substrate and has a plurality of second electrodes. The plurality of first electrodes and the plurality of second electrodes are connected so that resistances of current paths are substantially the same in any phase in which the vertical Hall element is driven using a spinning current method.
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公开(公告)号：US20190279699A1
公开(公告)日：2019-09-12
申请号：US16106694
申请日：2018-08-21
发明人： Yuichi Ohsawa , Mariko Shimizu , Satoshi Shirotori , Hideyuki Sugiyama , Altansargai Buyandalai , Hiroaki Yoda , Katsuhiko Koui , Tomoaki Inokuchi , Naoharu Shimomura
摘要： According to one embodiment, a magnetic memory device includes a conductive layer, a first magnetic layer, a second magnetic layer, and a first nonmagnetic layer. The conductive layer includes a first region, a second region, and a third region between the first region and the second region. The second magnetic layer is provided between the third region and the first magnetic layer in a first direction crossing a second direction. The second direction is from the first region toward the second region. The first nonmagnetic layer is provided between the first magnetic layer and the second magnetic layer. The third region includes first and second end portions. The first end portion includes a first protrusion. The second end portion includes a second protrusion. A first position along the second direction of the first protrusion is different from a second position along the second direction of the second protrusion.
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公开(公告)号：US20190277889A1
公开(公告)日：2019-09-12
申请号：US16426215
申请日：2019-05-30
发明人： Shaun D. Milano , Shixi Louis Liu
IPC分类号： G01R15/20 , G01R33/00 , G01R33/09 , G01R33/07 , H01L43/02 , H01L21/48 , H01L43/04 , H01L23/495 , H01L23/00 , G01R19/00 , H01L43/08 , H01L43/06
摘要： A current sensor integrated circuit includes a lead frame having a primary conductor and at least one secondary lead, a semiconductor die disposed adjacent to the primary conductor, an insulation structure disposed between the primary conductor and the semiconductor die, and a non-conductive insulative material enclosing the semiconductor die, the insulation structure, a first portion of the primary conductor, and a first portion of the at least one secondary lead to form a package. The first portion of the at least one secondary lead (between a first end proximal to the primary conductor and a second end proximal to the second, exposed portion of the at least one secondary lead) has a thickness that is less than a thickness of the second, exposed portion of the least one secondary lead. A distance between the second, exposed portion of the primary conductor and the second, exposed portion of the at least one secondary lead is at least 7.2 mm.
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公开(公告)号：US10360960B2
公开(公告)日：2019-07-23
申请号：US15700485
申请日：2017-09-11
发明人： Yushi Kato , Soichi Oikawa , Mizue Ishikawa , Yoshiaki Saito , Hiroaki Yoda
IPC分类号： G11C11/15 , G11C11/16 , H01L43/04 , H01L43/10 , H01L43/14 , G11C11/56 , H01L43/08 , G11C11/155 , H01L27/22
摘要： According to one embodiment, a magnetic memory device includes a conductive layer, a first magnetic layer, a second magnetic layer, a first nonmagnetic layer, and a controller. The conductive layer includes a first portion, a second portion, and a third portion between the first and second portions. The first magnetic layer is separated from the third portion. The second magnetic layer is provided between the third portion and the first magnetic layer. The first nonmagnetic layer is provided between the first and second magnetic layers. The controller is electrically connected to the first and second portions. The third portion includes a first region and a second region. The second region is provided between the first region and the second magnetic layer. The controller implements a first operation of supplying a first current to the conductive layer, and a second operation of supplying a second current to the conductive layer.
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公开(公告)号：US20190206603A1
公开(公告)日：2019-07-04
申请号：US16227850
申请日：2018-12-20
申请人： TDK CORPORATION
发明人： Tomoyuki SASAKI , Yohei SHIOKAWA
CPC分类号： H01F10/3286 , G11C11/161 , G11C11/18 , H01L43/04 , H01L43/14
摘要： The spin-orbit torque magnetization rotational element includes a spin-orbit torque wiring layer which extends in an X direction and a first ferromagnetic layer which is laminated on the spin-orbit torque wiring layer. The first ferromagnetic layer has shape anisotropy and has a major axis in the X direction. An easy axis of magnetization of the first ferromagnetic layer is inclined with respect to the X direction and a Y direction orthogonal to the X direction on a plane in which the spin-orbit torque wiring layer extends.
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公开(公告)号：US10333057B2
公开(公告)日：2019-06-25
申请号：US15928390
申请日：2018-03-22
发明人： Tomoya Shoji , Tsuyoshi Akagi
摘要： A hall element is provided to suppress fluctuation in a Hall output voltage of the hall element which is generated due to a fluctuation in stress. The hall element may be formed to include a substrate, a magnetosensitive portion formed on the substrate, an insulating film formed on the magnetosensitive portion, four conductive portions (electrode portions and contact portions) which are formed on the insulating film, electrically connected to the magnetosensitive portion through the insulating film, and disposed at positions serving as vertexes of a quadrangle, and ball portions electrically connected to the conductive portions, and at least one ball portion is disposed on a diagonal line of the quadrangle formed by a region surrounded by the four conductive portions and above a portion where the conductive portion and the insulating film are in contact with each other.
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